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61. 发明授权

US08711084B2 Device and method for controlling brightness of organic light emitting diode display 有权
标题翻译：用于控制有机发光二极管显示器亮度的装置和方法
公开(公告)号：US08711084B2
公开(公告)日：2014-04-29
申请号：US12886920
申请日：2010-09-21
申请人： Hyun Jae Lee , Jin-Hyoung Kim , Jae-Sung Son
发明人： Hyun Jae Lee , Jin-Hyoung Kim , Jae-Sung Son
IPC分类号： G09G5/10
CPC分类号： G09G3/3225 , G09G3/3406 , G09G2320/0633 , G09G2320/064 , G09G2330/028 , G09G2360/16
摘要： A device and a method for controlling brightness of an OLED display device are disclosed.The method for controlling brightness of an OLED display device includes the steps of forwarding external brightness control information in a PWM signal or a brightness control data, selecting and normalizing either the PWM signal or the brightness control data into an external brightness adjusting gain, analyzing a received video data to detect a peak brightness value, multiplying the peak brightness value by the external brightness adjusting gain to produce a final peak brightness value, adjusting the R/G/B maximum gamma voltage values according to the final peak brightness value, and generating R/G/B reference gamma voltage sets by using the R/G/B maximum gamma voltage values adjusted thus.
摘要翻译：公开了一种用于控制OLED显示装置的亮度的装置和方法。用于控制OLED显示装置的亮度的方法包括以下步骤：将PWM信号或亮度控制数据中的外部亮度控制信息转发，将PWM信号或亮度控制数据选择和归一化为外部亮度调节增益，分析接收视频数据以检测峰值亮度值，将峰值亮度值乘以外部亮度调节增益以产生最终峰值亮度值，根据最终峰值亮度值调整R / G / B最大伽马电压值，并产生通过使用由此调整的R / G / B最大伽玛电压值，R / G / B参考伽玛电压组。

62. 发明授权

US07962790B2 Inference-based home network error handling system and method 有权
标题翻译：基于推理的家庭网络错误处理系统和方法
公开(公告)号：US07962790B2
公开(公告)日：2011-06-14
申请号：US11949737
申请日：2007-12-03
申请人： Young Sung Son , Tai Yeon Ku , Jun Hee Park , Kyeong Deok Moon
发明人： Young Sung Son , Tai Yeon Ku , Jun Hee Park , Kyeong Deok Moon
IPC分类号： G06F11/00
CPC分类号： G06F11/0775 , G06F11/0709 , G06F11/0736 , G06F11/0787 , H04L12/2827 , H04L41/0663 , H04L41/22 , H04L41/5061 , H04L2012/285
摘要： Provided is an inference-based home network error handling system and method capable of recognizing an error which occurs in a home network environment including a plurality of devices and services that are connected and executed, handling the error on the basis of an inference function, and providing support information used to recognize a cause of the error and handle the error to the user for the convenience of the user. Accordingly, errors are recognized according to devices, networks, and services, types of the errors recognized by applying inference rules set in advance and error handling rules are inferred, a result of the inferring is provided to the user, and error handling operations are performed according to a selection of a user.
摘要翻译：提供了一种基于推理的家庭网络错误处理系统和方法，其能够识别在包括连接和执行的多个设备和服务的家庭网络环境中发生的错误，基于推理功能处理该错误，以及提供用于识别错误原因的支持信息，并为用户方便地向用户处理错误。因此，根据设备，网络和服务来识别错误，通过应用预先设定的推理规则识别的错误的类型被推断，推断的结果被提供给用户，并且执行错误处理操作根据用户的选择。

63. 发明申请

US20110131252A1 METHOD AND APPARATUS FOR PHYSICAL/LOGICAL RELATIONSHIP MAPPING BETWEEN RESOURCES 有权
标题翻译：用于资源之间的物理/逻辑关系映射的方法和装置
公开(公告)号：US20110131252A1
公开(公告)日：2011-06-02
申请号：US12953266
申请日：2010-11-23
申请人： Ji-Yeon SON , Young-Sung Son , Hark-Jin Lee , Kyeong-Deok Moon
发明人： Ji-Yeon SON , Young-Sung Son , Hark-Jin Lee , Kyeong-Deok Moon
IPC分类号： G06F17/30
CPC分类号： H04L41/12 , H04L41/0893
摘要： Disclosed is a method for dynamically mapping a physical/logical relationship between resources. The method for physical/logical relationship mapping between resources includes: abstracting heterogeneous environments of physical resources; expressing the physical resources by a resource instance of a predetermined format to generate logical resources which are grouped and managed in accordance with types of the resources; and analyzing the physical/logical relationship between the resources to generate a relation map.
摘要翻译：公开了一种用于动态地映射资源之间的物理/逻辑关系的方法。资源之间物理/逻辑关系映射的方法包括：抽象物理资源的异构环境; 通过预定格式的资源实例来表示物理资源，以生成根据资源的类型进行分组和管理的逻辑资源; 并分析资源之间的物理/逻辑关系以产生关系图。

