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61. 发明授权

US06211061B1 Dual damascene process for carbon-based low-K materials 有权
标题翻译：用于碳基低K材料的双镶嵌工艺
公开(公告)号：US06211061B1
公开(公告)日：2001-04-03
申请号：US09431536
申请日：1999-10-29
申请人： Chao-Cheng Chen , Ming-Huei Lui , Jen-Cheng Liu , Li-chih Chao , Chia-Shiung Tsai
发明人： Chao-Cheng Chen , Ming-Huei Lui , Jen-Cheng Liu , Li-chih Chao , Chia-Shiung Tsai
IPC分类号： H01L214763
CPC分类号： H01L21/76808
摘要： A method for forming a dual damascene structure in a carbon-based, low-K material. The process begins by providing a semiconductor structure having a first metal pattern thereover, wherein the first metal pattern has a first barrier layer thereon. An organic dielectric layer is formed on the first barrier layer, and a hard mask layer is formed on the dielectric layer. The hard mask layer and the dielectric layer are patterned to form a trench. A second barrier layer is formed over the hard mask layer and on the bottom and sidewalls of the trench. A barc layer is formed over the second barrier layer, thereby filling the trench. The barc layer, the second barrier layer, and the dielectric layer are patterned to form a via opening, preferably using a photoresist mask. The barc layer is patterned without faceting the edges of the via opening due to the second barrier layer. The barc layer and the etch mask are removed by the dielectric layer etch. The first barrier layer and the second barrier layer are removed. A third barrier layer is formed on the bottom and sidewalls of the trench, on the sidewalls of the via opening, and on the first metal pattern through the via opening. The trench and the via opening are filled with metal to form a damascene structure.
摘要翻译：一种在碳基低K材料中形成双镶嵌结构的方法。该过程开始于提供其上具有第一金属图案的半导体结构，其中第一金属图案在其上具有第一阻挡层。在第一阻挡层上形成有机电介质层，在电介质层上形成硬掩模层。图案化硬掩模层和电介质层以形成沟槽。第二阻挡层形成在硬掩模层之上以及沟槽的底部和侧壁上。在第二阻挡层上形成棒状层，由此填充沟槽。将棒状层，第二阻挡层和电介质层图案化以形成通孔，优选使用光致抗蚀剂掩模。由于第二阻挡层，棒状层被图案化而不使通孔开口的边缘刻划。通过电介质层蚀刻去除棒状层和蚀刻掩模。去除第一阻挡层和第二阻挡层。第三阻挡层形成在沟槽的底部和侧壁上，通孔开口的侧壁上，通过通孔开口形成在第一金属图案上。沟槽和通孔开口用金属填充以形成镶嵌结构。

62. 发明授权

US09455288B2 Image sensor structure to reduce cross-talk and improve quantum efficiency 有权
标题翻译：图像传感器结构，减少串扰，提高量子效率
公开(公告)号：US09455288B2
公开(公告)日：2016-09-27
申请号：US13476785
申请日：2012-05-21
申请人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Jeng-Shyan Lin , Wen-De Wang
发明人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Jeng-Shyan Lin , Wen-De Wang
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464
摘要： A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a cavity vertically aligned with the pixel region, and a color filter material disposed in the cavity between the walls of the grid.
摘要翻译：半导体器件包括：衬底，其包括并入有光电二极管的像素区域，设置在衬底上的栅格，并且具有限定与像素区域垂直对准的空腔的壁;以及布置在栅格壁之间的空腔中的滤色器材料。

63. 发明授权

US09406711B2 Apparatus and method for backside illuminated image sensors 有权
标题翻译：背面照明图像传感器的装置和方法
公开(公告)号：US09406711B2
公开(公告)日：2016-08-02
申请号：US13524757
申请日：2012-06-15
申请人： Szu-Ying Chen , Tzu-Jui Wang , Jen-Cheng Liu , Dun-Nian Yaung , Ping-Yin Liu , Lan-Lin Chao
发明人： Szu-Ying Chen , Tzu-Jui Wang , Jen-Cheng Liu , Dun-Nian Yaung , Ping-Yin Liu , Lan-Lin Chao
IPC分类号： H01L31/00 , H01L27/146
CPC分类号： H01L27/14634 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/1469
摘要： A backside illuminated image sensor comprises a photodiode and a first transistor located in a first substrate, wherein the first transistor is electrically coupled to the photodiode. The backside illuminated image sensor further comprises a plurality of logic circuits formed in a second substrate, wherein the second substrate is stacked on the first substrate and the logic circuit are coupled to the first transistor through a plurality of bonding pads.
摘要翻译：背面照明图像传感器包括光电二极管和位于第一衬底中的第一晶体管，其中第一晶体管电耦合到光电二极管。背面照明图像传感器还包括形成在第二基板中的多个逻辑电路，其中第二基板堆叠在第一基板上，并且逻辑电路通过多个接合焊盘耦合到第一晶体管。

