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61. 发明授权

US5007873A Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process 失效
标题翻译：具有由基本上正常的气相沉积工艺形成的发射极的非平面场致发射器件
公开(公告)号：US5007873A
公开(公告)日：1991-04-16
申请号：US477694
申请日：1990-02-09
申请人： Herbert Goronkin , Robert C. Kane
发明人： Herbert Goronkin , Robert C. Kane
IPC分类号： H01J1/304 , H01J9/02
CPC分类号： H01J3/022 , H01J1/3042 , H01J9/025
摘要： A cold cathode field emission device having a cone shaped emitter (112, 208) formed with a substantially normal (but not absolutely normal) vapor deposition process (109) wherein the substrate (101, 201) need not be rotated with respect to the vapor deposition target. The vapor deposition process forms an encapsulating layer (111, 207) that can either be utilized as an electrode within the completed device, or that can be removed to allow subsequent construction of additional layers.
摘要翻译：一种冷阴极场致发射器件，其具有形成有基本上正常（但不是绝对正常）的气相沉积工艺（109）的锥形发射器（112,208），其中衬底（101,201）不需要相对于蒸汽旋转沉积目标。气相沉积工艺形成一个封装层（111,207），该封装层可以在完成的器件中用作电极，也可以被去除以允许随后构造另外的层。

62. 发明授权

US4769683A Superlattice gate field effect transistor 失效
标题翻译：超晶格栅场效应晶体管
公开(公告)号：US4769683A
公开(公告)日：1988-09-06
申请号：US64629
申请日：1987-06-22
申请人： Herbert Goronkin , George N. Maracas , Richard Nguyen
发明人： Herbert Goronkin , George N. Maracas , Richard Nguyen
IPC分类号： H01L29/423 , H01L29/775 , H01L27/12
CPC分类号： B82Y10/00 , H01L29/42316 , H01L29/775
摘要： A quasi 1-dimensional electron gas transistor has been provided having a source electrode and a drain electrode. A plurality of electrodes are positioned between the source and drain electrodes in a manner which are parallel to the electron flow between the source and the drain electrodes. In one embodiment, the electrodes are interconnected by a gate electrode while in an alternate embodiment all the electrodes are connected to the source electrode and insulated from the gate electrode. This device provides a quantum wire for quasi 1-dimensional electron flow.
摘要翻译：已经提供了具有源电极和漏电极的准一维电子气体晶体管。以与源极和漏极之间的电子流平行的方式将多个电极定位在源极和漏极之间。在一个实施例中，电极通过栅电极互连，而在替代实施例中，所有电极都连接到源电极并与栅电极绝缘。该器件为准1维电子流提供量子线。

63. 发明授权

US06989235B2 Single molecule detection of bio-agents using the F1-ATPase biomolecular motor 有权
标题翻译：使用F1-ATPase生物分子运动的单分子检测生物试剂
公开(公告)号：US06989235B2
公开(公告)日：2006-01-24
申请号：US10365378
申请日：2003-02-11
申请人： Lars Chapsky , Wayne D. Frasch , Chia Fu Chou , Frederic Zenhausern , Herbert Goronkin
发明人： Lars Chapsky , Wayne D. Frasch , Chia Fu Chou , Frederic Zenhausern , Herbert Goronkin
IPC分类号： C12Q1/68 , C12P19/34
CPC分类号： B82Y5/00 , C12Q1/6825 , C12Q2563/155
摘要： An exemplary system and method of employing DNA hybridization for the detection of bio-agents is disclosed as comprising inter alia a biomolecular rotary motor (150); a capture probe DNA fragment (140) effectively attached to said biomolecular motor (150); a target DNA fragment (130) suitably adapted for hybridization with said capture probe DNA (140); a signal probe DNA fragment (120) suitably adapted for hybridization with said target DNA (130); and a fluorescent bead (100) attached to said signal probe DNA (120). Disclosed features and specifications may be variously controlled, adapted or otherwise optionally modified to improve certain device fabrication parameters and/or performance metrics.
摘要翻译：公开了使用DNA杂交来检测生物试剂的示例性系统和方法，其特别包括生物分子旋转马达（150）; 有效连接到所述生物分子马达（150）的捕获探针DNA片段（140）; 适于与所述捕获探针DNA（140）杂交的靶DNA片段（130）; 适于与所述靶DNA（130）杂交的信号探针DNA片段（120）; 和连接到所述信号探针DNA（120）上的荧光珠（100）。公开的特征和规范可以被不同地控制，适应或以其他方式任意地修改以改进某些设备制造参数和/或性能度量。

