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    • 62. 发明授权
    • Apparatus for recording and reproducing digital information signals of different transmission rates
    • 用于记录和再现不同传输速率的数字信息信号的装置
    • US06441979B1
    • 2002-08-27
    • US08405288
    • 1995-03-16
    • Nobutaka AmadaTakaharu NoguchiTakao Arai
    • Nobutaka AmadaTakaharu NoguchiTakao Arai
    • G11B509
    • G11B20/00007G11B15/125G11B15/1875G11B15/4673G11B20/10527G11B20/1866G11B27/3027G11B2020/10592G11B2220/90H04N5/78263H04N5/9201H04N5/9261H04N5/93
    • In a digital information recording and reproducing apparatus of a rotary magnetic head type for selecting and recording a plurality of digital information signals having different transmission rates and for selectively reproducing the recorded signal, a high-rate digital information signal and a low-rate digital information signal are inputted for selection of either one thereof to be converted by a recording-system encoder into two channels of recording signals. When recording the high-rate signal, the rotary drum is turned at a rotation speed and the magnetic tape is fed at a feed speed (V1) to conduct 4-track azimuth recording of the signals for each rotation of the rotary drum by the first to fourth magnetic heads. To record the low-rate signal, the rotary drum is turned at a rotation speed substantially equal to the first rotation speed and the magnetic tape is fed at a feed speed almost equal to (V1/N) so as to achieve 4-track azimuth recording of record signals compressed on a time axis to 1/N of the original signals for every N rotations of the rotary drum by the magnetic heads. A reproducing system receives two channels of signals reproduced by the first to fourth magnetic heads and conducts for the signals such processes reverse to those of the encoding process of the recording system.
    • 在用于选择和记录具有不同传输速率的多个数字信息信号并用于选择性地再现记录信号的旋转磁头类型的数字信息记录和再现装置中,高速数字信息信号和低速数字信息 输入信号以选择要由记录系统编码器转换成两个通道的记录信号。 当记录高速率信号时,旋转磁鼓以转速转动,磁带以进给速度(V1)进给,以便通过第一个旋转磁鼓对旋转磁鼓的每次旋转的信号进行四磁道方位记录 到第四磁头。 为了记录低速率信号,旋转磁鼓以基本上等于第一转速的转速转动,并且磁带以几乎等于(V1 / N)的馈送速度馈送,以便实现4磁道方位角 通过磁头对旋转磁鼓的每N次旋转记录在时间轴上压缩的记录信号为原始信号的1 / N。 再现系统接收由第一至第四磁头再现的两个信道信道,并对与记录系统的编码处理相反的处理进行传送。
    • 65. 发明授权
    • Semiconductor device including a protective element having negative
resistance characteristic
    • 包括具有负电阻特性的保护元件的半导体器件
    • US5821586A
    • 1998-10-13
    • US543047
    • 1995-10-13
    • Kazumi YamaguchiTakao Arai
    • Kazumi YamaguchiTakao Arai
    • H01L29/78H01L27/02H01L23/62
    • H01L27/0251H01L2924/0002
    • A semiconductor device has a vertical MOS FET and a trigger element connected between the drain and the gate of the MOS FET. The trigger element has a heavily doped n region, a lightly doped p region and a lightly doped n region. The trigger element has a breakdown voltage lower than the drain-to-source rated voltage of the MOS FET and exhibits a negative resistance characteristic. A surge voltage enterring the drain of the MOS FET raises the gate potential of the MOS FET by flowing through the trigger element to thereby trigger the source-drain path of the MOS FET. The negative resistance characteristic of the trigger element enables to lower the temperature rise of the MOS FET to thereby protect the MOS FET against thermal destruction. A bidirectional diode set may be connected in series to the trigger element to design various breakdown voltage of the protective path.
