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61. 发明授权

US08148781B2 Method and structures of monolithically integrated ESD suppression device 有权
标题翻译：单片集成ESD抑制器的方法和结构
公开(公告)号：US08148781B2
公开(公告)日：2012-04-03
申请号：US12511002
申请日：2009-07-28
申请人： Xiao (Charles) Yang
发明人： Xiao (Charles) Yang
IPC分类号： H01L27/12 , H01L31/0392
CPC分类号： H01L27/0248 , H01L23/60 , H01L24/05 , H01L2924/14 , H01L2924/00
摘要： This present invention relates in general to protection of integrated circuit chips, and more particularly, to a micromachined suppression device for protecting integrated circuit chips from electrostatic discharges. The proposed ESD suppression device consists of conductive pillars are dispersed in a dielectric material. The gaps between each pillar behave like spark gaps when a high voltage ESD pulse occurs. When the voltage of the pulse reaches the “trigger voltage” these gaps spark over, creating a very low resistance path. In normal operation, the leakage current and the capacitance is very low, due to the physical gaps between the conductive pillars. The proposed ESD suppression device is fabricated using micromachining techniques to be on-chip with device ICs.
摘要翻译：本发明一般涉及集成电路芯片的保护，更具体地，涉及用于保护集成电路芯片免受静电放电的微加工抑制装置。所提出的ESD抑制装置由导电柱分散在电介质材料中。当发生高电压ESD脉冲时，每个支柱之间的间隙就像火花隙。当脉冲电压达到“触发电压”时，这些间隙发生火花，产生非常低的电阻路径。在正常工作中，由于导电柱之间的物理间隙，漏电流和电容非常低。所提出的ESD抑制装置是使用微加工技术制造的，与芯片集成在一起。

62. 发明授权

US10961119B1 MEMS device with stiction recover and methods 有权
公开(公告)号：US10961119B1
公开(公告)日：2021-03-30
申请号：US15877999
申请日：2018-01-23
申请人： mCube, Inc.
发明人： Shih-Wei Lee , Wen-Chih Chen
IPC分类号： B81C1/00 , G01P15/08 , G01P15/125 , B81B7/00
摘要： A MEMS device comprising a substrate comprising a die and a plurality of side-walls disposed upon the MEMS die, a proof-mass coupled to the substrate, the proof-mass is configured to be displaced within a first plane that is parallel to the die, wherein the proof-mass is configured to contact at least a sidewall, wherein the proof-mass is configured to adhere to the side-wall as a result of stiction forces, a driving circuit configured to provide a driving voltage in response to a driving signal indicating that the proof-mass is adhered to the side-wall, and an actuator coupled to the driving circuit disposed upon the side-wall, wherein the actuator is configured to receive a driving voltage and to provide an actuator force to the proof mass within the first plane in a direction away from the side-wall in response to the driving voltage, wherein the actuator force exceeds the stiction forces.

63. 发明授权

US10393526B2 Integrated MEMS inertial sensing device 有权
公开(公告)号：US10393526B2
公开(公告)日：2019-08-27
申请号：US15365851
申请日：2016-11-30
申请人： mCube Inc.
发明人： Ali J. Rastegar , Sanjay Bhandari
IPC分类号： G01C19/5776 , G01C19/5712 , G01C19/5783
摘要： An integrated MEMS inertial sensing device can include a MEMS inertial sensor with a drive loop configuration overlying a CMOS IC substrate. The CMOS IC substrate can include an AGC loop circuit coupled to the MEMS inertial sensor. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. A benefit of the AGC loop is that the charge pump of the HV driver inherently includes a ‘time constant’ for charging up of its output voltage. This incorporates the Low pass functionality in to the AGC loop without requiring additional circuitry.

