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61. 发明申请

US20120208357A1 METHODS AND SYSTEMS FOR FORMING THIN FILMS 失效
公开(公告)号：US20120208357A1
公开(公告)日：2012-08-16
申请号：US13398988
申请日：2012-02-17
申请人： Philip A. Kraus , Sandeep Nijhawan , Thai Cheng Chua
发明人： Philip A. Kraus , Sandeep Nijhawan , Thai Cheng Chua
IPC分类号： H01L21/20
CPC分类号： H01L21/2056 , C23C16/303 , C23C16/4554 , C23C16/45542 , C23C16/45551 , H01L21/0237 , H01L21/0254 , H01L21/0262 , Y10T117/1016
摘要： A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.

62. 发明授权

US07674352B2 System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus 失效
标题翻译：使用喷头装置将气态混合物沉积到基材表面上的系统和方法
公开(公告)号：US07674352B2
公开(公告)日：2010-03-09
申请号：US11564198
申请日：2006-11-28
申请人： David Bour , Lori Washington , Sandeep Nijhawan , Ronald Stevens , Jacob Smith , Alexander Tam , Nyi Oo Myo , Steve Park , Rosemary Twist , Garry Kwong , Jie Su
发明人： David Bour , Lori Washington , Sandeep Nijhawan , Ronald Stevens , Jacob Smith , Alexander Tam , Nyi Oo Myo , Steve Park , Rosemary Twist , Garry Kwong , Jie Su
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45572 , C23C16/45574
摘要： A gaseous mixture is deposited onto a substrate surface using a showerhead. A first plenum of the showerhead has a plurality of channels fluidicly coupled with an interior of a processing chamber. A second plenum gas flows through a plurality of tubes extending from a second plenum of the showerhead through the channels into the interior of the processing chamber. The diameter of the tubes is smaller than the diameter of the channels such that a first plenum gas flows into the interior of the processing chamber through a space defined between the outer surface of the tubes and the surface of the channels. The length and diameter of the tubes determine the level of distribution and the molar ratio of the first gas and the second gas in the gaseous mixture that is deposited on the surface of the substrate.
摘要翻译：使用喷头将气体混合物沉积到基底表面上。喷头的第一增压室具有与处理室的内部流体耦合的多个通道。第二增压气体流过从喷头的第二增压室通过通道延伸到处理室内部的多个管。管的直径小于通道的直径，使得第一增压气体通过限定在管的外表面和通道表面之间的空间流入处理室的内部。管的长度和直径确定沉积在基底表面上的气态混合物中的分布水平和第一气体与第二气体的摩尔比。

63. 发明申请

US20090194026A1 PROCESSING SYSTEM FOR FABRICATING COMPOUND NITRIDE SEMICONDUCTOR DEVICES 审中-公开
标题翻译：用于制备化合物氮化物半导体器件的处理系统
公开(公告)号：US20090194026A1
公开(公告)日：2009-08-06
申请号：US12023572
申请日：2008-01-31
申请人： BRIAN H. BURROWS , Lori D. Washington , Ronald Stevens , Kenric T. Choi , Anthony F. White , Roger N. Anderson , Sandeep Nijhawan , Joshua J. Podesta , Alexander Tam
发明人： BRIAN H. BURROWS , Lori D. Washington , Ronald Stevens , Kenric T. Choi , Anthony F. White , Roger N. Anderson , Sandeep Nijhawan , Joshua J. Podesta , Alexander Tam
IPC分类号： C23C16/54
CPC分类号： C23C16/54 , C30B25/08 , C30B29/403 , C30B35/00 , H01L21/67017 , H01L21/67115 , H01L21/67161 , H01L21/67207 , H01L21/68764 , H01L21/68771
摘要： One embodiment of a processing system for fabricating compound nitride semiconductor devices comprises one or more processing chamber operable with form a compound nitride semiconductor layer on a substrate, a transfer chamber coupled with the processing chamber, a loadlock chamber coupled with the transfer chamber, and a load station coupled with the loadlock chamber, wherein the load station comprises a conveyor tray movable to convey a carrier plate loaded with one or more substrates into the loadlock chamber. Compared to a single chamber reactor, the multi-chamber processing system expands the potential complexity and variety of compound structures. Additionally, the system can achieve higher quality and yield by specialization of individual chambers for specific epitaxial growth processes. Throughput is increased by simultaneous processing in multiple chambers.
摘要翻译：用于制造复合氮化物半导体器件的处理系统的一个实施例包括可在衬底上形成复合氮化物半导体层的可操作的一个或多个处理室，与处理室耦合的传送室，与传送室耦合的负载锁定室，以及加载站与负载锁定室耦合，其中装载站包括可移动以将装载有一个或多个基板的承载板输送到负载锁定室中的输送器托盘。与单室反应器相比，多室处理系统扩大了复合结构的潜在复杂性和多样性。此外，该系统可以通过专用于特定外延生长工艺的各个室来实现更高的质量和产量。通过在多个室中同时处理来提高吞吐量。

