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61. 发明申请

US20090289717A1 RADIO FREQUENCY (RF) POWER AMPLIFIER AND RF POWER AMPLIFIER APPARATUS 有权
标题翻译：射频（RF）功率放大器和射频功率放大器设备
公开(公告)号：US20090289717A1
公开(公告)日：2009-11-26
申请号：US12412728
申请日：2009-03-27
申请人： Satoshi TANAKA , Tomonori TANOUE
发明人： Satoshi TANAKA , Tomonori TANOUE
IPC分类号： H03F3/16
CPC分类号： H03F3/19 , H03F1/0261 , H03F3/245 , H03F2200/393 , H03F2200/451
摘要： An RF power amplifier has a final-stage amplifier stage which generates an RF transmit output signal, a signal detector which detects an RF transmit output level, a first detector, a second detector and a control circuit. The final-stage amplifier stage includes a transistor and a load element and performs saturation type nonlinear amplification and non-saturation type linear amplification. The first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification. The second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification.
摘要翻译： RF功率放大器具有产生RF发射输出信号的最终级放大器级，检测RF发射输出电平的信号检测器，第一检测器，第二检测器和控制电路。最后一级放大器级包括晶体管和负载元件，并执行饱和型非线性放大和非饱和型线性放大。第一检测器和控制电路保持RF发射输出信号相对于饱和型非线性放大在天线处的负载变化大致恒定。第二检测器和控制电路在非饱和型线性放大时相对于天线的过载状态减小了最终级晶体管的输出电压的增加。

62. 发明申请

US20090199153A1 EXPOSURE CONDITION SETTING METHOD AND PROGRAM FOR SETTING EXPOSURE CONDITIONS 审中-公开
标题翻译：暴露条件设置方法和设置接触条件的程序
公开(公告)号：US20090199153A1
公开(公告)日：2009-08-06
申请号：US12363058
申请日：2009-01-30
申请人： Satoshi USUI , Satoshi TANAKA
发明人： Satoshi USUI , Satoshi TANAKA
IPC分类号： G06F17/50
CPC分类号： G03F7/70625 , G03F7/705
摘要： There is provided an exposure condition setting method concerning an example of the present invention, the method includes inputting design layout data, extracting a plurality of design patterns having a predetermined dimension from the input design layout data, obtaining a transfer pattern transferred to a transfer target film by exposure of a mask pattern from the mask pattern associated with the extracted patterns, and calculating a dimensional fluctuation amount of the transfer pattern and a design value of the design pattern, obtaining a distribution of the number of the extracted design patterns associated with the dimensional fluctuation amount of the extracted design pattern, and setting exposure conditions in such a manner that the dimensional fluctuation amount of the extracted design pattern associated with a reference value in the distribution of the number of design patterns satisfies allowance conditions.
摘要翻译：提供了关于本发明的实例的曝光条件设置方法，该方法包括输入设计布局数据，从输入设计布局数据中提取具有预定尺寸的多个设计图案，获得传送到传送目标的传送图案通过从与提取的图案相关联的掩模图案中曝光掩模图案并计算传送图案的尺寸变化量和设计图案的设计值，获得与所提取的图案相关联的提取的设计图案的数量的分布提取的设计图案的尺寸变化量，以及设置曝光条件，使得与设计图案数量的分布中的参考值相关联的提取的设计图案的尺寸变化量满足允许条件。

63. 发明申请

US20090170335A1 PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, CONTROL PROGRAM AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开
标题翻译：等离子体蚀刻方法，等离子体蚀刻装置，控制程序和计算机可读存储介质
公开(公告)号：US20090170335A1
公开(公告)日：2009-07-02
申请号：US12341205
申请日：2008-12-22
申请人： Satoshi TANAKA , Yoshinobu Ooya , Fumio Yamazaki
发明人： Satoshi TANAKA , Yoshinobu Ooya , Fumio Yamazaki
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116
摘要： A plasma etching method for performing an etching process for forming on an insulating film formed on a substrate a hole shape having a ratio of depth to opening width of more than 20. The hole shape is formed on the insulating film by converting processing gas containing at least C4F6 gas and C6F6 gas into a plasma. A flow rate ratio of the C4F6 gas to the C6F6 gas (C4F6 gas flow rate/C6F6 gas flow rate) ranges from 2 to 11.
摘要翻译：一种等离子体蚀刻方法，用于在形成在基板上的绝缘膜上形成具有深度与开口宽度的比率大于20的孔形状的蚀刻工艺。通过转换处理气体而形成在孔绝缘膜上的孔形状，将最少的C4F6气体和C6F6气体进入等离子体。 C4F6气体与C6F6气体的流量比（C 4 F 6气体流量/ C 6 F 6气体流量）为2〜11。

