专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US07759756B2 Dual-pixel full color CMOS imager 有权
标题翻译：双像素全彩CMOS成像仪
公开(公告)号：US07759756B2
公开(公告)日：2010-07-20
申请号：US12025618
申请日：2008-02-04
申请人： Jong-Jan Lee , Sakae Wada , Sheng Teng Hsu
发明人： Jong-Jan Lee , Sakae Wada , Sheng Teng Hsu
IPC分类号： H01L31/00 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14647 , H01L27/14689
摘要： A dual-pixel full color complementary metal oxide semiconductor (CMOS) imager is provided, along with an associated fabrication process. Two stand-alone pixels are used for three-color detection. The first pixel is a single photodiode, and the second pixel has two photodiodes built in a stacked structure. The two photodiode stack includes an n doped substrate, a bottom photodiode, and a top photodiode. The bottom photodiode has a bottom p doped layer overlying the substrate and a bottom n doped layer cathode overlying the bottom p doped layer. The top photodiode has a top p doped layer overlying the bottom n doped layer and a top n doped layer cathode overlying the top p doped layer. The single photodiode includes the n doped substrate, a p doped layer overlying the substrate, and an n doped layer cathode overlying the p doped layer.
摘要翻译：提供了双像素全色互补金属氧化物半导体（CMOS）成像器，以及相关的制造工艺。两个独立像素用于三色检测。第一像素是单个光电二极管，第二像素具有以堆叠结构内置的两个光电二极管。两个光电二极管堆叠包括n掺杂衬底，底部光电二极管和顶部光电二极管。底部光电二极管具有覆盖衬底的底部p掺杂层和覆盖底部p掺杂层的底部n掺杂层阴极。顶部光电二极管具有覆盖底部n掺杂层的顶部p掺杂层和覆盖顶部p掺杂层的顶部n掺杂层阴极。单个光电二极管包括n掺杂衬底，覆盖衬底的p掺杂层和覆盖p掺杂层的n掺杂层阴极。

62. 发明授权

US07723729B2 Compound semiconductor-on-silicon wafer with a silicon nanowire buffer layer 有权
标题翻译：具有硅纳米线缓冲层的复合半导体硅片
公开(公告)号：US07723729B2
公开(公告)日：2010-05-25
申请号：US12036396
申请日：2008-02-25
申请人： Tingkai Li , Sheng Teng Hsu
发明人： Tingkai Li , Sheng Teng Hsu
IPC分类号： H01L31/0312 , H01L29/20 , H01L29/06
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02381 , H01L21/02433 , H01L21/02447 , H01L21/0245 , H01L21/02502 , H01L21/0254 , H01L21/02546 , H01L21/02639 , H01L21/0265 , H01L29/045 , H01L29/0673
摘要： A compound semiconductor-on-silicon (Si) wafer with a Si nanowire buffer layer is provided, along with a corresponding fabrication method. The method forms a Si substrate. An insulator layer is formed overlying the Si substrate, with Si nanowires having exposed tips. Compound semiconductor is selectively deposited on the Si nanowire tips. A lateral epitaxial overgrowth (LEO) process grows compound semiconductor from the compound semiconductor-coated Si nanowire tips, to form a compound semiconductor layer overlying the insulator. Typically, the insulator layer overlying the Si substrate is a thermally soft insulator (TSI), silicon dioxide, or SiXNY, where x≦3 and Y≦4. The compound semiconductor can be GaN, GaAs, GaAlN, or SiC. In one aspect, the Si nanowire tips are carbonized, and SiC is selectively deposited overlying the carbonized Si nanowire tips, prior to the selective deposition of compound semiconductor on the Si nanowire tips.
摘要翻译：提供了具有Si纳米线缓冲层的化合物半导体硅（Si）晶片以及相应的制造方法。该方法形成Si衬底。在Si衬底上形成绝缘体层，Si纳米线具有暴露的尖端。化合物半导体选择性沉积在Si纳米线尖端上。横向外延生长（LEO）工艺从化合物半导体涂覆的Si纳米线尖端生长化合物半导体，以形成覆盖绝缘体的化合物半导体层。通常，覆盖Si衬底的绝缘体层是热软绝缘体（TSI），二氧化硅或SiXNY，其中x和nlE; 3和Y和nlE; 4。化合物半导体可以是GaN，GaAs，GaAlN或SiC。在一个方面，将Si纳米线尖端碳化，并且在Si纳米线尖端上选择性沉积化合物半导体之前，选择性地将SiC沉积在碳化Si纳米线尖端上。

