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    • 69. 发明授权
    • Method of removing a carbon-contaminated layer from a silicon substrate
surface for subsequent selective silicon epitaxial growth thereon and
apparatus for selective silicon epitaxial growth
    • 从硅衬底表面去除碳污染层以用于其后的选择性硅外延生长的方法以及用于选择性硅外延生长的设备的方法
    • US6107197A
    • 2000-08-22
    • US781821
    • 1997-01-10
    • Tatsuya Suzuki
    • Tatsuya Suzuki
    • C30B25/02C30B29/06H01L21/20H01L21/205H01L21/285H01L21/302H01L21/304H01L21/306C30B25/04
    • H01L21/02046H01L21/02381H01L21/02532H01L21/0262H01L21/02658H01L21/28525Y10S438/906
    • A method of removing a carbon-contaminated layer from a silicon substrate surface before a silicon epitaxial growth on the silicon substrate surface. A carbon-contaminated layer on the silicon substrate is exposed to a chlorine radical to cause a chemical reaction of the chlorine radical with carbon atoms of the carbon-contaminated layer to generate chlorine carbide to form chlorine carbide for removal of the carbon-contaminated layer from the silicon substrate surface, wherein the chlorine radical has been generated by passing a chlorine gas through a heating filament so that the chlorine radical is generated at a much higher generation efficiency than when the chlorine radical were generated by using a deep ultraviolet ray. This means that the use of the filament for generating the chlorine radical at the higher generation efficiency results in a larger amount of the chlorine radical to be irradiated onto the carbon-contaminated layer and then reacted with carbon atoms to generate chlorine carbide at a higher efficiency whereby carbon on the silicon substrate surface or the carbon-contaminated layer may be removed therefrom at a higher efficiency. The epitaxial growth of the silicon layer on the carbon-free or carbon pile-up free silicon substrate surface results in the epitaxial silicon layer having a high crystal quality or crystal perfection.
    • 在硅衬底表面上的硅外延生长之前从硅衬底表面去除碳污染层的方法。 在硅衬底上的碳污染层暴露于氯自由基以引起氯自由基与碳污染层的碳原子的化学反应,以产生碳化碳以形成氯碳化物以从碳污染层中去除碳污染层 硅衬底表面,其中通过使氯气通过加热丝而产生氯自由基,使得以比通过使用深紫外线产生氯自由基更高的发生效率产生氯自由基。 这意味着在更高的发电效率下使用丝来产生氯自由基导致较大量的氯自由基被照射到碳污染的层上,然后与碳原子反应以产生更高效率的碳化碳 由此可以以更高的效率从硅衬底表面或碳污染层上除去碳。 在无碳或无碳堆积自由硅衬底表面上的硅层的外延生长导致具有高晶体质量或晶体完美性的外延硅层。