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61. 发明申请

US20110057188A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110057188A1
公开(公告)日：2011-03-10
申请号：US12872823
申请日：2010-08-31
申请人： Shunpei Yamazaki , Junichiro Sakata , Kosei Noda , Masayuki Sakakura , Yoshiaki Oikawa , Hotaka Maruyama
发明人： Shunpei Yamazaki , Junichiro Sakata , Kosei Noda , Masayuki Sakakura , Yoshiaki Oikawa , Hotaka Maruyama
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/78606 , H01L23/5329 , H01L27/1225 , H01L29/24 , H01L29/66742 , H01L29/66969 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.
摘要翻译：本发明的目的是制造具有电特性稳定的薄膜晶体管的高可靠性的半导体器件。覆盖薄膜晶体管的氧化物半导体层的绝缘层含有硼元素或铝元素。通过使用含有硼元素或铝元素的硅靶或氧化硅靶的溅射法形成含有硼元素或铝元素的绝缘层。或者，代替硼元素的含有锑（Sb）元素或磷（P）元素的绝缘层覆盖薄膜晶体管的氧化物半导体层。

62. 发明申请

US20100193783A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100193783A1
公开(公告)日：2010-08-05
申请号：US12692794
申请日：2010-01-25
申请人： Shunpei Yamazaki , Junichiro Sakata , Hideyuki Kishida
发明人： Shunpei Yamazaki , Junichiro Sakata , Hideyuki Kishida
IPC分类号： H01L29/786 , H01L21/336 , H01L29/12
CPC分类号： H01L29/7869 , G02F1/1362 , G02F2202/10 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225
摘要： In forming a thin film transistor, an oxide semiconductor layer is used and a cluster containing a titanium compound whose electrical conductance is higher than that of the oxide semiconductor layer is formed between the oxide semiconductor layer and a gate insulating layer.
摘要翻译：在形成薄膜晶体管时，使用氧化物半导体层，并且在氧化物半导体层和栅极绝缘层之间形成含有电导率高于氧化物半导体层的导电性的钛化合物的簇。

63. 发明授权

US07745989B2 Light emitting element, light emitting device, and electronic apparatus 有权
标题翻译：发光元件，发光元件及电子设备
公开(公告)号：US07745989B2
公开(公告)日：2010-06-29
申请号：US11473332
申请日：2006-06-23
申请人： Shunpei Yamazaki , Junichiro Sakata , Ryoji Nomura
发明人： Shunpei Yamazaki , Junichiro Sakata , Ryoji Nomura
IPC分类号： H01L51/54 , H01J1/62 , H01J63/04
CPC分类号： H01L51/52 , H01L51/5048 , Y10S428/917
摘要： It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a first composite layer, a second composite layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a second electrode, which are stacked over the first electrode, are included. The first composite layer and the second composite layer each include metal oxide and an organic compound. A concentration of metal oxide in the first composite layer is higher than a concentration of metal oxide in the second composite layer, whereby a light emitting element with a low driving voltage can be obtained. Further, the composite layer is not limited to a two-layer structure. A multi-layer structure can be employed. However, a concentration of metal oxide in the composite layer is gradually higher from the light emitting layer to first electrode side.
摘要翻译：本发明的目的是提供一种具有低驱动电压的发光元件。在发光元件中，第一电极; 并且包括层叠在第一电极上的第一复合层，第二复合层，发光层，电子传输层，电子注入层和第二电极。第一复合层和第二复合层各自包括金属氧化物和有机化合物。第一复合层中的金属氧化物的浓度高于第二复合层中的金属氧化物的浓度，由此可以获得具有低驱动电压的发光元件。此外，复合层不限于两层结构。可以采用多层结构。然而，复合层中的金属氧化物的浓度从发光层逐渐变高到第一电极侧。