63. 发明授权

US07651883B2 High energy implant photodiode stack 失效
标题翻译：高能注入光电二极管叠层
公开(公告)号：US07651883B2
公开(公告)日：2010-01-26
申请号：US11801320
申请日：2007-05-09
申请人： Jong-Jan Lee , Douglas J. Tweet , Sheng Teng Hsu
发明人： Jong-Jan Lee , Douglas J. Tweet , Sheng Teng Hsu
IPC分类号： H01L21/00
CPC分类号： H01L27/14647 , H01L27/1463 , H01L27/14689
摘要： An array of fully isolated multi-junction complimentary metal-oxide-semiconductor (CMOS) filterless color imager cells is provided, with a corresponding fabrication process. The color imager cell array is formed from a bulk silicon (Si) substrate without an overlying epitaxial Si layer. A plurality of color imager cells are formed in the bulk Si substrate, where each color imager cell includes a photodiode set and a U-shaped well liner. The photodiode set includes first, second, and third photodiode formed as a stacked multi-junction structure, while the U-shaped well liner fully isolates the photodiode set from adjacent photodiode sets in the array. The U-shaped well liner includes a physically interfacing doped well liner bottom and first wall. The well liner bottom is interposed between the substrate and the photodiode set, and the first wall physically interfaces each doped layer of each photodiode in the photodiode set.
摘要翻译：提供了完全隔离的多结互补金属氧化物半导体（CMOS）无滤膜彩色成像器单元的阵列，具有相应的制造工艺。彩色成像器单元阵列由体硅（Si）衬底形成，而不具有上覆的外延Si层。在本体Si衬底中形成多个彩色成像器单元，其中每个彩色成像器单元包括光电二极管组和U形衬管。光电二极管组包括形成为堆叠多结结构的第一，第二和第三光电二极管，而U形阱衬套将光电二极管组与阵列中的相邻光电二极管组完全隔离。 U形井衬管包括物理接口掺杂的井筒底部和第一壁。阱衬底位于衬底和光电二极管组之间，并且第一壁物理地连接光电二极管组中每个光电二极管的每个掺杂层。

64. 发明授权

US07651880B2 Ge short wavelength infrared imager 有权
标题翻译： Ge短波长红外成像仪
公开(公告)号：US07651880B2
公开(公告)日：2010-01-26
申请号：US11592465
申请日：2006-11-04
申请人： Douglas J. Tweet , Jer-Shen Maa , Jong-Jan Lee , Sheng Teng Hsu
发明人： Douglas J. Tweet , Jer-Shen Maa , Jong-Jan Lee , Sheng Teng Hsu
IPC分类号： H01L25/00
CPC分类号： H01L31/1055 , H01L27/14643 , H01L27/14689
摘要： A germanium (Ge) short wavelength infrared (SWIR) imager and associated fabrication process are provided. The imager comprises a silicon (Si) substrate with doped wells. An array of pin diodes is formed in a relaxed Ge-containing film overlying the Si substrate, each pin diode having a flip-chip interface. There is a Ge/Si interface, and a doped Ge-containing buffer interposed between the Ge-containing film and the Ge/Si interface. An array of Si CMOS readout circuits is bonded to the flip-chip interfaces. Each readout circuit has a zero volt diode bias interface.
摘要翻译：提供锗（Ge）短波长红外（SWIR）成像器和相关制造工艺。该成像器包括具有掺杂阱的硅（Si）衬底。在位于Si衬底上的松弛的含Ge膜中形成一个pin二极管阵列，每个pin二极管具有倒装芯片接口。存在Ge / Si界面和插入含Ge膜和Ge / Si界面之间的含掺杂Ge的缓冲层。 Si CMOS读出电路阵列结合到倒装芯片接口。每个读出电路都具有零伏二极管偏置接口。

