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    • 62. 发明申请
    • Method of fabricating semiconductor device
    • 制造半导体器件的方法
    • US20050095772A1
    • 2005-05-05
    • US10998920
    • 2004-11-29
    • Akira Ishikawa
    • Akira Ishikawa
    • H01L21/77H01L21/84H01L27/12H01L29/786H01L21/8238
    • H01L27/1288H01L27/1214H01L27/124H01L27/127H01L29/78621
    • In the step of forming a gate electrode in the region having the line width in which the miniaturization has been progressed, the present invention provides a method of fabricating a thin film transistor (TFT) whose patterning margin can be enlarged without requiring carrying out the photolithography multiple times. According to a fabricating method of the present invention, the mask pattern of the first layer and the mask pattern of the second layer can be formed in a self-aligned process and as a mask pattern which is analog and whose size are different from each other by performing the photolithography once. The hut shape gate can be formed in a self-aligned process by setting the line width located on the active layer so as to be Li in the mask pattern of the first layer, and so as to be L′ in the mask pattern of the second layer, and by in turn carrying out the anisotropic etching using the mask pattern of the second layer and the anisotropic etching using the mask pattern of the first layer. Therefore, the problem of a fabricating method being complex along with the miniaturization of a TFT can be solved by reducing the number of reticles using in the fabricating steps.
    • 在具有进行小型化的线宽度的区域中形成栅电极的步骤中,本发明提供了一种制造薄膜晶体管(TFT)的方法,该薄膜晶体管(TFT)可以在不需要进行光刻的情况下扩大其图案边缘 多次。 根据本发明的制造方法,第一层的掩模图案和第二层的掩模图案可以以自对准工艺形成,并且可以形成为模拟的尺寸彼此不同的掩模图案 通过进行光刻一次。 可以通过将位于有源层上的线宽度设置为第一层的掩模图案中的Li,从而以自对准的方式形成小屋形状门,从而在第一层的掩模图案中为L' 通过第二层的掩模图案和使用第一层的掩模图案的各向异性蚀刻进行各向异性蚀刻。 因此,通过在制造步骤中减少使用的掩模版的数量,可以解决制造方法与TFT的小型化一起复杂的问题。
    • 66. 发明授权
    • Miniature pump-through sensor modules
    • 微型泵浦传感器模块
    • US06324904B1
    • 2001-12-04
    • US09641480
    • 2000-08-18
    • Akira IshikawaNabuo TakedaSuzanne I. AhnSteven R. Hays
    • Akira IshikawaNabuo TakedaSuzanne I. AhnSteven R. Hays
    • F21B4712
    • E21B47/12E21B47/011E21B47/124H01L29/0657H01L2924/1017
    • Sensor modules are provided which are pumped into a well by first being pumped downhole within a drill string, then passing through the drill bit and being circulated uphole in the annulus between the drill string and the borehole of the well. The sensors take measurement readings as they are being pumped uphole through the annulus. The sensors are preferably separated from the mud returns from the well, and then read at an inductive read unit. The sensor modules are provided by semiconductor substrates which measure downhole well parameters, and then store the date for retrieval at the surface. The semiconductor substrates preferably have a plurality of sides on which measurement sensors and circuitry may be formed, allowing the circuitry and the sensors to be made of smaller sizes. Such sensors include temperature sensors, three-dimensional stain gauges, which are also useful as pressure transducers, inductive pressure transducers, inclination sensors, accelerometers, gyroscopes and radiation detectors. The sensors and circuitry are preferably provided on spherically shaped semiconductor substrates.
