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61. 发明申请

US20120062726A1 Optical alignment systems for forming LEDs having a rough surface 失效
标题翻译：用于形成具有粗糙表面的LED的光学对准系统
公开(公告)号：US20120062726A1
公开(公告)日：2012-03-15
申请号：US13302308
申请日：2011-11-22
申请人： Robert L. Hsieh , Khiem Nguyen , Warren W. Flack , Andrew M. Hawryluk
发明人： Robert L. Hsieh , Khiem Nguyen , Warren W. Flack , Andrew M. Hawryluk
IPC分类号： H04N7/18
CPC分类号： G03F9/7084 , G03F9/7065 , G03F9/7076 , G03F9/708 , G03F9/7088 , H01L33/22
摘要： An alignment system for aligning a wafer when lithographically fabricating LEDs having an LED wavelength λLED is disclosed. The system includes the wafer. The wafer has a roughened alignment mark with a root-mean-square (RMS) surface roughness σS. The system has a lens configured to superimpose an image of the reticle alignment mark with an image of the roughened alignment mark. The roughened alignment marked image is formed with alignment light having a wavelength λA that is in the range from about 2σS to about 8σS. An image sensor detects the superimposed image. An image processing unit processes the detected superimposed image to measure an alignment offset between the wafer and the reticle.
摘要翻译：公开了一种用于在光刻制造具有LED波长λLED的LED的晶片时对准晶片的对准系统。该系统包括晶片。晶片具有粗糙的对准标记，均方根（RMS）表面粗糙度S。该系统具有配置为用掩模版对准标记的图像叠加掩模版对准标记的图像的透镜。粗糙的对准标记图像由波长λA为约2＆Sgr; S至约8＆Sgr; S的对准光形成。图像传感器检测叠加图像。图像处理单元处理检测到的叠加图像以测量晶片和标线片之间的对准偏移。

62. 发明授权

US08067305B2 Electrically conductive structure on a semiconductor substrate formed from printing 有权
标题翻译：由印刷形成的半导体基板上的导电结构
公开(公告)号：US08067305B2
公开(公告)日：2011-11-29
申请号：US12231457
申请日：2008-09-03
申请人： Arthur W. Zafiropoulo , Andrew M. Hawryluk
发明人： Arthur W. Zafiropoulo , Andrew M. Hawryluk
IPC分类号： H01L21/44
CPC分类号： H01L24/11 , B33Y80/00 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/11442 , H01L2224/11462 , H01L2224/11472 , H01L2224/11515 , H01L2224/1155 , H01L2224/13099 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01058 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Provided are methods for forming an electrically conductive structure of a desired three-dimensional shape on a substantially planar surface of a substrate, e.g., a semiconductor wafer. Typically, the particulate matter is deposited in a layer-by-layer manner and adhered to selected regions on the substrate surface. The particulate matter may be deposited to produce a mold for forming the structure and/or to produce the structure itself. A three-dimensional printer with associated electronic data may be used without the need of a lithographic mask or reticle.
摘要翻译：提供了在基板（例如半导体晶片）的基本平坦的表面上形成所需三维形状的导电结构的方法。通常，颗粒物质以层叠的方式沉积并粘附到基底表面上的选定区域。可以沉积颗粒物质以产生用于形成结构的模具和/或产生结构本身。可以使用具有相关联的电子数据的三维打印机，而不需要光刻掩模或掩模版。

63. 发明申请

US20110278587A1 Fast Annealing for GaN LEDs 有权
标题翻译： GaN LED快速退火
公开(公告)号：US20110278587A1
公开(公告)日：2011-11-17
申请号：US13136019
申请日：2011-07-20
申请人： Yun Wang , Andrew M. Hawryluk
发明人： Yun Wang , Andrew M. Hawryluk
IPC分类号： H01L33/02
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/32 , H01L2933/0016
摘要： Methods of performing fast thermal annealing in forming GaN light-emitting diodes (LEDs) are disclosed, as are GaN LEDs formed using fast thermal annealing. An exemplary method includes forming a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method includes performing fast thermal annealing of the p-GaN layer using either a laser or a flash lamp. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance.
摘要翻译：公开了在形成GaN发光二极管（LED）中执行快速热退火的方法，以及使用快速热退火形成的GaN LED。一种示例性的方法包括形成具有n-GaN层的GaN多层结构和夹持有源层的p-GaN层。该方法包括使用激光或闪光灯来进行p-GaN层的快速热退火。所述方法还包括在所述GaN多层结构顶部形成透明导电层，以及向所述n-GaN层向所述透明导电层添加p接触和n接触。所得GaN LED具有增强的输出功率，较低的导通电压和降低的串联电阻。