64. 发明申请

US20090077292A1 DATA PROCESSING APPARATUS, METHOD OF CONTROLLING TERMINATION VOLTAGE OF DATA PROCESSING APPARATUS, AND IMAGE FORMING APPARATUS 有权
标题翻译：数据处理装置，控制数据处理装置的终止电压的方法和图像形成装置
公开(公告)号：US20090077292A1
公开(公告)日：2009-03-19
申请号：US12206188
申请日：2008-09-08
申请人： Satoshi TANAKA
发明人： Satoshi TANAKA
IPC分类号： G06F13/24
CPC分类号： G03G15/5004
摘要： A processing unit carries out a predetermined data processing on the data in a storage unit. The storage unit is connected to the processing unit with a plurality of connecting lines. A voltage generating unit is connected to each of the connecting lines via a corresponding termination resistor and that generates a termination voltage to be applied to the connecting lines. An interrupting unit is connected between the connecting lines and the termination resistors, and it applies or does not apply the termination voltage to the connecting lines depending on a data processing state of the processing unit.
摘要翻译：处理单元对存储单元中的数据执行预定的数据处理。存储单元与多个连接线连接到处理单元。电压产生单元经由相应的终端电阻连接到每条连接线，并产生施加到连接线的终止电压。中断单元连接在连接线和终端电阻之间，并根据处理单元的数据处理状态对连接线施加或不施加终止电压。

65. 发明申请

US20090026170A1 PLASMA PROCESSING APPARATUS AND METHOD OF PLASMA DISTRIBUTION CORRECTION 有权
标题翻译：等离子体处理装置和等离子体分布校正方法
公开(公告)号：US20090026170A1
公开(公告)日：2009-01-29
申请号：US12046094
申请日：2008-03-11
申请人： Satoshi TANAKA , Chishio Koshimizu , Manabu Iwata , Naoki Matsumoto , Toru Ito
发明人： Satoshi TANAKA , Chishio Koshimizu , Manabu Iwata , Naoki Matsumoto , Toru Ito
IPC分类号： G01R31/00 , C23F1/08
CPC分类号： H01J37/32706 , H01J37/32091
摘要： A plasma processing apparatus can prevent a sheath from becoming distorted, simplify a configuration of the apparatus, and prevent particles from attaching to a substrate. The plasma processing apparatus performs plasma processing on the substrate. A housing chamber houses the substrate. A mounting stage is disposed within the housing chamber and mounted with the substrate. An annular member is disposed in the mounting stage. A power supply unit supplies high-frequency power to the mounting stage. An observation unit optically observes the distribution of the plasma. A voltage applying unit applies a DC voltage to the annular member. A control unit sets the value of the DC voltage to be applied based on the observed plasma distribution.
摘要翻译：等离子体处理装置可以防止护套变形，简化装置的构造，并防止颗粒附着于基板。等离子体处理装置对基板进行等离子体处理。容纳室容纳衬底。安装台设置在壳体室内并与基板一起安装。环形构件设置在安装台中。电源单元为安装级提供高频电源。观察单元光学地观察等离子体的分布。电压施加单元向环形构件施加直流电压。控制单元基于观察到的等离子体分布来设定要施加的DC电压的值。

66. 发明申请

US20080301621A1 MASK PATTERN CORRECTING METHOD 有权
标题翻译：掩模图校正方法
公开(公告)号：US20080301621A1
公开(公告)日：2008-12-04
申请号：US12129167
申请日：2008-05-29
申请人： Kazuya FUKUHARA , Tatsuhiko HIGASHIKI , Toshiya KOTANI , Satoshi TANAKA , Takashi SATO , Akiko MIMOTOGI , Masaki SATAKE
发明人： Kazuya FUKUHARA , Tatsuhiko HIGASHIKI , Toshiya KOTANI , Satoshi TANAKA , Takashi SATO , Akiko MIMOTOGI , Masaki SATAKE
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： In a model-based OPC which makes a suitable mask correction for each mask pattern using an optical image intensity simulator, a mask pattern is divided into subregions and the model of optical image intensity simulation is changed according to the contents of the pattern in each subregion. When the minimum dimensions of the mask pattern are smaller than a specific threshold value set near the exposure wavelength, the region is calculated using a high-accuracy model and the other regions are calculated using a high-speed model.
摘要翻译：在基于模型的OPC中，使用光学图像强度模拟器对每个掩模图案进行适当的掩模校正，将掩模图案划分为子区域，并且根据每个子区域中的图案的内容来改变光学图像强度模拟模型。当掩模图案的最小尺寸小于在曝光波长附近设置的特定阈值时，使用高精度模型计算该区域，并且使用高速模型计算其它区域。

