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61. 发明授权

US08592471B2 Substituted phenylureas and phenylamides as vanilloid receptor ligands 有权
公开(公告)号：US08592471B2
公开(公告)日：2013-11-26
申请号：US12775235
申请日：2010-05-06
申请人： Robert Frank , Gregor Bahrenberg , Thomas Christoph , Klaus Schiene , Jean De Vry , Nils Damann , Sven Frormann , Bernhard Lesch , Jeewoo Lee , Yong-Soo Kim , Myeong-Seop Kim , Derek Saunders , Hannelore Stockhausen
发明人： Robert Frank , Gregor Bahrenberg , Thomas Christoph , Klaus Schiene , Jean De Vry , Nils Damann , Sven Frormann , Bernhard Lesch , Jeewoo Lee , Yong-Soo Kim , Myeong-Seop Kim , Derek Saunders , Hannelore Stockhausen
IPC分类号： A61K31/41 , C07D231/12
CPC分类号： C07D231/12 , C07D249/08 , C07D401/04 , C07D405/06 , C07D417/06
摘要： The invention relates to substituted phenylureas and phenylamides, to processes for the preparation thereof, to pharmaceutical compositions containing these compounds and also to the use of these compounds for preparing pharmaceutical compositions.

62. 发明授权

US08347803B2 Roll suppression device for offshore structure 有权
标题翻译：用于海上结构的滚压抑制装置
公开(公告)号：US08347803B2
公开(公告)日：2013-01-08
申请号：US12722712
申请日：2010-03-12
申请人： Jung Han Lee , Yong Soo Kim , Je Hyouk Woo , Dae Woong Kim , Sung Gun Park , Jong Ou Nahm , Byeong Won Park
发明人： Jung Han Lee , Yong Soo Kim , Je Hyouk Woo , Dae Woong Kim , Sung Gun Park , Jong Ou Nahm , Byeong Won Park
IPC分类号： B63B39/06
CPC分类号： B63B39/06
摘要： The present disclosure relates to a roll-suppression device for an offshore structure. The device includes a damping plate separated downward from a hull to be placed below a bottom of the offshore structure by a connection unit, so that the width of the damping plate may be effectively enlarged without occurrence of collision during shuttle docking or ship-to-ship operation. Accordingly, the device may maximize roll-suppression, as compared with a bilge-keel or a step, and a detachable design of the device facilitates ship construction or shore operation inside a drydock.
摘要翻译：本公开涉及一种用于海上结构的滚动抑制装置。该装置包括从船体向下分离以通过连接单元放置在海底结构的底部下方的阻尼板，使得可以有效地扩大阻尼板的宽度，而不会在穿梭对接或船舶对接期间发生碰撞船舶操作。因此，与舱底龙骨或台阶相比，该装置可以最大限度地进行滚动抑制，并且该装置的可拆卸设计便于船坞建造或干船坞内的岸上操作。

63. 发明授权

US08330215B2 Transistor including bulb-type recess channel and method for fabricating the same 失效
标题翻译：包括灯泡型凹槽的晶体管及其制造方法
公开(公告)号：US08330215B2
公开(公告)日：2012-12-11
申请号：US13244199
申请日：2011-09-23
申请人： Kwan-Yong Lim , Hong-Seon Yang , Dong-Sun Sheen , Se-Aug Jang , Heung-Jae Cho , Yong-Soo Kim , Min-Gyu Sung , Tae-Yoon Kim
发明人： Kwan-Yong Lim , Hong-Seon Yang , Dong-Sun Sheen , Se-Aug Jang , Heung-Jae Cho , Yong-Soo Kim , Min-Gyu Sung , Tae-Yoon Kim
IPC分类号： H01L29/66
CPC分类号： H01L29/66621 , H01L29/66553 , H01L29/78
摘要： A method for fabricating a transistor including a bulb-type recess channel includes forming a bulb-type recess pattern in a substrate, forming a gate insulating layer over the substrate and the bulb-type recess pattern, forming a first gate conductive layer over the gate insulating layer, forming a void movement blocking layer over the first gate conductive layer in the bulb-type recess pattern, and forming a second gate conductive layer over the void movement blocking layer and the first gate conductive layer.
摘要翻译：一种制造包括灯泡型凹槽的晶体管的方法，包括在衬底中形成灯泡型凹槽图案，在衬底上形成栅极绝缘层和灯泡型凹槽图案，在栅极上形成第一栅极导电层绝缘层，在所述灯泡型凹槽图案中的所述第一栅极导电层的上方形成空隙移动阻挡层，以及在所述空隙运动阻挡层和所述第一栅极导电层上方形成第二栅极导电层。