64. 发明授权

US07960993B2 Method for capacitive testing of flat panel displays 有权
标题翻译：平板显示器电容测试方法
公开(公告)号：US07960993B2
公开(公告)日：2011-06-14
申请号：US12547251
申请日：2009-08-25
申请人： David W. Gardner , Andrew M. Hawryluk
发明人： David W. Gardner , Andrew M. Hawryluk
IPC分类号： G01R31/26
CPC分类号： G02F1/1309 , G09G3/006
摘要： Each sensor of a linear array of sensors includes, in part, a sensing electrode and an associated feedback circuit. The sensing electrodes are adapted to be brought in proximity to a flat panel having formed thereon a multitude of pixel electrodes in order to capacitively measure the voltage of the pixel electrodes. Each feedback circuit is adapted to actively drive its associated electrode via a feedback signal so as to maintain the voltage of its associated electrode at a substantially fixed bias. Each feedback circuit may include an amplifier having a first input terminal coupled to the sensing electrode and a second input terminal coupled to receive a biasing voltage. The output signal of the amplification circuit is used to generate the feedback signal that actively drives the sensing electrode. The biasing voltage may be the ground potential.
摘要翻译：传感器的线性阵列的每个传感器部分地包括感测电极和相关联的反馈电路。感测电极适于接近其上形成有多个像素电极的平板，以便电容地测量像素电极的电压。每个反馈电路适于经由反馈信号主动驱动其相关联的电极，以便将其相关电极的电压维持在基本上固定的偏压。每个反馈电路可以包括具有耦合到感测电极的第一输入端和耦合以接收偏置电压的第二输入端的放大器。放大电路的输出信号用于产生主动驱动感测电极的反馈信号。偏置电压可能是地电位。

65. 发明申请

US20100140768A1 Systems and processes for forming three-dimensional circuits 审中-公开
标题翻译：用于形成三维电路的系统和工艺
公开(公告)号：US20100140768A1
公开(公告)日：2010-06-10
申请号：US12316154
申请日：2008-12-10
申请人： Arthur W. Zafiropoulo , Yun Wang , Andrew M. Hawryluk
发明人： Arthur W. Zafiropoulo , Yun Wang , Andrew M. Hawryluk
IPC分类号： H01L23/58 , B23P19/00 , H01L21/00
CPC分类号： H01L21/8221 , H01L21/02532 , H01L21/02645 , H01L21/02678 , H01L27/0688 , Y10T29/53174 , Y10T117/1024
摘要： Provided are systems and processes for forming a three-dimensional circuit on a substrate. A radiation source produces a beam that is directed at a substrate having an isolating layer interposed between circuit layers. The circuit layers communicate with reach other via a seed region exhibiting a crystalline surface. At least one circuit layer has an initial microstructure that exhibits electronic properties unsuitable for forming circuit features therein. After being controllably heat treated, the initial microstructure of the circuit layer having unsuitable properties is transformed into one that exhibits electronic properties suitable for forming circuit feature therein. Also provided are three-dimensional circuit structures optionally formed by the inventive systems and/or processes.
摘要翻译：提供了在基板上形成三维电路的系统和工艺。辐射源产生被引导到衬底上的光束，该衬底具有介于电路层之间的隔离层。电路层通过呈现结晶表面的种子区域与达到其它层连通。至少一个电路层具有显示不适于在其中形成电路特征的电子性质的初始微结构。在可控地热处理之后，具有不合适特性的电路层的初始微结构被转化成具有适于形成电路特性的电子特性的微结构。还提供了可选地由本发明的系统和/或过程形成的三维电路结构。

