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61. 发明授权

US08691701B2 Strip with reduced low-K dielectric damage 有权
标题翻译：具有降低的低K电介质损伤的带
公开(公告)号：US08691701B2
公开(公告)日：2014-04-08
申请号：US12463155
申请日：2009-05-08
申请人： Bing Ji , Andrew D. Bailey, III , Maryam Moravej , Stephen M. Sirard
发明人： Bing Ji , Andrew D. Bailey, III , Maryam Moravej , Stephen M. Sirard
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/31116
摘要： A method for forming etched features in a low-k dielectric layer disposed below the photoresist mask in a plasma processing chamber is provided. Features are etched into the low-k dielectric layer through the photoresist mask. The photoresist mask is stripped, wherein the stripping comprising at least one cycle, wherein each cycle comprises a fluorocarbon stripping phase, comprising flowing a fluorocarbon stripping gas into the plasma processing chamber, forming a plasma from the fluorocarbon stripping gas, and stopping the flow of the fluorocarbon stripping gas into the plasma processing chamber and a reduced fluorocarbon stripping phase, comprising flowing a reduced fluorocarbon stripping gas that has a lower fluorocarbon flow rate than the fluorocarbon stripping gas into the plasma processing chamber, forming the plasma from the reduced fluorocarbon stripping gas, and stopping the flow of the reduced fluorocarbon stripping gas.
摘要翻译：提供了一种用于在等离子体处理室中的光致抗蚀剂掩模下方形成低k电介质层中形成蚀刻特征的方法。通过光致抗蚀剂掩模将特征蚀刻到低k电介质层中。剥离光致抗蚀剂掩模，其中剥离包括至少一个循环，其中每个循环包括氟碳汽提相，包括将氟碳汽提气体流入等离子体处理室，从氟碳汽提气体形成等离子体，并停止进入等离子体处理室中的碳氟化合物汽提气体和减少的氟碳汽提阶段，包括将具有低于碳氟化合物汽提气体的碳氟化合物流速低的氟化碳汽提气体流入等离子体处理室，从还原氟碳汽提气体形成等离子体，并停止还原氟烃剥离气体的流动。

62. 发明授权

US08440051B2 Plasma processing chamber for bevel edge processing 有权
标题翻译：等离子处理室用于斜边加工
公开(公告)号：US08440051B2
公开(公告)日：2013-05-14
申请号：US13082393
申请日：2011-04-07
申请人： Andrew D. Bailey, III , Yunsang Kim
发明人： Andrew D. Bailey, III , Yunsang Kim
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32385 , H01J37/321 , H01J37/32366 , H01J37/32706 , H01L21/02087 , H01L21/67069 , H01L21/6715
摘要： Chambers for processing a bevel edge of a substrate are provided. One such chamber includes a bottom electrode defined to support a substrate in the chamber. The bottom electrode has a bottom first level for supporting the substrate and a bottom second level near an outer edge of bottom electrode. The bottom second level is defined at a step below the bottom first level. Further included is a top electrode oriented above the bottom electrode. The top electrode having a top first level and a top second level, where the top first level is opposite the bottom first level and the top second level is opposite the bottom second level. The top second level is defined at a step above the top first level. A bottom ring mount oriented at the bottom second level is included. The bottom ring mount includes a first adjuster for moving a bottom permanent magnet toward and away from the top electrode. Further included is a top ring mount oriented at the top second level. The top ring mount includes a second adjuster for moving a top permanent magnet toward and away from the bottom electrode.
摘要翻译：提供了用于处理基板的斜边缘的室。一个这样的室包括限定为支撑室中的衬底的底部电极。底部电极具有用于支撑衬底的底部第一电平和底部电极的外部边缘附近的底部第二电平。底部第二级别定义在底层第一级以下的一级。还包括位于底部电极上方的顶部电极。顶部电极具有顶部第一电平和顶部第二电平，其中顶部第一电平与底部第一电平相反，而顶部第二电平与底部第二电平相反。顶级的第二级是在顶级第一级以上的一级定义的。包括位于底部第二级的底环安装座。底环安装件包括用于使底部永磁体朝向和远离顶部电极移动的第一调节器。另外还包括一个位于顶部第二层的顶环安装座。顶环安装件包括用于使顶部永磁体朝向和远离底部电极移动的第二调节器。

