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61. 发明申请

US20090097365A1 Magnetic layer, method of forming the magnetic layer, information storage device including the magnetic layer, and method of manufacturing the information storage device 有权
标题翻译：磁性层，形成磁性层的方法，包括磁性层的信息存储装置以及信息存储装置的制造方法
公开(公告)号：US20090097365A1
公开(公告)日：2009-04-16
申请号：US12073105
申请日：2008-02-29
申请人： Sung-chul Lee , Sun-ae Seo , Young-Jin Cho , Kwang-seok Kim
发明人： Sung-chul Lee , Sun-ae Seo , Young-Jin Cho , Kwang-seok Kim
IPC分类号： G11B11/00 , G11B5/84 , H01F41/14
CPC分类号： G11B5/64 , G11B5/66 , G11B5/82 , G11C11/14 , G11C19/0841 , H01F41/32 , Y10S977/933 , Y10T29/49002
摘要： Provided are a magnetic layer, a method of forming the magnetic layer, an information storage device, and a method of manufacturing the information storage device. The information storage device may include a magnetic track having a plurality of magnetic domains, a current supply element connected to the magnetic layer and a reading/writing element. The magnetic track includes a hard magnetic track, and the hard magnetic track has a magnetization easy-axis extending in a direction parallel to a width of the hard magnetic track.
摘要翻译：提供了磁性层，形成磁性层的方法，信息存储装置以及信息存储装置的制造方法。信息存储装置可以包括具有多个磁畴的磁道，连接到磁性层的电流源元件和读/写元件。磁轨包括硬磁道，并且硬磁轨具有沿与硬磁道的宽度平行的方向延伸的易磁化磁化。

62. 发明申请

US20090073859A1 Magnetic tracks, information storage devices using magnetic domain wall movement, and methods of manufacturing the same 有权
标题翻译：磁轨，使用磁畴壁运动的信息存储装置及其制造方法
公开(公告)号：US20090073859A1
公开(公告)日：2009-03-19
申请号：US12155896
申请日：2008-06-11
申请人： Young-jin Cho , Sung-chul Lee , Kwang-seok Kim , Ji-young Bae , Sun-ae Seo , Chang-won Lee
发明人： Young-jin Cho , Sung-chul Lee , Kwang-seok Kim , Ji-young Bae , Sun-ae Seo , Chang-won Lee
IPC分类号： G11B3/00
CPC分类号： G11C19/0841 , G11C11/14
摘要： Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions.
摘要翻译：提供信息存储装置及其制造方法。信息存储装置的磁道包括其中至少一个磁畴形成区域和至少一个磁畴壁形成区域沿长度方向交替布置的磁性层。所述至少一个磁畴形成区域相对于所述至少一个磁畴壁形成区域具有不同的磁各向异性能量。中间层形成在磁性层下面。中间层包括至少一个第一材料区域和至少一个第二材料区域。所述至少一个第一材料区域和所述至少一个第二材料区域中的每一个对应于所述至少一个磁畴形成区域和所述至少一个磁畴壁形成区域中的一个。

63. 发明授权

US07379322B2 Amorphous high-k thin film and manufacturing method thereof 失效
标题翻译：非晶高k薄膜及其制造方法
公开(公告)号：US07379322B2
公开(公告)日：2008-05-27
申请号：US11354013
申请日：2006-02-15
申请人： Yo-sep Min , Young-jin Cho
发明人： Yo-sep Min , Young-jin Cho
IPC分类号： G11C11/22
CPC分类号： C23C16/40 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/02178 , H01L21/02186 , H01L21/02194 , H01L21/0228 , H01L21/3141 , H01L21/31616 , H01L21/31691 , H01L28/55
摘要： An amorphous high-k thin film for a semiconductor device and a manufacturing method thereof are provided. The amorphous high-k thin film includes Bi, Ti, Al, and O. Since a BTAO based amorphous dielectric thin film is used as a dielectric material of a DRAM capacitor, a dielectric constant is more than 25, and an increase of a leakage current caused in reducing a physical thickness of the dielectric thin film can be prevented. Accordingly, it is very useful for the integration of the semiconductor device.
摘要翻译：提供了一种用于半导体器件的非晶高k薄膜及其制造方法。无定形高k薄膜包括Bi，Ti，Al和O.由于使用基于BTAO的非晶介质薄膜作为DRAM电容器的介电材料，介电常数大于25，并且泄漏增加可以防止在减小电介质薄膜的物理厚度时引起的电流。因此，对于半导体器件的集成是非常有用的。