64. 发明授权

US07532173B2 Display device and folding portable terminal 有权
标题翻译：显示设备和折叠便携式终端
公开(公告)号：US07532173B2
公开(公告)日：2009-05-12
申请号：US10788255
申请日：2004-02-27
申请人： Shunpei Yamazaki , Yasuyuki Arai , Yasuko Watanabe , Aya Anzai , Hiromichi Godo , Junichiro Sakata , Kaoru Tsuchiya
发明人： Shunpei Yamazaki , Yasuyuki Arai , Yasuko Watanabe , Aya Anzai , Hiromichi Godo , Junichiro Sakata , Kaoru Tsuchiya
IPC分类号： G09G5/00
CPC分类号： H01L27/3267 , G06F1/1616 , G06F1/1637 , G06F1/1647 , G06F1/1677 , G06F1/1686 , G06F3/1423 , G06F2200/1614 , G09G2300/023 , G09G2340/0492 , H01L27/3209 , H01L27/3234 , H01L51/5262 , H01L51/5281 , H01L2251/5323 , H01L2251/558 , H04M1/0214 , H04M1/0245 , H04M1/72519 , H04M2250/16
摘要： It is an object to provide a highly functioned and highly value-added display device and mobile terminal. It is another object to provide a display device and mobile terminal characterized by including a plurality of pixels arranged in a matrix form and a first display screen over one surface of a substrate having a translucency, a second display screen over the opposite surface of the one surface of the substrate, each of the plurality of pixels having a light emitting element for emitting light toward the first display screen and the second display screen, and a first polarizer over one surface of the substrate and a second polarizer over the opposite surface of the one surface of the substrate.
摘要翻译：本发明的目的是提供一种高功能且高附加值的显示设备和移动终端。另一个目的是提供一种显示装置和移动终端，其特征在于包括以矩阵形式布置的多个像素，以及在具有半透明度的基板的一个表面上的第一显示屏幕，在一个相对表面上的第二显示屏幕所述多个像素中的每一个具有用于朝向所述第一显示屏和所述第二显示屏发射光的发光元件，以及在所述基板的一个表面上的第一偏振器和位于所述第二显示屏的相对表面上的第二偏振器衬底的一个表面。

65. 发明申请

US20070200112A1 Light-emitting device 失效
标题翻译：发光装置
公开(公告)号：US20070200112A1
公开(公告)日：2007-08-30
申请号：US11707414
申请日：2007-02-16
申请人： Shunpei Yamazaki , Junichiro Sakata , Takahiro Kawakami , Yoshiaki Yamamoto , Miki Katayama , Kohei Yokoyama , Yasuyuki Arai
发明人： Shunpei Yamazaki , Junichiro Sakata , Takahiro Kawakami , Yoshiaki Yamamoto , Miki Katayama , Kohei Yokoyama , Yasuyuki Arai
IPC分类号： H01L29/04
CPC分类号： H01L51/5278 , H01L27/3244 , H01L27/3281 , H01L51/5012 , H01L2251/5323
摘要： It is an object of the present invention to provide a light-emitting device with high current efficiency and high display quality, in which a change in luminance with time is suppressed. The light-emitting device is provided with a plurality of light-emitting elements in each of which a plurality of light-emitting units each including at least one light-emitting layer are connected in series between a pair of electrodes. Between one of light-emitting units and the other light-emitting unit, an intermediate conductive layer is provided in the light-emitting unit. The light-emitting layer includes base material which is a compound containing an element belonging to group 2 and an element belonging to group 16 or a compound containing an element belonging to group 12 and an element belonging to group 16, and an impurity element which is an emission center. This structure makes it possible to increase light emission luminance without increasing current density.
摘要翻译：本发明的目的是提供一种具有高电流效率和高显示质量的发光器件，其中抑制亮度随时间的变化。发光装置设置有多个发光元件，其中每个包括至少一个发光层的多个发光单元串联连接在一对电极之间。在一个发光单元和另一个发光单元之间，在发光单元中设置中间导电层。发光层包括作为含有属于组2的元素和属于第16族的元素的化合物或含有属于第12族的元素和属于第16族的元素的化合物的基质材料，以及杂质元素是排放中心。这种结构使得可以在不增加电流密度的情况下增加发光亮度。

