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61. 发明授权

US07038174B2 Heating device for heating semiconductor wafers in thermal processing chambers 有权
标题翻译：用于在热处理室中加热半导体晶片的加热装置
公开(公告)号：US07038174B2
公开(公告)日：2006-05-02
申请号：US10903424
申请日：2004-07-30
申请人： Arnon Gat , Bob Bogart
发明人： Arnon Gat , Bob Bogart
IPC分类号： F27B5/14
CPC分类号： H01L21/67115 , F27B5/04 , F27B5/14 , F27B17/0025 , F27D19/00
摘要： A novel apparatus for heat treating semiconductor wafers includes a heating device which comprises an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. The tuning devices adjust the overall irradiance distribution of the light energy sources. The tuning devices can either be active sources of light energy or passive sources which reflect, refract, or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.
摘要翻译：用于热处理半导体晶片的新型装置包括加热装置，其包括用于将光能发射到晶片上的光能源的组件。光能源可以放置在各种配置中。调谐装置调节光能源的整体辐照度分布。调谐装置可以是活跃的光能源或反射，折射或吸收光能的无源光源。例如，在一个实施例中，调谐装置可以包括与聚焦透镜间隔开的灯，其设计成将确定的光能量聚焦到被加热晶片的特定位置上。

62. 发明申请

US20050268567A1 Wedge-shaped window for providing a pressure differential 审中-公开
标题翻译：楔形窗口提供压差
公开(公告)号：US20050268567A1
公开(公告)日：2005-12-08
申请号：US10631516
申请日：2003-07-31
申请人： Daniel Devine , Young Lee
发明人： Daniel Devine , Young Lee
IPC分类号： A47H20060101 , E06B3/00
CPC分类号： H01L21/67115 , H01L21/6719
摘要： As part of a chamber configuration, a window arrangement includes a chamber having an interior. The chamber forms a window aperture having an aperture edge. A window, having a pair of opposing major surfaces and a peripheral sidewall configuration extending between the opposing major surfaces, is received in the window aperture with the peripheral sidewall configuration supported against the aperture edge such that the peripheral sidewall configuration and the aperture edge cooperate in a way which converts at least a portion of a biasing force, that is applied generally normal to the opposing major surfaces of the window, to a direction that is different from, oblique to, or sloped with respect to an applied direction of the biasing force.
摘要翻译：作为室配置的一部分，窗口装置包括具有内部的室。该室形成具有孔边缘的窗孔。具有一对相对的主表面和在相对的主表面之间延伸的外围侧壁结构的窗口被容纳在窗口中，其中外围侧壁结构支撑在孔边缘上，使得周边侧壁构造和孔边缘配合在将通常垂直于窗的相对主表面施加的偏压力的至少一部分转换成相对于施加的偏置力的方向倾斜或倾斜的方向的方式。

63. 发明授权

US06970644B2 Heating configuration for use in thermal processing chambers 有权
标题翻译：加热配置用于热处理室
公开(公告)号：US06970644B2
公开(公告)日：2005-11-29
申请号：US09747522
申请日：2000-12-21
申请人： Zion Koren , Conor Patrick O'Carroll , Shuen Chun Choy , Paul Janis Timans , Rudy Santo Tomas Cardema , James Tsuneo Taoka , Arieh A. Strod
发明人： Zion Koren , Conor Patrick O'Carroll , Shuen Chun Choy , Paul Janis Timans , Rudy Santo Tomas Cardema , James Tsuneo Taoka , Arieh A. Strod
IPC分类号： C23C16/48 , C30B25/10 , C30B31/12 , H01L21/00 , F26B3/30
CPC分类号： H01L21/67115 , C23C16/481 , C30B25/105 , C30B31/12
摘要： An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.
摘要翻译：公开了一种用于热处理半导体晶片的设备。该装置包括加热装置，其包含用于将光能发射到晶片上的组装线性灯。线性灯可以放置在各种配置中。根据本发明，用于调节光能源的总体辐照度分布的调谐装置包括在加热装置中。调谐装置可以是例如灯或激光器。

