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61. 发明授权

US06971302B2 Hydraulic circuit for heavy equipment option apparatus using boom confluence spool 有权
标题翻译：液压回路重型设备选配装置采用吊臂汇流阀芯
公开(公告)号：US06971302B2
公开(公告)日：2005-12-06
申请号：US10847929
申请日：2004-05-17
申请人： Jae Hoon Lee
发明人： Jae Hoon Lee
IPC分类号： E02F9/20 , E02F9/22 , F15B11/02 , F15B11/028 , F15B11/16 , F15B20/00 , F15B13/04
CPC分类号： F15B20/00 , E02F9/2235
摘要： There is provided a hydraulic circuit for an option apparatus of heavy equipment using a boom confluence spool, comprising a poppet valve installed at a flow path of a supply side of a spool for the option apparatus, a boom confluence spool that controls the flow rate supplied to the option apparatus and work apparatus and is installed at a direct upstream of the spool of the option apparatus, a second electromagnetic proportion reducing valve that is installed at a flow path between the pilot pump and the boom confluence spool and outputs a secondary pressure in response to an electric signal from the controller and controls the boom confluence spool, and a first spool that is installed at a downstream of the poppet valve and is switched when a pressure difference between upstream and downstream of the boom confluence spool is larger than a set value.
摘要翻译：提供了一种用于使用吊杆汇流阀芯的重型设备的选件装置的液压回路，包括安装在用于可选装置的阀芯的供给侧的流动路径处的提升阀，用于控制供应的流量的吊杆汇合阀芯安装在可选装置和工作装置的直接上游，安装在选配装置的卷轴的上游;第二电磁比例减压阀，安装在先导泵和吊臂汇合线轴之间的流动路径处，并输出二次压力响应于来自控制器的电信号并控制起重臂汇合线轴，以及第一线轴，其安装在提升阀的下游，并且当起重臂汇流线轴的上游和下游之间的压力差大于设定值时切换值。

62. 发明授权

US08815688B2 Method of manufacturing power device 有权
标题翻译：功率器件制造方法
公开(公告)号：US08815688B2
公开(公告)日：2014-08-26
申请号：US13550920
申请日：2012-07-17
申请人： Jae Hoon Lee , Ki Se Kim , Jung Hee Lee , Ki Sik Im , Dong Seok Kim
发明人： Jae Hoon Lee , Ki Se Kim , Jung Hee Lee , Ki Sik Im , Dong Seok Kim
IPC分类号： H01L29/778
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0878 , H01L29/2003
摘要： A method of manufacturing a power device includes forming a first drift region on a substrate. A trench is formed by patterning the first drift region. A second drift region is formed by growing n-gallium nitride (GaN) in the trench, and alternately disposing the first drift region and the second drift region. A source electrode contact layer is formed on the second drift region. A source electrode and a gate electrode are formed on the source electrode contact layer. A drain electrode is formed on one side of the substrate which is an opposite side of the first drift region.
摘要翻译：制造功率器件的方法包括在衬底上形成第一漂移区。通过图案化第一漂移区域形成沟槽。通过在沟槽中生长氮化镓（GaN）并且交替地设置第一漂移区和第二漂移区，形成第二漂移区。源电极接触层形成在第二漂移区上。在源电极接触层上形成源电极和栅电极。在基板的与第一漂移区域相反的一侧上形成漏电极。