64. 发明授权

US10197587B2 Device and method for using time rate of change of sensor data to determine device rotation 有权
公开(公告)号：US10197587B2
公开(公告)日：2019-02-05
申请号：US14550888
申请日：2014-11-21
申请人： mCube Inc.
发明人： Joseph M. Kelly
IPC分类号： G01C25/00 , G01C19/00 , G01P3/00 , G01P15/08
摘要： A computer-implemented method for determining rotational rate of a computer system programmed to perform the method includes determining in a physical perturbation sensor in the computer system, a plurality of instantaneous field measurements with respect to a reference field, at a first time and a second time, determining in the computer system, a plurality of rates of change associated with the physical perturbation sensor in response to the plurality of instantaneous field measurements at the first time and the second time, determining in the computer system, an plurality of estimated rotational rates for the computer system in response to the plurality of rates of change, and performing in the computer system, an operation in response to the plurality of estimated rotational rates.

65. 发明授权

US10175778B1 Method and apparatus for real-time motion direction detection via acceleration-magnetic fusion 有权
公开(公告)号：US10175778B1
公开(公告)日：2019-01-08
申请号：US15194459
申请日：2016-06-27
申请人： mCube, Inc.
发明人： James Wang , Chenglong Fu , Aga Hsu , Kevin Huang
IPC分类号： G06F3/03 , G06F3/0346 , G01C19/00 , G01P15/18 , G01V3/40 , G09G5/38 , G09G5/34
摘要： A method for a computing device includes determining in a magnetometer, magnetic data in response to a physical perturbation, determining in an accelerometer, acceleration data in response to the physical perturbation, determining with a processor, computed parameters in response to the magnetic data and the acceleration data, wherein the computed parameters includes a first and a second computed parameter, determining with the processor, an initial motion direction indicator in response to a weighted combination of the first computed parameter and the second computed parameter, determining with the processor, a motion direction indicator in response to the initial motion direction indicator, determining with the processor, a function to perform in response to the motion direction indicator, and displaying on a display of the portable computing device with the processor, a graphic image in response to the function.

66. 发明授权

US10106399B1 Multi-layer single chip MEMS WLCSP fabrication 有权
公开(公告)号：US10106399B1
公开(公告)日：2018-10-23
申请号：US15787532
申请日：2017-10-18
申请人： mCube, Inc.
发明人： Chien Chen Lee , Tzu Feng Chang
IPC分类号： B81C1/00
摘要： A method for fabricating a WLCSP device includes receiving a MEMS cap wafer having a first radius, a MEMS device wafer having a second radius, and a CMOS substrate wafer having a third radius, wherein the first radius is smaller than the second radius, and wherein the second radius is smaller than the third radius, disposing the MEMS cap wafer approximately concentrically upon the MEMS device wafer, disposing the MEMS device wafer approximately concentrically upon the CMOS substrate wafer, disposing a spacer structure upon the MEMS device wafer, wherein the spacer structure comprises a plurality of proximity spacers disposed upon a proximity flag, wherein the plurality of proximity spacers are disposed upon the MEMS device wafer, disposing a mask layer in contact to the plurality of proximity spacers, above and substantially parallel to the MEMS cap wafer, and forming a pattern upon the MEMS cap wafer using the mask layer.

67. 发明授权

US09725304B2 Method to package multiple MEMS sensors and actuators at different gases and cavity pressures 有权
公开(公告)号：US09725304B2
公开(公告)日：2017-08-08
申请号：US14887631
申请日：2015-10-20
申请人： mCube Inc.
发明人： Wenhua Zhang , Shingo Yoneoka
IPC分类号： B81B7/02 , B81C1/00 , B81B7/00 , H01L21/56 , H01L41/113
CPC分类号： B81B7/02 , B81B7/0041 , B81B2201/0235 , B81B2201/0242 , B81B2201/0292 , B81C1/00293 , B81C1/00333 , B81C2203/0109 , B81C2203/0145 , B81C2203/0154 , H01L21/56 , H01L41/1132
摘要： A semiconductor device having multiple MEMS (micro-electro mechanical system) devices includes a semiconductor substrate having a first MEMS device and a second MEMS device, and an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity. The encapsulation substrate is bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity. The second cavity includes at least one access channel at a recessed region in a sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate. The access channel is covered by a thin film. The first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure. The second air pressure is different from the first air pressure.

