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    • 63. 发明申请
    • METHOD OF FORMING DECOUPLED COMB ELECTRODES BY SELF-ALIGNMENT ETCHING
    • 通过自对准蚀刻形成分解的电极的方法
    • US20070287231A1
    • 2007-12-13
    • US11733791
    • 2007-04-11
    • Seok-whan CHUNGHyung CHOISeok-jin KANGYoung-chul KO
    • Seok-whan CHUNGHyung CHOISeok-jin KANGYoung-chul KO
    • H01L21/84
    • B81C1/00166B81B2201/033B81B2201/042G02B26/0841
    • A method of etching decoupled comb electrodes by self-alignment is provided The etching method is a self-alignment etching method for forming upper comb electrodes in a first silicon layer of a silicon on insulator (SOI) substrate and lower comb electrodes in a second silicon layer of the SOI substrate. The self-alignment etching method includes forming a first metal mask on the first silicon layer so as to cover portions of the first silicon layer where the upper comb electrodes are to be formed, forming a first photoresist (PR) mask on the first metal mask and portions of the first silicon layer corresponding to the lower comb electrodes, selectively etching the first silicon layer using the first PR mask as an etch barrier layer, selectively etching an insulating layer of the SOI substrate using the first PR mask as an etch barrier layer, selectively etching the second silicon layer of the SOI substrate using the first PR mask as an etch barrier layer, forming a second PR mask on portions of the second silicon layer corresponding to the upper comb electrodes, forming a second metal mask entirely on an exposed bottom surface of the second silicon layer including the second PR mask, removing the first and second PR masks, and etching the first and second silicon layers using the remaining first and second metal masks so as to form the upper comb electrodes and the lower comb electrodes.
    • 提供了通过自对准来蚀刻去耦合梳状电极的方法。蚀刻方法是用于在绝缘体上硅(SOI)衬底的第一硅层中形成上梳状电极的自对准蚀刻方法和在第二硅中的下梳状电极 SOI衬底层。 自对准蚀刻方法包括在第一硅层上形成第一金属掩模以覆盖将要形成上梳状电极的第一硅层的部分,在第一金属掩模上形成第一光致抗蚀剂(PR)掩模 并且第一硅层对应于下梳状电极的部分,使用第一PR掩模选择性地蚀刻第一硅层作为蚀刻阻挡层,使用第一PR掩模作为蚀刻阻挡层选择性地蚀刻SOI衬底的绝缘层 使用第一PR掩模作为蚀刻阻挡层选择性地蚀刻SOI衬底的第二硅层,在对应于上梳状电极的第二硅层的部分上形成第二PR掩模,完全在暴露的 第二硅层的底表面包括第二PR掩模,去除第一和第二PR掩模,以及使用rema蚀刻第一和第二硅层 在第一和第二金属掩模上形成上梳状电极和下梳状电极。