64. 发明授权

US08303089B2 Printer ink cartridge type connector 失效
标题翻译：打印机墨盒类型连接器
公开(公告)号：US08303089B2
公开(公告)日：2012-11-06
申请号：US12675817
申请日：2008-08-29
申请人： Yong-Soo Kim
发明人： Yong-Soo Kim
IPC分类号： B41J2/14 , B41J2/16 , H01R4/48
CPC分类号： B41J2/17513 , B41J2/1752 , B41J2/17526
摘要： Provided is an electrical connector for a print ink cartridge. The electrical connector includes a housing including a thin protrusion having a rectangle shape on one side portion thereof, a plurality of pin grooves spaced apart predetermined intervals from each in one side lower portion of the protrusion, a plurality of format ribs spaced apart predetermined intervals from each other in the other side of the protrusion, and coupling bosses having a wedge shape separately protruding on both sides of each of the ribs, a connection terminal serving as a torsion spring, the connecting terminal including a pin connector inserted into each of the pin grooves of the housing and fixed in a straight line orientation, a wound coupling insert fitted onto each of the coupling bosses to give elasticity thereto, a parallel extending from the coupling insert and along each of the ribs, a bend bent at a front end of the parallel, and a socket connector bent in a state where the socket connector is connected to the bend, the socket connector being connected to an external socket, and a cover integrally fixed to the housing by a plurality of coupling hooks disposed on the housing, the cover including pine connector grooves pressing the pin connector of the coupling terminal in a downward direction in a side surface of the cover.
摘要翻译：提供了一种用于打印墨盒的电连接器。所述电连接器包括壳体，所述壳体包括在其一侧部分上具有矩形形状的薄突起，与所述突起的一个侧下部中的每一个分隔开预定间隔的多个销槽，另外在突出部的另一侧相互连接，并且具有分别突出在每个肋的两侧上的楔形的连接凸起，连接端子用作扭转弹簧，该连接端子包括插入每个销中的销连接器壳体的凹槽并且以直线定向固定，缠绕的联接插入件装配到每个耦合凸台上以给予弹性，平行地从联接插入件延伸并且沿着每个肋条弯曲，弯曲在前端平行的插座连接器和插座连接器连接到弯头的状态下弯曲的插座连接器，插座连接器连接到一个外部插座和通过设置在壳体上的多个联接钩一体地固定到壳体的盖，盖包括在盖的侧表面中向下的方向将联接端子的销连接器按压的松连接器凹槽。

65. 发明申请

US20120267015A1 Non-Oriented Electrical Steel Sheet Having Superior Magnetic Properties and a Production Method Therefor 审中-公开
标题翻译：具有优异磁性的非取向电工钢板及其制造方法
公开(公告)号：US20120267015A1
公开(公告)日：2012-10-25
申请号：US13514342
申请日：2010-12-28
申请人： Jae-Hoon Kim , Jae-Kwan Kim , Yong-Soo Kim , Won-Seog Bong
发明人： Jae-Hoon Kim , Jae-Kwan Kim , Yong-Soo Kim , Won-Seog Bong
IPC分类号： C21D8/02 , C22C38/06 , C22C38/04 , C22C38/02 , C22B9/00
CPC分类号： C22C38/06 , C21D8/12 , C21D2211/004 , C22C38/001 , C22C38/002 , C22C38/004 , C22C38/008 , C22C38/02 , C22C38/04 , C22C38/14 , C22C38/60 , H01F1/16
摘要： Provided are: a non-oriented electrical steel sheet having outstanding magnetic properties and comprising, as percentages by weight, from 1.0 to 3.0% of Al, from 0.5 to 2.5% of Si, from 0.5 to 2.0% of Mn, from 0.001 to 0.004% of N, from 0.0005 to 0.004% of S and a balance of Fe and other unavoidably incorporated impurities, wherein the Al, Mn, N and S are included so as to satisfy the compositional formulae {[Al]+[Mn]}≦3.5, 0.002≦{[N]+[S]}≦0.006, 300≦{([Al]+[Mn])/([N]+[S])}≦1,400; and a production method therefor. By optimising the Al, Si, Mn, N and S added components in this way, the distribution density of coarse inclusions is increased, thereby making it possible to improve crystal-grain growth properties and domain wall mobility and so produce the highest grade of non-oriented electrical steel sheet having superior magnetic properties, low hardness, and superior customer workability and productivity.
摘要翻译：提供：具有优异的磁特性的非取向电工钢板，以重量百分数计，Al为1.0〜3.0％，Si为0.5〜2.5％，Mn为0.5〜2.0％，0.001〜0.004 N的百分比为0.0005〜0.004％，余量为Fe等不可避免地掺入的杂质，其中包含Al，Mn，N和S以满足组成式{[Al] + [Mn]}＆nlE ; 3.5，0.002＆nlE; {[N] + [S]}＆nlE; 0.006,300＆nlE; {（[Al] + [Mn]）/（[N] + [S]）}＆nlE; 1,400; 及其制造方法。通过以这种方式优化Al，Si，Mn，N和S添加的组分，粗大夹杂物的分布密度增加，从而可以提高晶粒生长性能和畴壁迁移率，从而产生最高等级的非 - 具有优异的磁特性，低硬度和优异的客户可加工性和生产率的电磁钢板。

