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    • 61. 发明申请
    • Magnetic memory cell, magnetic memory device, and magnetic memory device manufacturing method
    • 磁存储单元,磁存储器件和磁存储器件制造方法
    • US20070019462A1
    • 2007-01-25
    • US10550519
    • 2004-03-26
    • Joichiro EzakiKeiji KogaYuji Kakinuma
    • Joichiro EzakiKeiji KogaYuji Kakinuma
    • G11C11/00G11C11/14G11C11/15G11C5/06
    • H01L27/226H01L27/224H01L27/228
    • The present invention provides a magnetic memory device capable of reducing a loss of a magnetic field generated by currents flowing in a write line and performing writing stably, and a magnetic memory cell mounted on the magnetic memory device. Further, the invention provides a method for easily manufacturing such a magnetic memory device. A magnetic memory cell includes: stacked bodies each including a magneto-sensitive layer whose magnetization direction changes according to an external magnetic field, and constructed so that current flows in a direction perpendicular to a stack layer surface; and a toroidal magnetic layer disposed between the first and second stacked bodies so that the direction along the stack layer surface is set as an axial direction, and constructed so as to be penetrated by a plurality of conductors along the axial direction. Thus, strength reduction in a circulating magnetic field generated in a toroidal magnetic layer can be suppressed, and the magnetization direction of a magneto-sensitive layer in each of the first and second stacked bodies can be inverted by a smaller write current.
    • 本发明提供一种能够减少由写入线中流动的电流产生的磁场损耗并且稳定地进行写入的磁存储器件,以及安装在磁存储器件上的磁存储单元。 此外,本发明提供了一种用于容易地制造这种磁存储器件的方法。 磁存储单元包括:堆叠体,每个堆叠体包括磁敏层,其磁化方向根据外部磁场而变化,并且构造成使电流沿垂直于堆叠层表面的方向流动; 以及设置在第一和第二堆叠体之间的环形磁性层,使得沿堆叠层表面的方向被设定为轴向,并被构造成沿着轴向被多个导体穿透。 因此,可以抑制在环形磁性层中产生的循环磁场中的强度降低,并且通过较小的写入电流可以使第一和第二堆叠体中的每一个中的敏感层的磁化方向反转。
    • 63. 发明申请
    • Magnetoresistive element and magnetic memory device
    • 磁阻元件和磁存储器件
    • US20060193165A1
    • 2006-08-31
    • US10548830
    • 2004-03-12
    • Joichiro EzakiKeiji KogaYuji Kakinuma
    • Joichiro EzakiKeiji KogaYuji Kakinuma
    • G11C11/00
    • H01L27/222G11C11/15
    • A magnetoresistive effect element according to the present invention is comprised of a TMR element that is disposed at an intersection where a bit line and a write word line intersect with each other, in a manner sandwiched between the bit line and the write word line, and is configured such that it includes a sensitive magnetic layer whose magnetization direction is changed by a synthetic magnetic field of magnetic fields generated around the bit line and the write word line, and at the same time such that electric current flows in a direction perpendicular to the laminating surfaces thereof, and a magnetic material individually covering the bit line and the write word line at the intersection, thereby forming an annular magnetic layer associated with the bit line and an annular magnetic layer associated with the write word line. The sensitive magnetic layer comprises a magnetic material portion of the annular magnetic layers of the magnetic material, sandwiched by the bit line and the write word line.