64. 发明授权

US06884719B2 Method for depositing a coating having a relatively high dielectric constant onto a substrate 失效
标题翻译：将具有较高介电常数的涂层沉积到基底上的方法
公开(公告)号：US06884719B2
公开(公告)日：2005-04-26
申请号：US10101539
申请日：2002-03-19
申请人： Jane Chang , You-Sheng Lin , Avishai Kepten , Michael Sendler , Sagy Levy , Robin Bloom
发明人： Jane Chang , You-Sheng Lin , Avishai Kepten , Michael Sendler , Sagy Levy , Robin Bloom
IPC分类号： B05D3/02 , C23C16/00 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/52 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/469
CPC分类号： C23C16/45527 , C23C16/40 , C23C16/45525 , C23C16/52 , H01L21/3141 , H01L21/31604 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. The substrate is subjected to one or more reaction cycles. For instance, in a typical reaction cycle, the substrate is heated to a certain deposition temperature. Thereafter, in one embodiment, one or more reactive organo-metallic gas precursors are supplied to the reactor vessel. An oxidizing gas is also supplied to the substrate at a certain oxidizing temperature to oxidize and/or densify the layers. As a result, a metal oxide coating is formed that has a thickness equal to at least about one monolayer, and in some instances, two or more monolayers. The dielectric constant of the resulting metal oxide coating is often greater than about 4, and in some instance, is from about 10 to about 80.
摘要翻译：提供了一种用于在诸如半导体晶片的衬底上沉积高k电介质涂层的方法。将基板进行一个或多个反应循环。例如，在典型的反应循环中，将基板加热到一定的沉积温度。此后，在一个实施方案中，将一种或多种反应性有机金属气体前体供应至反应器容器。在一定的氧化温度下，氧化气体也被提供给衬底以氧化和/或致密化层。结果，形成具有等于至少约一个单层的厚度的金属氧化物涂层，并且在一些情况下形成两个或更多个单层。所得到的金属氧化物涂层的介电常数通常大于约4，在某些情况下，介电常数为约10至约80。

65. 发明授权

US06849831B2 Pulsed processing semiconductor heating methods using combinations of heating sources 有权
公开(公告)号：US06849831B2
公开(公告)日：2005-02-01
申请号：US10209155
申请日：2002-07-30
申请人： Paul J. Timans , Narasimha Acharya
发明人： Paul J. Timans , Narasimha Acharya
IPC分类号： H05B3/00 , C30B31/12 , F27D11/02 , H01L21/00 , H01L21/26 , H01L21/268 , H05B1/02 , H05B3/68 , F22B5/14
CPC分类号： H01L21/67248 , C30B31/12 , H01L21/67115 , Y10S438/928
摘要： Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.

66. 发明申请

US20040142114A1 Electroless plating solution and process 失效
公开(公告)号：US20040142114A1
公开(公告)日：2004-07-22
申请号：US10348612
申请日：2003-01-21
申请人： Mattson Technology, Inc.
发明人： Bob Kong , Nanhai Li
IPC分类号： B05D005/12 , B05D001/18 , B05D003/10 , C23C018/34 , C23C018/36 , C23C018/52
CPC分类号： C23C18/1637 , C23C18/50 , H01L21/288
摘要： Electroless plating solutions are disclosed for forming metal alloys, such as cobalt-tungsten alloys. In accordance with the present invention, the electroless plating solutions may be formulated so as not to contain any alkali metals. Further, the solutions can be formulated without the use of tetramethylammonium hydroxide. In a further embodiment, a plating solution can be formulated that does not require the use of a catalyst, such as a palladium catalyst prior to depositing the metal alloy on a substrate.

67. 发明申请

US20040084437A1 Apparatus and method for reducing stray light in substrate processing chambers 有权
标题翻译：用于减少衬底处理室中杂散光的装置和方法
公开(公告)号：US20040084437A1
公开(公告)日：2004-05-06
申请号：US10288271
申请日：2002-11-05
申请人： Mattson Technology, Inc.
发明人： Paul Janis Timans
IPC分类号： F27D011/00 , F27B005/14
CPC分类号： H01L21/67248 , F27B5/04 , F27B17/0025 , H01L21/67115
摘要： A method and apparatus for heating semiconductor wafers in thermal processing chambers is disclosed. The apparatus includes a non-contact temperature measurement system that utilizes radiation sensing devices, such as pyrometers, to determine the temperature of the wafer during processing. The radiation sensing devices determine the temperature of the wafer by monitoring the amount of radiation being emitted by the wafer at a particular wavelength. In accordance with the present invention, a spectral filter is included in the apparatus for filtering light being emitted by lamps used to heat the wafer at the wavelength at which the radiation sensing devices operate. The spectral filter includes a light absorbing agent such as a rare earth element, an oxide of a rare earth element, a light absorbing dye, a metal, or a semiconductor material.
摘要翻译：公开了一种在热处理室中加热半导体晶片的方法和装置。该装置包括非接触式温度测量系统，其利用诸如高温计的辐射传感装置来确定处理期间晶片的温度。辐射感测装置通过监测晶片在特定波长处发射的辐射量来确定晶片的温度。根据本发明，在用于过滤由用于在辐射感测装置工作的波长处加热晶片的灯发出的光的装置中包括光谱滤波器。光谱滤光器包括诸如稀土元素的光吸收剂，稀土元素的氧化物，光吸收染料，金属或半导体材料。