64. 发明授权

US09379093B2 Method and apparatus for image sensor packaging 有权
公开(公告)号：US09379093B2
公开(公告)日：2016-06-28
申请号：US13457637
申请日：2012-04-27
申请人： Szu-Ying Chen , Ping-Yin Liu , Calvin Yi-Ping Chao , Tzu-Jui Wang , Jen-Cheng Liu , Dun-Nian Yaung , Lan-Lin Chao
发明人： Szu-Ying Chen , Ping-Yin Liu , Calvin Yi-Ping Chao , Tzu-Jui Wang , Jen-Cheng Liu , Dun-Nian Yaung , Lan-Lin Chao
IPC分类号： H01L27/00 , H01L25/16 , H01L27/146
摘要： Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a sensor device with an application specific integrated circuit (ASIC) are disclosed. According to an embodiment, a sensor device may be bonded together face-to-face with an ASIC without using a carrier wafer, where corresponding bond pads of the sensor are aligned with bond pads of the ASIC and bonded together, in a one-to-one fashion. A column of pixels of the sensor may share a bond bad connected by a shared inter-metal line. The bond pads may be of different sizes and configured in different rows to be disjoint from each other. Additional dummy pads may be added to increase the bonding between the sensor and the ASIC.

65. 发明授权

US09263272B2 Gate electrodes with notches and methods for forming the same 有权
标题翻译：具有凹口的栅电极及其形成方法
公开(公告)号：US09263272B2
公开(公告)日：2016-02-16
申请号：US13474512
申请日：2012-05-17
申请人： Min-Feng Kao , Szu-Ying Chen , Dun-Nian Yaung , Jen-Cheng Liu , Tzu-Hsuan Hsu , Feng-Chi Hung
发明人： Min-Feng Kao , Szu-Ying Chen , Dun-Nian Yaung , Jen-Cheng Liu , Tzu-Hsuan Hsu , Feng-Chi Hung
IPC分类号： H01L29/02 , H01L21/265 , H01L21/28 , H01L29/423 , H01L23/544 , H01L27/146 , H01L21/762 , H01L29/66 , H01L29/78
CPC分类号： H01L21/2652 , H01L21/28114 , H01L21/76229 , H01L23/544 , H01L27/14609 , H01L27/1464 , H01L29/42376 , H01L29/665 , H01L29/6659 , H01L29/7833 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A device includes a semiconductor substrate, and a Device Isolation (DI) region extending from a top surface of the semiconductor substrate into the semiconductor substrate. A gate dielectric is disposed over an active region of the semiconductor substrate, wherein the gate dielectric extends over the DI region. A gate electrode is disposed over the gate dielectric, wherein a notch of the gate electrode overlaps a portion of the DI region.
摘要翻译：一种器件包括半导体衬底和从半导体衬底的顶表面延伸到半导体衬底中的器件隔离（DI）区域。栅极电介质设置在半导体衬底的有源区上，其中栅极电介质延伸超过DI区域。栅电极设置在栅极电介质上，其中栅电极的凹口与DI区的一部分重叠。

66. 发明授权

US09224770B2 Image sensor device and method 有权
标题翻译：图像传感器装置及方法
公开(公告)号：US09224770B2
公开(公告)日：2015-12-29
申请号：US13457301
申请日：2012-04-26
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Shuang-Ji Tsai
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Shuang-Ji Tsai
IPC分类号： H01L31/0203 , H01L27/146
CPC分类号： H01L27/14685 , H01L27/14609 , H01L27/14621 , H01L27/14629 , H01L27/1464 , H01L27/14689
摘要： A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk.
摘要翻译：提供了一种用于减少感光二极管之间串扰的系统和方法。在一个实施例中，在第一感光二极管上形成第一滤色器，并且在第二感光二极管上形成第二滤色器，并且在第一滤色器和第二滤色器之间形成间隙。间隙将用于反射否则将从第一滤色器过渡到第二滤色器的光，从而减少第一光敏二极管和第二感光二极管之间的串扰。也可以在第一感光二极管和第二感光二极管之间形成反射栅格，以帮助反射并进一步减少串扰量。

67. 发明授权

US08987855B2 Pad structures formed in double openings in dielectric layers 有权
公开(公告)号：US08987855B2
公开(公告)日：2015-03-24
申请号：US13198057
申请日：2011-08-04
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Shuang-Ji Tsai , Yueh-Chiou Lin
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Shuang-Ji Tsai , Yueh-Chiou Lin
IPC分类号： H01L27/146 , H01L31/18 , H01L31/02
CPC分类号： H01L27/14687 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： An image sensor device includes a semiconductor substrate having a front side and a backside. A first dielectric layer is on the front side of the semiconductor substrate. A metal pad is in the first dielectric layer. A second dielectric layer is over the first dielectric layer and on the front side of the semiconductor substrate. An opening penetrates through the semiconductor substrate from the backside of the semiconductor substrate, wherein the opening includes a first portion extending to expose a portion of the metal pad and a second portion extending to expose a portion of the second dielectric layer. A metal layer is formed in the first portion and the second portion of the opening.

