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61. 发明授权

US07173841B2 Magnetic memory array 有权
标题翻译：磁存储阵列
公开(公告)号：US07173841B2
公开(公告)日：2007-02-06
申请号：US10904897
申请日：2004-12-03
申请人： Yuan-Ching Peng , Shyue-Shyn Lin , Wei-Ming Chen
发明人： Yuan-Ching Peng , Shyue-Shyn Lin , Wei-Ming Chen
IPC分类号： G11C5/08
CPC分类号： G11C11/15 , G11C5/063
摘要： A magnetic random access memory (MRAM) device disclosed herein includes an array of magnetic memory cells having magnetoresistive (MR) stacks. The MRAM array also includes a series of bit lines and word lines coupled to the MR stacks. The array layout provides for reduced crosstalk between neighboring memory cells by increasing a distance between neighboring MR stacks along a common conductor without increasing the overall layout area of the MRAM array. Several embodiments are disclosed where neighboring MR stacks are offset such that the MR stacks are staggered. For example, groups of MR stacks coupled to a common word line or to a common bit line can be staggered. The staggered layout provides for increased distance between neighboring MR stacks for a given MRAM array area, thereby resulting in a reduction of crosstalk, for example during write operations.
摘要翻译：本文公开的磁性随机存取存储器（MRAM）装置包括具有磁阻（MR）堆叠的磁存储器单元阵列。 MRAM阵列还包括耦合到MR堆叠的一系列位线和字线。阵列布局通过增加沿着公共导体的相邻MR堆叠之间的距离而不增加MRAM阵列的总体布局面积来提供相邻存储器单元之间减少的串扰。公开了几个实施例，其中相邻MR堆叠被偏移，使得MR堆叠交错。例如，耦合到公共字线或公共位线的MR堆叠组可以交错。交错布局提供了对于给定MRAM阵列区域的相邻MR堆叠之间的距离增加，从而导致例如在写入操作期间串扰的减少。

62. 发明授权

US07165939B2 Shaft structure for cooling fan rotor 失效
标题翻译：用于冷却风扇转子的轴结构
公开(公告)号：US07165939B2
公开(公告)日：2007-01-23
申请号：US10875162
申请日：2004-06-25
申请人： Wei-Ming Chen , Chih-Ming Cheng , Chen-Lung Chou , Kuang-Hsin Liu
发明人： Wei-Ming Chen , Chih-Ming Cheng , Chen-Lung Chou , Kuang-Hsin Liu
IPC分类号： F04D29/04
CPC分类号： F04D29/0566 , F04D29/057 , F04D29/263
摘要： A fan shaft structure includes an annular groove portion, an end head adjacent to the groove portion, and several teeth equally spaced around the surface of the shaft. The annular groove portion, end head and teeth constitute an insert part of the fan shaft, around which the plastic fan blade is molded by insert molding. The present invention enables the center part of the fan blade to enwrap the insert part of the shaft, and firmly engage with the shaft. It is, therefore, not only able to enhance the robustness of the combination but also successful in preserving the adhesion effect between the shaft and the fan blade.
摘要翻译：风扇轴结构包括环形槽部分，与槽部分相邻的端部头部以及围绕轴的表面等间隔开的多个齿。环形槽部分，端头和齿构成风扇轴的插入部分，塑料风扇叶片通过嵌入成型模制成型。本发明使得风扇叶片的中心部分能够包围轴的插入部分，并且与轴牢固地接合。因此，不仅能够提高组合的鲁棒性，而且能够有效地保持轴与风扇叶片之间的附着效果。

63. 发明申请

US20060120147A1 Magnetic Memory Array 有权
标题翻译：磁存储阵列
公开(公告)号：US20060120147A1
公开(公告)日：2006-06-08
申请号：US10904897
申请日：2004-12-03
申请人： Yuan-Ching Peng , Shyue-Shyn Lin , Wei-Ming Chen
发明人： Yuan-Ching Peng , Shyue-Shyn Lin , Wei-Ming Chen
IPC分类号： G11C11/14 , G11C11/00 , G11C11/15 , G11C5/02
CPC分类号： G11C11/15 , G11C5/063
摘要： A magnetic random access memory (MRAM) device disclosed herein includes an array of magnetic memory cells having magnetoresistive (MR) stacks. The MRAM array also includes a series of bit lines and word lines coupled to the MR stacks. The array layout provides for reduced crosstalk between neighboring memory cells by increasing a distance between neighboring MR stacks along a common conductor without increasing the overall layout area of the MRAM array. Several embodiments are disclosed where neighboring MR stacks are offset such that the MR stacks are staggered. For example, groups of MR stacks coupled to a common word line or to a common bit line can be staggered. The staggered layout provides for increased distance between neighboring MR stacks for a given MRAM array area, thereby resulting in a reduction of crosstalk, for example during write operations.
摘要翻译：本文公开的磁性随机存取存储器（MRAM）装置包括具有磁阻（MR）堆叠的磁存储器单元阵列。 MRAM阵列还包括耦合到MR堆叠的一系列位线和字线。阵列布局通过增加沿着公共导体的相邻MR堆叠之间的距离而不增加MRAM阵列的总体布局面积来提供相邻存储器单元之间减少的串扰。公开了几个实施例，其中相邻MR堆叠被偏移，使得MR堆叠交错。例如，耦合到公共字线或公共位线的MR堆叠组可以交错。交错布局提供了对于给定MRAM阵列区域的相邻MR堆叠之间的距离增加，从而导致例如在写入操作期间串扰的减少。

