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61. 发明授权

US07428915B2 O-ringless tandem throttle valve for a plasma reactor chamber 失效
标题翻译：用于等离子体反应室的O型无环式串联节流阀
公开(公告)号：US07428915B2
公开(公告)日：2008-09-30
申请号：US11115956
申请日：2005-04-26
申请人： Andrew Nguyen , Hiroji Hanawa , Kenneth S. Collins , Kartik Ramaswamy , Amir Al-Bayati , Biagio Gallo
发明人： Andrew Nguyen , Hiroji Hanawa , Kenneth S. Collins , Kartik Ramaswamy , Amir Al-Bayati , Biagio Gallo
IPC分类号： F16K11/052
CPC分类号： F16K1/526 , F16K1/22 , H01J37/3244 , H01J37/32449 , Y10T137/87531
摘要： A valve system having high maximum gas flow rate and fine control of gas flow rate, includes a valve housing for blocking gas flow through a gas flow path, a large area opening through said housing having a first arcuate side wall and a small area opening through said housing having a second arcuate side wall, and respective large area and small area rotatable valve flaps in said large area and small area openings, respectively, and having arcuate edges congruent with said first and second arcuate side walls, respectively and defining therebetween respective first and second valve gaps. The first and second valve gaps are sufficiently small to block flow of a gas on one side of said valve housing up to a predetermined pressure limit, thereby obviating any need for O-rings.
摘要翻译：具有高的最大气体流量和气体流量的精细控制的阀门系统包括用于阻止气体流过气体流路的阀壳体，通过所述壳体的大面积开口具有第一弧形侧壁和小区域开口所述壳体分别具有第二弧形侧壁和分别在所述大面积和小面积开口中的相应的大面积和小面积的可旋转阀瓣，并且分别具有与所述第一和第二弧形侧壁一致的弓形边缘，并且在其间限定各自的第一和第二阀间隙。第一和第二阀间隙足够小以阻止气体在所述阀壳体的一侧上的流动直到预定的压力极限，从而避免了对O形环的任何需要。

62. 发明授权

US07422775B2 Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing 有权
标题翻译：光吸收层的低温等离子体沉积和高速光学退火的方法
公开(公告)号：US07422775B2
公开(公告)日：2008-09-09
申请号：US11131899
申请日：2005-05-17
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H05H1/24
CPC分类号： H05H1/46
摘要： A method of processing a workpiece includes introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and exposing the workpiece to optical radiation that is at least partially absorbed in the optical absorber layer.
摘要翻译：一种处理工件的方法包括将光吸收材料前体气体引入到包含工件的室中，在折入路径中产生RF振荡环形等离子体电流，其包括通过施加RF源功率覆盖工件的工艺区域，以便沉积在工件上的光吸收材料层，以及将工件暴露于至少部分地吸收在光吸收层中的光辐射。

63. 发明授权

US07323401B2 Semiconductor substrate process using a low temperature deposited carbon-containing hard mask 有权
标题翻译：半导体衬底工艺使用低温沉积含碳硬掩模
公开(公告)号：US07323401B2
公开(公告)日：2008-01-29
申请号：US11199593
申请日：2005-08-08
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/22 , H01L21/38
CPC分类号： H01L21/0276 , C23C16/26 , C23C16/507 , H01J37/321 , H01L21/0332 , H01L21/0337 , H01L21/268 , H01L21/3081 , H01L21/3086 , H01L21/31144 , H01L21/32139 , Y10S430/151
摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.
摘要翻译：使用光学可写掩模在半导体衬底上处理薄膜结构的方法包括将衬底放置在反应室中，所述衬底在其表面上根据预定图案在其表面上具有待蚀刻的靶层，并且沉积碳 - （a）将含碳工艺气体引入所述腔室中，（b）在折入路径中产生可重入环形的RF等离子体电流，所述凹入的RF等离子体电流包括通过耦合等离子体RF源功率的工件区域到（c）将RF等离子体偏置功率或偏置电压耦合到工件的外部部分。该方法还包括光刻地限定含碳硬掩模层中的预定图案，并且在存在硬掩模层的情况下蚀刻目标层。