64. 发明授权

US06452205B2 Sparse-carrier devices and method of fabrication 失效
标题翻译：稀疏载波器件及其制造方法
公开(公告)号：US06452205B2
公开(公告)日：2002-09-17
申请号：US09819438
申请日：2001-03-29
申请人： Raymond K. Tsui , Kumar Shiralagi , Herbert Goronkin
发明人： Raymond K. Tsui , Kumar Shiralagi , Herbert Goronkin
IPC分类号： H01L2906
CPC分类号： B82Y10/00 , H01L29/045 , H01L29/127
摘要： A sparse-carrier device including a crystal structure (10) formed of a first material and having a crystallographic facet (26) with a width (w) and a length and quantum dots (30) formed of a second material and positioned in at least one row on the crystallographic facet (26). The at least one row of quantum dots (30) extends along the length of the crystallographic facet (26) and is at least one quantum dot (30) wide (w) and a plurality of quantum dots long. The number of quantum dot rows determined by the width (w) of the crystallographic facet (26). The row of quantum dots (30) form a building block for circuits based on sparse or single electron devices.
摘要翻译：一种稀疏载体器件，包括由第一材料形成并具有宽度（w）和长度的晶体结构（26）和由第二材料形成并且至少位于第二材料的量子点（30）的晶体结构（10）在晶面上有一排（26）。至少一行量子点（30）沿着结晶小面（26）的长度延伸，并且是至少一个量子点（30）宽（w）和多个量子点长。由晶面（26）的宽度（w）确定的量子点行数。量子点行（30）形成基于稀疏或单电子器件的电路的构建块。

65. 发明授权

US06211559B1 Symmetric magnetic tunnel device 失效
标题翻译：对称磁隧道装置
公开(公告)号：US06211559B1
公开(公告)日：2001-04-03
申请号：US09032107
申请日：1998-02-27
申请人： Theodore Zhu , Herbert Goronkin
发明人： Theodore Zhu , Herbert Goronkin
IPC分类号： H01L2982
CPC分类号： H01F10/3263 , B82Y10/00 , B82Y25/00 , H01F10/3254 , H01L43/08
摘要： A symmetric magnetic tunnel device including first and second magnetic tunnel junctions each including a pinned magnetic layer, an insulating tunnel layer and a free magnetic layer stacked in parallel juxtaposition to allow tunneling of electrons through the insulating tunnel layer between the pinned and free magnetic layers. The first and second magnetic tunnel junctions positioned in parallel juxtaposition so as to form a continuous electron path through the first and second magnetic tunnel junctions and to provide a cell signal across the first and second magnetic tunnel junctions greater than a cell signal across each of the first and second magnetic tunnel junctions individually.
摘要翻译：一种包括第一和第二磁隧道结的对称磁隧道装置，每个磁隧道结包括被并置的磁性层，绝缘隧道层和自由磁性层，并联并置，以允许电子隧道穿过固定和自由磁性层之间的绝缘隧道层。第一和第二磁性隧道结位于平行并置的位置，以便形成穿过第一和第二磁性隧道结的连续电子路径，并且跨越第一和第二磁性隧道结提供大于跨越第一和第二磁性隧道结的单元信号的单元信号第一和第二磁性隧道结单独。