63. 发明授权

US08398875B2 Method of orienting an upper electrode relative to a lower electrode for bevel edge processing 有权
标题翻译：相对于下电极定向上电极用于斜边加工的方法
公开(公告)号：US08398875B2
公开(公告)日：2013-03-19
申请号：US13047735
申请日：2011-03-14
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Alan M. Schoepp , John D. Boniface
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Alan M. Schoepp , John D. Boniface
IPC分类号： B44C1/22
CPC分类号： H01L21/67069 , H01J37/32568
摘要： Methods for orienting an upper electrode relative to a lower electrode are provided. The lower electrode is configured to have a desired existing orientation in a process chamber to define active and inactive process zones in the process chamber for processing a wafer. The method includes configuring each electrode with a reference surface, where a lower electrode reference surface is in the desired existing orientation and an upper electrode reference surface to be oriented parallel to the lower electrode reference surface. Then, temporarily holding the upper electrode reference surface oriented parallel to the lower electrode reference surface, and securing the upper electrode to a drive to mount the upper electrode reference surface parallel to the lower electrode reference surface. Other method configurations are also disclosed and illustrated.
摘要翻译：提供了用于使上电极相对于下电极定向的方法。下电极被配置为在处理室中具有期望的现有取向，以在处理室中限定用于处理晶片的有源和非活性工艺区。该方法包括用参考表面配置每个电极，其中下电极参考表面处于所需的现有取向，并且上电极参考表面被平行于下电极参考表面定向。然后，暂时保持与上部电极基准面平行的上部电极基准面，并将该上部电极固定在与上述电极基准面平行的驱动器上。还公开和示出了其它方法构造。

64. 发明申请

US20120283865A1 METHODS OF IN-SITU MEASUREMENTS OF WAFER BOW 审中-公开
标题翻译： WAFER BOW的现场测量方法
公开(公告)号：US20120283865A1
公开(公告)日：2012-11-08
申请号：US13532097
申请日：2012-06-25
申请人： Andrew D. Bailey, III
发明人： Andrew D. Bailey, III
IPC分类号： H01L21/66 , H01L21/677 , G05B19/19 , G06F19/00
CPC分类号： H01L22/12 , G01B21/08 , G01B21/20 , G01B21/30 , H01L22/20
摘要： Various embodiments describe a method of quantifying bow in a wafer. In one embodiment, the method includes measuring a first plurality of distances from a first sensor to a first surface of the wafer to calculate the bow in the wafer. The first sensor is positioned outside of a set of process modules of the plasma processing system. A determination is made whether the calculated bow of the wafer is within a pre-determined range. If the calculated bow of the wafer is within the pre-determined range, the wafer is moved into a process module of the set of process modules for processing and a recipe for processing the wafer is adjusted based on the calculated bow of the wafer. If the calculated bow of the wafer is outside the pre-determined range, the wafer is removed from the plasma processing system. Other methods are described as well.
摘要翻译：各种实施例描述了在晶片中量化弓的方法。在一个实施例中，该方法包括测量从晶片的第一传感器到第一表面的第一多个距离以计算晶片中的弓形。第一传感器位于等离子体处理系统的一组处理模块之外。确定晶片的计算弓是否在预定范围内。如果所计算出的晶片的弓轴在预定范围内，则将晶片移动到该组处理模块的处理模块中以进行处理，并且基于所计算出的晶片的弓形来调整用于处理晶片的配方。如果计算出的晶片的弓轴在预定范围之外，则从等离子体处理系统中移除晶片。还描述了其他方法。

65. 发明授权

US08304262B2 Wiggling control for pseudo-hardmask 有权
标题翻译：伪硬掩码的摆动控制
公开(公告)号：US08304262B2
公开(公告)日：2012-11-06
申请号：US13029824
申请日：2011-02-17
申请人： Ben-Li Sheu , Rajinder Dhindsa , Vinay Pohray , Eric A. Hudson , Andrew D. Bailey, III
发明人： Ben-Li Sheu , Rajinder Dhindsa , Vinay Pohray , Eric A. Hudson , Andrew D. Bailey, III
IPC分类号： H01L21/00 , H01L21/4763 , H01L21/461 , H01L21/302
CPC分类号： H01L21/31116 , H01L21/31144
摘要： A method for etching features in an etch layer. A conditioning for a patterned pseudo-hardmask of amorphous carbon or polysilicon disposed over the etch layer is provided, where the conditioning comprises providing a fluorine free deposition gas comprising a hydrocarbon gas, forming a plasma from the fluorine free deposition gas, providing a bias less than 500 volts, and forming a deposition on top of the patterned pseudo-hardmask. The etch layer is etched through the patterned pseudo-hardmask.
摘要翻译：一种用于蚀刻蚀刻层中的特征的方法。提供了一种用于设置在蚀刻层上的非晶碳或多晶硅的图案化伪硬掩模的调理，其中调节包括提供包含烃气体的无氟沉积气体，从无氟沉积气体形成等离子体，超过500伏，并且在图案化伪硬掩模的顶部上形成沉积物。蚀刻层通过图案化伪硬掩模进行蚀刻。

