专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US08283690B2 Light emitting device having light extraction structure and method for manufacturing the same 有权
标题翻译：具有光提取结构的发光器件及其制造方法
公开(公告)号：US08283690B2
公开(公告)日：2012-10-09
申请号：US13214871
申请日：2011-08-22
申请人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
发明人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
IPC分类号： H01L33/02 , H01L33/10
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0083 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
摘要翻译：公开了一种能够实现发光效率提高和可靠性提高的氮化物系发光器件。发光器件包括半导体层和布置在半导体层上并由折射率等于或高于半导体层的反射率的材料制成的光提取层。

62. 发明授权

US08203881B2 Nonvolatile memory device, method of operating nonvolatile memory device and memory system including nonvolatile memory device 有权
标题翻译：非易失性存储器件，非易失性存储器件的操作方法和包括非易失性存储器件的存储器系统
公开(公告)号：US08203881B2
公开(公告)日：2012-06-19
申请号：US12656714
申请日：2010-02-16
申请人： Nam-Hoon Kim , Jun-Ho Jang
发明人： Nam-Hoon Kim , Jun-Ho Jang
IPC分类号： G11C11/34 , G11C16/04 , G11C16/06
CPC分类号： G11C16/26
摘要： The method of operating the nonvolatile memory device may include performing a read operation on a first address region, comparing a read time of the first address region with a reference time, and storing read data from the read from the first address region in a second address region based on the comparison result.
摘要翻译：操作非易失性存储器件的方法可以包括对第一地址区域执行读取操作，将第一地址区域的读取时间与参考时间进行比较，以及将来自第一地址区域的读取数据存储在第二地址区域基于比较结果。

63. 发明授权

US08203162B2 Light emitting device having vertical structrue and method for manufacturing the same 有权
标题翻译：具有垂直结构的发光器件及其制造方法
公开(公告)号：US08203162B2
公开(公告)日：2012-06-19
申请号：US12656612
申请日：2010-02-04
申请人： Jun Ho Jang , Hyun Jae Lee
发明人： Jun Ho Jang , Hyun Jae Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/62 , H01L2224/24
摘要： A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of damping impact generated during a substrate separation process and achieving an improvement in mass productivity, are disclosed. The light emitting device includes a semiconductor layer having a multilayer structure, a first electrode arranged at one surface of the semiconductor layer, a metal support arranged on the first electrode, and an impact damping layer arranged between the first electrode and the metal support, and made of a metal having a ductility higher than a ductility of a metal for the metal support.
摘要翻译：公开了具有垂直结构的发光器件及其制造方法，其能够抑制在衬底分离过程中产生的冲击并实现批量生产率的提高。发光器件包括具有多层结构的半导体层，布置在半导体层的一个表面的第一电极，布置在第一电极上的金属支撑体和布置在第一电极和金属支撑体之间的冲击阻尼层，以及由具有高于用于金属支撑件的金属的延展性的延展性的金属制成。

64. 发明授权

US08166234B2 Method of fabricating systems including heat-sensitive memory devices 有权
标题翻译：制造包括热敏记忆装置的系统的方法
公开(公告)号：US08166234B2
公开(公告)日：2012-04-24
申请号：US12631267
申请日：2009-12-04
申请人： Jun-Ho Jang , Woonjae Chung , Hungjun An
发明人： Jun-Ho Jang , Woonjae Chung , Hungjun An
IPC分类号： G06F13/00
CPC分类号： G06F9/4401 , H01L27/115
摘要： A system code is stored in a first nonvolatile memory. The first nonvolatile memory and a second nonvolatile memory are heated during assembly of an electronic device including the first nonvolatile memory and a second nonvolatile memory. The heating is to a temperature sufficient to change a state of at least some memory cells in the second nonvolatile memory device. After the heating, the system code stored in the first nonvolatile memory is copied into the second nonvolatile memory. The first nonvolatile memory may he less vulnerable to temperature-related data alteration than the second nonvolatile memory. For example, the first nonvolatile memory may include a NAND flash memory and the second nonvolatile memory may include a variable resistance memory.
摘要翻译：系统码存储在第一非易失性存储器中。在包括第一非易失性存储器和第二非易失性存储器的电子设备的组装期间，第一非易失性存储器和第二非易失性存储器被加热。加热到足以改变第二非易失性存储器件中的至少一些存储单元的状态的温度。在加热之后，存储在第一非易失性存储器中的系统代码被复制到第二非易失性存储器中。与第二非易失性存储器相比，第一非易失性存储器可能不太容易受到与温度有关的数据改变的影响。例如，第一非易失性存储器可以包括NAND闪存，并且第二非易失性存储器可以包括可变电阻存储器。

65. 发明申请

US20120018700A1 Light Emitting Diode Having Vertical Topology And Method Of Making The Same 有权
标题翻译：具有垂直拓扑的发光二极管及其制作方法
公开(公告)号：US20120018700A1
公开(公告)日：2012-01-26
申请号：US13219356
申请日：2011-08-26
申请人： Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
发明人： Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
IPC分类号： H01L33/04
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/0079 , H01L33/04 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2933/0016 , H01L2933/0083
摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
摘要翻译：具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