63. 发明授权

US08648459B2 Nitride based semiconductor package and method of manufacturing the same and bonding substrate 失效
标题翻译：氮化物基半导体封装及其制造方法和接合基板
公开(公告)号：US08648459B2
公开(公告)日：2014-02-11
申请号：US13605112
申请日：2012-09-06
申请人： Jae Hoon Lee
发明人： Jae Hoon Lee
IPC分类号： H01L23/04 , H01L21/28
CPC分类号： H01L24/81 , H01L23/13 , H01L23/49827 , H01L24/13 , H01L24/16 , H01L2221/6835 , H01L2224/13013 , H01L2224/13023 , H01L2224/131 , H01L2224/1329 , H01L2224/13294 , H01L2224/133 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/16237 , H01L2224/48 , H01L2224/81005 , H01L2224/8113 , H01L2224/81132 , H01L2224/8114 , H01L2224/81193 , H01L2224/8185 , H01L2924/1032 , H01L2924/12032 , H01L2924/12042 , H01L2924/15787 , H01L2924/0503 , H01L2924/014 , H01L2924/00014 , H01L2924/00015 , H01L2924/00
摘要： A nitride based semiconductor package includes a nitride based semiconductor device, a package substrate, and a bonding substrate. The semiconductor device includes, on a surface thereof, a first electrode pattern having a source electrode, a drain electrode and a gate electrode. The bonding substrate includes, on a first surface thereof, a second electrode pattern corresponding to the first electrode pattern, and at least one first groove pattern. The first groove pattern exposes the second electrode pattern. The first electrode pattern is received in the at least one first groove pattern. The second electrode pattern is bonded to the first electrode pattern received in the at least one first groove pattern. A second surface of the bonding substrate is bonded to the package substrate.
摘要翻译：氮化物基半导体封装包括氮化物基半导体器件，封装衬底和接合衬底。半导体器件在其表面上包括具有源电极，漏电极和栅电极的第一电极图案。接合基板在其第一表面上包括对应于第一电极图案的第二电极图案和至少一个第一凹槽图案。第一凹槽图案暴露第二电极图案。第一电极图案被接收在至少一个第一凹槽图案中。第二电极图案被接合到以至少一个第一凹槽图案接收的第一电极图案。接合基板的第二表面接合到封装基板。

64. 发明授权

US08564022B2 Power device and method for manufacturing the same 有权
标题翻译：动力装置及其制造方法
公开(公告)号：US08564022B2
公开(公告)日：2013-10-22
申请号：US13353990
申请日：2012-01-19
申请人： Jae Hoon Lee
发明人： Jae Hoon Lee
IPC分类号： H01L29/06 , H01L29/66
CPC分类号： H01L29/0615 , H01L29/1058 , H01L29/2003 , H01L29/66431 , H01L29/66462 , H01L29/7787
摘要： Provided is a power device. The power device may include a two-dimensional electron gas (2-DEG) layer in a portion corresponding to a gate electrode pattern since a second nitride layer is further formed on a lower portion of the gate electrode pattern after a first nitride layer is formed and thus, may be capable of performing a normally-OFF operation. Accordingly, the power device may adjust generation of the 2-DEG layer based on a voltage of a gate, and may reduce power consumption. The power device may regrow only the portion corresponding to the gate electrode pattern or may etch a portion excluding the portion corresponding to the gate electrode pattern and thus, a recess process may be omissible, a reproducibility of the power device may be secured, and a manufacturing process may be simplified.
摘要翻译：提供电力设备。功率器件可以包括对应于栅电极图案的部分中的二维电子气（2-DEG）层，因为在形成第一氮化物层之后在栅电极图案的下部还形成第二氮化物层因此，能够进行常关动作。因此，功率器件可以基于栅极的电压来调整2-DEG层的产生，并且可以降低功耗。功率器件可以只再生对应于栅极电极图案的部分，或者可以蚀刻除了与栅电极图案对应的部分之外的部分，因此凹陷处理可以是不允许的，可以确保功率器件的再现性，并且制造过程可以被简化。