66. 发明授权

US08237220B2 Semiconductor device with vertical channel transistor 有权
标题翻译：具有垂直沟道晶体管的半导体器件
公开(公告)号：US08237220B2
公开(公告)日：2012-08-07
申请号：US12776318
申请日：2010-05-07
申请人： Min-Gyu Sung , Heung-Jae Cho , Yong-Soo Kim , Kwan-Yong Lim , Se-Aug Jang
发明人： Min-Gyu Sung , Heung-Jae Cho , Yong-Soo Kim , Kwan-Yong Lim , Se-Aug Jang
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66666 , H01L27/10876 , H01L27/10891 , H01L29/7827
摘要： In a high speed vertical channel transistor, a pillar structure is formed over a substrate, a gate electrode surrounds an outer wall of a lower portion of the pillar structure; and a word line extends in a direction to partially contact an outer wall of the gate electrode. The word line shifts toward a side of the pillar structure resulting in increased transistor speed.
摘要翻译：在高速垂直沟道晶体管中，在衬底上形成柱结构，栅电极围绕柱结构的下部的外壁; 并且字线在与栅电极的外壁部分接触的方向上延伸。字线向柱结构的一侧移动，导致晶体管速度增加。

67. 发明授权

US08105909B2 Method of fabricating non-volatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US08105909B2
公开(公告)日：2012-01-31
申请号：US12894021
申请日：2010-09-29
申请人： Moon Sig Joo , Heung Jae Cho , Yong Soo Kim , Won Joon Choi
发明人： Moon Sig Joo , Heung Jae Cho , Yong Soo Kim , Won Joon Choi
IPC分类号： H01L21/4763
CPC分类号： H01L21/28273 , H01L21/3145 , H01L21/31645 , H01L21/76224 , H01L29/513 , H01L29/518 , H01L29/7881
摘要： A method of fabricating a non-volatile memory device includes: forming a tunnel insulation layer pattern and a floating gate electrode layer pattern over a semiconductor substrate; forming an isolation trench by etching an exposed portion of the semiconductor substrate so that the isolation trench is aligned with the tunnel insulation layer pattern and the floating gate electrode layer pattern; forming an isolation layer by filling the isolation trench with a filling insulation layer; forming a hafnium-rich hafnium silicon oxide layer over the isolation layer and the floating gate electrode layer pattern; forming a hafnium-rich hafnium silicon oxynitride layer by carrying out a first nitridation on the hafnium-rich hafnium silicon oxide layer; forming a silicon-rich hafnium silicon oxide layer over the hafnium-rich hafnium silicon oxynitride layer; forming a silicon-rich hafnium silicon oxynitride layer by carrying out a second nitridation on the silicon-rich hafnium silicon oxide layer; and forming a control gate electrode layer over the silicon-rich hafnium silicon oxynitride layer.
摘要翻译：制造非易失性存储器件的方法包括：在半导体衬底上形成隧道绝缘层图案和浮栅电极层图案; 通过蚀刻半导体衬底的暴露部分形成隔离沟槽，使得隔离沟槽与隧道绝缘层图案和浮栅电极层图案对准; 通过用填充绝缘层填充隔离沟槽来形成隔离层; 在隔离层和浮栅电极层图案上形成富铪铪氧化硅层; 通过在富铪铪氧化硅层上进行第一次氮化，形成富铪铪硅氮化物层; 在富铪铪硅氮化物层上形成富硅铪氧化硅层; 通过在富硅铪氧化硅层上进行第二次氮化，形成富硅铪硅氮氧化物层; 以及在所述富硅铪硅氮氧化物层上形成控制栅电极层。