64. 发明申请

US20100244756A1 High Voltage Integration Circuit With Freewheeling Diode Embedded in Transistor 有权
标题翻译：具有嵌入在晶体管中的续流二极管的高压集成电路
公开(公告)号：US20100244756A1
公开(公告)日：2010-09-30
申请号：US12795564
申请日：2010-06-07
申请人： Taeg-hyun Kang , Sung-son Yun
发明人： Taeg-hyun Kang , Sung-son Yun
IPC分类号： H02P6/14 , H01L27/06
CPC分类号： H01L27/0727 , H01L27/0761 , H01L29/0619 , H01L29/0696 , H01L29/7819 , H01L29/861
摘要： A high voltage integrated circuit contains a freewheeling diode embedded in a transistor. It further includes a control block controlling a high voltage transistor and a power block—including the high voltage transistor—isolated from the control block by a device isolation region. The high voltage transistor includes a semiconductor substrate of a first conductivity type, a epitaxial layer of a second conductivity type on the semiconductor substrate, a buried layer of the second conductivity type between the semiconductor substrate and the epitaxial layer, a collector region of the second conductivity type on the buried layer, a base region of the first conductivity type on the epitaxial layer, and an emitter region of the second conductivity type formed in the base region. The power block further includes a deep impurity region of the first conductivity type near the collector region to form a PN junction.
摘要翻译：高压集成电路包含嵌入晶体管的续流二极管。它还包括控制高压晶体管的控制块和包括通过器件隔离区从控制块隔离的高压晶体管的功率块。高压晶体管包括第一导电类型的半导体衬底，半导体衬底上的第二导电类型的外延层，半导体衬底和外延层之间的第二导电类型的掩埋层，第二导电类型的第二导电类型的集电极区域掩埋层上的导电类型，外延层上的第一导电类型的基极区域和形成在基极区域中的第二导电类型的发射极区域。功率块还包括在集电极区附近的第一导电类型的深杂质区，以形成PN结。

65. 发明授权

US07732858B2 High voltage integration circuit with freewheeling diode embedded in transistor 有权
标题翻译：具有嵌入晶体管的续流二极管的高压集成电路
公开(公告)号：US07732858B2
公开(公告)日：2010-06-08
申请号：US11603671
申请日：2006-11-22
申请人： Taeg-hyun Kang , Sung-son Yun
发明人： Taeg-hyun Kang , Sung-son Yun
IPC分类号： H01L29/94
CPC分类号： H01L27/0727 , H01L27/0761 , H01L29/0619 , H01L29/0696 , H01L29/7819 , H01L29/861
摘要： A high voltage integrated circuit contains a freewheeling diode embedded in a transistor. It further includes a control block controlling a high voltage transistor and a power block—including the high voltage transistor—isolated from the control block by a device isolation region. The high voltage transistor includes a semiconductor substrate of a first conductivity type, a epitaxial layer of a second conductivity type on the semiconductor substrate, a buried layer of the second conductivity type between the semiconductor substrate and the epitaxial layer, a collector region of the second conductivity type on the buried layer, a base region of the first conductivity type on the epitaxial layer, and an emitter region of the second conductivity type formed in the base region. The power block further includes a deep impurity region of the first conductivity type near the collector region to form a PN junction.
摘要翻译：高压集成电路包含嵌入晶体管的续流二极管。它还包括控制高压晶体管的控制块和包括通过器件隔离区从控制块隔离的高压晶体管的功率块。高压晶体管包括第一导电类型的半导体衬底，半导体衬底上的第二导电类型的外延层，半导体衬底和外延层之间的第二导电类型的掩埋层，第二导电类型的第二导电类型的集电极区域掩埋层上的导电类型，外延层上的第一导电类型的基极区域和形成在基极区域中的第二导电类型的发射极区域。功率块还包括在集电极区附近的第一导电类型的深杂质区，以形成PN结。