66. 发明申请

US20110271041A1 ELECTRONIC DEVICE COMPRISING FLASH MEMORY AND RELATED METHOD OF HANDLING PROGRAM FAILURES 审中-公开
标题翻译：包含闪存的电子设备和处理程序故障的相关方法
公开(公告)号：US20110271041A1
公开(公告)日：2011-11-03
申请号：US13074224
申请日：2011-03-29
申请人： Mi-Hyang LEE , Jun-Ho JANG , Seung-Jin JUNG
发明人： Mi-Hyang LEE , Jun-Ho JANG , Seung-Jin JUNG
IPC分类号： G06F12/02
CPC分类号： G06F12/0868 , G06F12/0246 , G06F2212/214
摘要： A storage device performs a program operation to store program data in a selected memory block of a flash memory. The storage device allocates a reserved area of the flash memory as a free block upon detecting that a program failure has occurred in the program operation, reads the program data from a cache latch in a page buffer of the flash memory, copies valid data stored in the selected memory block to a first area of the free block, and reprograms the program data read from the cache latch to a second area of the free block.
摘要翻译：存储装置执行程序操作以将程序数据存储在所选择的闪速存储器的存储块中。存储设备在检测到程序操作中发生程序故障时，将闪存的保留区域分配为空闲块，从闪速存储器的页面缓冲器中的高速缓存锁存器中读取程序数据，将存储在所选择的存储器块到自由块的第一区域，并且将从高速缓冲存储器锁存器读取的程序数据重新编程到自由块的第二区域。

67. 发明申请

US20110191501A1 SYSTEMS AND METHODS OF TRANSFERRING DATA BETWEEN A DISK DEVICE AND AN EXTERNAL STORAGE DEVICE 有权
标题翻译：传输设备和外部存储设备之间的数据的系统和方法
公开(公告)号：US20110191501A1
公开(公告)日：2011-08-04
申请号：US13019424
申请日：2011-02-02
申请人： Jun-ho JANG , Keung-youn Cho
发明人： Jun-ho JANG , Keung-youn Cho
IPC分类号： G06F3/00
CPC分类号： G06F3/00
摘要： Provided are systems and methods to communicate data transfer of data between a disk device and an external storage device. A host can generate a control command to communicate with an external storage device, and a disk device to receive the control command from a host to identify and communicate with an external storage device when connected to the external storage device and to configure the external storage device by assigning an ID code to each storage area of the external storage device.
摘要翻译：提供了在盘设备和外部存储设备之间传送数据的数据传输的系统和方法。主机可以生成与外部存储设备进行通信的控制命令，以及磁盘设备，用于从主机接收控制命令，以在连接到外部存储设备时识别和与外部存储设备通信并配置外部存储设备通过向外部存储装置的每个存储区域分配ID代码。

68. 发明授权

US07834374B2 Light emitting diode having vertical topology and method of making the same 有权
标题翻译：具有垂直拓扑的发光二极管及其制造方法
公开(公告)号：US07834374B2
公开(公告)日：2010-11-16
申请号：US11708133
申请日：2007-02-20
申请人： Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
发明人： Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
IPC分类号： H01L33/40 , H01L33/44
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/0079 , H01L33/04 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2933/0016 , H01L2933/0083
摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
摘要翻译：具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

69. 发明申请

US20100208521A1 Nonvolatile memory device, method of operating nonvolatile memory device and memory system including nonvolatile memory device 有权
标题翻译：非易失性存储器件，非易失性存储器件的操作方法和包括非易失性存储器件的存储器系统
公开(公告)号：US20100208521A1
公开(公告)日：2010-08-19
申请号：US12656714
申请日：2010-02-16
申请人： Nam-Hoon Kim , Jun-Ho Jang
发明人： Nam-Hoon Kim , Jun-Ho Jang
IPC分类号： G11C16/06 , G11C16/04
CPC分类号： G11C16/26
摘要： The method of operating the nonvolatile memory device may include performing a read operation on a first address region, comparing a read time of the first address region with a reference time, and storing read data from the read from the first address region in a second address region based on the comparison result.
摘要翻译：操作非易失性存储器件的方法可以包括对第一地址区域执行读取操作，将第一地址区域的读取时间与参考时间进行比较，以及将来自第一地址区域的读取数据存储在第二地址区域基于比较结果。

70. 发明申请

US20100153628A1 METHOD OF FABRICATING SYSTEMS INCLUDING HEAT-SENSITIVE MEMORY DEVICES 有权
标题翻译：包含热敏记忆体装置的制造方法
公开(公告)号：US20100153628A1
公开(公告)日：2010-06-17
申请号：US12631267
申请日：2009-12-04
申请人： Jun-Ho Jang , Woonjae Chung , Hungjun An
发明人： Jun-Ho Jang , Woonjae Chung , Hungjun An
IPC分类号： G06F12/02 , G11C11/00 , G11C7/00 , G11C16/06 , G11C7/10
CPC分类号： G06F9/4401 , H01L27/115
摘要： A system code is stored in a first nonvolatile memory. The first nonvolatile memory and a second nonvolatile memory are heated during assembly of an electronic device including the first nonvolatile memory and a second nonvolatile memory. The heating is to a temperature sufficient to change a state of at least some memory cells in the second nonvolatile memory device. After the heating, the system code stored in the first nonvolatile memory is copied into the second nonvolatile memory. The first nonvolatile memory may he less vulnerable to temperature-related data alteration than the second nonvolatile memory. For example, the first nonvolatile memory may include a NAND flash memory and the second nonvolatile memory may include a variable resistance memory.
摘要翻译：系统代码存储在第一非易失性存储器中。在包括第一非易失性存储器和第二非易失性存储器的电子设备的组装期间，第一非易失性存储器和第二非易失性存储器被加热。加热到足以改变第二非易失性存储器件中的至少一些存储单元的状态的温度。在加热之后，存储在第一非易失性存储器中的系统代码被复制到第二非易失性存储器中。与第二非易失性存储器相比，第一非易失性存储器可能不太容易受到与温度有关的数据改变的影响。例如，第一非易失性存储器可以包括NAND闪存，并且第二非易失性存储器可以包括可变电阻存储器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式