    • 提供传感器模块,其通过首先在钻柱中被泵入井下,然后通过钻头并在钻柱和井的钻孔之间的环空中循环。 传感器采集测量读数,因为它们通过环形空间被泵浦。 传感器优选地与从井中返回的泥浆分开,然后在感应读取单元处读取。 传感器模块由测量井下参数的半导体衬底提供,然后存储在表面上检索的日期。 半导体衬底优选地具有可以形成测量传感器和电路的多个侧面,允许电路和传感器由较小的尺寸制成。 这种传感器包括温度传感器,三维污染计,它们也可用作压力传感器,感应压力传感器,倾斜传感器,加速度计,陀螺仪和辐射探测器。 传感器和电路优选地设置在球形半导体衬底上。
    • 67. 发明授权
    • Monitor for interventional procedures
    • 监测介入程序
    • US06264611B1
    • 2001-07-24
    • US09448644
    • 1999-11-24
    • Akira IshikawaNabuo TakedaSuzanne I. AhnSamuel S. AhnSteven R. HaysF. Andrew Gaffney
    • Akira IshikawaNabuo TakedaSuzanne I. AhnSamuel S. AhnSteven R. HaysF. Andrew Gaffney
    • A61B502
    • A61B5/02055A61B5/0031A61B5/0215A61B5/03A61B5/083A61B5/145A61B5/14532A61B5/6848A61B5/6851
    • A ball-shaped semiconductor monitoring device (150) having one or more transducer functions for use with an instrument that is insertable into a human body. In one disclosed embodiment, a needle (130) and modified stylet (140) are inserted into intraluminal body cavities for measuring fluid pressure. The modified stylet (140) has the monitoring device (150) attached to one end. The stylet (140) has a metal annulus (142) extending throughout its length and a communication wire (144) disposed therein. The wire (144) is surrounded by an insulator (146) to electrically isolate it from the stylet (140). A recessed cavity (148) is provided at the distal end of the stylet (140) to accommodate the ball monitoring device (150). A transducer (152) is integrated on the ball device (150) to measure such quantitative conditions as pressure. The ball (150) has a ground terminal (154) and a data terminal (156). The ground terminal (154) is electrically connected to the metal annulus (142) of the stylet (140) by a solder joint (158). The data terminal (156) is connected to the communication wire (144) by a contact (160). The instrument that carries the semiconductor device to a particular site within the body may be a catheter, guidewire, stylet, needle or any other insertable instrument. The transducer can be fabricated to sense pressure, fluid flow rate, temperature and other physiological parameters and physical conditions.
    • 一种具有一个或多个换能器功能的球形半导体监测装置(150),用于可插入人体内的仪器。 在一个所公开的实施例中,将针头(130)和改良的探针(140)插入管腔内空腔以测量流体压力。 修改的探针(140)具有附接到一端的监视装置(150)。 探针(140)具有贯穿其长度延伸的金属环(142)和设置在其中的连通线(144)。 导线(144)由绝缘体(146)包围,以使其与探针(140)电隔离。 在探针(140)的远端处设置有凹腔(148)以容纳球监视装置(150)。 换能器(152)集成在球装置(150)上以测量诸如压力的定量条件。 球(150)具有接地端子(154)和数据端子(156)。 接地端子(154)通过焊接接头(158)电连接到探针(140)的金属环(142)。 数据端子(156)通过触点(160)连接到通信线(144)。 携带半导体器件到体内特定位置的仪器可以是导管,导丝,通丝针,针或任何其它可插入的仪器。 传感器可以被制造以感测压力,流体流速,温度和其他生理参数和物理条件。
    • 68. 发明授权
    • Internal thermometer
    • 内部温度计
    • US06254548B1
    • 2001-07-03
    • US09448638
    • 1999-11-24
    • Akira IshikawaNabuo TakedaSuzanne I. AhnSamuel S. AhnSteven R. HaysF. Andrew Gaffney
    • Akira IshikawaNabuo TakedaSuzanne I. AhnSamuel S. AhnSteven R. HaysF. Andrew Gaffney
    • A61B500
    • A61B5/0008A61B5/0031
    • A miniature spherical-shaped internal temperature transponder. A temperature sensor (25) is fabricated in a spherical integrated transponder circuit (15) which may be placed in the human body by ingestion, implantation, or injection. In one aspect of the invention, a passive system is disclosed whereby an external monitoring station (13) generates an energy field using a magnetic field generator (19) which is coupled to a power coil (21) of the transponder (15). The power coil (21) passes power to a power regulator (23) to provide regulated power to all transponder (15) circuits. Temperature data obtained by the temperature sensor (25) is passed to a voltage controlled oscillator (27) for conversion into an RF signal. A mixing circuit (31) receives the RF temperature signal and modulates the temperature data signal onto an oscillator frequency from an RF oscillator (29). An RF amplifier (33) receives the modulated RF signal from the mixing circuit (31) and transmits it via an antenna (35) to the external monitor station 13 which is proximate to the transponder (15). The signal is received by an RF receiver (37) and processed using a CPU (39) to extract the measured temperature data, which can then be displayed to the operator on a display (41). The transponder (15) may be powered either by the external electromagnetic radiation source (19) or an internal battery.