64. 发明授权

US07374994B2 Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film 失效
标题翻译：铋钛氧化硅，铋钛氧化硅薄膜，以及薄膜形成方法
公开(公告)号：US07374994B2
公开(公告)日：2008-05-20
申请号：US11136456
申请日：2005-05-25
申请人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
发明人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
IPC分类号： H01L21/8242
CPC分类号： H01L21/28185 , C01G29/006 , C01P2002/36 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2002/89 , C01P2004/03 , C01P2004/04 , C01P2004/80 , C01P2006/40 , C04B35/16 , C04B35/475 , C04B35/6264 , C04B2235/3232 , C04B2235/3298 , C04B2235/3418 , C04B2235/441 , C04B2235/444 , C04B2235/658 , C04B2235/6581 , C04B2235/76 , H01L21/28194 , H01L21/31691 , H01L28/55 , H01L29/516 , H01L29/517
摘要： A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.
摘要翻译：具有烧绿石相的铋钛氧化硅，由氧化铋钛氧化物形成的薄膜，用于形成铋钛氧化硅薄膜的方法，用于半导体器件的电容器和晶体管，所述半导体器件包括铋钛 - 氧化硅薄膜以及采用电容器和/或晶体管的电子器件。铋钛氧化硅具有良好的介电性能，并且是热和化学稳定的。铋钛氧化硅薄膜可以有效地用作半导体器件中的电容器或晶体管的栅极电介质膜的电介质膜。可以使用具有铋钛 - 氧化硅膜的电容器和/或晶体管来制造具有良好电性能的各种电子器件。

65. 发明授权

US07365228B2 Method for producing unsaturated fatty acids 有权
标题翻译：生产不饱和脂肪酸的方法
公开(公告)号：US07365228B2
公开(公告)日：2008-04-29
申请号：US11344716
申请日：2006-02-01
申请人： Hyun Jong Shin , Byung Yul Choi , Young Jin Cho , Yeon Shick Yoo , Young Hyun Choi , Duk Ki Kim , Joo Yeon Park
发明人： Hyun Jong Shin , Byung Yul Choi , Young Jin Cho , Yeon Shick Yoo , Young Hyun Choi , Duk Ki Kim , Joo Yeon Park
IPC分类号： C07C51/16
CPC分类号： B01J23/8885 , B01J8/067 , B01J23/002 , B01J35/0006 , B01J2208/025 , B01J2523/00 , C07C51/252 , C07C57/04 , B01J2523/17 , B01J2523/43 , B01J2523/55 , B01J2523/56 , B01J2523/68 , B01J2523/69
摘要： Disclosed is a method for producing unsaturated fatty acids from unsaturated aldehydes by means of fixed-bed catalytic partial oxidation in a shell-and-tube reactor, characterized in that the reactor includes a reaction zone for producing unsaturated fatty acids, the reaction zone having an inactive material layer inserted into a position where a hot spot is to be generated in a reaction tube. A fixed-bed shell-and-tube reactor for use in the above method is also disclosed. According to the present invention, at least one layer of inactive material is packed at the point of a hot spot to control the hot spot temperature efficiently, thereby increasing the lifetime of a catalyst and producing unsaturated fatty acids with high yield.
摘要翻译：公开了一种在壳管式反应器中通过固定床催化部分氧化从不饱和醛生产不饱和脂肪酸的方法，其特征在于反应器包括用于生产不饱和脂肪酸的反应区，反应区具有插入在反应管中要产生热点的位置的非活性材料层。还公开了用于上述方法的固定床管壳式反应器。根据本发明，在热点处填充至少一层非活性材料，以有效地控制热点温度，从而提高催化剂的寿命并以高产率生产不饱和脂肪酸。

66. 发明申请

US20080013369A1 Magnetic tunneling junction based logic circuits an methods of operating the same 有权
标题翻译：基于磁隧道结的逻辑电路的操作方法
公开(公告)号：US20080013369A1
公开(公告)日：2008-01-17
申请号：US11654002
申请日：2007-01-17
申请人： Tae-wan Kim , Kee-won Kim , Hyung-soon Shin , Seung-jun Lee , In-jun Hwang , Young-jin Cho
发明人： Tae-wan Kim , Kee-won Kim , Hyung-soon Shin , Seung-jun Lee , In-jun Hwang , Young-jin Cho
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , H03K19/18 , H03K19/21
摘要： MTJ cell based logic circuits and MTJ cell drivers having improved operating speeds compared to the conventional art, and operating methods thereof are described. An MTJ cell driver may include a lower electrode, an MTJ cell on the lower electrode, an upper electrode on the MTJ cell, and first through third input lines arranged in parallel above the upper electrode
摘要翻译：描述了与传统技术相比具有改进的操作速度的基于MTJ单元的逻辑电路和MTJ单元驱动器及其操作方法。 MTJ单元驱动器可以包括下电极，下电极上的MTJ单元，MTJ单元上的上电极以及平行于上电极上方布置的第一至第三输入线