64. 发明申请

US20060051794A1 Methods and compositions relating to COL2A1 gene mutations and osteonecrosis 有权
标题翻译：与COL2A1基因突变和骨坏死有关的方法和成分
公开(公告)号：US20060051794A1
公开(公告)日：2006-03-09
申请号：US11202057
申请日：2005-08-12
申请人： Shih-Feng Tsai , Yu-Fen Liu , Wei-Ming Chen
发明人： Shih-Feng Tsai , Yu-Fen Liu , Wei-Ming Chen
IPC分类号： C12Q1/68
CPC分类号： C12Q1/6883 , C12Q2600/112 , C12Q2600/156 , C12Q2600/172
摘要： Methods, compounds, and kits for the diagnosis or screening of osteonecrosis are described, and the development of animal models for COL2A1 function in osteonecrosis is put forth. Novel mutations in the COL2A1 gene are identified that are associated with avascular necrosis of the femoral head. Methods of treatment of osteonecrosis and avascular necrosis of the femoral head, including gene therapy approaches comprising introduction of COL2A1 nucleic acid are contemplated.
摘要翻译：描述了用于诊断或筛查骨坏死的方法，化合物和试剂盒，并且提出了COL2A1在骨坏死中发挥功能的动物模型的发展。鉴定出与股骨头无血管性坏死相关的COL2A1基因中的新突变。涵盖治疗股骨头骨坏死和无血管性坏死的方法，包括引入COL2A1核酸的基因治疗方法。

65. 发明申请

US20050207106A1 Commutate silencer of computer system 有权
标题翻译：计算机系统的换向消声器
公开(公告)号：US20050207106A1
公开(公告)日：2005-09-22
申请号：US10926012
申请日：2004-08-26
申请人： Wei-Ming Chen , Chao-Jung Chen , Wen-Liang Huang , Kai-Hung Lin
发明人： Wei-Ming Chen , Chao-Jung Chen , Wen-Liang Huang , Kai-Hung Lin
IPC分类号： G06F1/16 , G06F1/20 , H05K7/20
CPC分类号： G06F1/20
摘要： A commutate silencer of a computer system is described. The commutate silencer of the computer system is installed at the back end of the computer system, and comprises a shield device, a commutate device and at least one partition. The shield device comprises a first shield and a second shield, in which the first shield comprises an opening, the first shield and the second shield construct a first cavity, and the first cavity includes a plurality of outlets. The commutate device comprises a frame and a plurality of commutate diversion plates, in which the frame construct a second cavity, the diversion plates traverse the second cavity, the second cavity has an inlet and a ventilated opening, and the ventilated opening is connected to the opening of the first shield. The at least one partition is located in the first cavity and the second cavity, so as to separate the inlet, the ventilated opening and the outlets into a plurality of sub-inlets, a plurality of sub-ventilated openings and a plurality of sub-outlets, respectively.
摘要翻译：描述了计算机系统的换向消音器。计算机系统的换向消音器安装在计算机系统的后端，并且包括屏蔽装置，整流装置和至少一个隔板。所述屏蔽装置包括第一屏蔽和第二屏蔽，其中所述第一屏蔽包括开口，所述第一屏蔽和所述第二屏蔽构成第一腔，并且所述第一腔包括多个出口。整流装置包括框架和多个换向转向板，框架构成第二空腔，分流板横穿第二空腔，第二空腔具有入口和通风开口，通风开口连接到打开第一个盾牌。所述至少一个隔板位于所述第一空腔和所述第二空腔中，以将所述入口，所述通风口和所述出口分离为多个子入口，多个次通风开口和多个子通道，分店。

