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61. 发明授权

US09306118B2 Method of treating substrate 有权
标题翻译：底物处理方法
公开(公告)号：US09306118B2
公开(公告)日：2016-04-05
申请号：US11976872
申请日：2007-10-29
申请人： Chiung-Chi Tsai , Tzong-Liang Tsai
发明人： Chiung-Chi Tsai , Tzong-Liang Tsai
IPC分类号： H01L33/00 , H01L33/22 , H01L29/30 , H01L21/304
CPC分类号： H01L33/22 , H01L21/3043 , H01L29/30
摘要： A method of treating a substrate includes forming a plurality of nicks on an upper surface of the substrate by an electromagnetic wave without using a mask, wherein sidewalls of each nick have fusion formed thereon; roughening the sidewalls by removing the fusion; and forming an epitaxial multi-layer structure on the upper surface and the nicks. The roughened sidewalls of each nick comprise an average roughness equal to or larger than 1 nm.
摘要翻译：处理基板的方法包括：在不使用掩模的情况下通过电磁波在基板的上表面上形成多个切口，其中每个切口的侧壁在其上形成熔融; 通过去除融合来粗糙化侧壁; 并在上表面和刻痕上形成外延多层结构。每个切口的粗糙化的侧壁具有等于或大于1nm的平均粗糙度。

62. 发明授权

US07915605B2 LED packaged structure and applications of LED as light source 有权
标题翻译： LED封装结构和应用LED作为光源
公开(公告)号：US07915605B2
公开(公告)日：2011-03-29
申请号：US11984730
申请日：2007-11-21
申请人： Tzong-Liang Tsai , Chih-Ching Cheng
发明人： Tzong-Liang Tsai , Chih-Ching Cheng
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , F21K9/27 , F21Y2103/10 , F21Y2115/10 , H01L33/06
摘要： LED packaged structures and applications thereof are disclosed, characterized in that: an active layer in the LED or the LED packaged structure is formed on a first semiconductor conductive layer with multi-quantum wells; and a second semiconductor conductive layer is formed on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven multi-quantum well.
摘要翻译：公开了LED封装结构及其应用，其特征在于：在具有多量子阱的第一半导体导电层上形成LED或LED封装结构中的有源层; 并且在所述有源层上形成第二半导体导电层; 其中由至少一种异质材料形成的多个颗粒在第一半导体导电层和有源层之间被散射，以形成不均匀的多量子阱。

63. 发明申请

US20110001147A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20110001147A1
公开(公告)日：2011-01-06
申请号：US12856221
申请日：2010-08-13
申请人： Chih CHING Cheng , Tzong Liang Tsai , Shu Hui Lin
发明人： Chih CHING Cheng , Tzong Liang Tsai , Shu Hui Lin
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The substrate includes an upper surface and a plurality of protrusions positioned on the upper surface. Each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces.
摘要翻译：半导体发光器件包括衬底，位于衬底上的第一导电类型半导体层，位于第一导电类型半导体层上的发光结构和位于发光结构上的第二导电型半导体层。基板包括上表面和位于上表面上的多个突起。每个突起包括顶表面，多个壁表面和夹在顶表面和壁表面之间的多个倾斜表面。

64. 发明申请

US20100279443A1 LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20100279443A1
公开(公告)日：2010-11-04
申请号：US12833648
申请日：2010-07-09
申请人： Tzong-Liang TSAI , Way-Jze WEN , Chang-Han CHIANG , Chih-Sung CHANG
发明人： Tzong-Liang TSAI , Way-Jze WEN , Chang-Han CHIANG , Chih-Sung CHANG
IPC分类号： H01L33/02
CPC分类号： H01L33/0079 , H01L33/44
摘要： A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.
摘要翻译：公开了一种发光二极管及其制造方法。在衬底上形成发光二极管外延结构，然后蚀刻发光二极管外延结构以形成凹陷。然后用透明电介质材料填充凹部。粘合层用于粘附导电衬底和发光二极管外延结构。接下来，去除衬底。

65. 发明授权

US07804104B2 Light-emitting diode with high lighting efficiency 有权
标题翻译：发光二极管具有高照明效率
公开(公告)号：US07804104B2
公开(公告)日：2010-09-28
申请号：US12421869
申请日：2009-04-10
申请人： Su-Hui Lin , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
发明人： Su-Hui Lin , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
IPC分类号： H01L27/15
CPC分类号： H01L33/46 , H01L33/387 , H01L2933/0083
摘要： The invention discloses a light-emitting diode, including a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer and plural laminated structures. The first conductive type semiconductor layer, the light-emitting layer and the second conductive type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the upper surface of the second conductive type semiconductor layer such that the upper surface is partially exposed. Each laminated structure consists of at least one first insulated layer with a high refractive index and at least one second insulated layer with a low refractive index, where the at least one first insulated layer and the at least one second insulated layer are alternately formed to obtain said each laminated structure. Thereby, light emitted from the light-emitting layer can be reflected by the laminated structures to enhance the light-extraction efficiency.
摘要翻译：本发明公开了一种发光二极管，包括基板，第一导电型半导体层，第二导电型半导体层，发光层和多层叠结构。依次在基板上形成第一导电型半导体层，发光层和第二导电型半导体层。在第二导电型半导体层的上表面上形成多个叠层结构，使得上表面部分露出。每个层压结构由至少一个具有高折射率的第一绝缘层和至少一个具有低折射率的第二绝缘层组成，其中至少一个第一绝缘层和至少一个第二绝缘层交替地形成以获得说每个层压结构。由此，从发光层发出的光可以被叠层结构反射，以提高光提取效率。

