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    • 65. 发明授权
    • Semiconductor device
    • 半导体器件
    • US06388341B2
    • 2002-05-14
    • US09835380
    • 2001-04-17
    • Fumitaka AraiYuji Takeuchi
    • Fumitaka AraiYuji Takeuchi
    • H01L23544
    • G03F9/70H01L23/544H01L2223/54453H01L2924/0002H01L2924/00
    • In a semiconductor device comprising patterns Pa1 through Pa3 which include (n+1) patterns (n is a natural number) for alignment arranged in a first direction which corresponds to a reading direction in pattern recognition, and patterns Pc1 formed in a mark proximity region Rc1, which include at least two patterns in at least the first direction, defining the pitches between the patterns Pa1 and Pa2 and between Pa2 and Pa3 as d1 and d2, respectively, defining the pitch between the patterns Pc1 in the first direction as dD, and defining the distance from the pattern Pa1 to the outside edge of the mark proximity region Rc1 as D, then, the dD is set so as to satisfy the relational expressions |(dD−d1)/d1|≧&agr; and |(dD−d2)/d2|&agr;(1>&agr;>0) in the mark proximity region Rc1 in which at least D≦d1+d2 is satisfied.
    • 在包括图案Pa1至Pa3的半导体器件中,包括用于在与图案识别中的读取方向相对应的第一方向上布置的用于对准的(n + 1)图案(n为自然数)的图案,以及形成在标记接近区域中的图案Pc1 Rc1至少在第一方向上包括至少两个图案,将图案Pa1和Pa2之间以及Pa2和Pa3之间的间距分别限定为d1和d2,将第一方向上的图案Pc1之间的间距限定为dD, 并且将从图案Pa1到标记接近区域Rc1的外边缘的距离定义为D,则dD被设置为满足关系式|(dD-d1)/ d1 |> =α和|(dD 在满足至少D <= d1 + d2的标记接近区域Rc1中,-d2)/ d2 |α(1>α> 0)。
    • 66. 发明授权
    • Semiconductor memory device having a plurality of memory cell
transistors arranged to constitute memory cell arrays
    • 半导体存储器件具有构成存储单元阵列的多个存储单元晶体管
    • US6157056A
    • 2000-12-05
    • US8627
    • 1998-01-16
    • Yuji TakeuchiToshiharu WatanabeSeiichi AritomeHiroshi WatanabeKazuhiro Shimizu
    • Yuji TakeuchiToshiharu WatanabeSeiichi AritomeHiroshi WatanabeKazuhiro Shimizu
    • G11C16/04H01L21/8247H01L27/115H01L29/788H01L29/792H01L29/708H01L21/336
    • H01L27/115
    • The semiconductor memory device comprises first and second memory cell rows each constructed by connecting a plurality of memory cell transistors, and third and fourth memory cell rows which are provided to be respectively adjacent to the first and second memory cell rows, such that element separation regions are respectively provided between adjacent memory cell rows. First and second transistors are connected between a drain or a source of the first memory cell row and a drain or a source of the second memory cell row. Gate electrodes of the first and third transistors are connected by a first gate line, and gate electrodes of the second and fourth transistors are connected by a second gate line. The first and second transistors are connected to a data line by a first contact. The third and fourth transistors are connected to a data line by a second contact. A first spacing element is connected between the first and second transistors and a second spacing element is connected between the third and fourth transistors, so that the distance between the first and second contacts is widened. The first contact is provided between the first transistor and the first spacing element. The second contact is provided between the fourth transistor and the second spacing element. The first spacing element is connected through the third gate line to the second spacing element.
    • 半导体存储器件包括通过连接多个存储单元晶体管构成的第一和第二存储单元行,以及分别设置成分别与第一和第二存储单元行相邻的第三和第四存储单元行,使得元件分离区 分别设置在相邻的存储单元行之间。 第一和第二晶体管连接在第一存储单元行的漏极或源极与第二存储单元行的漏极或源极之间。 第一和第三晶体管的栅极通过第一栅极线连接,第二和第四晶体管的栅电极通过第二栅极线连接。 第一和第二晶体管通过第一接触连接到数据线。 第三和第四晶体管通过第二接触连接到数据线。 第一间隔元件连接在第一和第二晶体管之间,第二间隔元件连接在第三和第四晶体管之间,使得第一和第二触点之间的距离变宽。 第一触点设置在第一晶体管和第一间隔元件之间。 第二触点设置在第四晶体管和第二间隔元件之间。 第一间隔元件通过第三栅极线连接到第二间隔元件。
    • 68. 发明授权
    • Tension member for belt and belt including the same
    • 带和带的张紧构件包括相同的
    • US5735763A
    • 1998-04-07
    • US680650
    • 1996-07-16
    • Hideaki KawaharaMasaki OchiaiEijiro NakashimaYuji Takeuchi
    • Hideaki KawaharaMasaki OchiaiEijiro NakashimaYuji Takeuchi
    • F16G1/28D02G3/26D02G3/44F16G1/08F16G5/06D02G3/28
    • F16G5/06D02G3/447F16G1/08D10B2101/06
    • The tension member for a belt of this invention is made from a glass cord. First twist yarns of this glass cord are obtained by paralleling and twisting a plurality of fiber bundles, each including a large number of glass filaments, by a predetermined first twist number. The fiber bundles are previously soaked with a treatment liquid including a mixture of rubber latex and an initial condensation product of resorcinol and formalin as a main component and then heated. The glass cord is fabricated by paralleling a predetermined number of the first twist yarns and twisting them by a predetermined final twist number, so as to squeeze and substantially eliminating spaces among the first twist yarns. Accordingly, the belt including this glass cord as the tension member can achieve good water resistance because externally intruding water is prevented from being held within the belt.
    • 用于本发明的带的张紧构件由玻璃帘线制成。 该玻璃帘线的第一捻纱通过以预定的第一捻数将多根玻璃纤维的多个纤维束并联并加捻而获得。 纤维束预先用包括橡胶胶乳和间苯二酚和福尔马林的初始缩合产物的混合物作为主要组分的处理液浸泡,然后加热。 玻璃帘线通过平行预定数量的第一加捻纱线并以预定的最终捻数扭转制造,以挤压并基本上消除第一加捻纱线之间的空间。 因此,包括作为张力构件的玻璃帘线的带可以实现良好的防水性,因为防止了外部侵入的水被保持在带内。