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    • 63. 发明申请
    • METHODS FOR EFFICIENT ORGANIZATION OF VEHICLE PEER GROUPS AND EFFICIENT V2R COMMUNICATIONS
    • 有效组织车辆对等组合和有效的V2R通信的方法
    • US20090285197A1
    • 2009-11-19
    • US12120330
    • 2008-05-14
    • Wai ChenTaek Jin KwonJohn LeeRyokichi OnishiToshiro Hikita
    • Wai ChenTaek Jin KwonJohn LeeRyokichi OnishiToshiro Hikita
    • H04L12/28
    • H04W40/30H04L45/00H04L45/20H04L45/48H04W40/246
    • The present invention provides methods for efficient control message distribution in a VANET. Efficient flooding mechanisms are provided to fulfill the objective of flooding (delivering a message to every connected node) with a limited number of re-broadcasting by selected key nodes. A suppression-based efficient flooding mechanism utilizes a Light Suppression (LS) technique to reduce the number of flooding relays by giving up the broadcasting of a flooding message when a node observes downstream relay of the same flooding message. Additionally, a relay-node based efficient flooding mechanism selects Relay Nodes (RN) to form an efficient flooding tree for control message delivery. RNs are nodes that relay at least one control message, for instance a Membership Report (MR) to the upstream node in “k” previous control message cycles The upstream node may be the group header (GH) for the LPG.
    • 本发明提供了用于在VANET中有效控制消息分发的方法。 提供了有效的洪泛机制,以通过所选择的关键节点进行有限数量的重新播放来实现洪水(向每个连接的节点传递消息)的目标。 基于抑制的有效洪泛机制利用光抑制(LS)技术通过在节点观察相同洪泛信息的下游中继时放弃广播消息来减少洪泛中继的数量。 另外,基于中继节点的有效洪泛机制选择中继节点(RN)以形成用于控制消息传递的有效洪泛树。 RN是在“k”个先前的控制消息周期中将至少一个控制消息(例如,成员资格报告(MR))中继到上游节点的节点。 上游节点可以是LPG的组头(GH)。
    • 67. 发明申请
    • TRANSFER OF FINELY GROUND WEIGHT MATERIAL
    • 精密地面重量材料的转移
    • US20080107513A1
    • 2008-05-08
    • US11932426
    • 2007-10-31
    • G. Wray CurtisJohn LeeSteve YoungWayne Matlock
    • G. Wray CurtisJohn LeeSteve YoungWayne Matlock
    • B65G53/06
    • E21B21/01
    • A method for transferring a finely ground weight material for use in drilling fluids including providing the finely ground weight material to a pneumatic transfer vessel and supplying an air flow to the finely ground weight material in the pneumatic transfer vessel. Furthermore, transferring the finely ground weight material from the pneumatic transfer vessel to a storage vessel. Additionally, a method for transferring a finely ground weight material for use in drilling fluids including modifying a particle distribution of the finely ground weight material and sealing the finely ground weight material in a pneumatic transfer vessel. Further, supplying an air flow to the finely ground weight material in the pneumatic transfer vessel and transferring the finely ground weight material from the pneumatic transfer vessel to a storage vessel.
    • 一种用于转移用于钻井液的精细研磨的重量材料的方法,包括将精细研磨的重质材料提供给气动转移容器,并将空气流供应到气动转移容器中的细磨重的材料。 此外,将精细研磨的重物料从气动转移容器转移到储存容器。 另外,用于转移用于钻井流体的精细研磨的重量材料的方法,包括改变细磨重物料的颗粒分布并将精细研磨的重量材料密封在气动转移容器中。 此外,将空气流供应到气动转移容器中的精细研磨的重物质,并将精细研磨的重物质从气动转移容器传送到储存容器。
    • 68. 发明授权
    • Field effect transistor fabrication methods, field emission device fabrication methods, and field emission device operational methods
    • 场效应晶体管制造方法,场发射器件制造方法和场致发射器件的操作方法
    • US07329552B2
    • 2008-02-12
    • US10072415
    • 2002-02-05
    • Ji Ung LeeJohn LeeBenham Moradi
    • Ji Ung LeeJohn LeeBenham Moradi
    • H01L21/00
    • H01L29/78618H01J9/025H01J2201/319
    • The present invention includes field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors. According to one embodiment, a field effect transistor includes a semiconductive layer configured to form a channel region; a pair of spaced conductively doped semiconductive regions in electrical connection with the channel region of the semiconductive layer; a gate intermediate the semiconductive regions; and a gate dielectric layer intermediate the semiconductive layer and the gate, the gate dielectric layer being configured to align the gate with the channel region of the semiconductive layer. In one aspect, chemical-mechanical polishing self-aligns the gate with the channel region. According to another aspect, a field emission device includes a transistor configured to control the emission of electrons from an emitter.
    • 本发明包括场效应晶体管,场发射装置,薄膜​​晶体管和形成场效应晶体管的方法。 根据一个实施例,场效应晶体管包括被配置为形成沟道区的半导体层; 一对间隔导电掺杂的半导体区域,与半导体层的沟道区域电连接; 半导体区域中间的栅极; 以及在所述半导体层和所述栅极之间的栅极电介质层,所述栅极电介质层被配置为使所述栅极与所述半导体层的沟道区域对准。 在一个方面,化学机械抛光使栅极与沟道区域自对准。 根据另一方面,场发射器件包括被配置为控制来自发射极的电子的发射的晶体管。