66. 发明授权

US07211461B2 Manufacturing apparatus 有权
标题翻译：制造设备
公开(公告)号：US07211461B2
公开(公告)日：2007-05-01
申请号：US10774432
申请日：2004-02-10
申请人： Junichiro Sakata , Shunpei Yamazaki
发明人： Junichiro Sakata , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L51/56 , C23C14/12 , C23C14/246 , C23C14/56
摘要： The purpose of the invention is increasing the efficiency of utilizing an EL material and providing a deposition method and a vapor deposition apparatus which is one of the film formation systems which are excellent in throughput and uniformity in film thickness in forming an EL layer. According to the invention, evaporation is performed by moving or reciprocating an evaporation source holder in which a plurality of containers (crucible) each encapsulating an evaporation material are set only in an X direction while moving a substrate at regular intervals. Further, in the plurality of evaporation source holders, film thickness meters of adjacent evaporation sources are disposed alternately so as to sandwich the movement pathway of the substrate.
摘要翻译：本发明的目的是提高使用EL材料的效率，并提供一种沉积方法和一种蒸镀装置，它是成膜系统中成膜系统之一，并且在形成EL层时膜厚度均匀性优异。根据本发明，通过移动或往复运动蒸发源夹持器来进行蒸发，其中，每个包封蒸发材料的多个容器（坩埚）仅在X方向上设置，同时以一定间隔移动基板。此外，在多个蒸发源保持器中，交替地设置相邻蒸发源的膜厚计，以夹持基板的移动路径。

67. 发明申请

US20050067953A1 Light emitting device and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20050067953A1
公开(公告)日：2005-03-31
申请号：US10933507
申请日：2004-09-03
申请人： Shunpei Yamazaki , Junichiro Sakata , Takashi Hamada , Masaharu Nagai , Yutaka Matsuda
发明人： Shunpei Yamazaki , Junichiro Sakata , Takashi Hamada , Masaharu Nagai , Yutaka Matsuda
IPC分类号： H01L21/316 , H01L27/32 , H01L51/52 , H05B33/00 , H05B33/10 , H05B33/12 , H05B33/20 , H05B33/22
CPC分类号： H01L27/3258 , H01L21/31608 , H01L27/3246 , H01L27/3276 , H01L51/5206 , H01L51/5218 , H01L51/5246 , H01L51/5281 , H01L51/529 , H01L2251/5315 , H01L2251/5323
摘要： An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain-chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained.
摘要翻译：本发明的目的是提供一种具有低功耗和高稳定性的发光器件，同时提高了在发光元件中产生的光的提取效率。至少层间绝缘膜（包括平坦化膜），阳极和覆盖阳极的边缘部分的堤包含化学和物理稳定的氧化硅，或者由以氧化硅为主要成分的材料按顺序制成以实现具有高稳定性的发光器件。除了根据本发明的结构提高发光面板的效率（亮度/电流）之外，还可以抑制发光面板中的发热。因此，获得了对发光器件的可靠性的协同效应。

68. 发明授权

US08994024B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08994024B2
公开(公告)日：2015-03-31
申请号：US12835905
申请日：2010-07-14
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara
IPC分类号： H01L29/04 , H01L27/12 , H01L29/45
CPC分类号： H01L27/124 , H01L27/1225 , H01L29/45
摘要： A highly reliable display device which has high aperture ratio and includes a transistor with stable electrical characteristics is manufactured. The display device includes a driver circuit portion and a display portion over the same substrate. The driver circuit portion includes a driver circuit transistor and a driver circuit wiring. A source electrode and a drain electrode of the driver circuit transistor are formed using a metal. A channel layer of the driver circuit transistor is formed using an oxide semiconductor. The driver circuit wiring is formed using a metal. The display portion includes a pixel transistor and a display portion wiring. A source electrode and a drain electrode of the pixel transistor are formed using a transparent oxide conductor. A semiconductor layer of the pixel transistor is formed using the oxide semiconductor. The display portion wiring is formed using a transparent oxide conductor.
摘要翻译：制造具有高开口率并且包括具有稳定电特性的晶体管的高度可靠的显示装置。显示装置包括在同一基板上的驱动电路部分和显示部分。驱动器电路部分包括驱动电路晶体管和驱动电路布线。使用金属形成驱动电路晶体管的源电极和漏电极。使用氧化物半导体形成驱动电路晶体管的沟道层。驱动电路布线使用金属形成。显示部分包括像素晶体管和显示部分布线。使用透明氧化物导体形成像素晶体管的源电极和漏电极。使用氧化物半导体形成像素晶体管的半导体层。显示部分布线使用透明氧化物导体形成。