67. 发明申请

US20070195588A1 Magnetic memory devices using magnetic domain motion 有权
标题翻译：使用磁畴运动的磁存储器件
公开(公告)号：US20070195588A1
公开(公告)日：2007-08-23
申请号：US11707002
申请日：2007-02-16
申请人： Tae-wan Kim , Kee-won Kim , Young-Jin Cho , In-Jun Hwang
发明人： Tae-wan Kim , Kee-won Kim , Young-Jin Cho , In-Jun Hwang
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C19/0808 , G11C19/0841 , G11C2213/77
摘要： A magnetic memory device includes a recording layer, a reference layer, a first input portion and a second input portion. The recording layer has perpendicular magnetization direction and a plurality of magnetic domains, and the reference layer corresponds to a portion of the recording layer and has a pinned magnetization direction. The recording layer has a data storage cell wherein a plurality of data bit regions each including a magnetic domain are formed. The magnetic domain corresponds to an effective size of the reference layer. The first input portion inputs at least one of a writing signal and a reading signal. The second input portion is electrically connected to the recording layer and inputs a magnetic domain motion signal in order to move data stored in a data bit region of the recording layer to an adjoining data bit region.
摘要翻译：磁存储器件包括记录层，参考层，第一输入部分和第二输入部分。记录层具有垂直磁化方向和多个磁畴，并且参考层对应于记录层的一部分并具有钉扎磁化方向。记录层具有数据存储单元，其中形成各自包括磁畴的多个数据位区域。磁畴对应于参考层的有效尺寸。第一输入部分输入写入信号和读取信号中的至少一个。第二输入部分电连接到记录层并输入磁畴运动信号，以便将存储在记录层的数据位区域中的数据移动到相邻的数据位区域。

68. 发明申请

US20070195587A1 Magnetic memory device using magnetic domain motion 有权
标题翻译：磁存储器件采用磁畴运动
公开(公告)号：US20070195587A1
公开(公告)日：2007-08-23
申请号：US11706988
申请日：2007-02-16
申请人： Tae-wan Kim , Young-jin Cho , Kee-won Kim , In-jun Hwang
发明人： Tae-wan Kim , Young-jin Cho , Kee-won Kim , In-jun Hwang
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , G11C19/0808 , G11C19/0841
摘要： A magnetic memory device is provided. The magnetic memory device may include a memory track in which a plurality of magnetic domains is formed so that data bits, each of which may be a magnetic domain, are stored in an array. The memory track may be formed of an amorphous soft magnetic material.
摘要翻译：提供磁存储器件。磁存储器件可以包括其中形成多个磁畴的存储器轨道，使得其中每一个可以是磁畴的数据位被存储在阵列中。存储器轨道可以由非晶软磁材料形成。

69. 发明授权

US07105401B2 Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the same 失效
标题翻译：半导体装置用电容器及其制造方法以及使用该半导体装置的电子装置
公开(公告)号：US07105401B2
公开(公告)日：2006-09-12
申请号：US10930953
申请日：2004-09-01
申请人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
IPC分类号： H01L21/8242
CPC分类号： H01L28/56 , H01L21/3141 , H01L21/321 , H01L27/0629 , H01L28/55 , H01L28/65
摘要： A capacitor for use in a semiconductor device, a method of fabricating the capacitor, and an electronic device adopting the capacitor, wherein the capacitor includes upper and lower electrodes, each formed of a platinum group metal; a thin dielectric layer disposed between the upper and lower electrodes; and a buffer layer disposed between the lower electrode and the thin dielectric layer, the buffer layer including a metal oxide of Group 3, 4, or 13. In an embodiment, the method of fabricating includes absorbing CO on a surface of a lower electrode of a platinum group metal, placing the lower electrode under a reducing atmosphere to produce a lattice oxygen, using the lattice oxygen to form a thin dielectric layer by performing an ALD process using a precursor for the thin dielectric layer, and forming an upper electrode of a platinum group metal on the thin dielectric layer.
摘要翻译：一种用于半导体器件的电容器，制造该电容器的方法以及采用该电容器的电子器件，其中该电容器包括由铂族金属形成的上下电极; 设置在上电极和下电极之间的薄介电层; 以及设置在下电极和薄电介质层之间的缓冲层，缓冲层包括第3,4或13族的金属氧化物。在一个实施方案中，制造方法包括在下电极的表面上吸收CO 铂族金属，将下电极置于还原气氛下以产生晶格氧，使用晶格氧通过使用用于薄介电层的前体进行ALD工艺形成薄介电层，并形成上电极铂族金属在薄介电层上。

70. 发明申请

US20050272200A1 Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film 失效
公开(公告)号：US20050272200A1
公开(公告)日：2005-12-08
申请号：US11136456
申请日：2005-05-25
申请人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
发明人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
IPC分类号： C01B33/00 , C01G29/00 , C04B35/475 , C23C14/06 , C23C16/42 , H01L21/02 , H01L21/28 , H01L21/316 , H01L21/8242 , H01L27/108 , H01L29/51 , H01L21/473
CPC分类号： H01L21/28185 , C01G29/006 , C01P2002/36 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2002/89 , C01P2004/03 , C01P2004/04 , C01P2004/80 , C01P2006/40 , C04B35/16 , C04B35/475 , C04B35/6264 , C04B2235/3232 , C04B2235/3298 , C04B2235/3418 , C04B2235/441 , C04B2235/444 , C04B2235/658 , C04B2235/6581 , C04B2235/76 , H01L21/28194 , H01L21/31691 , H01L28/55 , H01L29/516 , H01L29/517
摘要： A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

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