    • 微型球形内部温度转发器。 温度传感器(25)制造在球形集成式应答器电路(15)中,其可以通过摄取,注入或注入而放置在人体内。 在本发明的一个方面,公开了一种无源系统,其中外部监测站(13)使用磁场发生器(19)产生能量场,该磁场发生器耦合到应答器(15)的功率线圈(21)。 电力线圈(21)将功率传递给功率调节器(23)以向所有应答器(15)电路提供稳定的电力。 由温度传感器(25)获得的温度数据被传送到压控振荡器(27)以转换成RF信号。 混合电路(31)接收RF温度信号,并将温度数据信号从RF振荡器(29)调制到振荡器频率上。 RF放大器(33)从混合电路(31)接收经调制的RF信号,并经由天线(35)将其发送到靠近应答器(15)的外部监视站13。 信号由RF接收器(37)接收,并使用CPU(39)进行处理,以提取测量的温度数据,然后可以将其显示给显示器(41)上的操作者。 应答器(15)可以由外部电磁辐射源(19)或内部电池供电。
    • 70. 发明授权
    • Magnetic recording medium
    • 磁记录介质
    • US5814394A
    • 1998-09-29
    • US597961
    • 1996-02-07
    • Akira IshikawaHidehiko NakayamaKazutaka Yamashita
    • Akira IshikawaHidehiko NakayamaKazutaka Yamashita
    • C09D5/23B32B33/00C09D101/08C09D127/00C09D127/06G11B5/66G11B5/702G11B5/706G11B5/716
    • G11B5/7023G11B5/70678G11B5/716Y10S428/90Y10T428/24942Y10T428/24975Y10T428/25
    • A magnetic recording medium comprising a support having thereon a plurality of magnetic layers comprising a first magnetic layer provided as an uppermost layer and a second magnetic layer provided adjacent to said first magnetic layer, wherein the first and second magnetic layers each comprises a magnetic powder and a binder containing a vinyl chloride resin and/or cellulose resin, the binder contents in the first magnetic layer and the second magnetic layer satisfy the relationship defined by the following formula (1), and the contents of the vinyl chloride resin and the cellulose resin in the first magnetic layer and the second magnetic layer satisfy the relationship defined by the following formula (2): 0.6 .ltoreq.(A-B)/B.ltoreq.6 (1) 0.4 .ltoreq.(C-D)/D.ltoreq.11 (2) wherein A represents the ratio of the binder content in the second magnetic layer to the magnetic powder content in the second magnetic layer; B represents the ratio of the binder content in the first magnetic layer to the magnetic powder content in the first magnetic layer; C represents the ratio of the total content of the vinyl chloride resin and the cellulose resin in the second magnetic layer to the magnetic powder content in the second magnetic layer; and D represents the ratio of the total content of the vinyl chloride resin and the cellulose resin in the first magnetic layer to the magnetic powder content in the first magnetic layer. The magnetic recording medium according to the present invention is excellent in surface smoothness, output characteristics, overwritability and running durability.
    • 一种磁记录介质,其特征在于,具有支撑体,所述支撑体具有多个磁性层,所述磁性层包括设置为最上层的第一磁性层和与所述第一磁性层相邻设置的第二磁性层,其中所述第一和第二磁性层各自包括磁性粉末和 含有氯乙烯树脂和/或纤维素树脂的粘合剂,第一磁性层和第二磁性层中的粘合剂含量满足下式(1)所定义的关系,氯乙烯树脂和纤维素树脂的含量 在第一磁性层和第二磁性层中满足由下式(2)定义的关系:0.6