69. 发明授权

US08906756B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08906756B2
公开(公告)日：2014-12-09
申请号：US13110314
申请日：2011-05-18
申请人： Shunpei Yamazaki , Ryosuke Watanabe , Suzunosuke Hiraishi , Junichiro Sakata
发明人： Shunpei Yamazaki , Ryosuke Watanabe , Suzunosuke Hiraishi , Junichiro Sakata
IPC分类号： H01L21/00 , H01L21/84 , H01L21/02 , H01L29/786 , H01L27/12
CPC分类号： H01L21/477 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/66969 , H01L29/7869
摘要： An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability. In a manufacturing process of a bottom-gate transistor including an oxide semiconductor layer, heat treatment in an atmosphere containing oxygen and heat treatment in vacuum are sequentially performed for dehydration or dehydrogenation of the oxide semiconductor layer. In addition, irradiation with light having a short wavelength is performed concurrently with the heat treatment, whereby elimination of hydrogen, OH, or the like is promoted. A transistor including an oxide semiconductor layer on which dehydration or dehydrogenation treatment is performed through such heat treatment has improved stability, so that variation in electrical characteristics of the transistor due to light irradiation or a bias-temperature stress (BT) test is suppressed.
摘要翻译：目的在于提供一种具有稳定的电气特性和高可靠性的氧化物半导体的半导体装置。在包括氧化物半导体层的底栅晶体管的制造工艺中，在氧化物气氛中进行热处理，在真空中进行热处理，依次进行氧化物半导体层的脱水或脱氢。此外，与热处理同时进行具有短波长的光的照射，由此促进氢，OH等的消除。包括通过这种热处理进行脱水或脱氢处理的氧化物半导体层的晶体管具有改善的稳定性，从而抑制了由于光照射或偏压温度应力（BT）测试而导致的晶体管的电特性的变化。

70. 发明授权

US08742660B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08742660B2
公开(公告)日：2014-06-03
申请号：US13034871
申请日：2011-02-25
申请人： Shunpei Yamazaki , Junichiro Sakata , Kaoru Tsuchiya
发明人： Shunpei Yamazaki , Junichiro Sakata , Kaoru Tsuchiya
IPC分类号： H01J1/62
CPC分类号： H01L27/3246 , H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L27/3281 , H01L27/3283 , H01L27/3288 , H01L51/52 , H01L51/5206 , H01L51/5234 , H01L51/5253 , H01L51/5262 , H01L2251/5323
摘要： It is an object of the present invention is to provide a light-emitting device in which high luminance can be obtained with low power consumption by improving the extraction efficiency. A light-emitting device of the invention comprises an insulating film, a plurality of first electrodes being in contact with the insulating film and formed on the insulating film to be in parallel, an electroluminescent layer formed over the plurality of first electrodes, and a plurality of second electrodes intersecting with the plurality of first electrodes and formed over the electroluminescent layer in parallel, wherein the insulating film contains nitrogen and silicon and the first electrodes contain a conductive transparent oxide material and silicon oxide.
摘要翻译：本发明的目的是提供一种通过提高提取效率可以以低功耗获得高亮度的发光装置。本发明的发光器件包括绝缘膜，多个第一电极与绝缘膜接触并形成在绝缘膜上并联，形成在多个第一电极上的电致发光层，以及多个第一电极的第二电极与所述多个第一电极相交并并联形成在所述电致发光层上，其中所述绝缘膜包含氮和硅，并且所述第一电极包含导电透明氧化物材料和氧化硅。

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