    • 根据本发明的磁阻效应元件由夹在位线和写字线之间的方式设置在位线和写字线交叉的交点处的TMR元件构成, 被配置为使得其包括敏感磁性层,其磁化方向由在位线和写入字线周围产生的磁场的合成磁场而改变,并且同时电流沿垂直于 并且在交叉点处分别覆盖位线和写入字线的磁性材料,从而形成与位线相关联的环形磁性层和与写入字线相关联的环形磁性层。 敏感磁性层包括磁性材料的环形磁性层的磁性材料部分,夹在位线和写入字线之间。
    • 64. 发明申请
    • MAGNETIC MEMORY DEVICE AND METHOD OF READING THE SAME
    • 磁记忆装置及其读取方法
    • US20060120145A1
    • 2006-06-08
    • US10547508
    • 2004-03-12
    • Joichiro EzakiYuji KakinumaKeiji KogaShigekazu Sumita
    • Joichiro EzakiYuji KakinumaKeiji KogaShigekazu Sumita
    • G11C11/00
    • H01L27/228B82Y10/00G11C11/15H01L27/224H01L27/226
    • The present invention provides a magnetic memory device capable of performing reading operation with lower power consumption and at high read precision and a method of reading the magnetic memory device. Sense bit lines (21A, 21B) are provided in a bit line direction for each pair of magnetoresistive devices (12A, 12B) constructing a storage cell (12) and a read current is supplied. The read currents passed through the pair of magnetoresistive devices (12A, 12B) flow to the ground via a sense word line (31). Further, by providing a constant current circuit (108B) commonly for plural sense word lines (31), the sum of a pair of read currents passing through the pair of magnetoresistive devices (12A, 12B) in one storage cell constant, and information is read from the storage cell (12) on the basis of the difference between the pair of read currents. By sharing the constant current circuit (108B), variations in the sum of the pair of read currents can be reduced, and power consumption can be also reduced.
    • 本发明提供一种能够以较低的功耗和高读取精度执行读取操作的磁存储器件以及读取该磁性存储器件的方法。 对构成存储单元(12)的每对磁阻器件(12A,12B)的位线方向设置感测位线(21A,21B),并提供读取电流。 通过一对磁阻器件(12A,12B)的读取电流通过感测字线(31)流到地。 此外,通过为多个感测字线(31)共同设置恒流电路(108B),在一个存储单元中通过一对磁阻器件(12A,12B)的一对读电流的总和恒定, 并且基于一对读取电流之间的差,从存储单元(12)读取信息。 通过共享恒流电路(108B),可以减小一对读取电流之和的变化,并且还可以降低功耗。
    • 65. 发明申请
    • Magnetic memory and manufacturing method thereof
    • 磁记忆及其制造方法
    • US20060056232A1
    • 2006-03-16
    • US11218490
    • 2005-09-06
    • Keiji Koga
    • Keiji Koga
    • G11C11/00
    • H01L27/228B82Y10/00G11C11/1675
    • A magnetic memory capable of reducing diffusion of ferromagnetic material into semiconductor element area is provided. A magnetic memory 1 includes plural memory areas 3 disposed in two-dimension of m rows and n columns (m, n are integers of 2 or more). The magnetic memory 1 includes semiconductor layer 6 including drain area 32a and source area 32c for write transistor 32, magnetic material layer 8 including TMR element 4 and write wiring 31, and wiring layer 7 including bit wirings 13a and 13b and word wiring 14 being sandwiched between semiconductor layer 6 and magnetic material layer 8. Since wiring layer 7 is sandwiched between magnetic material layer 8 and semiconductor layer 6, the ferromagnetic material diffusing (migrates) from TMR element 4 hardly reaches to semiconductor layer 6. Thus, the diffusion of the ferromagnetic material into the drain area 32a and the source area 32c can be reduced.
    • 提供能够减少铁磁材料向半导体元件区域扩散的磁记忆体。 磁存储器1包括以m行n列(m,n为2以上的整数)的二维配置的多个存储区域3。 磁存储器1包括半导体层6,其包括漏极区域32a和写入晶体管32的源极区域32c,包括TMR元件4和写入布线31的磁性材料层8以及包括位线13a和13b的布线层7和字 布线14被夹在半导体层6和磁性材料层8之间。由于布线层7夹在磁性材料层8和半导体层6之间,从TMR元件4扩散(迁移)的铁磁材料几乎不到达半导体层6。 可以减少铁磁材料向漏极区域32a和源极区域32c的扩散。