66. 发明申请

US20100237357A1 Light Emitting Device Having Pillar Structure with Roughness Surface and the Forming Method Thereof 有权
标题翻译：具有粗糙表面的支柱结构的发光装置及其形成方法
公开(公告)号：US20100237357A1
公开(公告)日：2010-09-23
申请号：US12414753
申请日：2009-03-31
申请人： Tzong-Liang TSAI , Lin-Chieh KAO
发明人： Tzong-Liang TSAI , Lin-Chieh KAO
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/42
摘要： A light emitting device is provided which includes a substrate, a first semiconductor layer having a first region and a second region on the substrate; ac active layer is formed on the first region of the first semiconductor layer; a second semiconductor layer is formed on the active surface layer and the portion surface of the second semiconductor layer is a rough surface; a plurality of pillar structures with a hollow structure, and both of the outer surface and inner surface of the pillar structures are rough surface; a transparent conductive layer is formed to cover the plurality of pillar structures; a first electrode is formed on the transparent conductive layer; and a second electrode is formed on the second region of the first semiconductor layer.
摘要翻译：提供了一种发光器件，其包括衬底，在衬底上具有第一区域和第二区域的第一半导体层; 交流有源层形成在第一半导体层的第一区域上; 在有源表面层上形成第二半导体层，第二半导体层的部分表面是粗糙表面; 具有中空结构的多个柱结构，并且柱结构的外表面和内表面都是粗糙的表面; 形成透明导电层以覆盖多个支柱结构; 在透明导电层上形成第一电极; 并且第二电极形成在第一半导体层的第二区域上。

67. 发明申请

US20100176419A1 LIGHT-EMITTING DIODE WITH HIGH LIGHTING EFFICIENCY 有权
标题翻译：具有高照明效率的发光二极管
公开(公告)号：US20100176419A1
公开(公告)日：2010-07-15
申请号：US12421872
申请日：2009-04-10
申请人： Su-Hui LIN , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
发明人： Su-Hui LIN , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/42
摘要： The invention discloses a light-emitting diode. In an embodiment, the light-emitting diode includes a substrate, a first doping type semiconductor layer, a second doping type semiconductor layer, a light-emitting layer and plural laminated structures. The first doping type semiconductor layer, the light-emitting layer and the second doping type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the top surface of the second doping type semiconductor layer such that the top surface is partially exposed. Each laminated structure consists of plural transparent insulating layers which have their respective refractive indices. Additionally, each of the laminated structures is formed in a way of upwardly stacking the transparent insulating layers in sequence with the refractive indices of the transparent insulating layers decreasing gradually, so as to enhance the light-extraction efficiency and the lighting efficiency of the light-emitting diode.
摘要翻译：本发明公开了一种发光二极管。在一个实施例中，发光二极管包括基板，第一掺杂型半导体层，第二掺杂型半导体层，发光层和多个叠层结构。依次在基板上形成第一掺杂型半导体层，发光层和第二掺杂型半导体层。多个叠层结构形成在第二掺杂型半导体层的顶表面上，使得顶表面部分露出。每个层压结构由具有各自折射率的多个透明绝缘层组成。另外，各层叠结构体以与透明绝缘层的折射率逐渐降低的顺序向上堆叠透明绝缘层的方式形成，从而提高发光体的光提取效率和照明效率，发光二极管。

68. 发明申请

US20090212312A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20090212312A1
公开(公告)日：2009-08-27
申请号：US12269499
申请日：2008-11-12
申请人： Tzong-Liang TSAI , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
发明人： Tzong-Liang TSAI , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L2933/0091
摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.
摘要翻译：本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块结构。第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。第一电极形成在第一区域上。在第二区域上形成发光层和第二导电型半导体材料层。凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。每个凸块结构由ITO，SiO2，SiN，ZnO，聚酰亚胺，BCB，SOG，InO或SnO制成。

69. 发明申请

US20090212311A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
公开(公告)号：US20090212311A1
公开(公告)日：2009-08-27
申请号：US12184933
申请日：2008-08-01
申请人： Tzong-Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
发明人： Tzong-Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L2933/0091
摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.

70. 发明申请

US20090029497A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090029497A1
公开(公告)日：2009-01-29
申请号：US12246339
申请日：2008-10-06
申请人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
发明人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L21/00
CPC分类号： H01L33/26 , H01L33/40
摘要： The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a H-V group (or II-W-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.
摘要翻译：本发明提供具有II-V族（或II-IV-V族）化合物接触层的半导体发光器件及其制造方法。根据本发明的优选实施例的半导体发光器件包括衬底，第一导电类型半导体材料层，发光层，第一电极，第二导电类型半导体材料层，HV组（或II -WV族）化合物接触层，透明导电层和第二电极。 II-V族（或II-IV-V族）化合物接触层的存在改善了第二导电类型半导体材料层和透明导电层之间的欧姆接触。

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