68. 发明授权

US08008178B2 Method for fabricating semiconductor device with an intermediate stack structure 有权
标题翻译：具有中间堆叠结构的半导体器件的制造方法
公开(公告)号：US08008178B2
公开(公告)日：2011-08-30
申请号：US11952128
申请日：2007-12-07
申请人： Kwan-Yong Lim , Hong-Seon Yang , Heung-Jae Cho , Tae-Kyung Kim , Yong-Soo Kim , Min-Gyu Sung
发明人： Kwan-Yong Lim , Hong-Seon Yang , Heung-Jae Cho , Tae-Kyung Kim , Yong-Soo Kim , Min-Gyu Sung
IPC分类号： H01L21/4763
CPC分类号： H01L29/4925 , H01L21/28061 , H01L29/42324 , H01L29/4941 , H01L29/513 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a semiconductor device includes forming a first conductive layer over a substrate, forming an intermediate structure over the first conductive layer, the intermediate structure formed in a stack structure comprising at least a first metal layer and a nitrogen containing metal silicide layer, and forming a second conductive layer over the intermediate structure.
摘要翻译：一种制造半导体器件的方法包括在衬底上形成第一导电层，在第一导电层上形成中间结构，中间结构形成为至少包括第一金属层和含氮金属硅化物层的堆叠结构，以及在所述中间结构上形成第二导电层。

69. 发明申请

US20110193154A1 Non-volatile Memory Device 有权
标题翻译：非易失性存储器件
公开(公告)号：US20110193154A1
公开(公告)日：2011-08-11
申请号：US13089865
申请日：2011-04-19
申请人： Moon Sig Joo , Seung Ho Pyi , Yong Soo Kim
发明人： Moon Sig Joo , Seung Ho Pyi , Yong Soo Kim
IPC分类号： H01L29/792
CPC分类号： H01L21/28282
摘要： A non-volatile memory device includes a substrate, a tunneling layer over the substrate, a charge trapping layer including a nitride layer and a silicon boron nitride layer over the tunneling layer, and a blocking layer over the charge trapping layer, and a control gate electrode arranged on the blocking layer.
摘要翻译：非易失性存储器件包括衬底，衬底上的隧道层，在隧穿层上方包括氮化物层和氮化硼氮化物层的电荷俘获层，以及电荷俘获层上的阻挡层，以及控制栅极电极布置在阻挡层上。

70. 发明申请

US20110181977A1 METHOD OF WRITING SERVO PATTERN TO DISK OF A HARD DISK DRIVE AND HARD DISK DRIVE CONFIGURED TO PERFORM THE METHOD 审中-公开
标题翻译：将伺服模式写入硬盘驱动器和配置为执行方法的硬盘驱动器的方法
公开(公告)号：US20110181977A1
公开(公告)日：2011-07-28
申请号：US12983902
申请日：2011-01-04
申请人： Ha Yong Kim , Kyung Ho Kim , Kyu Nam Cho , Yong-Soo Kim
发明人： Ha Yong Kim , Kyung Ho Kim , Kyu Nam Cho , Yong-Soo Kim
IPC分类号： G11B5/596 , G11B5/02 , G11B5/09
CPC分类号： G11B5/59688 , G11B5/59638
摘要： A method of writing a servo pattern of a hard disk drive includes measuring the speed of a head of the hard disk drive by reading a basic servo pattern written to only select ones of the data tracks of the disk, realizing a feedforward current profile when the difference between the actual speed of the head and a target speed of the head is within a predetermined range, and writing a reference servo pattern using the realized feedforward current profile. A final servo pattern is then written using the reference servo pattern.
摘要翻译：写入硬盘驱动器的伺服模式的方法包括通过读取写入仅选择盘的数据轨道的基本伺服模式来测量硬盘驱动器的磁头的速度，当实现前馈电流模式时头部的实际速度与头部的目标速度之间的差在预定范围内，并且使用实现的前馈电流曲线写入参考伺服模式。然后使用参考伺服模式写入最终的伺服模式。

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