68. 发明授权

US06143129A Inductive plasma reactor 失效
公开(公告)号：US06143129A
公开(公告)日：2000-11-07
申请号：US118281
申请日：1998-07-17
申请人： Stephen E. Savas , Brad S. Mattson , Martin L. Hammond , Steven C. Selbrede
发明人： Stephen E. Savas , Brad S. Mattson , Martin L. Hammond , Steven C. Selbrede
IPC分类号： H05H1/46 , C23C16/50 , C23F4/00 , H01J37/32 , H01L21/027 , H01L21/302 , H01L21/3065
CPC分类号： H01J37/32871 , H01J37/321 , H01J37/32357 , H01J37/32422 , H01J37/32706 , Y10S156/912
摘要： A plasma reactor and methods for processing semiconductor wafers are described. Gases are introduced into a reactor chamber. An induction coil surrounds the reactor chamber. RF power is applied to the induction coil and is inductively coupled into the reactor chamber causing a plasma to form. A split Faraday shield is interposed between the induction coil and the reactor chamber to substantially block the capacitive coupling of energy into the reactor chamber which may modulate the plasma potential. The configuration of the split Faraday shield may be selected to control the level of modulation of the plasma potential. For etch processes, a separate powered electrode may be used to accelerate ions toward a wafer surface. For isotropic etching processes, charged particles may be filtered from the gas flow, while a neutral activated species passes unimpeded to a wafer surface.

69. 发明授权

US5983828A Apparatus and method for pulsed plasma processing of a semiconductor substrate 失效
标题翻译：用于半导体衬底脉冲等离子体处理的装置和方法
公开(公告)号：US5983828A
公开(公告)日：1999-11-16
申请号：US727209
申请日：1996-10-08
申请人： Stephen E. Savas
发明人： Stephen E. Savas
IPC分类号： H01J37/32 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32706 , H01J2237/004 , H01J2237/3345
摘要： Apparatus and method for an improved etch process. A power source alternates between high and low power cycles to produce and sustain a plasma discharge. Preferably, the high power cycles couple sufficient power into the plasma to produce a high density of ions (>10.sup.11 cm.sup.-3) for etching. Preferably, the low power cycles allow electrons to cool off to reduce the average random (thermal) electron velocity in the plasma. Preferably, the low power cycle is limited in duration as necessary to prevent excessive plasma loss to the walls or due to recombination of negative and positive ions. It is an advantage of these and other aspects of the present invention that average electron thermal velocity is reduced, so fewer electrons overcome the plasma sheath and accumulate on substrate or mask layer surfaces. A separate power source alternates between high and low power cycles to accelerate ions toward the substrate being etched. In one embodiment, a strong bias is applied to the substrate in short bursts. Preferably, multiple burst occur during the average transit time for an ion to cross the plasma sheath and reach the substrate surface. Ions are pulsed toward the surface for etching. These ions are not deflected into sidewalls as readily as ions in conventional low energy etch processes due to reduced charge buildup and the relatively low duty cycle of power used to pulse ions toward the substrate surface.
摘要翻译：用于改进蚀刻工艺的装置和方法。电源在高功率和低功率周期之间交替产生和维持等离子体放电。优选地，高功率循环将足够的功率耦合到等离子体中以产生用于蚀刻的高密度离子（+ E，ut1 + EE1011cm-3）。优选地，低功率周期允许电子冷却以降低等离子体中的平均随机（热）电子速度。优选地，低功率循环的持续时间受到限制，以防止对壁的过度等离子体损失或由于负离子和正离子的复合。本发明的这些和其它方面的优点是平均电子热速度降低，因此较少的电子克服了等离子体鞘并积聚在衬底或掩模层表面上。单独的电源在高功率和低功率循环之间交替，以将离子加速朝向被蚀刻的衬底。在一个实施例中，以短脉冲串将强偏压施加到衬底。优选地，在平均通过时间期间发生多次爆发，以使离子穿过等离子体护套并到达衬底表面。离子脉冲朝表面进行蚀刻。这些离子由于电荷累积减少和脉冲离子朝向衬底表面的相对低的功率占空比而不会像传统的低能量蚀刻工艺中的离子一样容易地偏转到侧壁中。

70. 发明授权

US5811022A Inductive plasma reactor 失效
公开(公告)号：US5811022A
公开(公告)日：1998-09-22
申请号：US340696
申请日：1994-11-15
申请人： Stephen E. Savas , Brad S. Mattson
发明人： Stephen E. Savas , Brad S. Mattson
IPC分类号： H05H1/46 , C23C16/50 , C23F4/00 , H01J37/32 , H01L21/027 , H01L21/302 , H01L21/3065 , H05H1/00
CPC分类号： H01J37/32871 , H01J37/321 , H01J37/32357 , H01J37/32422 , H01J37/32706 , Y10S156/912
摘要： A plasma reactor and methods for processing semiconductor wafers are described. Gases are introduced into a reactor chamber. An induction coil surrounds the reactor chamber. RF power is applied to the induction coil and is inductively coupled into the reactor chamber causing a plasma to form. A split Faraday shield is interposed between the induction coil and the reactor chamber to substantially block the capacitive coupling of energy into the reactor chamber which may modulate the plasma potential. The configuration of the split Faraday shield may be selected to control the level of modulation of the plasma potential. For etch processes, a separate powered electrode may be used to accelerate ions toward a wafer surface. For isotropic etching processes, charged particles may be filtered from the gas flow, while a neutral activated species passes unimpeded to a wafer surface.

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