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61. 发明申请

US20070188936A1 Current confining layer for GMR device 有权
标题翻译： GMR设备的电流限制层
公开(公告)号：US20070188936A1
公开(公告)日：2007-08-16
申请号：US11352676
申请日：2006-02-13
申请人： Kunliang Zhang , Daniel Abels , Min Li , Yu-Hsia Chen
发明人： Kunliang Zhang , Daniel Abels , Min Li , Yu-Hsia Chen
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01L43/08 , H01L43/12 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Concerns about inadequate electromigration robustness in CCP CPP GMR devices have been overcome by adding magnesium to the current confining structures that are presently in use. In one embodiment the alumina layer, in which the current carrying copper regions are embedded, is fully replaced by a magnesia layer. In other embodiments, alumina is still used but a layer of magnesium is included within the structure before it is subjected to ion assisted oxidation.
摘要翻译：通过向当前使用的当前限制结构添加镁，克服了对CCP CPP GMR器件的电迁移鲁棒性不足的担忧。在一个实施例中，其中载流电铜区域的氧化铝层被氧化镁层完全替代。在其它实施方案中，仍然使用氧化铝，但在进行离子辅助氧化之前，该结构中包含一层镁。

62. 发明申请

US20070146928A1 Ultra thin seed layer for CPP or TMR structure 有权
标题翻译：用于CPP或TMR结构的超薄种子层
公开(公告)号：US20070146928A1
公开(公告)日：2007-06-28
申请号：US11317598
申请日：2005-12-23
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Yu-Hsia Chen , Min Li , Cherng-Chyi Han
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Yu-Hsia Chen , Min Li , Cherng-Chyi Han
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , Y10T29/49021
摘要： Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.
摘要翻译：已经通过用Ta上的Ru的双层代替常规种子层（通常为Ta）来制造改进的磁性器件。虽然Ru和Ta层都是超薄的（5到20埃之间），但保留种子和AFM层之间良好的交换偏差（约为70埃的IrMn）。这种安排有助于最小的屏蔽间隔，并在CPP，CCP-CPP或TMR配置中提供出色的性能。

63. 发明申请

US20070070556A1 FCC-like trilayer AP2 structure for CPP GMR EM improvement 有权
标题翻译： FCC类三层AP2结构，用于CPP GMR EM改进
公开(公告)号：US20070070556A1
公开(公告)日：2007-03-29
申请号：US11234719
申请日：2005-09-23
申请人： Kunliang Zhang , Dan Abels , Min Li , Chyu-Jiuh Torng , Chen-Jung Chien , Yu-Hsia Chen
发明人： Kunliang Zhang , Dan Abels , Min Li , Chyu-Jiuh Torng , Chen-Jung Chien , Yu-Hsia Chen
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/16 , H01F10/3236 , H01F10/3259 , H01F10/3272 , H01F41/302
摘要： A CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe5 or Co75Fe25 single layer. The MR ratio of the spin valve is also increased and the RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.
摘要翻译：公开了一种具有AP2 /耦合/ AP1构型的钉扎层的CPP-GMR自旋阀，其中AP2部分是具有由Co＆lt; Z＆gt; Fe（100）表示的组成的FCC状三层 -Z）/ Fe（100-X）Ta x / Co Z（Fe）（100-Z）单层。自旋阀的MR比也增加，RA保持在可接受的水平。耦合层优选为Ru，并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。

64. 发明授权

US07180716B2 Fabrication method for an in-stack stabilized synthetic stitched CPP GMR head 失效
标题翻译：堆叠稳定的合成缝合CPP GMR头的制造方法
公开(公告)号：US07180716B2
公开(公告)日：2007-02-20
申请号：US10812695
申请日：2004-03-30
申请人： Min Li , Youfeng Zheng , Kunliang Zhang , Simon Liao , Kochan Ju
发明人： Min Li , Youfeng Zheng , Kunliang Zhang , Simon Liao , Kochan Ju
IPC分类号： G11B5/39 , G11B11/127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , H01F10/3272 , H01F41/308 , Y10T29/49034 , Y10T428/1143
摘要： A method for fabricating a stitched CPP synthetic spin-valve sensor with in-stack stabilization of its free layer. The method can also be applied to the formation of a stitched tunneling magnetoresistive sensor. The free layer is strongly stabilized by magnetostatic coupling through the use of a longitudinal biasing formation that includes a ferromagnetic layer, denoted LBL, within the pillar portion of the sensor and a synthetic exchange coupled tri-layer within the stitched portion of the sensor. The tri-layer consists of two ferromagnetic layers, FM1 and FM2 separated by a coupling layer and magnetized longitudinally in antiparallel directions. A criterion for the magnetic thicknesses of the layers: [t(LBL)+t(FM1)]/t(FM2)=70/90 angstroms of CoFe insures a strong exchange coupling. The magnetization of the tri-layer is done in a low field anneal that does not disturb the previous magnetization of the ferromagnetic free layer.
摘要翻译：一种用于制造其自由层的堆叠稳定化的缝合CPP合成自旋阀传感器的方法。该方法还可以应用于缝合隧道磁阻传感器的形成。通过使用包括在传感器的柱部分中表示为LBL的铁磁性层的纵向偏压结构和在传感器的缝合部分内的合成交换耦合三层的静电耦合，自由层被强烈地稳定。三层由两个铁磁层组成，FM 1和FM 2由耦合层分开，并沿反向平行方向纵向磁化。层的磁性厚度的标准：CoFe的[t（LBL）+ t（FM 1）] / t（FM 2）= 70/90埃确保了强的交换耦合。三层的磁化是在不影响铁磁自由层的先前磁化的低场退火中进行的。