67. 发明申请

US20080050269A1 ALUMINUM PIPING MATERIAL FOR AUTOMOBILE HEAT EXCHANGER 审中-公开
标题翻译：用于汽车换热器的铝管材料
公开(公告)号：US20080050269A1
公开(公告)日：2008-02-28
申请号：US11843280
申请日：2007-08-22
申请人： Satoshi TANAKA , Junji NINOMIYA , Toshiyuki KAKINOKI , Kazumi KATO
发明人： Satoshi TANAKA , Junji NINOMIYA , Toshiyuki KAKINOKI , Kazumi KATO
IPC分类号： C22C21/00
CPC分类号： C22C21/00 , C22F1/04 , C22F1/05
摘要： An aluminum piping material for an automobile heat exchanger, containing 0.05 to 0.4 mass % of Si, 0.05 to 0.4 mass % of Fe, 0.6 mass % or lower of Cu. 0.15 to 1.5 mass % of Mn, 0.05 to 0.3 mass % of Ti, and 0.05 to 0.3 mass % of V, with the balance being Al and inevitable impurities, wherein the aluminum piping material is excellent in corrosion resistance.
摘要翻译：一种汽车用热交换器用铝管材，含有0.05〜0.4质量％的Si，0.05〜0.4质量％的Fe，0.6质量％以下的Cu。 Mn为0.15〜1.5质量％，Ti为0.05〜0.3质量％，V为0.05〜0.3质量％，余量为Al和不可避免的杂质，其中，铝管材具有优异的耐腐蚀性。

68. 发明申请

US20070281652A1 TRANSMITTER CIRCUITS AND APPARATUS OF WIRELESS APPLICATION 有权
标题翻译：发射机电路及无线应用设备
公开(公告)号：US20070281652A1
公开(公告)日：2007-12-06
申请号：US11755273
申请日：2007-05-30
申请人： Satoshi TANAKA , Yukinori Akamine
发明人： Satoshi TANAKA , Yukinori Akamine
IPC分类号： H04B7/00
CPC分类号： H03G1/0088 , H03G3/004
摘要： In conventional polar-loop transmitter circuits, using two feedback circuits intended to control the amplitude in an open loop and phase of a power output in closed loop, respectively, during transmission, causes current consumption to increase during delivery of a small power output. Therefore, a complex table has to be prepared in order to correct the nonlinearities in the amplitude-to-amplitude characteristic of the power amplifier and the amplitude-to-phase characteristic thereof. In order to reduce the current consumption required for the delivery of a moderate or small power output, a polar-loop transmitter circuit in which two feedback circuits intended to control the amplitude and phase of the power output respectively are active when the power amplifier delivers a large power output exhibiting strong nonlinearity, and when the power amplifier delivers a moderate or small power output, the amplitude of the power output is controlled in the open loop.
摘要翻译：在常规的极性环路发射机电路中，在传输期间，分别使用两个反馈电路来分别控制开环中的幅度和闭环中的功率输出的相位，从而在输出小功率输出期间使电流消耗增加。因此，为了校正功率放大器的幅度 - 幅度特性的非线性及其幅相特性，必须准备复杂的表格。为了降低传递中等或较小功率输出所需的电流消耗，一个极环回路发射器电路，其中分别用于控制功率输出的幅度和相位的两个反馈电路在功率放大器输出大功率输出显示强非线性，当功率放大器输出中等或较小的功率输出时，功率输出的幅度在开环中被控制。

69. 发明申请

US20060190921A1 Manufacturing Method of Semiconductor Device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20060190921A1
公开(公告)日：2006-08-24
申请号：US11381262
申请日：2006-05-02
申请人： Sachiko KOBAYASI , Toshiba KOTANI , Satoshi TANAKA , Susumu WATANABE , Mitsuhiro YANO
发明人： Sachiko KOBAYASI , Toshiba KOTANI , Satoshi TANAKA , Susumu WATANABE , Mitsuhiro YANO
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F7/70441
摘要： A pattern correction method executed by a computer includes a first correction and a second correction. The first correction is executed by calculating a correction value, in consideration for an optical proximity effect, for edges (first edges) meeting a condition among the edges constituting a designed pattern. Subsequently, The second correction is executed for an edge (second edge) which does not meet the condition, by use of the correction value of any one of the edges (first edges) adjacent to the second edge among the first edges for which the first correction is executed, thus connecting the corrected first edge and the corrected second edge by a line segment. The pattern is corrected to a shape suitable for a mask drawing and a check with simple processing.
摘要翻译：由计算机执行的图案校正方法包括第一校正和第二校正。对于构成设计图案的边缘中满足条件的边缘（第一边缘），考虑光学邻近效应来计算校正值来执行第一校正。随后，对于不符合条件的边缘（第二边缘），通过使用与第一边缘相邻的边缘（第一边缘）中的任何一个边缘（第一边缘）的第一边缘的第一边缘执行校正，从而将校正的第一边缘和校正的第二边缘连接到线段。该图案被校正为适于掩模绘图和具有简单处理的检查的形状。

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