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61. 发明申请

US20110259408A1 METHOD FOR PATTERNING A SUBSTRATE USING ION ASSISTED SELECTIVE DEPOSITION 有权
标题翻译：使用离子辅助选择性沉积方式绘制基板的方法
公开(公告)号：US20110259408A1
公开(公告)日：2011-10-27
申请号：US13091289
申请日：2011-04-21
申请人： Deepak A. Ramappa , Ludovic Godet
发明人： Deepak A. Ramappa , Ludovic Godet
IPC分类号： H01L31/06 , H01L31/0224 , H01L31/0376
CPC分类号： H01L21/00 , C23C14/042 , C23C14/48 , C23C16/02 , C23C16/04 , C23C16/50 , H01L31/0682 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of patterning a substrate includes providing a focusing plate adjacent to a plasma chamber containing a plasma, the focusing plate configured to extract ions from the plasma through at least one aperture that provides focused ions towards the substrate. The method further includes directing first ions through the at least one aperture to one or more first regions of the substrate so as to condense first gaseous species provided in ambient of the substrate on the one or more first regions of the substrate.
摘要翻译：图案化衬底的方法包括提供邻近包含等离子体的等离子体室的聚焦板，该聚焦板被配置为通过至少一个孔向等离子体提取离子，所述孔向衬底提供聚焦离子。该方法还包括将第一离子引导通过至少一个孔到基底的一个或多个第一区域，以便在衬底的一个或多个第一区域上冷凝在衬底环境中提供的第一气态物质。

62. 发明申请

US20100041219A1 USJ TECHNIQUES WITH HELIUM-TREATED SUBSTRATES 有权
公开(公告)号：US20100041219A1
公开(公告)日：2010-02-18
申请号：US12533550
申请日：2009-07-31
申请人： Christopher R. HATEM , Ludovic Godet
发明人： Christopher R. HATEM , Ludovic Godet
IPC分类号： H01L21/265
CPC分类号： H01L21/26586 , H01L21/26506 , H01L29/6659 , H01L29/7833
摘要： A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.

63. 发明申请

US20090200461A1 Closed Loop Control And Process Optimization In Plasma Doping Processes Using A Time of Flight Ion Detector 有权
标题翻译：使用飞行时间离子检测器的等离子体掺杂过程中的闭环控制和工艺优化
公开(公告)号：US20090200461A1
公开(公告)日：2009-08-13
申请号：US12029710
申请日：2008-02-12
申请人： Deven M. Raj , Ludovic Godet , Bernard Lindsay , Timothy Miller , George D. Papasouliotis
发明人： Deven M. Raj , Ludovic Godet , Bernard Lindsay , Timothy Miller , George D. Papasouliotis
IPC分类号： B01D59/44
CPC分类号： C23C14/48 , C23C14/54 , H01J37/32412 , H01J37/32935 , H01J37/3299
摘要： A method of controlling a plasma doping process using a time-of-flight ion detector includes generating a plasma comprising dopant ions in a plasma chamber proximate to a platen supporting a substrate. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A spectrum of ions present in the plasma is measured as a function of ion mass with a time-of-flight ion detector. The total number ions impacting the substrate is measured with a Faraday dosimetry system. An implant profile is determined from the measured spectrum of ions. An integrated dose is determined from the measured total number of ions and the calculated implant profile. At least one plasma doping parameter is modified in response to the calculated integrated dose.
摘要翻译：使用飞行时间离子检测器控制等离子体掺杂过程的方法包括在靠近支撑衬底的压板的等离子体室中产生包含掺杂剂离子的等离子体。压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。使用飞行时间离子检测器测量存在于等离子体中的离子的光谱作为离子质量的函数。用法拉第剂量测定系统测量影响底物的总数离子。从测量的离子光谱确定植入物轮廓。从测量的离子总数和计算出的植入物轮廓确定综合剂量。响应于计算的积分剂量修改至少一个等离子体掺杂参数。

64. 发明授权

US08907307B2 Apparatus and method for maskless patterned implantation 有权
标题翻译：无掩模图案植入的装置和方法
公开(公告)号：US08907307B2
公开(公告)日：2014-12-09
申请号：US13046239
申请日：2011-03-11
申请人： Christopher J. Leavitt , Ludovic Godet , Timothy J. Miller
发明人： Christopher J. Leavitt , Ludovic Godet , Timothy J. Miller
IPC分类号： H01J3/14 , H01J37/302 , H01J37/317 , H01J37/32
CPC分类号： H01J37/3172 , H01J37/3023 , H01J37/32009 , H01J37/32137 , H01J37/32376 , H01J37/32412 , H01J37/32623 , H01J2237/31711
摘要： A method of implanting a workpiece in an ion implantation system. The method may include providing an extraction plate adjacent to a plasma chamber containing a plasma, such that the extraction plate extracts ions from the plasma through at least one aperture that provides an ion beam having ions distributed over a range of an angles of incidence on the workpiece. The method may include scanning the workpiece with respect to the extraction plate and varying a power level of the plasma during the scanning from a first power level to a second power level, wherein at a surface of the workpiece, a first beam width at a first power level is greater than a second beam width at a second power level.
摘要翻译：在离子注入系统中植入工件的方法。该方法可以包括提供与含有等离子体的等离子体室相邻的提取板，使得提取板通过至少一个孔提取离子，等离子体提供离子束，离子束具有分布在入射角范围内的离子工件。该方法可以包括相对于提取板扫描工件并且在从第一功率水平到第二功率水平的扫描期间改变等离子体的功率水平，其中在工件的表面处具有第一光束宽度功率水平大于第二功率水平的第二波束宽度。