68. 发明授权

US09677906B2 Method and device for calibrating a magnetometer using partial sampling 有权
公开(公告)号：US09677906B2
公开(公告)日：2017-06-13
申请号：US14242838
申请日：2014-04-01
申请人： MCube Inc.
发明人： Andy Milota
IPC分类号： G01C25/00 , G01C17/38 , G01R33/00
CPC分类号： G01C25/00 , G01C17/38 , G01R33/0035
摘要： A method and device for calibrating a magnetometer device. In an embodiment, the present invention provides a method to automatically calibrate a magnetometer device in the background with only limited movement in each of the three axis (approximately 20 degrees in each direction). A device implementing the present method will never get stuck in a lock-up state. Embodiments of the present invention provide a conservative and accurate magnetometer status indicator that is essential for indoor navigation using inertial sensors. The implemented algorithm is relatively low computationally intensive and is intelligent enough to know when it has the right kind and right amount of magnetic data before it initiates a calibration.

69. 发明授权

US09612119B2 Integrated inertial sensing device 有权
公开(公告)号：US09612119B2
公开(公告)日：2017-04-04
申请号：US14158765
申请日：2014-01-17
申请人： mCube Inc.
发明人： Sanjay Bhandari , Ali J. Rastegar , Sudheer S. Sridharamurthy
IPC分类号： G01C19/00 , G01P3/44 , G01P9/00 , G01P15/08 , G01C19/5776
CPC分类号： G01C19/5776
摘要： A system can include a MEMS gyroscope having a MEMS resonator overlying a CMOS IC substrate. The CMOS IC substrate can include an AGC loop circuit coupled to the MEMS gyroscope. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. A benefit of the AGC loop is that the charge pump of the HV driver inherently includes a ‘time constant’ for charging up of its output voltage. The system incorporates the Low pass functionality in to the AGC loop without requiring additional circuitry.

70. 发明授权

US09540232B2 Method and structure of MEMS WLCSP fabrication 有权
标题翻译： MEMS WLCSP制作的方法和结构
公开(公告)号：US09540232B2
公开(公告)日：2017-01-10
申请号：US14507177
申请日：2014-10-06
申请人： mCube Inc.
发明人： Chien Chen Lee
IPC分类号： B81C1/00
CPC分类号： B81C1/00301 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2201/0264 , B81C2203/0109 , B81C2203/0154
摘要： A method for fabricating a MEMS-IC device structure can include receiving a CMOS substrate comprising a plurality of CMOS circuits and a surface portion. A MEMS substrate having at least one MEMS device can be received and coupled to the CMOS substrate. The MEMS substrate and the surface portion of the CMOS substrate can be encapsulated with a molding material, which forms a top surface. A first plurality of vias can be created in the molding material from the top surface to the surface portion of the CMOS substrate. A conductive material can be disposed within the first plurality of vias such that the conductive material is electrically coupled to a portion of the CMOS substrate. A plurality of interconnects can be formed from the conductive material to the top surface of the molding material and a plurality of solder balls can be formed upon these interconnects.
摘要翻译：制造MEMS-IC器件结构的方法可以包括接收包括多个CMOS电路和表面部分的CMOS衬底。具有至少一个MEMS器件的MEMS衬底可被接收并耦合到CMOS衬底。 MEMS衬底和CMOS衬底的表面部分可以用形成顶表面的成型材料封装。可以在模制材料中从CMOS衬底的顶表面到表面部分形成第一多个通孔。导电材料可以设置在第一多个通孔内，使得导电材料电耦合到CMOS衬底的一部分。可以从导电材料形成多个互连件到模制材料的顶表面，并且可以在这些互连件上形成多个焊球。

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