65. 发明申请

US20130148016A1 CAMERA MODULE 审中-公开
标题翻译：相机模块
公开(公告)号：US20130148016A1
公开(公告)日：2013-06-13
申请号：US13408995
申请日：2012-02-29
申请人： Seung Yun Oh , Jae Hoon Lee , In Taek Song , Tae Young Kim
发明人： Seung Yun Oh , Jae Hoon Lee , In Taek Song , Tae Young Kim
IPC分类号： H04N5/225
CPC分类号： H04N5/2253
摘要： Disclosed herein is a camera module. The camera module according to preferred embodiments of the present invention includes: a housing; a printed circuit board disposed in the housing and having a heat dissipating hole formed at a first side thereof; an image sensor bonded to the printed circuit board and disposed on one surface of the heat dissipating hole; and a heat dissipating part having one side contacting the image sensor and the printed circuit board through the heat dissipating hole and the other side disposed at the outside of the housing to discharge heat generated from the image sensor and the printed circuit board to the outside of the housing.
摘要翻译：这里公开了一种相机模块。根据本发明的优选实施例的相机模块包括：壳体; 布置在所述壳体中并具有在其第一侧形成的散热孔的印刷电路板; 结合到印刷电路板并设置在散热孔的一个表面上的图像传感器; 以及散热部，其具有通过所述散热孔与所述图像传感器和所述印刷电路板接触的一侧，所述散热部设置在所述壳体的外部，以将从所述图像传感器和所述印刷电路板产生的热量排出到住房。

66. 发明申请

US20130009164A1 POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：电力装置及其制造方法
公开(公告)号：US20130009164A1
公开(公告)日：2013-01-10
申请号：US13353990
申请日：2012-01-19
申请人： Jae Hoon Lee
发明人： Jae Hoon Lee
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0615 , H01L29/1058 , H01L29/2003 , H01L29/66431 , H01L29/66462 , H01L29/7787
摘要： Provided is a power device. The power device may include a two-dimensional electron gas (2-DEG) layer in a portion corresponding to a gate electrode pattern since a second nitride layer is further formed on a lower portion of the gate electrode pattern after a first nitride layer is formed and thus, may be capable of performing a normally-OFF operation. Accordingly, the power device may adjust generation of the 2-DEG layer based on a voltage of a gate, and may reduce power consumption. The power device may regrow only the portion corresponding to the gate electrode pattern or may etch a portion excluding the portion corresponding to the gate electrode pattern and thus, a recess process may be omissible, a reproducibility of the power device may be secured, and a manufacturing process may be simplified.
摘要翻译：提供电力设备。功率器件可以包括对应于栅电极图案的部分中的二维电子气（2-DEG）层，因为在形成第一氮化物层之后在栅电极图案的下部还形成第二氮化物层因此，能够进行常关动作。因此，功率器件可以基于栅极的电压来调整2-DEG层的产生，并且可以降低功耗。功率器件可以只再生对应于栅极电极图案的部分，或者可以蚀刻除了与栅电极图案对应的部分之外的部分，因此凹陷处理可以是不允许的，可以确保功率器件的再现性，并且制造过程可以被简化。

67. 发明授权

US08301346B2 Traveling system for construction equipment 有权
标题翻译：施工设备旅行系统
公开(公告)号：US08301346B2
公开(公告)日：2012-10-30
申请号：US12409842
申请日：2009-03-24
申请人： Jae Hoon Lee
发明人： Jae Hoon Lee
IPC分类号： G06F19/00
CPC分类号： F16H61/431 , F16H61/4061 , F16H61/4148 , F16H61/421
摘要： A traveling system for construction equipment is provided, which can secure an initial traveling manipulability regardless of a low-speed traveling or a high-speed traveling. If the high-speed traveling is selected and the traveling is manipulated, the inclination angle of a swash plate of a hydraulic pump is variably controlled, so that the discharge flow rate of the hydraulic pump exceeds a predetermined flow rate in comparison to the low-speed traveling.
摘要翻译：提供了一种用于施工设备的行驶系统，无论低速行驶还是高速行驶，都能确保初始的行驶操纵性。如果选择高速行驶并且行驶被操纵，则液压泵的斜盘的倾斜角度被可变地控制，使得液压泵的排出流量与低速行驶相比，速度旅行。