64. 发明授权

US07303982B2 Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage 有权
标题翻译：使用具有低解离和低最小等离子体电压的电感耦合等离子体源的等离子体浸没离子注入工艺
公开(公告)号：US07303982B2
公开(公告)日：2007-12-04
申请号：US10646467
申请日：2003-08-22
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
IPC分类号： H01L21/42 , H01L21/425
CPC分类号： H01J37/321 , H01J37/32082
摘要： A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas which includes the species to be implanted in the surface layer of the workpiece. The method further includes generating from the process gas a plasma by inductively coupling RF source power into the processing zone from an RF source power generator through an inductively coupled RF power applicator, and applying an RF bias from an RF bias generator to the workpiece support.
摘要翻译：用于将离子注入工件的表面层的方法包括将工件放置在腔室中的工件支撑件上，其中表面层与腔室的天花板处于面对关系，从而在工件和天花板之间限定处理区域，以及将包括要植入工件的表面层中的物质的工艺气体引入该室中。该方法还包括通过将RF源功率从RF源功率发生器通过感应耦合RF功率施加器感应耦合到处理区域中，并且将来自RF偏置发生器的RF偏压施加到工件支架，从而从处理气体产生等离子体。

65. 发明授权

US06893907B2 Fabrication of silicon-on-insulator structure using plasma immersion ion implantation 失效
标题翻译：使用等离子体浸没离子注入制造绝缘体上硅结构
公开(公告)号：US06893907B2
公开(公告)日：2005-05-17
申请号：US10786410
申请日：2004-02-24
申请人： Dan Maydan , Randir P. S. Thakur , Kenneth S. Collins , Amir Al-Bayati , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
发明人： Dan Maydan , Randir P. S. Thakur , Kenneth S. Collins , Amir Al-Bayati , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01J37/321 , H01J2237/0825 , Y10S438/977
摘要： A method of fabricating a silicon-on-insulator structure having a silicon surface layer in a semiconductor workpiece, is carried out by maintaining the workpiece at an elevated temperature and producing an oxygen-containing plasma in the chamber while applying a bias to the workpiece and setting the bias to a level corresponding to an implant depth in the workpiece below the silicon surface layer to which oxygen atoms are to be implanted, whereby to form an oxygen-implanted layer in the workpiece having an oxygen concentration distribution generally centered at the implant depth and having a finite oxygen concentration in the silicon surface layer. The oxygen concentration in the silicon surface layer is then reduced to permit epitaxial silicon deposition.
摘要翻译：在半导体工件中制造具有硅表面层的绝缘体上硅结构的方法通过将工件保持在升高的温度下并在室中产生含氧等离子体，同时向工件施加偏压，将所述偏压设置为与待注入氧原子的硅表面层下方的所述工件中的植入深度相对应的水平，由此在所述工件中形成氧注入层，所述氧注入层通常以注入深度为中心并且在硅表面层中具有有限的氧浓度。然后减小硅表面层中的氧浓度以允许外延硅沉积。

66. 发明授权

US06494986B1 Externally excited multiple torroidal plasma source 失效
标题翻译：外激发多环形等离子体源
公开(公告)号：US06494986B1
公开(公告)日：2002-12-17
申请号：US09636435
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： H05H100
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second pairs of openings therethrough near generally opposite sides of the workpiece support. At least first and second hollow conduits are connected to respective pairs of the openings to provide at least first and second closed torroidal paths through the respective conduits and extending between respective pairs of the openings across the wafer surface. A process gas supply is coupled to the interior of the chamber for supplying process gas to the torroidal paths. Coil antennas are coupled to RF power sources and inductively coupled to the interior of the hollow conduits and capable of maintaining a plasma in the torroidal paths.
摘要翻译：一种用于处理工件的等离子体反应器，包括限定真空室的外壳，位于所述外壳内的面向所述外壳的上部的工件支撑件，所述外壳具有穿过所述工件支撑件的大体相对侧的至少第一和第二对开口。至少第一和第二空心管道连接到相应的一对开口，以提供至少第一和第二封闭的环形路径穿过相应的导管并且在相应的成对开口之间跨越晶片表面延伸。工艺气体供应件连接到室的内部，用于将工艺气体供应到环形路径。线圈天线耦合到RF功率源，并且感应耦合到中空导管的内部并且能够将等离子体保持在环形路径中。

