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    • 62. 发明授权
    • Solid electrolyte capacitor and method for manufacturing the same
    • 固体电解电容器及其制造方法
    • US06580601B2
    • 2003-06-17
    • US10284658
    • 2002-10-30
    • Takahiro HamadaEmiko IgakiMasakazu Tanahashi
    • Takahiro HamadaEmiko IgakiMasakazu Tanahashi
    • H01G900
    • H01G9/15H01G9/0425H01G11/48H01G11/56H01L2224/32245H01L2924/181Y02E60/13Y10T29/417H01L2924/00012
    • A solid electrolyte capacitor includes an anode made of a valve metal on whose surface a dielectric oxide film layer is formed, a solid electrolyte layer formed on the dielectric oxide film, a cathode layer formed on the solid electrolyte layer, a cathode contact terminal electrically connected to the cathode layer, and an anode contact terminal electrically connected to the anode layer. The cathode layer includes a carbon layer containing carbon particles, and a conductive paste layer containing conductive metal particles and having numerous pores, formed in that order from the solid electrolyte layer side. The solid electrolyte capacitor further includes a conductive polymer layer formed through the numerous pores of the conductive paste layer and connecting the carbon particles of the carbon layer and the conductive metal particles of the conductive paste layer. Thus, the interface resistance between the carbon layer and the conductive paste layer is lowered, and a solid electrolyte capacitor with small equivalent series resistance can be provided.
    • 一种固体电解质电容器包括:由其表面形成有电介质氧化膜层的阀金属制成的阳极,形成在电介质氧化膜上的固体电解质层,形成在固体电解质层上的阴极层,电连接的阴极接触端子 与阳极层电连接的阳极接触端子。 阴极层包括含有碳颗粒的碳层和从固体电解质层侧依次形成含有导电金属颗粒并具有许多孔的导电浆料层。 固体电解质电容器还包括通过导电膏层的多个孔形成并连接碳层​​的碳颗粒和导电糊层的导电金属颗粒的导电聚合物层。 因此,碳层和导电糊层之间的界面电阻降低,并且可以提供具有小的等效串联电阻的固体电解电容器。
    • 63. 发明授权
    • Method and apparatus for detecting synchronization shift between original image and reproduced image of video signal
    • 用于检测原始图像与视频信号的再现图像之间的同步偏移的方法和装置
    • US06489988B1
    • 2002-12-03
    • US09012858
    • 1998-01-23
    • Takahiro HamadaSatoshi MiyajiShuichi Matsumoto
    • Takahiro HamadaSatoshi MiyajiShuichi Matsumoto
    • H04N1702
    • H04N17/06H04N17/004
    • This invention aims to provide a method and apparatus for detecting a synchronization shift in which the synchronization shift between an original image and a reproduced image can be accurately detected even if noises are generated by a video codec or the like. An original image sent out from an image source 1 has a sine wave for synchronization overwritten thereon in a frame memory. The image on which the sine wave has been overwritten is decoded in a codec and stored in another frame memory. The two images srored. in two frame memories are simultaneously started to be read out. From the image from the other frame memory, only the sine wave is extracted in a notch filter, subjected to an offset correction in an adder, and inputted to asynchronization shift detecting unit. The synchronization shift detecting unit uses the sine wave to detect line, frame and horizontal pixel shifts. Since a sine wave is used as a synchronization marker and only the sine wave is extracted in the notch filter, the synchronization shift can be accurately detected.
    • 本发明的目的在于提供一种用于检测同步偏移的方法和装置,其中即使通过视频编解码器等产生噪声也能够准确地检测原始图像和再现图像之间的同步偏移。 从图像源1发送的原始图像在帧存储器中具有用于同步的正弦波。 已经覆盖了正弦波的图像以编码解码器解码并存储在另一个帧存储器中。 这两个图像被扫描。 同时开始在两帧存储器中读出。 从另一个帧存储器的图像中,只有在陷波滤波器中提取正弦波,在加法器中进行偏移校正,并输入到异步移位检测单元。 同步移位检测单元使用正弦波来检测线,帧和水平像素移位。 由于使用正弦波作为同步标记,并且仅在陷波滤波器中提取正弦波,因此可以准确地检测同步偏移。
    • 68. 发明授权
    • Light-emitting diode
    • 发光二极管
    • US08193548B2
    • 2012-06-05
    • US13284294
    • 2011-10-28
    • Hiroyuki TanakaNobuaki NagaoTakahiro HamadaEiji Fujii
    • Hiroyuki TanakaNobuaki NagaoTakahiro HamadaEiji Fujii
    • H01L33/00
    • H01L33/42H01L2933/0083H01L2933/0091
    • An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.
    • 发光二极管包括堆叠在其中的n型氮化物半导体层,多量子阱层,p型氮化物半导体层,窗口电极层,p侧电极和n侧电极 订购。 n侧电极与n型氮化物半导体层电连接。 窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触。 发光二极管还包括形成在n型单晶ZnO透明膜上的多个单晶ZnO棒。 单晶ZnO棒的各自的下部具有从单晶n型ZnO透明膜朝向n型氮化物半导体层而锐化的倒锥形。