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61. 发明授权

US09110090B2 Piezoresistive micromechanical sensor component and corresponding measuring method 有权
标题翻译：压电微机械传感器元件及相应的测量方法
公开(公告)号：US09110090B2
公开(公告)日：2015-08-18
申请号：US13635581
申请日：2011-01-19
申请人： Reinhard Neul , Christian Rettig , Achim Trautmann , Daniel Christoph Meisel , Alexander Buhmann , Manuel Engesser , Ando Feyh
发明人： Reinhard Neul , Christian Rettig , Achim Trautmann , Daniel Christoph Meisel , Alexander Buhmann , Manuel Engesser , Ando Feyh
IPC分类号： G01P15/12 , G01P15/09 , G01P15/08
CPC分类号： G01P15/09 , G01P15/0802 , G01P15/12 , G01P15/123
摘要： A piezoresistive micromechanical sensor component includes a substrate, a seismic mass, at least one piezoresistive bar, and a measuring device. The seismic mass is suspended from the substrate such that it can be deflected. The at least one piezoresistive bar is provided between the substrate and the seismic mass and is subject to a change in resistance when the seismic mass is deflected. The at least one piezoresistive bar has a lateral and/or upper and/or lower conductor track which at least partially covers the piezoresistive bar and extends into the region of the substrate. The measuring device is electrically connected to the substrate and to the conductor track and is configured to measure the change in resistance over a circuit path which runs from the substrate through the piezoresistive bar and from the piezoresistive bar through the lateral and/or upper and/or lower conductor track.
摘要翻译：压阻微机电传感器部件包括基板，抗震块，至少一个压阻棒和测量装置。地震质量从基板悬挂使其能够偏转。所述至少一个压阻棒设置在所述基底和所述抗震块之间，并且当所述地震质量被偏转时，所述至少一个压阻棒经受阻力的变化。至少一个压阻棒具有至少部分地覆盖压阻棒并延伸到衬底的区域中的横向和/或上部和/或下部导体轨道。测量装置电连接到基板和导体轨道，并且被配置成测量电路的电阻变化，该电阻通过基板通过压阻棒和从压阻棒通过横向和/或上部和/ 或下导体轨道。

62. 发明授权

US09030198B2 Magnetic field sensor and method for producing a magnetic field sensor 有权
标题翻译：磁场传感器及磁场传感器的制造方法
公开(公告)号：US09030198B2
公开(公告)日：2015-05-12
申请号：US13321759
申请日：2010-07-26
申请人： Frank Schatz , Tino Fuchs , Ando Feyh
发明人： Frank Schatz , Tino Fuchs , Ando Feyh
IPC分类号： G01N27/72 , G01R33/04 , H01F27/28
CPC分类号： G01R33/04 , H01F27/2804 , Y10T29/49073
摘要： A magnetometer is described, having a substrate and a magnetic core, the substrate having an excitation coil for generating a magnetic flux in the magnetic core; and the excitation coil having a coil cross section, which is aligned generally perpendicular to a main plane of extension of the substrate. The magnetic core is situated outside the coil cross section.
摘要翻译：描述了具有基板和磁芯的磁力计，所述基板具有用于在磁芯中产生磁通的励磁线圈; 并且所述激励线圈具有线圈横截面，所述线圈横截面大致垂直于所述衬底的主平面延伸。磁芯位于线圈横截面外。

63. 发明申请

US20130181575A1 Piezoelectric Based MEMS Structure 有权
标题翻译：基于压电的MEMS结构
公开(公告)号：US20130181575A1
公开(公告)日：2013-07-18
申请号：US13349009
申请日：2012-01-12
申请人： Po-Jui Chen , Ando Feyh , Gary O'Brien
发明人： Po-Jui Chen , Ando Feyh , Gary O'Brien
IPC分类号： H01L41/083 , H01L41/22 , H01L41/02
CPC分类号： H01L41/096 , G01L1/16 , H01L41/047 , H01L41/094 , H01L41/1132 , Y10T29/42
摘要： In one embodiment, a method of deforming a MEMS structure includes providing a base layer, providing a first piezoelectric slab operably connected to a surface of the base layer, determining a desired deformation of the base layer, applying a first potential to a first electrode operably connected to the first piezoelectric slab, applying a second potential to a second electrode operably connected to the first piezoelectric slab, and deforming the base layer with the first piezoelectric slab using the applied first potential and the applied second potential based upon the determined desired deformation.
摘要翻译：在一个实施例中，使MEMS结构变形的方法包括提供基底层，提供可操作地连接到基底层的表面的第一压电片，确定基底层的期望变形，将第一电位可操作地施加到第一电极连接到所述第一压电板，将第二电位施加到可操作地连接到所述第一压电板的第二电极，以及基于所确定的期望变形，使用所施加的第一电位和所施加的第二电位，使所述基层与所述第一压电板发生变形。