64. 发明授权

US07560364B2 Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films 失效
标题翻译：位错特异性侧向外延生长以减少氮化物膜的位错密度
公开(公告)号：US07560364B2
公开(公告)日：2009-07-14
申请号：US11429084
申请日：2006-05-05
申请人： David Bour , Sandeep Nijhawan , Jacob Smith , Lori Washington
发明人： David Bour , Sandeep Nijhawan , Jacob Smith , Lori Washington
IPC分类号： H01L21/20
CPC分类号： C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L29/2003 , H01L33/007 , H01L33/025
摘要： In accordance with the present invention, improved methods for reducing the dislocation density of nitride epitaxial films are provided. Specifically, an in-situ etch treatment is provided to preferentially etch the dislocations of the nitride epitaxial layer to prevent threading of the dislocations through the nitride epitaxial layer. Subsequent to etching of the dislocations, an epitaxial layer overgrowth is performed. In certain embodiments, the etching of the dislocations occurs simultaneously with growth of the epitaxial layer. In other embodiments, a dielectric mask is deposited within the etch pits formed at the dislocations prior to the epitaxial layer overgrowth.
摘要翻译：根据本发明，提供了用于降低氮化物外延膜的位错密度的改进方法。具体地，提供了原位蚀刻处理以优先蚀刻氮化物外延层的位错，以防止通过氮化物外延层的位错穿透。在蚀刻位错之后，进行外延层过度生长。在某些实施例中，位错的蚀刻与外延层的生长同时发生。在其它实施例中，在外延层过度生长之前，在形成于位错处的蚀刻坑内沉积电介质掩模。

65. 发明申请

US20090094085A1 Scheduling delivery of products via the internet 审中-公开
标题翻译：计划通过互联网交付产品
公开(公告)号：US20090094085A1
公开(公告)日：2009-04-09
申请号：US12287696
申请日：2008-10-09
申请人： Christopher Angel Kantarjiev , Sandeep Nijhawan , Justin Miller
发明人： Christopher Angel Kantarjiev , Sandeep Nijhawan , Justin Miller
IPC分类号： G06Q10/00
CPC分类号： G06Q10/08355 , G06F16/9574 , G06Q10/06 , G06Q10/06311 , G06Q10/06312 , G06Q10/06315 , G06Q10/06316 , G06Q10/08 , G06Q10/087 , G06Q20/203 , G06Q30/0201 , G06Q30/06 , G06Q30/0601 , G06Q30/0633 , G06Q30/0641 , H04L67/1097
摘要： Methods and apparatus for scheduling delivery of an order via a wide area network. A delivery interface is generated in which a plurality of delivery windows are presented. The delivery interface is transmitted to a remote platform via the wide area network. In response to selection of a first one of the plurality of delivery windows, it is determined whether the order may be delivered in the first delivery window. Where it is determined that the order may be delivered in the first delivery window, delivery of the order is scheduled in the first delivery window.
摘要翻译：用于通过广域网调度订单的方法和装置。产生传送接口，其中呈现多个传送窗口。传送接口通过广域网传输到远程平台。响应于对多个递送窗口中的第一个递送窗口的选择，确定订单是否可以在第一递送窗口中被递送。在确定订单可以在第一交货窗口中交付的情况下，在第一交货窗口中调度订单的交货。

66. 发明申请

US20080314311A1 HVPE SHOWERHEAD DESIGN 审中-公开
标题翻译： HVPE淋浴设计
公开(公告)号：US20080314311A1
公开(公告)日：2008-12-25
申请号：US11767520
申请日：2007-06-24
申请人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Jacob Grayson , Kenric T. Choi , Sumedh Acharya , Sandeep Nijhawan , Olga Kryliouk , Yuriy Melnik
发明人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Jacob Grayson , Kenric T. Choi , Sumedh Acharya , Sandeep Nijhawan , Olga Kryliouk , Yuriy Melnik
IPC分类号： C30B25/14 , C23C16/34
CPC分类号： C23C16/4488 , C23C16/45502 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T117/10
摘要： A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.
摘要翻译：提供了可用于沉积工艺的方法和装置，例如金属氮化物膜的氢化物气相外延（HVPE）沉积。第一组通道可以引入含金属的前体气体。第二组通道可以提供含氮前体气体。第一组和第二组通道可以散布，以分离含金属的前体气体和含氮前体气体，直到它们到达基底。惰性气体也可以通过通道向下流动，以帮助保持分离并限制通道处或附近的反应，从而防止通道上的不希望的沉积。

