会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 65. 发明授权
    • Probe structures for testing electrical interconnections to integrated circuit electronic devices
    • 用于测试集成电路电子设备的电互连的探头结构
    • US06525551B1
    • 2003-02-25
    • US09081342
    • 1998-05-19
    • Brian Samuel BeamanKeith Edward FogelPaul Alfred LauroEugene John O'SullivanDa-Yuan Shih
    • Brian Samuel BeamanKeith Edward FogelPaul Alfred LauroEugene John O'SullivanDa-Yuan Shih
    • G01R3102
    • G01R1/07307G01R1/06738H01L2924/00013H01L2224/29099
    • A probe structure for probing an electronic device. The probe has: a substrate having a substrate surface having a plurality of substrate electrical contact locations;a plurality of elongated electrical conductors having a first and second end; the first end of each of the plurality of elongated electrical conductors is electrically connected to one of the plurality of substrate electrical contact locations; a plate having a first and second side, and having a plurality of openings therein extending from the first side to the second side; the plate is disposed so that the first side thereof faces sad substrate; the second end of each of the plurality of elongated electrical conductors extends through one of the openings in the plate; a support for maintaining the plate at a distance from the substrate surface; the distance is selected so that the second ends project out from the second side of the plate a sufficient amount so that when the probe structure is pressed against a device under test the second ends of the elongated electrical conductors are maintained within a displacement from an original position by the opening so that the second ends of the elongated electrical conductors remain in contact with an electrical contact location on the device under test.
    • 用于探测电子设备的探头结构。 所述探针具有:具有基板表面的基板,所述基板表面具有多个基板电接触位置;多个细长电导体,具有第一端和第二端; 所述多个细长电导体中的每一个的第一端电连接到所述多个基板电接触位置中的一个; 具有第一和第二侧的板,并且具有从所述第一侧延伸到所述第二侧的多个开口; 该板被设置成使其第一侧面向悲伤的基板; 多个细长电导体中的每一个的第二端延伸穿过板中的一个开口; 用于将板保持在离基板表面一定距离处的支撑件; 选择距离使得第二端从板的第二侧突出足够的量,使得当探针结构被压靠在被测设备上时,细长电导体的第二端保持在与原件的位移之内 通过开口的位置,使得细长电导体的第二端保持与被测器件上的电接触位置接触。
    • 70. 发明授权
    • Amorphization/templated recrystallization method for hybrid orientation substrates
    • 混合取向基板的非晶化/模板重结晶方法
    • US07960263B2
    • 2011-06-14
    • US12767261
    • 2010-04-26
    • Keith Edward FogelKatherine L. SaengerChun-Yung SungHaizhou Yin
    • Keith Edward FogelKatherine L. SaengerChun-Yung SungHaizhou Yin
    • H01L21/20
    • H01L21/02675H01L21/02532H01L21/2022H01L21/76224H01L21/823807
    • The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. The process flow of the present invention solves two major difficulties not disclosed by prior art ATR methods: the creation of “corner defects” at the edges of amorphized Si regions bounded by trenches, and undesired orientation changes during a high temperature post-recrystallization defect-removal annealing of non-ATR'd regions not bounded by trenches. In particular, this invention provides a process flow comprising the steps of (i) amorphization and low-temperature recrystallization performed in substrate regions free of trenches, (ii) formation of trench isolation regions that subsume the defective regions at the edge of the ATR'd regions, and (iii) a high-temperature defect-removal anneal performed with the trench isolation regions in place.
    • 本发明提供了用于制造低缺陷密度混合取向基材的改进的非晶化/模板重结晶(ATR)方法。 用于混合取向衬底制造的ATR方法通常从具有第一取向键合到具有第二取向的第二Si层或衬底的Si层开始。 第一Si层的选定区域是非晶化的,然后通过使用第二Si层作为模板将其再结晶成第二Si层的取向。 本发明的工艺流程解决了现有技术ATR方法未公开的两个主要困难:在由沟槽限定的非晶化Si区域的边缘产生“角部缺陷”,以及在高温后再结晶缺陷 - 未被沟槽限定的非ATR区域的去除退火。 特别地,本发明提供了一种工艺流程,其包括以下步骤:(i)在没有沟槽的衬底区域中进行非晶化和低温重结晶,(ii)形成在ATR'边缘处的缺陷区域的沟槽隔离区域的形成, d区域,以及(iii)在沟槽隔离区域中进行的高温缺陷去除退火。