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    • 64. 发明申请
    • METHOD OF FORMING A NANO-STRUCTURE
    • 形成纳米结构的方法
    • US20130175177A1
    • 2013-07-11
    • US13822062
    • 2010-10-21
    • Peter MardilovichQingqiao WeiAnthony M. Fuller
    • Peter MardilovichQingqiao WeiAnthony M. Fuller
    • C25D5/02
    • C25D5/022B81B2203/0361B81C1/00031B81C2201/0114B82Y20/00B82Y30/00B82Y40/00C25D11/045C25D11/12C25D11/34
    • A method of forming a nano-structure (100′) involves forming a multi-layered structure (10) including an oxidizable material layer (14) established on a substrate (12), and another oxidizable material layer (16) established on the oxidizable material layer (14). The oxidizable material layer (14) is an oxidizable material having an expansion coefficient, during oxidation, that is more than 1. Anodizing the other oxidizable material layer (16) forms a porous anodic structure (16′), and anodizing the oxidizable material layer (14) forms a dense oxidized layer (14′) and nano-pillars (20) which grow through the porous anodic structure (16′) into pores (18) thereof. The porous structure (16′) is selectively removed to expose the nano-pillars (20). A surface (I) between the dense oxidized layer (14′) and a remaining portion of the oxidizable material layer (14) is anodized to consume a substantially cone-shaped portion (32) of the nano-pillars (20) to form cylindrical nano-pillars (20′).
    • 形成纳米结构(100')的方法包括形成包括建立在基板(12)上的可氧化材料层(14)的多层结构(10),以及建立在可氧化的材料层(16)上的另一可氧化材料层 材料层(14)。 可氧化材料层(14)是在氧化期间具有大于1的膨胀系数的可氧化材料。阳极氧化其它可氧化材料层(16)形成多孔阳极结构(16'),并阳极氧化可氧化材料层 (14)形成致密氧化层(14')和通过多孔阳极结构(16')生长成其孔隙(18)的纳米柱(20)。 选择性地去除多孔结构(16')以暴露纳米柱(20)。 密集氧化层(14')和可氧化材料层(14)的剩余部分之间的表面(I)被阳极氧化以消耗纳米柱(20)的大致锥形部分(32),以形成圆柱形 纳米柱(20')。