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61. 发明申请

US20100148915A1 ELECTRICAL FUSE STRUCTURE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：电熔丝结构及其制造方法
公开(公告)号：US20100148915A1
公开(公告)日：2010-06-17
申请号：US12335510
申请日：2008-12-15
申请人： Chien-Li Kuo , Yung-Chang Lin , Kuei-Sheng Wu , San-Fu Lin
发明人： Chien-Li Kuo , Yung-Chang Lin , Kuei-Sheng Wu , San-Fu Lin
IPC分类号： H01H85/04
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： An electrical fuse structure is disclosed. The electrical fuse structure includes a fuse element disposed on surface of a semiconductor substrate, a cathode electrically connected to one end of the fuse element, and an anode electrically connected to another end of the fuse element. Specifically, a compressive stress layer is disposed on at least a portion of the fuse element.
摘要翻译：公开了电熔丝结构。电熔丝结构包括设置在半导体衬底的表面上的熔丝元件，与熔丝元件的一端电连接的阴极以及与熔丝元件的另一端电连接的阳极。具体而言，压电应力层设置在熔丝元件的至少一部分上。

62. 发明授权

US07671355B2 Method of fabricating a phase change memory and phase change memory 有权
标题翻译：制造相变存储器和相变存储器的方法
公开(公告)号：US07671355B2
公开(公告)日：2010-03-02
申请号：US12053623
申请日：2008-03-24
申请人： Chien-Li Kuo , Kuei-Sheng Wu , Yung-Chang Lin
发明人： Chien-Li Kuo , Kuei-Sheng Wu , Yung-Chang Lin
IPC分类号： H01L29/04
CPC分类号： H01L45/1233 , G11C13/0004 , G11C13/0069 , G11C2013/008 , H01L27/2436 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/1683 , Y10S438/90
摘要： The present invention relates to a phase change memory and a method of fabricating a phase change memory. The phase change memory includes a heater structure disposed on a phase change material pattern, wherein the heater structure is in a tapered shape with a bottom portion contacting the phase change material pattern. The fabrication of the phase change memory is compatible with the fabrication of logic devices, and accordingly an embedded phase change memory can be fabricated.
摘要翻译：本发明涉及相变存储器和相变存储器的制造方法。相变存储器包括设置在相变材料图案上的加热器结构，其中加热器结构呈锥形，底部接触相变材料图案。相变存储器的制造与逻辑器件的制造兼容，因此可以制造嵌入式相变存储器。

63. 发明申请

US20100012916A1 PHASE CHANGE MEMORY 有权
标题翻译：相变记忆
公开(公告)号：US20100012916A1
公开(公告)日：2010-01-21
申请号：US12174642
申请日：2008-07-17
申请人： Chien-Li Kuo , Kuei-Sheng Wu , Yung-Chang Lin
发明人： Chien-Li Kuo , Kuei-Sheng Wu , Yung-Chang Lin
IPC分类号： H01L27/105 , H01L21/8239
CPC分类号： H01L45/144 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L27/249 , H01L45/06 , H01L45/122 , H01L45/1226 , H01L45/126 , H01L45/1666
摘要： A phase change memory and the method for manufacturing the same are disclosed. The phase change memory includes a word line, a phase change element, a plurality of heating parts, and a plurality of bit lines. The phase change material layer is electrically connected to the word line and the heating parts. Each heating part is electrically connected to a respective bit line.
摘要翻译：公开了一种相变存储器及其制造方法。相变存储器包括字线，相变元件，多个加热部件和多个位线。相变材料层电连接到字线和加热部件。每个加热部件电连接到相应的位线。

64. 发明授权

US07465640B2 Dynamic random access memory cell and method for fabricating the same 有权
公开(公告)号：US07465640B2
公开(公告)日：2008-12-16
申请号：US11122655
申请日：2005-05-04
申请人： Yung-Chang Lin , Chia-Wen Liang , Chuan-Fu Wang
发明人： Yung-Chang Lin , Chia-Wen Liang , Chuan-Fu Wang
IPC分类号： H01L21/20
CPC分类号： H01L27/10832 , H01L27/10867 , H01L29/66181
摘要： A DRAM cell and a method for fabricating the same are provided. The method includes: forming a trench in a substrate; forming a first capacitor dielectric layer on the surface of the trench; forming a conducting layer inside the trench; forming a second capacitor dielectric layer on the surface of the substrate and on the conducting layer, wherein the substrate around the first and second capacitor dielectric layers serves as a bottom electrode; forming a protruding electrode on the substrate, the protruding electrode being on the substrate around the trench and covering a junction between the trench and the substrate; and electrically connecting the protruding electrode and the conducting layer, the conducting layer and the protruding electrode being an upper electrode.