66. 发明授权

US07476598B2 Photodiode and method of manufacturing the same 失效
标题翻译：光电二极管及其制造方法
公开(公告)号：US07476598B2
公开(公告)日：2009-01-13
申请号：US11670457
申请日：2007-02-02
申请人： Ho-Sung Son , Sung-Ryoul Bae , Dong-Kyun Nam
发明人： Ho-Sung Son , Sung-Ryoul Bae , Dong-Kyun Nam
IPC分类号： H01L21/20
CPC分类号： H01L31/105 , H01L31/02168 , Y02E10/50
摘要： A photodiode and a method of manufacturing the photodiode are provided. The method includes forming a diode junction structure including a light receiving unit and an electrode unit on a semiconductor substrate, forming a buffer oxide layer and an etching blocking layer on the junction structure, forming an interlayer insulating layer and an intermetal insulating layer and an interconnecting structure, exposing the etching blocking layer by etching the intermetal insulating layer and the interlayer insulating layer, removing a portion of the etching blocking layer and the buffer oxide layer of the light-receiving unit by dry etching, and exposing a semiconductor surface of the light-receiving unit by wet etching.
摘要翻译：提供光电二极管和制造光电二极管的方法。该方法包括在半导体衬底上形成包括光接收单元和电极单元的二极管结结构，在接合结构上形成缓冲氧化物层和蚀刻阻挡层，形成层间绝缘层和金属间绝缘层和互连通过蚀刻金属间绝缘层和层间绝缘层来暴露蚀刻阻挡层，通过干法蚀刻去除蚀刻阻挡层的一部分和光接收单元的缓冲氧化物层，并且暴露光的半导体表面接收单元通过湿蚀刻。

67. 发明申请

US20080112419A1 Homenetwork Universal Middleware Bridge System And Method For Home Device's Interoperability In Heterogeneous Homenetwork Middleware 有权
标题翻译： Homenetwork通用中间件桥系统和家庭设备在异构Homennet中间件中的互操作性的方法
公开(公告)号：US20080112419A1
公开(公告)日：2008-05-15
申请号：US11721951
申请日：2005-12-16
申请人： Chang-Eun Lee , Jun-Hee Park , Young-Sung Son , Dong-Hee Kim , Kyeong-Deok Moon , Yu-Seok Bae
发明人： Chang-Eun Lee , Jun-Hee Park , Young-Sung Son , Dong-Hee Kim , Kyeong-Deok Moon , Yu-Seok Bae
IPC分类号： H04L12/28
CPC分类号： H04L12/2805 , H04L12/2832 , H04L67/28 , H04L67/2823 , H04L2012/2849
摘要： Provided is a home-network UMB system and a method thereof for providing interoperability between devices connected one another through different types of middlewares in a home network. The home-network UMB system includes: a bridge core for establishing/releasing a connection between bridge adaptors of different types of middlewares and analyzing/transferring a universal middleware message in order to interoperate devices connected through different types of middlewares existed on a home network; and a plurality of bridge adaptor for connecting the bridge core to a corresponding middleware, and finding/releasing different types of devices, controlling/monitoring different types of devices and registering/creating an event for different types of devices through transforming a universal middleware bridge message to a local message of each middleware and vice versa.
摘要翻译：提供了家庭网络UMB系统及其方法，用于通过家庭网络中的不同类型的中间件在彼此连接的设备之间提供互操作性。家庭网络UMB系统包括：用于建立/释放不同类型中间件的桥接适配器之间的连接的桥接核心，并且分析/传送通用中间件消息以便通过不同类型的中间设备连接的设备进行互操作存在于家庭网络上; 以及多个桥接器，用于将桥接核心连接到相应的中间件，并且通过转换通用中间件桥接消息来查找/释放不同类型的设备，控制/监视不同类型的设备以及为不同类型的设备注册/创建事件到每个中间件的本地消息，反之亦然。

68. 发明授权

US07268895B2 Inspection system and a method for inspecting a semiconductor wafer 失效
标题翻译：检查系统和检查半导体晶片的方法
公开(公告)号：US07268895B2
公开(公告)日：2007-09-11
申请号：US11052698
申请日：2005-02-07
申请人： Kwang-Woon Lee , Jang-Hyeok Lee , Wook-Sung Son
发明人： Kwang-Woon Lee , Jang-Hyeok Lee , Wook-Sung Son
IPC分类号： G01N21/00 , G01B11/14
CPC分类号： G01N21/9501
摘要： An inspection system for inspecting a wafer and an inspection method thereof are provided. The inspection system includes a rotating means for turning and arranging a wafer to an inspection position, an angle measuring means for measuring a rotational angle used by the rotating means to rotate to the inspection position, an inspection apparatus for acquiring inspection data associated with the wafer, and a controller for determining an amending angle from the rotational angle and for amending the inspection data in accordance with the amending angle to calculate amended inspection data, wherein the amended inspection data reflects a state of the wafer on the rotating means.
摘要翻译：提供了一种用于检查晶片的检查系统及其检查方法。检查系统包括用于将晶片转动并布置到检查位置的旋转装置，用于测量由旋转装置旋转到检查位置的旋转角度的角度测量装置，用于获取与晶片相关联的检查数据的检查装置以及控制器，用于根据所述旋转角度确定修正角度，并根据所述修正角修正所述检查数据，以计算修正的检查数据，其中所述经修改的检查数据反映所述旋转装置上的所述晶片的状态。