65. 发明授权

US08906576B2 Material engineering for high performance Li-ion battery electrodes 有权
标题翻译：高性能锂离子电池电极材料工程
公开(公告)号：US08906576B2
公开(公告)日：2014-12-09
申请号：US13357647
申请日：2012-01-25
申请人： Blake L. Darby , Ludovic Godet , Xianfeng Lu , Tristan Yonghui Ma
发明人： Blake L. Darby , Ludovic Godet , Xianfeng Lu , Tristan Yonghui Ma
IPC分类号： H01M8/22 , H01M4/04
CPC分类号： H01M4/04 , H01M4/0428 , Y02E60/12
摘要： A method of treating an electrode for a battery to enhance its performance is disclosed. By depositing a layer of porous carbon onto the electrode, its charging and discharging characteristics, as well as chemical stability may be improved. The method includes creating a plasma that includes carbon and attracting the plasma toward the electrode, such as by biasing a platen on which the electrode is disposed. In some embodiments, an etching process is also performed on the deposited porous carbon to increase its surface area. The electrode may also be exposed to a hydrophilic treatment to improve its interaction with the electrolyte. In addition, a battery which includes at least one electrode treated according to this process is disclosed.
摘要翻译：公开了一种处理电池用电极以提高其性能的方法。通过在电极上沉积多孔碳层，可以提高其充电和放电特性以及化学稳定性。该方法包括产生包括碳并且等离子体朝向电极吸引的等离子体，例如通过偏置设置有电极的压板。在一些实施例中，也对沉积的多孔碳进行蚀刻工艺以增加其表面积。电极也可以暴露于亲水处理以改善其与电解质的相互作用。此外，公开了包括根据该方法处理的至少一个电极的电池。

66. 发明授权

US08835287B2 Method of implanting a workpiece to improve growth of a compound semiconductor 有权
标题翻译：植入工件以改善化合物半导体生长的方法
公开(公告)号：US08835287B2
公开(公告)日：2014-09-16
申请号：US13468744
申请日：2012-05-10
申请人： Ludovic Godet , Morgan D. Evans
发明人： Ludovic Godet , Morgan D. Evans
IPC分类号： H01L21/00 , H01L21/02 , H01L21/266 , H01L21/223 , H01L29/267 , H01L21/265
CPC分类号： H01L21/0237 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/2236 , H01L21/265 , H01L21/26533 , H01L21/266 , H01L29/267
摘要： A workpiece is implanted to improve growth of a compound semiconductor, such as GaN. This workpiece may be implanted such that the workpiece has a dose at a center different from a dose at a periphery. This workpiece also may be implanted one or more times to form a pattern of lines, which may be a grid, a series of circles, or other shapes. The distance between certain pairs of lines may be different across the workpiece.
摘要翻译：植入工件以改善诸如GaN的化合物半导体的生长。可以将该工件植入，使得工件具有不同于外围剂量的中心处的剂量。该工件也可以被植入一次或多次以形成线的图案，其可以是网格，一系列圆或其它形状。某些线对之间的距离在工件上可能是不同的。

67. 发明授权

US08778465B2 Ion-assisted direct growth of porous materials 有权
标题翻译：离子辅助直接生长多孔材料
公开(公告)号：US08778465B2
公开(公告)日：2014-07-15
申请号：US13469750
申请日：2012-05-11
申请人： Ludovic Godet , Xiangfeng Lu , Deepak Ramappa
发明人： Ludovic Godet , Xiangfeng Lu , Deepak Ramappa
IPC分类号： H05H1/24 , H01J37/32 , H01L31/028 , C23C16/24 , C23C16/04 , C23C16/505 , H01L31/0216
CPC分类号： C23C16/24 , C23C16/045 , C23C16/505 , H01J37/32082 , H01L31/02168 , H01L31/0284 , Y02E10/50
摘要： Methods of creating porous materials, such as silicon, are described. In some embodiments, plasma sheath modification is used to create ion beams of various incidence angles. These ion beams may, in some cases, form a focused ion beam. The wide range of incidence angles allows the material to be deposited amorphously. The porosity and pore size can be varied by changing various process parameters. In other embodiments, porous oxides can be created by adding oxygen to previously created layers of porous material.
摘要翻译：描述了产生多孔材料如硅的方法。在一些实施例中，使用等离子体护套修改来产生各种入射角的离子束。在某些情况下，这些离子束可形成聚焦离子束。大范围的入射角允许材料无定形地沉积。通过改变各种工艺参数可以改变孔隙度和孔径。在其它实施方案中，多孔氧化物可以通过向先前产生的多孔材料层加入氧来产生。