65. 发明授权

US07344954B2 Method of manufacturing a capacitor deep trench and of etching a deep trench opening 有权
标题翻译：制造电容器深沟槽并蚀刻深沟槽开口的方法
公开(公告)号：US07344954B2
公开(公告)日：2008-03-18
申请号：US11306560
申请日：2006-01-03
申请人： Ta-Chuan Yeh , Ni-Min Chung , Kao-Su Huang , Yung-Chang Lin , Ruey-Chyr Lee , Chien-Kuo Wang
发明人： Ta-Chuan Yeh , Ni-Min Chung , Kao-Su Huang , Yung-Chang Lin , Ruey-Chyr Lee , Chien-Kuo Wang
IPC分类号： H01L21/20
CPC分类号： H01L27/1087 , H01L21/76205
摘要： A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
摘要翻译：提供了具有氧化物层，第一氮化硅 - 硅，STI和第二氮化硅 - 硅的衬底。蚀刻第二氮化硅 - 硅层上的图案多晶硅层以形成深沟槽开口。蚀刻图案多晶硅层也加深了深沟槽开口。然后，在深沟槽开口中填充导电层。

66. 发明授权

US07332392B2 Trench-capacitor DRAM device and manufacture method thereof 有权
标题翻译：沟槽电容器DRAM器件及其制造方法
公开(公告)号：US07332392B2
公开(公告)日：2008-02-19
申请号：US11279254
申请日：2006-04-11
申请人： Yung-Chang Lin , Sun-Chieh Chien , Chien-Li Kuo , Ruey-Chyr Lee
发明人： Yung-Chang Lin , Sun-Chieh Chien , Chien-Li Kuo , Ruey-Chyr Lee
IPC分类号： H01L21/8242
CPC分类号： H01L29/945 , H01L27/1087 , H01L29/66181
摘要： A trench capacitor structure includes a semiconductor substrate comprising thereon a STI structure. A capacitor deep trench is etched into the semiconductor substrate. Collar oxide layer is disposed on inner surface of the capacitor deep trench. A first doped polysilicon layer is disposed on the collar oxide layer and on the exposed bottom of the capacitor deep trench. A capacitor dielectric layer is formed on the first doped polysilicon layer. A second doped polysilicon layer is formed on the capacitor dielectric layer. A deep ion well is formed in the semiconductor substrate, wherein the deep ion well is electrically connected with the first doped polysilicon layer through the bottom of the capacitor deep trench. A passing gate insulation (PGI) layer is formed on the second doped polysilicon layer and on the STI structure.
摘要翻译：沟槽电容器结构包括其上包括STI结构的半导体衬底。电容器深沟槽被蚀刻到半导体衬底中。环状氧化物层设置在电容器深沟槽的内表面上。第一掺杂多晶硅层设置在轴环氧化物层和电容器深沟槽的暴露的底部上。在第一掺杂多晶硅层上形成电容器电介质层。第二掺杂多晶硅层形成在电容器介电层上。在半导体衬底中形成深离子阱，其中深离子阱通过电容器深沟槽的底部与第一掺杂多晶硅层电连接。在第二掺杂多晶硅层和STI结构上形成通过栅极绝缘（PGI）层。

67. 发明申请

US20080038931A1 METHOD OF MANUFACTURING A CAPACITOR DEEP TRENCH AND OF ETCHING A DEEP TRENCH OPENING 有权
标题翻译：制造电容式深层电镀和蚀刻深层开关的方法
公开(公告)号：US20080038931A1
公开(公告)日：2008-02-14
申请号：US11871166
申请日：2007-10-12
申请人： Ta-Chuan Yeh , Ni-Min Chung , Kao-Su Huang , Yung-Chang Lin , Ruey-Chyr Lee , Chien-Kuo Wang
发明人： Ta-Chuan Yeh , Ni-Min Chung , Kao-Su Huang , Yung-Chang Lin , Ruey-Chyr Lee , Chien-Kuo Wang
IPC分类号： H01L21/306
CPC分类号： H01L27/1087 , H01L21/76205
摘要： A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
摘要翻译：提供了具有氧化物层，第一氮化硅 - 硅，STI和第二氮化硅 - 硅的衬底。蚀刻第二氮化硅 - 硅层上的图案多晶硅层以形成深沟槽开口。蚀刻图案多晶硅层也加深了深沟槽开口。然后，在深沟槽开口中填充导电层。