65. 发明申请

US20090173933A1 Thermal Sensor with a Silicon/Germanium Superlattice Structure 有权
标题翻译：具有硅/锗超晶格结构的热传感器
公开(公告)号：US20090173933A1
公开(公告)日：2009-07-09
申请号：US12236480
申请日：2008-09-23
申请人： Jer-Shen Maa , Jinke Tang , Jong-Jan Lee , Douglas J. Tweet , Sheng Teng Hsu
发明人： Jer-Shen Maa , Jinke Tang , Jong-Jan Lee , Douglas J. Tweet , Sheng Teng Hsu
IPC分类号： H01L29/15
CPC分类号： H01L31/035254 , B82Y20/00 , H01L27/14649 , H01L31/028 , H01L31/101 , H01L31/1804 , Y02P70/521
摘要： A silicon/germanium (SiGe) superlattice thermal sensor is provided with a corresponding fabrication method. The method forms an active CMOS device in a first Si substrate, and a SiGe superlattice structure on a second Si-on-insulator (SOI) substrate. The first substrate is bonded to the second substrate, forming a bonded substrate. An electrical connection is formed between the SiGe superlattice structure and the CMOS device, and a cavity is formed between the SiGe superlattice structure and the bonded substrate.
摘要翻译：硅/锗（SiGe）超晶格热传感器具有相应的制造方法。该方法在第一Si衬底中形成有源CMOS器件，并在第二绝缘体上（SOI）衬底上形成SiGe超晶格结构。第一基板与第二基板接合，形成接合基板。在SiGe超晶格结构和CMOS器件之间形成电连接，并且在SiGe超晶格结构和键合衬底之间形成空穴。

66. 发明申请

US20090024182A1 IrOx Nanostructure Electrode Neural Interface Optical Device 有权
标题翻译： IrOx纳米结构电极神经界面光学器件
公开(公告)号：US20090024182A1
公开(公告)日：2009-01-22
申请号：US12240501
申请日：2008-09-29
申请人： Fengyan Zhang , Sheng Teng Hsu
发明人： Fengyan Zhang , Sheng Teng Hsu
IPC分类号： A61N1/36
CPC分类号： C30B25/00 , A61N1/0543 , B82Y5/00 , B82Y10/00 , B82Y30/00 , C30B29/16 , C30B29/605 , Y10S977/811 , Y10S977/904 , Y10S977/932
摘要： An optical device with an iridium oxide (IrOx) electrode neural interface, and a corresponding fabrication method are provided. The method provides a substrate and forms a first conductive electrode overlying the substrate. A photovoltaic device having a first electrical interface is connected to the first electrode. A second electrical interface of the photovoltaic device is connected to a second conductive electrode formed overlying the photovoltaic device. An array of neural interface single-crystal IrOx nanostructures are formed overlying the second electrode, where x≦4. The IrOx nanostructures can be partially coated with an electrical insulator, such as SiO2, SiN, TiO2, or spin on glass (SOG), leaving the IrOx distal ends exposed. In one aspect, a buffer layer is formed overlying the second electrode surface, made from a material such as LiNbO3, LiTaO3, or SA, for the purpose of orienting the growth direction of the IrOx nanostructures.
摘要翻译：提供了具有氧化铱（IrOx）电极神经接口的光学器件及相应的制造方法。该方法提供了一个衬底并且形成了覆盖衬底的第一导电电极。具有第一电接口的光电器件连接到第一电极。光电器件的第二电接口连接到形成在光伏器件上的第二导电电极。形成了覆盖第二电极的神经界面单晶IrOx纳米结构阵列，其中x <= 4。 IrOx纳米结构可以部分地涂覆有电绝缘体，例如SiO 2，SiN，TiO 2或旋转玻璃（SOG），留下IrOx远端暴露。在一个方面，为了定向IrOx纳米结构的生长方向，形成了由诸如LiNbO 3，LiTaO 3或SA的材料制成的第二电极表面上的缓冲层。