67. 发明授权

US07399653B2 Nitride optoelectronic devices with backside deposition 失效
标题翻译：氮化物光电子器件具有背面沉积
公开(公告)号：US07399653B2
公开(公告)日：2008-07-15
申请号：US11414581
申请日：2006-04-28
申请人： David Bour , Jacob Smith , Jie Su , Sandeep Nijhawan
发明人： David Bour , Jacob Smith , Jie Su , Sandeep Nijhawan
IPC分类号： H01L21/00
CPC分类号： H01L33/007
摘要： Nitride optoelectronic devices that have asymmetric double-sided structures and methods fabricating such structures are disclosed. Two n-type III-N layers are formed simultaneously over opposite sides of a substrate with substantially the same composition. Thereafter, a p-type III-N active layer is formed over one of the n-type III-N layers but not over the other.
摘要翻译：公开了具有非对称双面结构的氮化物光电器件和制造这种结构的方法。两个n型III-N层同时形成在具有基本相同组成的衬底的相对侧上。此后，在n型III-N层之一上形成p型III-N有源层，而不是在另一层上形成p型III-N有源层。

68. 发明申请

US20080124817A1 STRESS MEASUREMENT AND STRESS BALANCE IN FILMS 失效
标题翻译：膜中的应力测量和应力平衡
公开(公告)号：US20080124817A1
公开(公告)日：2008-05-29
申请号：US11508523
申请日：2006-08-23
申请人： David Bour , Sandeep Nijhawan , Lori D. Washington , Jacob W. Smith
发明人： David Bour , Sandeep Nijhawan , Lori D. Washington , Jacob W. Smith
IPC分类号： H01L21/66 , C23C16/00
CPC分类号： H01L22/20 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L22/12 , H01L33/007
摘要： Methods and systems are provided of fabricating a compound nitride semiconductor structure. A substrate is disposed within a processing chamber into which a group-III precursor and a nitrogen precursor are flowed. A layer is deposited over the substrate with a thermal chemical-vapor-deposition process using the precursors. The substrate is transferred to a transfer chamber where a temperature and a curvature of the layer are measured. The substrate is then transferred to a second processing chamber where a second layer is deposited.
摘要翻译：提供了制造复合氮化物半导体结构的方法和系统。衬底设置在III族前体和氮前体流动的处理室内。通过使用前体的热化学气相沉积工艺将一层沉积在衬底上。将衬底转移到测量层的温度和曲率的转移室。然后将衬底转移到沉积第二层的第二处理室。

69. 发明授权

US07374960B1 Stress measurement and stress balance in films 失效
标题翻译：薄膜中的应力测量和应力平衡
公开(公告)号：US07374960B1
公开(公告)日：2008-05-20
申请号：US11508523
申请日：2006-08-23
申请人： David Bour , Sandeep Nijhawan , Lori D. Washington , Jacob W. Smith
发明人： David Bour , Sandeep Nijhawan , Lori D. Washington , Jacob W. Smith
IPC分类号： H01L21/00
CPC分类号： H01L22/20 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L22/12 , H01L33/007
摘要： Methods and systems are provided of fabricating a compound nitride semiconductor structure. A substrate is disposed within a processing chamber into which a group-III precursor and a nitrogen precursor are flowed. A layer is deposited over the substrate with a thermal chemical-vapor-deposition process using the precursors. The substrate is transferred to a transfer chamber where a temperature and a curvature of the layer are measured. The substrate is then transferred to a second processing chamber where a second layer is deposited.
摘要翻译：提供了制造复合氮化物半导体结构的方法和系统。衬底设置在III族前体和氮前体流动的处理室内。通过使用前体的热化学气相沉积工艺将一层沉积在衬底上。将衬底转移到测量层的温度和曲率的转移室。然后将衬底转移到沉积第二层的第二处理室。

70. 发明授权

US07364991B2 Buffer-layer treatment of MOCVD-grown nitride structures 失效
标题翻译： MOCVD生长氮化物结构的缓冲层处理
公开(公告)号：US07364991B2
公开(公告)日：2008-04-29
申请号：US11414012
申请日：2006-04-27
申请人： David Bour , Jacob Smith , Sandeep Nijhawan
发明人： David Bour , Jacob Smith , Sandeep Nijhawan
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： H01L21/02513 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： Methods are disclosed for fabricating a compound nitride semiconductor structure. An amorphous buffer layer that includes nitrogen and a group-III element is formed over a substrate disposed within a substrate processing chamber at a first temperature. The temperature within the chamber is increased to a second temperature at which the amorphous buffer layer coalesces into crystallites over the substrate. The substrate is exposed to a corrosive agent to destroy at least some of the crystallites. A crystalline nitride layer is formed over the substrate at a third temperature using the crystallites remaining after exposure to the corrosive agent as seed crystals. The third temperature is greater than the first temperature. The crystalline nitride layer also includes nitrogen and a group-III element.
摘要翻译：公开了用于制造复合氮化物半导体结构的方法。在第一温度下，在设置在基板处理室内的基板上形成包含氮和III族元素的非晶缓冲层。室内的温度增加到非晶缓冲层在衬底上聚结成微晶的第二温度。将基底暴露于腐蚀剂以破坏至少一些微晶。在第三温度下使用在作为晶种暴露于腐蚀剂之后残留的微晶，在衬底上形成结晶氮化物层。第三温度大于第一温度。结晶氮化物层还包括氮和III族元素。

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