64. 发明授权

US08377315B2 Method for manufacturing porous microstructures, porous microstructures manufactured according to this method, and the use thereof 失效
标题翻译：用于制造多孔微结构的方法，根据该方法制造的多孔微结构及其用途
公开(公告)号：US08377315B2
公开(公告)日：2013-02-19
申请号：US12810973
申请日：2008-11-19
申请人： Dick Scholten , Tjalf Pirk , Michael Stumber , Franz Laermer , Ralf Reichenbach , Ando Feyh
发明人： Dick Scholten , Tjalf Pirk , Michael Stumber , Franz Laermer , Ralf Reichenbach , Ando Feyh
IPC分类号： C23F1/00
CPC分类号： A61K9/0019 , A61B5/02755 , A61K9/0024 , A61K9/2009 , A61K31/337 , A61M37/0015 , A61M2037/0023 , A61M2037/0053 , B81B2201/055 , B81C1/00126 , B81C2201/0115 , Y10T428/249978
摘要： A method for manufacturing porous microstructures in a silicon semiconductor substrate, porous microstructures manufactured according to this method, and the use thereof.
摘要翻译：一种用于制造硅半导体衬底中的多孔微结构的方法，根据该方法制造的多孔微结构及其用途。

65. 发明申请

US20130032904A1 Coated Capacitive Sensor 审中-公开
标题翻译：涂层电容传感器
公开(公告)号：US20130032904A1
公开(公告)日：2013-02-07
申请号：US13197981
申请日：2011-08-04
申请人： Ando Feyh , Johannes Classen
发明人： Ando Feyh , Johannes Classen
IPC分类号： H01L29/84 , H01L21/00
CPC分类号： B81B3/0086 , B81B3/0008 , B81C2201/0169 , B81C2201/017 , B81C2201/0176
摘要： In one embodiment, a method of forming a MEMS device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a silicon based working portion on the sacrificial layer, releasing the silicon based working portion from the sacrificial layer such that the working portion includes at least one exposed outer surface, forming a first layer of silicide forming metal on the at least one exposed outer surface of the silicon based working portion, and forming a first silicide layer with the first layer of silicide forming metal.
摘要翻译：在一个实施例中，形成MEMS器件的方法包括提供衬底，在衬底层上形成牺牲层，在牺牲层上形成硅基工作部分，从牺牲层释放硅基工作部分，使得工作部分包括至少一个暴露的外表面，在硅基工作部分的至少一个暴露的外表面上形成第一层硅化物形成金属，以及形成具有第一层硅化物形成金属的第一硅化物层。

66. 发明授权

US08354033B2 Method for producing porous microneedles and their use 失效
标题翻译：生产多孔微针的方法及其应用
公开(公告)号：US08354033B2
公开(公告)日：2013-01-15
申请号：US12227509
申请日：2007-04-27
申请人： Dick Scholten , Julia Cassemeyer , Michael Stumber , Franz Laermer , Ando Feyh , Christian Maeurer
发明人： Dick Scholten , Julia Cassemeyer , Michael Stumber , Franz Laermer , Ando Feyh , Christian Maeurer
IPC分类号： B44C1/22 , C25F3/00
CPC分类号： B81C1/00119 , A61M37/0015 , A61M2037/003 , A61M2037/0038 , A61M2037/0046 , A61M2037/0053 , B81C2201/0112 , B81C2201/0115
摘要： A method for producing porous microneedles (10) situated in an array on a silicon substrate includes: providing a silicon substrate, applying a first etching mask, patterning microneedles using a DRIE process (“deep reactive ion etching”), removing the first etching mask, at least partially porosifying the Si substrate, the porosification beginning on the front side of the Si substrate and a porous reservoir being formed.
摘要翻译：一种制造位于硅衬底上的多孔微针（10）的方法，包括：提供硅衬底，施加第一蚀刻掩模，使用DRIE工艺（深反应离子蚀刻）图案化微针，去除第一蚀刻掩模，至少部分地使Si衬底开孔，从Si衬底的正面开始的开孔化和形成的多孔容器。

67. 发明申请

US20120132925A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE, AND A CORRESPONDING SEMICONDUCTOR STRUCTURE 审中-公开
标题翻译：制造半导体结构的方法和相应的半导体结构
公开(公告)号：US20120132925A1
公开(公告)日：2012-05-31
申请号：US13366067
申请日：2012-02-03
申请人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
发明人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
IPC分类号： H01L29/24
CPC分类号： H01L21/228 , H01L21/02378 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/02667 , H01L21/223 , H01L21/225 , H01L21/324
摘要： A method for manufacturing a semiconductor structure is provided which includes the following steps: a crystalline semiconductor substrate (1) is supplied; a porous region (10) is provided adjacent to a surface (OF) of the semiconductor substrate (1); a dopant (12) is introduced into the porous region (10) from the surface (OF); and the porous region (10) is thermally recrystallized into a crystalline doping region (10′) of the semiconductor substrate (1) whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate (1). A corresponding semiconductor structure is likewise provided.
摘要翻译：提供一种制造半导体结构的方法，包括以下步骤：提供晶体半导体衬底（1）; 邻近半导体衬底（1）的表面（OF）设置多孔区域（10）; 从表面（OF）将掺杂剂（12）引入多孔区域（10）中; 并且多孔区域（10）被热再结晶成半导体衬底（1）的结晶掺杂区域（10'），其掺杂类型和/或掺杂浓度和/或掺杂分布与半导体衬底基板（1）。同样提供相应的半导体结构。