66. 发明授权

US5160982A Phonon suppression in quantum wells 失效
标题翻译：量子阱中的声子抑制
公开(公告)号：US5160982A
公开(公告)日：1992-11-03
申请号：US895228
申请日：1992-06-08
申请人： Herbert Goronkin , X. Theodore Zhu , George N. Maracas
发明人： Herbert Goronkin , X. Theodore Zhu , George N. Maracas
IPC分类号： H01L29/12
CPC分类号： B82Y10/00 , H01L29/122
摘要： An enhanced mobility semiconductor comprising a host quantum well having at least two charge carrier barrier layers of a wide bandgap material, each of the two charge carrier barrier layers being separated by a conducting region containing charge carriers is provided. A number of phonon barriers having a predetermined thickness are formed in the conducting region wherein the predetermined thickness is chosen to allow charge carrier tunneling through the phonon barriers.
摘要翻译：提供了一种增强的迁移率半导体，其包括具有宽带隙材料的至少两个电荷载流子阻挡层的主量子阱，两个电荷载流子阻挡层中的每一个由包含电荷载流子的导电区域分开。在导电区域中形成许多具有预定厚度的声子屏障，其中选择预定厚度以允许载流子隧道穿过声子屏障。

67. 发明授权

US5142341A Enhanced conductivity quantum well structure having resonant interface phonon induced charge coupling 失效
标题翻译：具有谐振界面声子诱导电荷耦合的增强的电导量子阱结构
公开(公告)号：US5142341A
公开(公告)日：1992-08-25
申请号：US681261
申请日：1991-04-08
申请人： Herbert Goronkin , X. Theodore Zhu
发明人： Herbert Goronkin , X. Theodore Zhu
IPC分类号： H01L29/06 , H01L29/15 , H01L29/66
CPC分类号： H01L29/155
摘要： An enhanced conductivity structure comprising first and second coupled quantum well channel layers spaced from each other by a barrier layer of predetermined thickness is provided. The barrier layer and other supporting layers comprise a first material type, while the first and second quantum wells comprise a second material type having a narrower bandgap than the first material type. Each of the quantum wells is thin to confine current flow to the plane of the quantum wells. First and second spacer layers of the first material type are formed adjacent to each of the quantum wells, and planar doping layers are provided on each of the spacer layers. First and second buffer layers of the first material type are formed adjacent to each of the spacer layers.
摘要翻译：提供了包括通过预定厚度的阻挡层彼此隔开的第一和第二耦合量子阱沟道层的增强的导电结构。阻挡层和其它支撑层包括第一材料类型，而第一和第二量子阱包括具有比第一材料类型更窄的带隙的第二材料类型。每个量子阱都很薄，以将电流限制到量子阱的平面。第一材料类型的第一和第二间隔层形成为与每个量子阱相邻，并且平面掺杂层设置在每个间隔层上。第一材料类型的第一和第二缓冲层形成为与每个间隔层相邻。

68. 发明授权

US4340900A Mesa epitaxial diode with oxide passivated junction and plated heat sink 失效
标题翻译：具有氧化物钝化结和电镀散热片的Mesa外延二极管
公开(公告)号：US4340900A
公开(公告)日：1982-07-20
申请号：US50272
申请日：1979-06-19
申请人： Herbert Goronkin
发明人： Herbert Goronkin
IPC分类号： H01L23/14 , H01L23/36 , H01L29/861 , H01L29/93 , H01L29/06 , H01L23/02 , H01L29/90
CPC分类号： H01L29/93 , H01L23/142 , H01L23/36 , H01L29/861 , H01L2924/0002 , H01L2924/3011
摘要： An oxide passivated mesa epitaxial diode with an integral heat sink, and a process by which it may be fabricated. The passivation layer of highly pure thermally grown SiO.sub.2 is formed over the mesa walls in the region of the pn junction without causing a reaction between the contact metals and their surroundings during the high temperature environment imposed during thermal growth. The heat sink is deposited after the SiO.sub.2 passivation has been grown, replacing a polycrystalline silicon layer beneath the mesa formation which was used as a temporary structural support. Dopant, to form the pn junction, is introduced into the silicon wafer after the formation of the passivation layer but before the heat sink is deposited.
摘要翻译：具有整体散热器的氧化物钝化的台面外延二极管，以及可以制造的方法。在热生长期间施加的高温环境中，在pn结区域的台面壁上形成高纯度热生长SiO 2的钝化层，而不会在接触金属及其周围环境之间引起反应。在SiO 2钝化生长之后沉积散热器，代替用作临时结构支撑的台面形成之下的多晶硅层。形成pn结的掺杂剂在形成钝化层之后但在沉积散热片之前被引入到硅晶片中。

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