65. 发明申请

US20060164765A1 Ta based bilayer seed for IrMn CPP spin valve 有权
标题翻译：用于IrMn CPP自旋阀的Ta基双层种子
公开(公告)号：US20060164765A1
公开(公告)日：2006-07-27
申请号：US11043624
申请日：2005-01-26
申请人： Min Li , Kunliang Zhang , Chyu-Jiuh Torng , Yu-Hsia Chen
发明人： Min Li , Kunliang Zhang , Chyu-Jiuh Torng , Yu-Hsia Chen
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/39
摘要： The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic influence of underlying layers while the ruthenium or copper provide a suitable base on which to grow the IrMn layer.
摘要翻译：通过用钽和钌或铜替代传统的单层种子，在高开关场中的CPP GMR器件中的IrMn钉扎层的有效性得到改善。钽用于抵消下层的结晶影响，而钌或铜提供合适的碱以生长IrMn层。

66. 发明授权

US07068478B2 CPP GMR read head 失效
标题翻译： CPP GMR读头
公开(公告)号：US07068478B2
公开(公告)日：2006-06-27
申请号：US10631840
申请日：2003-07-31
申请人： Min Li , Kunliang Zhang , Rachid Sbiaa , Cheng T. Horng , Simon Liao , Kochan Ju
发明人： Min Li , Kunliang Zhang , Rachid Sbiaa , Cheng T. Horng , Simon Liao , Kochan Ju
IPC分类号： G11B5/39 , C21D1/04 , G11C11/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C21D1/04 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F41/303 , Y10T29/49034 , Y10T29/49044
摘要： Replacing ruthenium with rhodium as the AFM coupling layer in a synthetically pinned CPP GMR structure enables the AP1/AP2 thicknesses to be increased. This results in improved stability and allows the free layer and AFM layer thicknesses to be decreased, leading to an overall improvement in the device performance. Another key advantage of this structure is that the magnetic annealing requirements (to establish antiparallelism between AP1 and AP2) can be significantly relaxed.
摘要翻译：在合成固定的CPP GMR结构中用铑代替钌作为AFM偶合层，可以提高AP1 / AP2的厚度。这导致改进的稳定性并且允许降低自由层和AFM层厚度，导致器件性能的总体改善。这种结构的另一个关键优点是可以显着放松磁性退火要求（建立AP1和AP2之间的反平行度）。

67. 发明申请

US20050275975A1 Novel hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的新型硬偏置设计
公开(公告)号：US20050275975A1
公开(公告)日：2005-12-15
申请号：US10868716
申请日：2004-06-15
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构包括具有Co ++ 78.6Cr 5.2 Pt 16.2的复合硬偏置层另一方面，本发明的另一个目的是提供一种用于制造高分子材料的方法。上部Co 65 N 15 15 Pt 20 O层具有较大的Hc值，并且厚度比Co < 丙烯酸甲酯，丙烯酸甲酯，丙烯酸丁酯，丙烯酸乙酯硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。任选地，Co ++ C 26.6 Cr 2 Pt 16.2层的厚度为零，并且Co 65 在BCC底层上形成> 15 20 层。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

68. 发明申请

US20050024792A1 CPP GMR read head 失效
标题翻译： CPP GMR读头
公开(公告)号：US20050024792A1
公开(公告)日：2005-02-03
申请号：US10631840
申请日：2003-07-31
申请人： Min Li , Kunliang Zhang , Rachid Sbiaa , Cheng Horng , Simon Liao , Kochan Ju
发明人： Min Li , Kunliang Zhang , Rachid Sbiaa , Cheng Horng , Simon Liao , Kochan Ju
IPC分类号： C21D1/04 , G11B5/39 , H01F10/32 , H01F41/30 , G11B5/33 , G11B5/127 , H01F1/00 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C21D1/04 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F41/303 , Y10T29/49034 , Y10T29/49044
摘要： Replacing ruthenium with rhodium as the AFM coupling layer in a synthetically pinned CPP GMR structure enables the AP1/AP2 thicknesses to be increased. This results in improved stability and allows the free layer and AFM layer thicknesses to be decreased, leading to an overall improvement in the device performance. Another key advantage of this structure is that the magnetic annealing requirements (to establish antiparallelism between AP1 and AP2) can be significantly relaxed.
摘要翻译：在合成固定的CPP GMR结构中用铑代替钌作为AFM偶合层，可以提高AP1 / AP2的厚度。这导致改进的稳定性并且允许降低自由层和AFM层厚度，导致器件性能的总体改善。这种结构的另一个关键优点是可以显着放松磁性退火要求（建立AP1和AP2之间的反平行度）。