68. 发明申请

US20120129291A1 METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT 有权
标题翻译：生产微生物组分的方法
公开(公告)号：US20120129291A1
公开(公告)日：2012-05-24
申请号：US13296923
申请日：2011-11-15
申请人： Heiko Stahl , Christina Leinenbach , Axel Franke , Jochen Reinmuth , Ando Feyh , Christian Rettig
发明人： Heiko Stahl , Christina Leinenbach , Axel Franke , Jochen Reinmuth , Ando Feyh , Christian Rettig
IPC分类号： H01L21/00
CPC分类号： B81C1/00777
摘要： A method for producing a micromechanical component is described. The method includes providing a substrate having a layer system including an insulating material situated on the substrate, a conductive layer section and a protective layer structure connected to the conductive layer section, which borders a section of the insulating material. The method furthermore includes carrying out an isotropic etching process for removing a part of the insulating material, the conductive layer section and the protective layer structure preventing the removal of the bordered section of the insulating material; and a structural element being developed, which includes the conductive layer section, the protective layer structure and the bordered section of the insulating material.
摘要翻译：对微机械部件的制造方法进行说明。该方法包括提供具有包括位于基板上的绝缘材料的层系统的基板，与导电层部分连接的导电层部分和保护层结构，其与绝缘材料的一部分相接触。该方法还包括进行用于去除绝缘材料的一部分，导电层部分和保护层结构的各向同性蚀刻工艺，以防止去除绝缘材料的边界部分; 以及正在开发的结构元件，其包括导电层部分，保护层结构和绝缘材料的边界部分。

69. 发明申请

US20110281102A1 METHOD FOR MANUFACTURING POROUS MICROSTRUCTURES, POROUS MICROSTRUCTURES MANUFACTURED ACCORDING TO THIS METHOD, AND THE USE THEREOF 失效
标题翻译：用于制造多孔微结构的方法，根据该方法制造的多孔微结构及其使用
公开(公告)号：US20110281102A1
公开(公告)日：2011-11-17
申请号：US12810973
申请日：2008-11-19
申请人： Dick Scholten , Tjalf Pirk , Michael Stumber , Franz Laermer , Ralf Reichenbach , Ando Feyh
发明人： Dick Scholten , Tjalf Pirk , Michael Stumber , Franz Laermer , Ralf Reichenbach , Ando Feyh
IPC分类号： B32B3/26 , C23F1/04
CPC分类号： A61K9/0019 , A61B5/02755 , A61K9/0024 , A61K9/2009 , A61K31/337 , A61M37/0015 , A61M2037/0023 , A61M2037/0053 , B81B2201/055 , B81C1/00126 , B81C2201/0115 , Y10T428/249978
摘要： A method for manufacturing porous microstructures in a silicon semiconductor substrate, porous microstructures manufactured according to this method, and the use thereof.
摘要翻译：一种用于制造硅半导体衬底中的多孔微结构的方法，根据该方法制造的多孔微结构及其用途。

70. 发明授权

US07923794B2 Micromechanical component having thin-layer encapsulation and production method 有权
标题翻译：微机械部件具有薄层封装和制造方法
公开(公告)号：US07923794B2
公开(公告)日：2011-04-12
申请号：US12152332
申请日：2008-05-13
申请人： Ando Feyh
发明人： Ando Feyh
IPC分类号： H01L29/82
CPC分类号： B81C1/00293 , B81C2203/0136 , B81C2203/0145
摘要： A micromechanical component having a substrate and having a thin-layer, as well as having a cavity which is bounded by the substrate and the thin-layer, at least one gas having an internal pressure being enclosed in the cavity. The gas phase has a non-atmospheric composition. A method for producing a micromechanical component having a substrate and having a thin-layer encapsulation, as well as having a cavity which is bounded by the substrate and the thin-layer encapsulation. The method has the steps of positioning a polymer in a cavity, closing the cavity and generating a gas phase of non-atmospheric composition in the cavity by decomposing at least a part of the polymer. An internal pressure is generated, which may be higher than the process pressure when the cavity is closed.
摘要翻译：一种具有衬底并具有薄层的微机械部件，以及具有由衬底和薄层界定的空腔，至少一个具有封闭在腔中的内部压力的气体。气相具有非大气成分。一种用于制造具有衬底并具有薄层封装的微机械部件的方法，以及具有由衬底和薄层封装限定的空腔。该方法具有以下步骤：将聚合物定位在空腔中，通过分解至少一部分聚合物来封闭空腔并在空腔中产生非大气成分的气相。产生内部压力，其可能高于空腔关闭时的过程压力。

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