67. 发明授权

US07470573B2 Method of making CMOS devices on strained silicon on glass 失效
标题翻译：在玻璃上的应变硅上制造CMOS器件的方法
公开(公告)号：US07470573B2
公开(公告)日：2008-12-30
申请号：US11060878
申请日：2005-02-18
申请人： Jong-Jan Lee , Jer-Shen Maa , Douglas J. Tweet , Yoshi Ono , Sheng Teng Hsu
发明人： Jong-Jan Lee , Jer-Shen Maa , Douglas J. Tweet , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L21/30 , H01L21/84
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1266 , H01L29/7842 , H01L29/78621
摘要： A method of making CMOS devices on strained silicon on glass includes preparing a glass substrate, including forming a strained silicon layer on the glass substrate; forming a silicon oxide layer by plasma oxidation of the strained silicon layer; depositing a layer of doped polysilicon on the silicon oxide layer; forming a polysilicon gate; implanting ions to form a LDD structure; depositing and forming a spacer dielectric on the gate structure; implanting and activation ions to form source and drain structures; depositing a layer of metal film; annealing the layer of metal film to form salicide on the source, drain and gate structures; removing any unreacted metal film; depositing a layer of interlayer dielectric; and forming contact holes and metallizing.
摘要翻译：在玻璃上的应变硅上制造CMOS器件的方法包括制备玻璃衬底，包括在玻璃衬底上形成应变硅层; 通过应变硅层的等离子体氧化形成氧化硅层; 在氧化硅层上沉积掺杂多晶硅层; 形成多晶硅栅极; 注入离子以形成LDD结构; 在栅极结构上沉积和形成间隔电介质; 植入和激活离子以形成源和漏结构; 沉积一层金属膜; 退火金属膜层，在源极，漏极和栅极结构上形成硅化物; 去除任何未反应的金属膜; 沉积层间电介质层; 并形成接触孔和金属化。

68. 发明申请

US20080171424A1 Epitaxial growth of GaN and SiC on silicon using nanowires and nanosize nucleus methodologies 审中-公开
标题翻译：使用纳米线和纳米尺度核方法在硅上外延生长GaN和SiC
公开(公告)号：US20080171424A1
公开(公告)日：2008-07-17
申请号：US11653802
申请日：2007-01-16
申请人： Tingkai Li , Jer-Shen Maa , Douglas J. Tweet , Wei-Wei Zhuang , Sheng Teng Hsu
发明人： Tingkai Li , Jer-Shen Maa , Douglas J. Tweet , Wei-Wei Zhuang , Sheng Teng Hsu
IPC分类号： H01L21/205
CPC分类号： H01L21/02513 , H01L21/02381 , H01L21/0245 , H01L21/02529 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/0265
摘要： A method of fabricating a continuous layer of a defect sensitive material on a silicon substrate includes preparing a silicon substrate; forming a nanostructure array directly on the silicon substrate; depositing a selective growth enhancing layer on the substrate; smoothing the selective growth enhancing layer; and growing a continuous layer of the defect sensitive material on the nanostructure array.
摘要翻译：在硅衬底上制造缺陷敏感材料的连续层的方法包括制备硅衬底; 在硅衬底上直接形成纳米结构阵列; 在衬底上沉积选择性生长增强层; 平滑选择性生长增强层; 并在纳米结构阵列上生长不连续的缺陷敏感材料层。