66. 发明申请

US20050047920A1 Shaft structure for cooling fan rotor 失效
标题翻译：用于冷却风扇转子的轴结构
公开(公告)号：US20050047920A1
公开(公告)日：2005-03-03
申请号：US10875162
申请日：2004-06-25
申请人： Wei-Ming Chen , Chih-Ming Cheng , Chen-Lung Chou , Kuang-Hsin Liu
发明人： Wei-Ming Chen , Chih-Ming Cheng , Chen-Lung Chou , Kuang-Hsin Liu
IPC分类号： F04D29/04 , F04D29/056 , F04D29/057 , F04D29/26 , F04D29/18
CPC分类号： F04D29/0566 , F04D29/057 , F04D29/263
摘要： A fan shaft structure includes an annular groove portion, an end head adjacent to the groove portion, and several teeth equally spaced around the surface of the shaft. The annular groove portion, end head and teeth constitute an insert part of the fan shaft, around which the plastic fan blade is molded by insert molding. The present invention enables the center part of the fan blade to enwrap the insert part of the shaft, and firmly engage with the shaft. It is, therefore, not only able to enhance the robustness of the combination but also successful in preserving the adhesion effect between the shaft and the fan blade.
摘要翻译：风扇轴结构包括环形槽部分，与槽部分相邻的端部头部以及围绕轴的表面等间隔开的多个齿。环形槽部分，端头和齿构成风扇轴的插入部分，塑料风扇叶片通过嵌入成型模制成型。本发明使得风扇叶片的中心部分能够包围轴的插入部分，并且与轴牢固地接合。因此，不仅能够提高组合的鲁棒性，而且能够有效地保持轴与风扇叶片之间的附着效果。

67. 发明授权

US6133093A Method for forming an integrated circuit 失效
标题翻译：集成电路形成方法
公开(公告)号：US6133093A
公开(公告)日：2000-10-17
申请号：US15957
申请日：1998-01-30
申请人： Erwin J. Prinz , Gregory M. Yeric , Kevin Yun-kang Wu , Wei-Ming Chen , Frank Kelsey Baker
发明人： Erwin J. Prinz , Gregory M. Yeric , Kevin Yun-kang Wu , Wei-Ming Chen , Frank Kelsey Baker
IPC分类号： H01L21/8247 , H01L21/336
CPC分类号： H01L27/11526 , H01L27/11546
摘要： In one embodiment, the reliability of an integrated circuit having a floating gate device (50), a high breakdown voltage transistor (52), and a low breakdown voltage transistor (54), which are electrically isolated from each other by a trench isolation region (12), is improved by using an oxidation resistant layer (24). The oxidation resistant layer (24) protects portions of the trench isolation region (12) when the gate dielectric layer (30) for the high breakdown voltage transistor (52) is formed, and when the gate dielectric layer (36) for the low breakdown voltage transistor (54) is formed. The oxidation resistant layer (24) minimizes etching of the field isolation region (12) so that thinning or recessing of the field isolation region (12) is minimized.
摘要翻译：在一个实施例中，具有浮置栅极器件（50），高击穿电压晶体管（52）和低击穿电压晶体管（54）的集成电路的可靠性通过沟槽隔离区域彼此电隔离（12）通过使用抗氧化层（24）得到改善。当形成用于高击穿电压晶体管（52）的栅极电介质层（30），并且当用于低击穿的栅极电介质层（36）时，抗氧化层（24）保护沟槽隔离区域（12）的部分形成电压晶体管（54）。抗氧化层（24）最小化了场隔离区域（12）的蚀刻，使得场隔离区域（12）的变薄或凹陷最小化。

68. 发明授权

US5969383A Split-gate memory device and method for accessing the same 失效
标题翻译：分闸存储器件及其访问方法
公开(公告)号：US5969383A
公开(公告)日：1999-10-19
申请号：US876576
申请日：1997-06-16
申请人： Kuo-Tung Chang , Ko-Min Chang , Wei-Ming Chen , Keith Forbes , Douglas R. Roberts
发明人： Kuo-Tung Chang , Ko-Min Chang , Wei-Ming Chen , Keith Forbes , Douglas R. Roberts
IPC分类号： G11C16/04 , H01L21/28 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L21/28282 , H01L29/42324 , H01L29/7885 , H01L29/792
摘要： An EEPROM device includes a split-gate FET (10) having a source (36), a drain (22), a select gate (16) adjacent the drain (22), and a control gate (32) adjacent the source (36). When programming the split-gate FET (10), electrons are accelerated in a portion of a channel region (38) between the select gate (16) and the control gate (32), and then injected into a nitride layer (24) of an ONO stack (25) underlying the control gate (32). The split-gate FET (10) is erased by injecting holes from the channel region (38) into the charge nitride layer (24). When reading data from the split-gate FET (10), a reading voltage is applied to the drain (22) adjacent the select gate (16). Data is then read from the split-gate FET (10) by sensing a current flowing in a bit line coupled to the drain (22).
摘要翻译： EEPROM器件包括具有源极（36），漏极（22），与漏极（22）相邻的选择栅极（16））和邻近源极（36）的控制栅极（32）的分离栅极FET（10））。当对分离栅极FET（10）进行编程时，在选择栅极（16）和控制栅极（32）之间的沟道区域（38）的一部分中电子被加速，然后注入氮化物层（24）位于控制门（32）下方的ONO堆叠（25）。通过从沟道区（38）将空穴注入到电荷氮化物层（24）中，分裂栅FET（10）被擦除。当从分离栅极FET（10）读取数据时，读取电压被施加到与选择栅极（16）相邻的漏极（22）。然后通过感测在耦合到漏极（22）的位线中流动的电流，从分离栅极FET（10）读取数据。

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