68. 发明申请

US20110110127A1 POWER FACTOR CORRECTION CIRCUIT 有权
标题翻译：功率因数校正电路
公开(公告)号：US20110110127A1
公开(公告)日：2011-05-12
申请号：US12674618
申请日：2008-08-22
申请人： Jae Hoon Lee
发明人： Jae Hoon Lee
IPC分类号： H02M1/42
CPC分类号： G05F1/70
摘要： The present invention relates to a power factor correction circuit that can reduce distortion of input current in a switching mode power supply. The power factor correction circuit provided in the present invention basically comprises a first inductor which is electrically connected at a first end thereof to an input terminal, a second coil that is coupled to the first inductor to form an induced voltage, a switch electrically connected to the a second terminal of the first inductor, and a switching control unit for controlling turn-on and turn-off of the switch. In such a power factor correction circuit of the present invention, the switching control unit is configured to differently set a turn-on period of the switch depending on the input voltage by generating a signal for controlling the turn-off of the switch using a second coil voltage induced at the secondary coil of the inductor by input voltage or a directly sensed input voltage. Accordingly, distortion of input current can be effectively corrected.
摘要翻译：本发明涉及能够减少开关模式电源中的输入电流的失真的功率因数校正电路。本发明提供的功率因数校正电路基本上包括：第一电感器，其第一端电连接到输入端子;第二线圈，其耦合到第一电感器以形成感应电压，开关电连接到第一电感器的第二端子和用于控制开关的接通和断开的开关控制单元。在本发明的这种功率因数校正电路中，开关控制单元被配置为根据输入电压不同地设置开关的导通周期，通过产生用于控制开关的关断的信号，使用第二通过输入电压或直接感应的输入电压在电感器的次级线圈感应的线圈电压。因此，可以有效地校正输入电流的失真。

69. 发明授权

US07831755B2 Method and system for interfacing a plurality of memory devices using an MMC/SD protocol 失效
标题翻译：使用MMC / SD协议来连接多个存储器件的方法和系统
公开(公告)号：US07831755B2
公开(公告)日：2010-11-09
申请号：US12034053
申请日：2008-02-20
申请人： Kil-Joong Yun , Seon Taek Kim , Jae Hoon Lee
发明人： Kil-Joong Yun , Seon Taek Kim , Jae Hoon Lee
IPC分类号： H05K7/10 , G06F13/14 , G06F13/36
CPC分类号： G06F13/385
摘要： A method for establishing an interface between a host and a plurality of memory devices of a system that utilizes a Multimedia Card (MMC) or Digital (SD) protocol according to an interleaving scheme. A host sequentially transmits a first sequence of commands and data to a system bus in order to allow a first memory device among the memory devices to perform a first operation. The host then transmits a second sequence of commands and data to the system bus to allow a second memory device among the memory devices to perform a second operation after transmitting the first sequence of commands and data.
摘要翻译：一种用于根据交织方案在主机与利用多媒体卡（MMC）或数字（SD））协议的系统的存储设备之间建立接口的方法。主机顺序地向系统总线发送第一序列命令和数据，以便允许存储器件中的第一存储器件执行第一操作。然后主机向系统总线发送第二序列命令和数据，以允许存储器件中的第二存储器件在发送第一命令序列和数据之后执行第二操作。

70. 发明授权

US07436001B2 Vertical GaN-based LED and method of manufacturing the same 有权
标题翻译：垂直GaN基LED及其制造方法
公开(公告)号：US07436001B2
公开(公告)日：2008-10-14
申请号：US11490254
申请日：2006-07-21
申请人： Jae Hoon Lee , Bang Won Oh , Hee Seok Choi , Jeong Tak Oh , Seok Beom Choi , Su Yeol Lee
发明人： Jae Hoon Lee , Bang Won Oh , Hee Seok Choi , Jeong Tak Oh , Seok Beom Choi , Su Yeol Lee
IPC分类号： H01L27/15
CPC分类号： H01L33/22 , H01L33/14
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.
摘要翻译：提供了一种垂直GaN基LED及其制造方法。垂直GaN基LED包括n电极，第一n型GaN层，第一AlGaN层，GaN层，第二AlGaN层，第二n型GaN层，有源层，p型 GaN层和结构支撑层。第一n型GaN层具有具有多个突起的不均匀图案。第一AlGaN层形成在第一n型GaN层下方，并且GaN层形成在第一AlGaN层的下方。有源层形成在第二n型GaN层下面，p型GaN层形成在有源层下面。在p型GaN层的下方形成有p电极，在p电极的下方形成有结构支撑层。

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