68. 发明申请

US20140061737A1 Isolation for Semiconductor Devices 有权
标题翻译：半导体器件隔离
公开(公告)号：US20140061737A1
公开(公告)日：2014-03-06
申请号：US13598275
申请日：2012-08-29
申请人： Wen-I Hsu , Min-Feng Kao , Jen-Cheng Liu , Dun-Nian Yaung , Tzu-Hsuan Hsu , Wen-De Wang
发明人： Wen-I Hsu , Min-Feng Kao , Jen-Cheng Liu , Dun-Nian Yaung , Tzu-Hsuan Hsu , Wen-De Wang
IPC分类号： H01L27/146 , H01L31/18 , H01L27/088
CPC分类号： H01L27/14689 , H01L21/761 , H01L21/76237 , H01L27/1463 , H01L27/14643 , H01L29/0649
摘要： A system and method for isolating semiconductor devices is provided. An embodiment comprises an isolation region that is laterally removed from source/drain regions of semiconductor devices and has a dielectric material extending over the isolation implant between the source/drain regions. The isolation region may be formed by forming an opening through a layer over the substrate, depositing a dielectric material along the sidewalls of the opening, implanting ions into the substrate after the deposition, and filling the opening with another dielectric material.
摘要翻译：提供一种用于隔离半导体器件的系统和方法。一个实施例包括从半导体器件的源极/漏极区域侧向移除的隔离区域，并且具有在源极/漏极区域之间的隔离注入物上延伸的介电材料。可以通过在衬底上形成通过层的开口形成隔离区域，沿着开口的侧壁沉积电介质材料，在沉积之后将离子注入到衬底中，并用另一种电介质材料填充该开口。

69. 发明申请

US20140042298A1 CMOS Image Sensor Chips with Stacked Scheme and Methods for Forming the Same 审中-公开
标题翻译：具有堆叠方案的CMOS图像传感器芯片及其形成方法
公开(公告)号：US20140042298A1
公开(公告)日：2014-02-13
申请号：US13571099
申请日：2012-08-09
申请人： Meng-Hsun Wan , Szu-Ying Chen , Dun-Nian Yaung , Jen-Cheng Liu
发明人： Meng-Hsun Wan , Szu-Ying Chen , Dun-Nian Yaung , Jen-Cheng Liu
IPC分类号： H01L27/146 , H01L31/18 , H01L27/148
CPC分类号： H01L27/14634 , H01L27/1464 , H01L27/1469
摘要： A device includes an image sensor chip having an image sensor therein. A read-out chip is underlying and bonded to the image sensor chip, wherein the read-out chip includes a logic device selected from the group consisting essentially of a reset transistor, a source follower, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit. A peripheral circuit chip is underlying and bonded to the read-out chip, wherein the peripheral circuit chip includes a logic circuit.
摘要翻译：一种装置包括其中具有图像传感器的图像传感器芯片。读出芯片是底层的并且结合到图像传感器芯片上，其中读出芯片包括从基本上由复位晶体管，源极跟随器，行选择器及其组合组成的组中选择的逻辑器件。逻辑器件和图像传感器彼此电耦合，并且是相同像素单元的部分。外围电路芯片在下面并与读出的芯片结合，其中外围电路芯片包括一个逻辑电路。

70. 发明授权

US08629523B2 Inserted reflective shield to improve quantum efficiency of image sensors 有权
标题翻译：插入反射屏蔽，提高图像传感器的量子效率
公开(公告)号：US08629523B2
公开(公告)日：2014-01-14
申请号：US12761736
申请日：2010-04-16
申请人： Yu-Hao Shih , Szu-Ying Chen , Hsing-Lung Chen , Jen-Cheng Liu , Dun-Nian Yaung , Volume Chien
发明人： Yu-Hao Shih , Szu-Ying Chen , Hsing-Lung Chen , Jen-Cheng Liu , Dun-Nian Yaung , Volume Chien
IPC分类号： H01L31/0232
CPC分类号： H01L27/14685 , H01L27/14629 , H01L27/1464 , H01L31/0232 , H01L31/02327 , H01L31/18
摘要： The structures of reflective shields and methods of making such structures described enable reflection of light that has not be absorbed by photodiodes in image sensor devices and increase quantum efficiency of the photodiodes. Such structures can be applied (or used) for any image sensors to improve image quality. Such structures are particular useful for image sensors with smaller pixel sizes and for long-wavelength light (or rays), whose absorption length (or depth) could be insufficient, especially for backside illumination (BSI) devices. The reflective shields could double, or more than double, the absorption depth for light passing through the image sensors and getting reflected back to the photodiodes. Concave-shaped reflective shields have the additional advantage of directing reflected light toward the image sensors.
摘要翻译：反射屏蔽的结构和制造这样的结构的方法使得能够反射未被图像传感器装置中的光电二极管吸收的光并提高光电二极管的量子效率。这种结构可以应用于（或用于）任何图像传感器，以提高图像质量。这种结构对于具有较小像素尺寸的图像传感器和对于其吸收长度（或深度）可能不足的长波长光（或光线）特别有用，尤其对于背面照明（BSI）装置。反射屏蔽可以使通过图像传感器的光的吸收深度增加一倍或两倍以上，并被反射回到光电二极管。凹形反射屏蔽具有将反射光引向图像传感器的额外优点。

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