66. 发明申请

US20120118320A1 Methods for Isolated Bevel Edge Clean 审中-公开
标题翻译：隔离坡口清洁方法
公开(公告)号：US20120118320A1
公开(公告)日：2012-05-17
申请号：US13357559
申请日：2012-01-24
申请人： Hyungsuk Alexander Yoon , Andrew D. Bailey, III , Jason A. Ryder , Mark H. Wilcoxon , Jeffrey G. Gasparitsch , Randy Johnson , Stephan P. Hoffmann
发明人： Hyungsuk Alexander Yoon , Andrew D. Bailey, III , Jason A. Ryder , Mark H. Wilcoxon , Jeffrey G. Gasparitsch , Randy Johnson , Stephan P. Hoffmann
IPC分类号： B08B1/04 , B08B5/04 , B08B3/08
CPC分类号： H01L21/67046 , Y10S134/902
摘要： Methods for cleaning an edge of a semiconductor substrate include providing a brush in a housing, the housing provides a volume for holding the brush. A cleaning fluid is inserted into the housing to at least partially fill the volume holding the brush, with the cleaning fluid. The cleaning fluid is removed from the volume of the housing while the cleaning fluid is being inserted. The brush is rotated within the housing while the cleaning fluid is inserted and removed. The edge of the semiconductor substrate is inserted into a slot of the housing. The edge of the semiconductor substrate inserted into the slot is maintained at a distance and for a period of time. The distance is configured such that the brush contacts the edge of the semiconductor substrate but continues to enable rotation of the brush within the housing.
摘要翻译：用于清洁半导体衬底的边缘的方法包括在壳体中设置刷子，所述壳体提供用于保持刷子的体积。将清洁流体插入壳体中以至少部分地填充保持刷子的体积与清洁流体。在清洁流体被插入时，清洁流体从壳体的体积中移除。当清洁流体被插入和移除时，刷子在壳体内旋转。将半导体衬底的边缘插入壳体的槽中。插入槽中的半导体衬底的边缘保持一段距离并持续一段时间。该距离被配置成使得电刷接触半导体衬底的边缘，但是继续能够使电刷在壳体内旋转。

67. 发明申请

US20110097904A1 METHOD FOR REPAIRING LOW-K DIELECTRIC DAMAGE 审中-公开
标题翻译：修复低K电介质损伤的方法
公开(公告)号：US20110097904A1
公开(公告)日：2011-04-28
申请号：US12604224
申请日：2009-10-22
申请人： Stephen M. Sirard , Kenji Takeshita , Andrew D. Bailey, III
发明人： Stephen M. Sirard , Kenji Takeshita , Andrew D. Bailey, III
IPC分类号： H01L21/3065
CPC分类号： H01L21/3105 , H01L21/76814 , H01L21/76826
摘要： A method for repairing damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A repair gas comprising CH4 gas is provided. The repair gas is formed into a plasma, while maintaining a pressure below 50 mTorr. Hydroxyl attached to silicon is replaced with methyl from the plasma formed by the repair gas.
摘要翻译：提供了用有机化合物修复对基于硅的低k电介质层的损伤的方法，其中损伤用连接到硅上的羟基连接到硅上的甲基替代。提供了包含CH 4气体的修复气体。将修复气体形成为等离子体，同时保持低于50mTorr的压力。与由修复气体形成的等离子体中的被甲基取代的羟基被甲基取代。