68. 发明申请

US20070155089A1 METHOD OF MANUFACTURING A CAPACITOR DEEP TRENCH AND OF ETCHING A DEEP TRENCH OPENING 有权
标题翻译：制造电容式深层电镀和蚀刻深层开关的方法
公开(公告)号：US20070155089A1
公开(公告)日：2007-07-05
申请号：US11306560
申请日：2006-01-03
申请人： Ta-Chuan Yeh , Ni-Min Chung , Kao-Su Huang , Yung-Chang Lin , Ruey-Chyr Lee , Chien-Kuo Wang
发明人： Ta-Chuan Yeh , Ni-Min Chung , Kao-Su Huang , Yung-Chang Lin , Ruey-Chyr Lee , Chien-Kuo Wang
IPC分类号： H01L21/8242
CPC分类号： H01L27/1087 , H01L21/76205
摘要： A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
摘要翻译：提供了具有氧化物层，第一氮化硅 - 硅，STI和第二氮化硅 - 硅的衬底。蚀刻第二氮化硅 - 硅层上的图案多晶硅层以形成深沟槽开口。蚀刻图案多晶硅层也加深了深沟槽开口。然后，在深沟槽开口中填充导电层。

69. 发明申请

US20060268244A1 ZOOM LENS OF A PROJECTOR 审中-公开
标题翻译：投影机的变焦镜头
公开(公告)号：US20060268244A1
公开(公告)日：2006-11-30
申请号：US11420815
申请日：2006-05-30
申请人： Yung-Chang Lin , Jung-Yao Chen
发明人： Yung-Chang Lin , Jung-Yao Chen
IPC分类号： G03B21/14
CPC分类号： G02B15/177 , G03B21/142
摘要： A zoom lens of projector including a first and a second lens groups disposed from the image side in order is provided. The first lens group has a negative effective power ΦU1. The second lens group has a positive effective power ΦU2. The zoom lens has an equivalent power Φ0 and a back focal length BFL, where the BFL*Φ0≧1.0, |ΦU1|Φ0>0.6, and ΦU2/Φ0>0.6. The size of the image projected on a screen by the projector is adjusted by adjusting the positions of the first lens group and the second lens group.
摘要翻译：提供一种投影仪的变焦透镜，其包括从图像侧依次配置的第一透镜组和第二透镜组。第一透镜组具有负的有效功率Phi 。第二透镜组具有正的有效功率Phi 。变焦镜头具有等效功率Phi <0> 0和后焦距BFL，其中BFL * Phi <0> <1.0 > = 1.0，| Phi U1 0.6，Phi <0> 0 > 0.6，Phi 0.6。通过调整第一透镜组和第二透镜组的位置来调整由投影仪投影在屏幕上的图像的尺寸。

70. 发明申请

US20050202628A1 Dynamic random access memory cell and method for fabricating the same 有权
公开(公告)号：US20050202628A1
公开(公告)日：2005-09-15
申请号：US11122655
申请日：2005-05-04
申请人： Yung-Chang Lin , Chia-Wen Liang , Chuan-Fu Wang
发明人： Yung-Chang Lin , Chia-Wen Liang , Chuan-Fu Wang
IPC分类号： H01L21/336 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/10832 , H01L27/10867 , H01L29/66181
摘要： A DRAM cell and a method for fabricating the same are provided. The method includes: forming a trench in a substrate; forming a first capacitor dielectric layer on the surface of the trench; forming a conducting layer inside the trench; forming a second capacitor dielectric layer on the surface of the substrate and on the conducting layer, wherein the substrate around the first and second capacitor dielectric layers serves as a bottom electrode; forming a protruding electrode on the substrate, the protruding electrode being on the substrate around the trench and covering a junction between the trench and the substrate; and electrically connecting the protruding electrode and the conducting layer, the conducting layer and the protruding electrode being an upper electrode.

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