69. 发明申请

US20080164569A1 Terbium-doped, silicon-rich oxide electroluminescent devices and method of making the same 有权
标题翻译：铽掺杂，富硅氧化物电致发光器件及其制造方法
公开(公告)号：US20080164569A1
公开(公告)日：2008-07-10
申请号：US11582275
申请日：2006-10-16
申请人： Tingkai Li , Wei Gao , Yoshi Ono , Sheng Teng Hsu
发明人： Tingkai Li , Wei Gao , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L29/00
CPC分类号： H01L27/15 , H01L33/0004 , H01L33/343
摘要： A method of fabricating an electroluminescent device includes, on a prepared substrate, depositing a rare earth-doped silicon-rich layer on gate oxide layer as a light emitting layer; and annealing and oxidizing the structure to repair any damage caused to the rare earth-doped silicon-rich layer; and incorporating the electroluminescent device into a CMOS IC. An electroluminescent device fabricated according to the method of the invention includes a substrate, a rare earth-doped silicon-rich layer formed on the gate oxide layer for emitting a light of a pre-determined wavelength; a top electrode formed on the rare earth-doped silicon-rich layer; and associated CMOS IC structures fabricated thereabout.
摘要翻译：一种制造电致发光器件的方法包括：在制备的衬底上，在作为发光层的栅极氧化物层上沉积稀土掺杂的富硅层; 并对该结构进行退火和氧化以修复对稀土掺杂的富硅层造成的任何损伤; 并将电致发光器件并入CMOS IC。根据本发明的方法制造的电致发光器件包括：衬底，形成在栅极氧化物层上的用于发射预定波长的光的稀土掺杂富硅层; 在稀土掺杂的富硅层上形成的顶部电极; 并在其附近制造相关的CMOS IC结构。

70. 发明授权

US07384837B2 Method for isolating silicon germanium dislocation regions in strained-silicon CMOS applications 有权
标题翻译：在应变硅CMOS应用中分离硅锗位错区的方法
公开(公告)号：US07384837B2
公开(公告)日：2008-06-10
申请号：US11073185
申请日：2005-03-03
申请人： Sheng Teng Hsu , Jong-Jan Lee , Douglas J. Tweet , Jer-shen Maa
发明人： Sheng Teng Hsu , Jong-Jan Lee , Douglas J. Tweet , Jer-shen Maa
IPC分类号： H01L21/8238
CPC分类号： H01L29/1054 , H01L21/76224 , H01L21/823807 , H01L21/823842 , H01L21/823878 , H01L27/1203 , H01L29/78645
摘要： A dual gate strained-Si MOSFET with thin SiGe dislocation regions and a method for fabricating the same are provided. The method forms a first layer of relaxed SiGe overlying a substrate, having a thickness of less than 5000 Å; forms a second layer of relaxed SiGe overlying the substrate and adjacent to the first layer of SiGe, having a thickness of less than 5000 Å; forms a layer of strained-Si overlying the first and second SiGe layers; forms a shallow trench isolation region interposed between the first SiGe layer and the second SiGe layer; forms an p-well in the substrate and the overlying first layer of SiGe; forming forms a p-well in the substrate and the overlying second layer of SiGe; forms channel regions, in the strained-Si, and forms PMOS and NMOS transistor source and drain regions.
摘要翻译：提供具有薄SiGe位错区域的双栅应变Si MOSFET及其制造方法。该方法形成覆盖衬底的第一层松弛SiGe，厚度小于5000; 形成覆盖衬底并且邻近第一SiGe层的第二层松弛SiGe，其厚度小于5000; 形成层叠在第一和第二SiGe层上的应变层; 形成介于第一SiGe层和第二SiGe层之间的浅沟槽隔离区; 在衬底和SiGe的上覆第一层中形成p阱; 在衬底和SiGe的上覆第二层中形成p阱; 在应变Si中形成沟道区，并形成PMOS和NMOS晶体管的源极和漏极区。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式