68. 发明授权

US07922866B2 Apparatus for aligning electrodes in a process chamber to protect an exclusion area within an edge environ of a wafer 有权
标题翻译：用于在处理室中对准电极以保护晶片边缘环境内的排除区域的装置
公开(公告)号：US07922866B2
公开(公告)日：2011-04-12
申请号：US12647301
申请日：2009-12-24
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Alan M. Schoepp , John D. Boniface
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Alan M. Schoepp , John D. Boniface
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/67069 , H01J37/32568
摘要： Positional relationships are established in a process chamber. A base is configured with a lower electrode surface to support a wafer, and an upper electrode has a lower surface. A drive mounted on the base has a linkage connected to the upper electrode. A fixture placed on the lower surface moves into a desired orientation of the lower electrode. With the upper electrode loosely connected by the linkage to the drive, the fixture transfers the desired orientation to the upper electrode. The linkage is tightened to maintain the desired orientation, the fixture is removed and a process exclusion insert is mounted to the upper electrode. The drive moves the upper electrode and the insert to define an inactive process zone between the upper electrode and the wafer on the lower electrode to protect a central area of the wafer during etching of a wafer edge environ around the central area.
摘要翻译：位置关系建立在一个过程室中。基底配置有下电极表面以支撑晶片，并且上电极具有下表面。安装在基座上的驱动器具有连接到上电极的连杆。放置在下表面上的固定器移动到下电极的期望取向。通过与驱动器的联动松动地连接上电极，固定装置将期望的方向传送到上电极。连接件被拧紧以保持所需的取向，夹具被移除，并且将过程排除插入件安装到上电极。驱动器移动上电极和插入件以在下电极上的上电极和晶片之间限定非活动的工艺区域，以在蚀刻围绕中心区域的晶片边缘环境时保护晶片的中心区域。

69. 发明授权

US07858898B2 Bevel etcher with gap control 有权
标题翻译：斜角蚀刻机具有间隙控制
公开(公告)号：US07858898B2
公开(公告)日：2010-12-28
申请号：US11698191
申请日：2007-01-26
申请人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Andras Kuthi , Yunsang Kim , William S. Kennedy
发明人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Andras Kuthi , Yunsang Kim , William S. Kennedy
IPC分类号： B23K10/00
CPC分类号： H01L21/0209 , H01J37/32366 , H01J37/32568 , H01J2237/335 , H01L21/67069
摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.
摘要翻译：一种用于清洁半导体衬底的斜边缘的装置。该装置包括具有顶表面并适于支撑基底的下电极组件和具有与顶表面相对的底表面的上电极组件。下部和上部电极组件在操作期间产生用于清洁设置在顶部和底部表面之间的衬底的斜面边缘的等离子体。该装置还包括用于将上电极组件悬挂在下支撑件上并且调节底表面相对于顶表面的倾斜角度和水平平移的机构。

70. 发明申请

US20100253224A1 MODULATED MULTI-FREQUENCY PROCESSING METHOD 有权
标题翻译：调制多频处理方法
公开(公告)号：US20100253224A1
公开(公告)日：2010-10-07
申请号：US12621590
申请日：2009-11-19
申请人： Alexei Marakhtanov , Eric Hudson , Rajhinder Dhindsa , Andrew D. Bailey, III
发明人： Alexei Marakhtanov , Eric Hudson , Rajhinder Dhindsa , Andrew D. Bailey, III
IPC分类号： H05B31/26
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32137 , H01J37/32146 , H01J2237/334 , H01J2237/3348
摘要： A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion. The duty cycle is the ratio of a duration of the maximum amplitude portion to the sum of the duration of the maximum amplitude portion and the duration of the minimum amplitude portion. The second periodic portion additionally has a second frequency during the maximum amplitude portion. An amplitude modulation of the second periodic portion is phase locked to the first continuous periodic portion.
摘要翻译：提供了一种操作处理系统的方法，该处理系统具有布置成接收气体的空间和可操作以在该空间内产生电磁场的电磁场产生部分。所述方法包括向所述空间提供气体，以及利用驱动电位操作所述电磁场产生部分，以在所述空间内产生电磁场，以将所述气体的至少一部分转化为等离子体。作为时间的函数的驱动电位基于第一潜在功能部分和第二电位功能部分。第一潜在功能部分包括具有第一幅度和第一频率的第一连续周期部分。第二电位功能部分包括具有最大振幅部分和最小振幅部分和占空比的第二周期部分。最大幅度部分比最小振幅部分的幅度更大。占空比是最大幅度部分的持续时间与最大振幅部分的持续时间和最小振幅部分的持续时间之和的比率。第二周期部分在最大振幅部分期间另外具有第二频率。第二周期部分的幅度调制被锁相到第一连续周期部分。

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