66. 发明申请

US20100084744A1 Thermal processing of substrates with pre- and post-spike temperature control 审中-公开
标题翻译：具有前和后峰值温度控制的基板的热处理
公开(公告)号：US20100084744A1
公开(公告)日：2010-04-08
申请号：US12287085
申请日：2008-10-06
申请人： Arthur W. Zafiropoulo , Andrew M. Hawryluk , James T. McWhirter , Serguei G. Anikitchev
发明人： Arthur W. Zafiropoulo , Andrew M. Hawryluk , James T. McWhirter , Serguei G. Anikitchev
IPC分类号： H01L29/06 , F27D11/00 , H01L21/00
CPC分类号： B23K26/0608 , B23K26/073 , B23K26/082 , B23K26/083 , H01L21/268
摘要： Provided are apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates. The invention typically involves irradiating the substrate surface with first and second images to process regions of the substrate surface at a substantially uniform peak processing temperature along a scan path. A first image may serve to effect spike annealing of the substrates while another may be used to provide auxiliary heat treatment to the substrates before and/or after the spike annealing. Control over the temperature profile of the prespike and/or postspike may also reduce stresses and strains generated in the wafers. Also provided are microelectronic devices formed using the inventive apparatuses and methods.
摘要翻译：提供了用于衬底表面的热处理的装置和方法，例如衬底的受控激光热退火（LTA）。本发明通常包括用基板表面照射第一和第二图像，以沿着扫描路径的基本均匀的峰值处理温度处理基板表面的区域。第一图像可以用于实现基板的尖峰退火，而另一个可以用于在尖峰退火之前和/或之后向基板提供辅助热处理。控制预压和/或后刺的温度分布也可以减少在晶片中产生的应力和应变。还提供了使用本发明的装置和方法形成的微电子器件。

67. 发明授权

US06635588B1 Method for laser thermal processing using thermally induced reflectivity switch 有权
标题翻译：使用热诱导反射率开关的激光热处理方法
公开(公告)号：US06635588B1
公开(公告)日：2003-10-21
申请号：US10078842
申请日：2002-02-19
申请人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , Michael O. Thompson
发明人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , Michael O. Thompson
IPC分类号： H01L2126
CPC分类号： H01L21/02686 , B23K26/009 , B23K26/18 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L21/324
摘要： Method for controlling heat transferred to a workpiece (W) process region (30) from laser radiation (10) using a thermally induced reflectivity switch layer (60). A film stack (6) is formed having an absorber layer (50) atop the workpiece with a portion covering the process region. The absorber layer absorbs and converts laser radiation into heat. Reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer comprises one or more layers, e.g. thermal insulator and reflectivity transition layers. The reflective switch layer covering the process region has a temperature related to the temperature of the process region. Reflectivity of the switch layer changes from a low to a high reflectivity state at a critical temperature of the process region, limiting radiation absorbed by the absorber layer by reflecting incident radiation when switched. This limits the amount of heat transferred to the process region from the absorber layer.
摘要翻译：用于使用热诱导反射率开关层（60）控制从激光辐射（10）传送到工件（W）处理区域（30）的热的方法。一个薄膜叠层（6）被形成为具有覆盖工艺区域的部分的工件上方的吸收层（50）。吸收层吸收并将激光辐射转换成热。反射开关层（60）沉积在吸收层的顶部。反射开关层包括一个或多个层，例如隔热层和反射层过渡层。覆盖处理区域的反射开关层具有与处理区域的温度相关的温度。开关层的反射率在处理区域的临界温度从低反射率状态变化到高反射率状态，通过在切换时反射入射辐射来限制吸收层吸收的辐射。这限制了从吸收层传递到处理区域的热量。