    • 半导体器件具有垂直MOS FET和连接在MOS FET的漏极和栅极之间的触发元件。 触发元件具有重掺杂的n区,轻掺杂的p区和轻掺杂的n区。 触发元件具有低于MOS FET的漏极 - 源极额定电压的击穿电压,并具有负电阻特性。 进入MOS FET的漏极的浪涌电压通过流过触发元件而提高MOS FET的栅极电位,从而触发MOS FET的源极 - 漏极路径。 触发元件的负电阻特性能够降低MOS FET的温度上升,从而保护MOS FET免受热破坏。 双向二极管组可以与触发元件串联连接,以设计保护路径的各种击穿电压。
    • 67. 发明授权
    • Low-noise zener diode
    • 低噪声齐纳二极管
    • US5612568A
    • 1997-03-18
    • US560190
    • 1995-11-21
    • Takao Arai
    • Takao Arai
    • H01L29/866H01L29/861
    • H01L29/866
    • A low-noise Zener diode that enables to improve the surge resistance performance without degeneration of its low-noise characteristic is provided. The diode contains a semiconductor substrate of a first conductivity type and a first impurity doped region of a second conductivity type formed in a surface area of the substrate. The first impurity doped region has spaces into which no impurity of the second conductivity type is doped. The diode further contains a second impurity doped region of the second conductivity type formed in the first impurity doped region. The second impurity doped region has a depth less than that of the first impurity doped region. The second impurity doped region is contacted with the substrate in the spaces, producing main p-n junctions of the diode at respective interfaces of the second impurity doped regions and the substrate. The second impurity doped region is contacted with the first impurity doped region other than in the spaces. Heat generation zones of the main p-n junctions are combined with each other to produce a total heat generation zone that is greater than a sum area of the main p-n junctions.
    • 提供了一种低噪声齐纳二极管,可以提高浪涌电阻性能,而不会降低其低噪声特性。 二极管包含形成在衬底的表面区域中的第一导电类型的半导体衬底和第二导电类型的第一杂质掺杂区域。 第一杂质掺杂区域具有不掺杂第二导电类型的杂质的空间。 二极管还包含在第一杂质掺杂区域中形成的第二导电类型的第二杂质掺杂区域。 第二杂质掺杂区域的深度小于第一杂质掺杂区域的深度。 第二杂质掺杂区域与空间中的衬底接触,在第二杂质掺杂区域和衬底的相应界面产生二极管的主p-n结。 第二杂质掺杂区域与除了空间中的第一杂质掺杂区域接触。 主p-n结的热产生区彼此组合以产生大于主p-n结的总面积的总发热区。
    • 68. 发明授权
    • Semiconductor device with parallel-connected diodes
    • 具有并联二极管的半导体器件
    • US5548152A
    • 1996-08-20
    • US260832
    • 1994-06-16
    • Takao Arai
    • Takao Arai
    • H01L27/04H01L21/822H01L27/02H01L27/06H01L29/861H01L29/866H01L23/62H01L29/76H01L31/107
    • H01L27/0251H01L27/0255
    • A semiconductor device for electrostatic-charge protection is provided. The device includes first and second diodes parallel-connected and an MOS transistor connected serially to the second diode, all of which are provided on a semiconductor substrate. The breakdown voltages of the first and second diodes are higher than the threshold voltage of the MOS transistor. When a voltage lower than the threshold voltage is applied across a pair of electrodes of the device, the MOS transistor is open, so that only the first diode is effective, providing small capacitance between the pair of the electrodes. When a voltage equal to or higher than the threshold voltage is applied across the pair of the electrodes, the MOS transistor becomes short, so that both of the first and second diodes becomes effective. Therefore, when a voltage higher than the breakdown voltages is applied, both of the diodes absorb applied electrostatic energy, which means that the withstand voltage between the pair of the electrodes can be higher than those of the conventional ones.
    • 提供了一种用于静电电荷保护的半导体器件。 该器件包括并联的第一和第二二极管和串联连接到第二二极管的MOS晶体管,所有这些都设置在半导体衬底上。 第一和第二二极管的击穿电压高于MOS晶体管的阈值电压。 当低于阈值电压的电压施加在器件的一对电极上时,MOS晶体管断开,使得仅第一二极管有效,在一对电极之间提供小的电容。 当在一对电极之间施加等于或高于阈值电压的电压时,MOS晶体管变短,使得第一和第二二极管都有效。 因此,当施加高于击穿电压的电压时,两个二极管吸收所施加的静电能量,这意味着一对电极之间的耐电压可以高于常规电极。