69. 发明申请

US20070132008A1 High voltage integration circuit with freewheeling diode embedded in transistor 有权
标题翻译：具有嵌入晶体管的续流二极管的高压集成电路
公开(公告)号：US20070132008A1
公开(公告)日：2007-06-14
申请号：US11603671
申请日：2006-11-22
申请人： Taeg-hyun Kang , Sung-son Yun
发明人： Taeg-hyun Kang , Sung-son Yun
IPC分类号： H01L29/788
CPC分类号： H01L27/0727 , H01L27/0761 , H01L29/0619 , H01L29/0696 , H01L29/7819 , H01L29/861
摘要： A high voltage integrated circuit contains a freewheeling diode embedded in a transistor. It further includes a control block controlling a high voltage transistor and a power block—including the high voltage transistor—isolated from the control block by a device isolation region. The high voltage transistor includes a semiconductor substrate of a first conductivity type, a epitaxial layer of a second conductivity type on the semiconductor substrate, a buried layer of the second conductivity type between the semiconductor substrate and the epitaxial layer, a collector region of the second conductivity type on the buried layer, a base region of the first conductivity type on the epitaxial layer, and an emitter region of the second conductivity type formed in the base region. The power block further includes a deep impurity region of the first conductivity type near the collector region to form a PN junction.
摘要翻译：高压集成电路包含嵌入晶体管的续流二极管。它还包括控制高压晶体管的控制块和包括通过器件隔离区从控制块隔离的高压晶体管的功率块。高压晶体管包括第一导电类型的半导体衬底，半导体衬底上的第二导电类型的外延层，半导体衬底和外延层之间的第二导电类型的掩埋层，第二导电类型的第二导电类型的集电极区域掩埋层上的导电类型，外延层上的第一导电类型的基极区域和形成在基极区域中的第二导电类型的发射极区域。功率块还包括在集电极区附近的第一导电类型的深杂质区，以形成PN结。

70. 发明申请

US20070114864A1 Motor with position-adjustable rotor 审中-公开
标题翻译：电机带位置可调转子
公开(公告)号：US20070114864A1
公开(公告)日：2007-05-24
申请号：US11603002
申请日：2006-11-22
申请人： Sung Son
发明人： Sung Son
IPC分类号： H02K5/16 , H02K1/22
CPC分类号： H02K1/28 , H02K5/1672 , H02K7/083
摘要： A motor with a position-adjustable rotor, wherein a rotational shaft of the motor is rotatably supported by a holder assembly, includes a rotor of which the rotational shaft is fixed in a central portion. The rotor has a position adjusting indentation around the rotational shaft, and is formed by pressing soft magnetic powder. Further, the motor includes a position adjusting bushing, inserted into the rotational shaft to be positioned between the rotor and the holder assembly. The position adjusting bushing has an insertion unit inserted into the position adjusting indentation and a locking unit supported at an exterior side of the position adjusting indentation, wherein the insertion unit and the locking unit have different diameters or widths. In the motor, a gap between the rotor and the holder assembly is adjusted by changing a direction in which the position adjusting bushing is inserted into the rotational shaft.
摘要翻译：一种具有位置可调转子的电动机，其中电动机的旋转轴由保持器组件可旋转地支撑，包括转子，转子轴固定在转子的中心部分。转子具有围绕旋转轴的位置调整压痕，并且通过压制软磁粉而形成。此外，电动机包括位置调节衬套，其插入到转动轴中以定位在转子和保持器组件之间。位置调整衬套具有插入到位置调整凹部中的插入单元和支撑在位置调整凹部的外侧的锁定单元，其中插入单元和锁定单元具有不同的直径或宽度。在电动机中，通过改变位置调节衬套插入到旋转轴中的方向来调节转子和保持器组件之间的间隙。

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