69. 发明申请

US20160284983A1 CoFe/Ni Multilayer Film with Perpendicular Anisotropy for Microwave Assisted Magnetic Recording 审中-公开
标题翻译：用于微波辅助磁记录的具有垂直各向异性的CoFe / Ni多层膜
公开(公告)号：US20160284983A1
公开(公告)日：2016-09-29
申请号：US15162059
申请日：2016-05-23
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： H01L43/10 , G11C11/16 , G11B5/39 , H01L27/22 , H01L43/02
CPC分类号： G11B5/235 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11B5/1278 , G11B5/3153 , G11B5/33 , G11B5/3909 , G11B5/3967 , G11B2005/0024 , G11B2005/3996 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01F1/0579 , H01F10/325 , H01F10/3254 , H01F10/3259 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01F41/305 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/115
摘要： A spin transfer oscillator (STO) with a seed/FGL/spacer/SIL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)YFeCo laminated field generation layer (FGL). The spin injection layer (SIL) may be laminated with a (A1/A2)XFeCo configuration. The FeCo layer in the SIL is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The (A1/A2)Y laminate (y=5 to 30) in the FGL may be exchange coupled with a high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO is typically formed between a main pole and trailing shield in a write head.
摘要翻译：公开了具有种子/ FGL /间隔物/ SIL /封盖结构的自旋转移振荡器（STO），其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）织构的金属层，以增强垂直磁各向异性（A1 / A2）YFeCo层叠场产生层（FGL）中的（PMA）。自旋注入层（SIL）可以层叠有（A1 / A2）XFeCo构型。 SIL中的FeCo层与（A1 / A2）X层叠体交换（x为5〜50），以提高坚固性。 FGL中的（A1 / A2）Y层叠体（y = 5〜30）可以与高B层交换耦合，以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO通常形成在写入头中的主极和后屏蔽之间。

70. 发明授权

US09222994B2 Perpendicular spin torque oscillator FMR frequency measurement method 有权
标题翻译：垂直自旋转矩振荡器FMR频率测量方法
公开(公告)号：US09222994B2
公开(公告)日：2015-12-29
申请号：US13200148
申请日：2011-09-19
申请人： Yuchen Zhou , Kunliang Zhang , Min Li , Kenichi Takano , Joe Smyth , Moris Dovek , Akihiko Takeo , Tomomi Funayama , Masahiro Takashita , Masayuki Takagishi
发明人： Yuchen Zhou , Kunliang Zhang , Min Li , Kenichi Takano , Joe Smyth , Moris Dovek , Akihiko Takeo , Tomomi Funayama , Masahiro Takashita , Masayuki Takagishi
IPC分类号： G01R23/02 , G01R33/12 , G11B5/39 , H01L43/08 , G11C11/16
CPC分类号： G01R33/1284 , G11B5/3903 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L43/08
摘要： A method for measuring the frequency in a spin torque oscillator having at least a magnetic oscillation layer (MOL), junction layer, and magnetic reference layer (MRL) is disclosed. In a first embodiment, a small in-plane magnetic field is applied to the STO after a DC current is applied to excite the MOL into an oscillation state. The MRL has a perpendicular magnetization that is tilted slightly to give an in-plane magnetization component to serve as a reference layer for measuring the oscillation frequency of the MOL in-plane magnetization component. An AC voltage change is produced in the DC current as a result of variable STO resistance and directly correlates to MOL oscillation frequency. Alternatively, a field having both perpendicular and in-plane components may be applied externally or by forming the STO between two magnetic poles thereby producing an in-plane magnetization reference component in the MRL.
摘要翻译：公开了一种用于测量至少具有磁振荡层（MOL），结层和磁参考层（MRL）的自旋转矩振荡器中的频率的方法。在第一实施例中，在施加DC电流以将MOL激发到振荡状态之后，将小的面内磁场施加到STO。 MRL具有稍微倾斜的垂直磁化，以产生面内磁化分量，用作用于测量MOL面内磁化分量的振荡频率的参考层。作为可变STO电阻的结果，在DC电流中产生AC电压变化，并直接与MOL振荡频率相关。或者，具有垂直和平面内部分量的场可以在外部施加，或者通过在两个磁极之间形成STO，从而在MRL中产生面内磁化参考分量。

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