68. 发明授权

US06479821B1 Thermally induced phase switch for laser thermal processing 有权
标题翻译：用于激光热处理的热诱导相位开关
公开(公告)号：US06479821B1
公开(公告)日：2002-11-12
申请号：US09659094
申请日：2000-09-11
申请人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , David A. Markle , Michael O. Thompson
发明人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , David A. Markle , Michael O. Thompson
IPC分类号： G03G516
CPC分类号： H01L21/268 , G03G5/16
摘要： A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with a pulse of radiation (10), which may be in the form of a scanning beam (B), using a thermally induced phase switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs radiation and converts the absorbed radiation into heat. The phase switch layer is deposited above or below the absorber layer. The phase switch layer may comprise one or more thin film layers, and may include a thermal insulator layer and a phase transition layer. Because they are in close proximity, the portion of the phase switch layer covering the process region has a temperature that is close to the temperature of the process region. The phase of the phase switch layer changes from a first phase (e.g., solid) to a second phase (e.g., liquid or vapor) at a phase transition temperature (TP). During this phase change, the phase switch layer absorbs heat but does not significantly change temperature. This limits the temperature of the absorber layer and the process region since both are close to the phase change layer.
摘要翻译：一种用于控制从辐射脉冲（10）暴露于工件（W）的处理区域（30）的热量的方法，装置和系统，其可以是扫描光束（B）的形式，，使用热感应相位层（60）。本发明的装置是具有沉积在工件上方的诸如硅晶片的吸收层（50）的薄膜叠层（6）。吸收层的一部分覆盖工艺区域。吸收层吸收辐射并将吸收的辐射转化成热。相位开关层沉积在吸收层的上方或下方。相位开关层可以包括一个或多个薄膜层，并且可以包括绝热层和相变层。由于它们非常接近，覆盖处理区域的相位开关层的部分具有接近处理区域的温度的温度。在相转变温度（TP）下，相位开关层的相位从第一相（例如，固体）变为第二相（例如，液体或蒸气）。在该相变期间，相开关层吸热，但不会明显改变温度。这限制了吸收层和工艺区域的温度，因为它们都接近于相变层。

69. 发明授权

US06303476B1 Thermally induced reflectivity switch for laser thermal processing 有权
标题翻译：用于激光热处理的热感应反射开关
公开(公告)号：US06303476B1
公开(公告)日：2001-10-16
申请号：US09592184
申请日：2000-06-12
申请人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , Michael O. Thompson
发明人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , Michael O. Thompson
IPC分类号： H01L21245
CPC分类号： B23K26/18 , B23K26/009 , H01L21/268 , H01L21/324
摘要： A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region. The reflectivity of the reflectivity switch layer changes from a low reflectivity state to a high reflectivity state at a critical temperature so as to limit the amount of radiation absorbed by the absorber layer by reflecting the incident radiation. This, in turn, limits the amount of heat transferred to the process region from the absorber layer.
摘要翻译：一种用于通过使用热诱导反射率开关层（60）从激光辐射（10）曝光来控制传送到工件（W）的处理区域（30）的热量的方法，装置和系统。本发明的装置是具有沉积在工件上方的诸如硅晶片的吸收层（50）的薄膜叠层（6）。吸收层的一部分覆盖工艺区域。吸收层吸收激光辐射并将吸收的辐射转化成热。反射开关层（60）沉积在吸收层顶部。反射开关层可以包括一个或多个薄膜层，并且优选地包括热绝缘体层和过渡层。覆盖处理区域的反射开关层的部分具有对应于处理区域的温度的温度。反射率开关层的反射率在临界温度从低反射率状态变为高反射率状态，以通过反射入射辐射来限制吸收层吸收的辐射量。这反过来限制了从吸收层传递到处理区域的热量。

70. 发明授权

US5176970A Virtually distortion-free imaging system for large field, high resolution lithography 失效
标题翻译：几何无失真的成像系统，用于大场，高分辨率光刻
公开(公告)号：US5176970A
公开(公告)日：1993-01-05
申请号：US597968
申请日：1990-10-12
申请人： Andrew M. Hawryluk , Natale M. Ceglio
发明人： Andrew M. Hawryluk , Natale M. Ceglio
IPC分类号： G03F7/20
CPC分类号： G03F7/70208 , G03F7/2002 , G03F7/70233 , G03F7/70275 , G03F7/70433
摘要： Virtually distortion free large field high resolution imaging is performed using an imaging system which contains large field distortion or field curvature. A reticle is imaged in one direction through the optical system to form an encoded mask. The encoded mask is then imaged back through the imaging system onto a wafer positioned at the reticle position.
摘要翻译：使用包含大的场失真或场曲率的成像系统执行几乎无失真的大场高分辨率成像。通过光学系统在一个方向上对掩模版进行成像，以形成编码掩模。然后将编码的掩模通过成像系统成像回到位于掩模版位置的晶片上。

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