67. 发明授权

US06468388B1 Reactor chamber for an externally excited torroidal plasma source with a gas distribution plate 失效
标题翻译：用于外部激发的具有气体分配板的环形等离子体源的反应室
公开(公告)号：US06468388B1
公开(公告)日：2002-10-22
申请号：US09636434
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： H01L2100
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma chamber defining an evacuated interior environment for processing a substrate includes a substrate support, an apertured gas distribution plate in spaced facing relationship to the substrate support, and adapted to flow process gases into the chamber interior environment adjacent the substrate support, the gas distribution plate and substrate support defining a substrate processing region therebetween. A hollow conduit having respective ends opening into the substrate processing region on opposite sides of the gas distribution plate, with the interior of the conduit sharing the interior environment. The conduit being adapted to accept irradiation by an RF field of processing gases within the conduit to sustain a plasma in a path extending around the conduit interior and across the substrate processing region within the chamber interior environment.
摘要翻译：限定用于处理衬底的抽空的内部环境的等离子体室包括衬底支撑件，与衬底支撑件间隔开的面对关系的多孔气体分配板，并且适于将工艺气体流入邻近衬底支撑件的腔室内部环境中，气体分布板和衬底支撑件限定其间的衬底处理区域。中空导管，其各自的端部通向气体分配板的相对侧的基板处理区域，导管的内部共享内部环境。所述管道适于接受RF管道内的处理气体的RF场辐射，以在围绕管道内部延伸并且在腔室内部环境内的衬底处理区域周围延伸的路径中维持等离子体。

68. 发明申请

US20120086464A1 IN-SITU VHF VOLTAGE/CURRENT SENSORS FOR A PLASMA REACTOR 有权
标题翻译：用于等离子体反应器的现场甚高频电压/电流传感器
公开(公告)号：US20120086464A1
公开(公告)日：2012-04-12
申请号：US13052280
申请日：2011-03-21
申请人： Hiroji Hanawa , Satoru Kobayashi , Kartik Ramaswamy , Shahid Rauf
发明人： Hiroji Hanawa , Satoru Kobayashi , Kartik Ramaswamy , Shahid Rauf
IPC分类号： G01R27/04
CPC分类号： G01R27/32 , G01R19/0061 , H05H1/0081
摘要： An RE voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement. An RF current probe is encapsulated in a conductive housing to permit its placement inside a plasma reactor chamber.
摘要翻译： RE电压探头适于具有长同轴电缆，以允许测量装置远离探头连接，而不会使电压测量失真。 RF电流探针被封装在导电壳体中以允许其放置在等离子体反应器室内。

69. 发明授权

US08513939B2 In-situ VHF voltage sensor for a plasma reactor 有权
标题翻译：用于等离子体反应器的原位VHF电压传感器
公开(公告)号：US08513939B2
公开(公告)日：2013-08-20
申请号：US13052280
申请日：2011-03-21
申请人： Hiroji Hanawa , Satoru Kobayashi , Kartik Ramaswamy , Shahid Rauf
发明人： Hiroji Hanawa , Satoru Kobayashi , Kartik Ramaswamy , Shahid Rauf
IPC分类号： G01R31/02 , G01R27/08
CPC分类号： G01R27/32 , G01R19/0061 , H05H1/0081
摘要： An RF voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement.
摘要翻译： RF电压探头适于具有长同轴电缆，以允许测量设备远离探头连接，而不会使电压测量失真。

70. 发明申请

US20110009999A1 PLASMA REACTOR WITH RF GENERATOR AND AUTOMATIC IMPEDANCE MATCH WITH MINIMUM REFLECTED POWER-SEEKING CONTROL 审中-公开
标题翻译：具有RF发生器的等离子体反应器和具有最小反射功率控制的自动阻抗匹配
公开(公告)号：US20110009999A1
公开(公告)日：2011-01-13
申请号：US12502037
申请日：2009-07-13
申请人： Chunlei Zhang , Lawrence Wong , Kartik Ramaswamy , James P. Cruse , Hiroji Hanawa
发明人： Chunlei Zhang , Lawrence Wong , Kartik Ramaswamy , James P. Cruse , Hiroji Hanawa
IPC分类号： H01L21/306 , B05C11/00 , G06F19/00
CPC分类号： H01J37/32183 , H01J37/32091
摘要： An impedance match at an RF generator output of a plasma reactor includes plural minimum-seeking loop controllers having respective feedback input ports coupled to receive a reflected RF power signal from a reflected power sensing circuit and respective control output ports. The output ports are coupled to variable reactances of an impedance match circuit that is connected between the RF generator and an RF power applicator of the reactor.
摘要翻译：在等离子体电抗器的RF发生器输出端处的阻抗匹配包括多个最小寻求环路控制器，其具有耦合以从反射功率感测电路和相应控制输出端口接收反射的RF功率信号的各个反馈输入端口。输出端口耦合到连接在RF发生器和反应器的RF功率施加器之间的阻抗匹配电路的可变电抗。

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