68. 发明授权

US08716682B2 Apparatus and method for multiple slot ion implantation 有权
标题翻译：多槽离子注入的装置和方法
公开(公告)号：US08716682B2
公开(公告)日：2014-05-06
申请号：US13079369
申请日：2011-04-04
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
IPC分类号： H05H1/24
CPC分类号： H01J37/3023 , H01J27/024 , H01J37/08 , H01J37/3172 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J37/32752 , H01J2237/31711
摘要： An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture.
摘要翻译：离子注入系统可以包括用于提供等离子体的等离子体源和被布置成接收相对于等离子体的偏置的工件夹持器，以将等离子体护套上的离子吸引到衬底。该系统还可以包括提取板装置，其包括多个不同的孔，每个孔被布置成提供具有分布在工件上的入射角范围上的离子的离子束，其中从第一孔提取的第一离子束具有第一束轮廓与从第二孔提取的第二离子束不同。

69. 发明申请

US20140027274A1 Three Dimensional Metal Deposition Technique 有权
标题翻译：三维金属沉积技术
公开(公告)号：US20140027274A1
公开(公告)日：2014-01-30
申请号：US13560664
申请日：2012-07-27
申请人： Ludovic Godet , Adjin Sarajlic
发明人： Ludovic Godet , Adjin Sarajlic
IPC分类号： C23C14/34
CPC分类号： H01J37/32422 , C23C14/046 , C23C14/3407 , C23C14/345 , H01J37/32357 , H01J37/32403 , H01J37/32623 , H01J37/32633 , H01J37/32642 , H01J37/3414 , H01J37/3417 , H01J37/3467 , H01J2237/08 , H01J2237/31701
摘要： A plasma processing apparatus is disclosed. The plasma processing apparatus includes a source configured to generate a plasma in a process chamber having a plasma sheath adjacent to the front surface of a workpiece, and a plasma sheath modifier. The plasma sheath modifier controls a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. A metal target is affixed to the back surface of the plasma sheath modifier so as to be electrically insulated from the plasma sheath modifier and is electrically biased such that ions exiting the plasma and passing through an aperture in the plasma sheath modifier are attracted toward the metal target. These ions cause sputtering of the metal target, allowing three dimensional metal deposition of the workpiece.
摘要翻译：公开了一种等离子体处理装置。等离子体处理装置包括被配置为在具有与工件的前表面相邻的等离子体鞘的处理室中产生等离子体的源和等离子体护套改性剂。等离子体护套修改器控制等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由面向等离子体的工件的前表面限定的平面。将金属靶固定到等离子体护套改性剂的背面，以便与等离子体护套改性剂电绝缘，并被电偏置，使得离开等离子体并通过等离子体护套改性剂中的孔的离子被吸引到金属目标。这些离子引起金属靶溅射，允许工件的三维金属沉积。

70. 发明申请

US20130189579A1 Material Engineering for High Performance Li-ion Battery Electrodes 有权
标题翻译：高性能锂离子电池电极材料工程
公开(公告)号：US20130189579A1
公开(公告)日：2013-07-25
申请号：US13357647
申请日：2012-01-25
申请人： Blake L. Darby , Ludovic Godet , Xianfeng Lu , Tristan Yonghui Ma
发明人： Blake L. Darby , Ludovic Godet , Xianfeng Lu , Tristan Yonghui Ma
IPC分类号： H01M4/131 , C23C16/26 , C23C16/56 , H01M2/16 , C23C16/50
CPC分类号： H01M4/04 , H01M4/0428 , Y02E60/12
摘要： A method of treating an electrode for a battery to enhance its performance is disclosed. By depositing a layer of porous carbon onto the electrode, its charging and discharging characteristics, as well as chemical stability may be improved. The method includes creating a plasma that includes carbon and attracting the plasma toward the electrode, such as by biasing a platen on which the electrode is disposed. In some embodiments, an etching process is also performed on the deposited porous carbon to increase its surface area. The electrode may also be exposed to a hydrophilic treatment to improve its interaction with the electrolyte. In addition, a battery which includes at least one electrode treated according to this process is disclosed.
摘要翻译：公开了一种处理电池用电极以提高其性能的方法。通过在电极上沉积多孔碳层，可以提高其充电和放电特性以及化学稳定性。该方法包括产生包括碳并且等离子体朝向电极吸引的等离子体，例如通过偏置设置有电极的压板。在一些实施例中，也对沉积的多孔碳进行蚀刻工艺以增加其表面积。电极也可以暴露于亲水处理以改善其与电解质的相互作用。此外，公开了包括根据该方法处理的至少一个电极的电池。

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