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51. 发明授权

US09540736B2 Methods of etching films with reduced surface roughness 有权
标题翻译：蚀刻具有降低的表面粗糙度的膜的方法
公开(公告)号：US09540736B2
公开(公告)日：2017-01-10
申请号：US14793977
申请日：2015-07-08
申请人： Applied Materials, Inc.
发明人： Benjamin Schmiege , Nitin K. Ingle , Srinivas D. Nemani , Jeffrey W. Anthis , Xikun Wang , Jie Liu , David Benjaminson
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C25F3/00 , C23F1/12 , C30B33/12 , C23F4/00
CPC分类号： C23F1/12 , C23F4/00 , C30B33/12 , H01J37/32009 , H01J2237/334
摘要： Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.
摘要翻译：提供了用于蚀刻包含过渡金属的膜的方法，其有助于最小化在多晶材料的晶界处的较高蚀刻速率。某些方法涉及多晶材料的非晶化，其它方法涉及等离子体处理，而另一些方法涉及在蚀刻工艺中使用小剂量的卤化物转移剂。

52. 发明授权

US09534299B2 Method and system for ion beam delayering of a sample and control thereof 有权
标题翻译：样品离子束延迟的方法和系统及其控制
公开(公告)号：US09534299B2
公开(公告)日：2017-01-03
申请号：US13673055
申请日：2012-11-09
申请人： Semiconductor Insights Inc.
发明人： Robert K. Foster , Christopher Pawlowicz , Jason Abt , Ian Jones , Heinz Josef Nentwich
IPC分类号： C23C14/00 , C23C14/32 , C23F4/00 , G01N1/32 , H01L23/00
CPC分类号： C23F4/00 , G01N1/32 , H01J37/32935 , H01J37/32963 , H01L21/2633 , H01L22/26 , H01L23/00 , H01L2924/0002 , H01L2924/00
摘要： There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.
摘要翻译：提供了一种方法，系统和计算机程序产品，用于通过调整离子束研磨机的一个或多个操作参数来延迟离子束研磨机中的一层样品，该层包含一种或多种材料，并选择性地除去一种或多种材料以其各自的预定速率。还提供了一种用于从离子束研磨机中的样品中获得材料去除速率的方法和系统。

53. 发明申请

US20160250450A1 GUIDEWIRE WITH INTEGRAL RADIOPAQUE MARKERS 审中-公开
标题翻译： GUIDEWIRE与INTEGRAL RADIOPAQUE MARKERS
公开(公告)号：US20160250450A1
公开(公告)日：2016-09-01
申请号：US15149882
申请日：2016-05-09
申请人： Medtronic Vascular, Inc.
发明人： Mark Stiger , Richard Thomas
IPC分类号： A61M25/09 , A61L31/02 , A61L31/18 , C23F4/00 , A61L31/14
摘要： Embodiments hereof relate to a guidewire formed from an elongated shaft, at least a portion of the shaft having an outer layer, a plurality of channels formed through the outer layer, and an inner core. The outer layer is formed from a material non susceptible to erosion by an erosion agent and the inner core is formed from a radiopaque material susceptible to erosion by the erosion agent. When exposed to the erosion agent, core material adjacent to the channels is removed to form a pattern of integral radiopaque segments or markers with a plurality of voids therebetween. By controlling the location of channels and the rate of erosion of the core material, the pattern of integral radiopaque segments and voids allow for in situ measurement when viewed under fluoroscopy.
摘要翻译：本发明的实施方案涉及由细长轴形成的导丝，所述轴的至少一部分具有外层，穿过外层形成的多个通道和内芯。外层由不易受侵蚀剂侵蚀的材料形成，内芯由易受腐蚀剂腐蚀的不透射线材料形成。当暴露于侵蚀剂时，除去与通道相邻的芯材料以形成其间具有多个空隙的整体不透射线段或标记的图案。通过控制通道的位置和芯材的侵蚀速率，整体不透射线段和空隙的图案允许在荧光透视下观察时的原位测量。

54. 发明授权

US09324567B2 Gas cluster ion beam etching process for etching Si-containing, Ge-containing, and metal-containing materials 有权
标题翻译：用于蚀刻含Si，含锗和含金属材料的气体簇离子束蚀刻工艺
公开(公告)号：US09324567B2
公开(公告)日：2016-04-26
申请号：US13826600
申请日：2013-03-14
申请人： TEL Epion Inc.
发明人： Martin D. Tabat , Christopher K. Olsen , Yan Shao , Ruairidh MacCrimmon , Luis Fernandez
IPC分类号： H01L21/306 , H01L21/311 , H01L21/3213 , C23F4/00 , H01L21/3065
CPC分类号： H01L21/306 , C23F4/00 , H01L21/3065 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/32136 , H01L21/32137
摘要： A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.
摘要翻译：描述了用于执行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。此外，GCIB蚀刻处理利用含Si和/或Ge的蚀刻剂。此外，GCIB蚀刻处理有助于蚀刻含Si材料，含Ge材料和含金属材料。

55. 发明授权

US09284649B2 Method of patterning a stack 有权
标题翻译：堆叠图案的方法
公开(公告)号：US09284649B2
公开(公告)日：2016-03-15
申请号：US13173906
申请日：2011-06-30
申请人： Michael R. Feldbaum , Justin Jia-Jen Hwu , David S. Kuo , Gennady Gauzner , Kim Yang Lee , Li-Ping Wang
发明人： Michael R. Feldbaum , Justin Jia-Jen Hwu , David S. Kuo , Gennady Gauzner , Kim Yang Lee , Li-Ping Wang
IPC分类号： B32B9/00 , C23F4/00 , G03F7/00 , G11B5/855 , B82Y10/00 , B82Y40/00
CPC分类号： C23F4/00 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G11B5/855 , Y10T428/265
摘要： The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
摘要翻译：实施方案公开了一种制造叠层的方法，包括用氧化物层代替堆叠印记结构的金属层，使用化学蚀刻工艺对氧化物层堆叠进行图案化以将图案图像转移并将蚀刻残留物从堆叠印记结构清洗到基本上防止金属层的污染。

56. 发明申请

US20160032460A1 Methods Of Etching Films With Reduced Surface Roughness 有权
标题翻译：蚀刻表面粗糙度薄膜的方法
公开(公告)号：US20160032460A1
公开(公告)日：2016-02-04
申请号：US14793977
申请日：2015-07-08
申请人： Applied Materials, Inc.
发明人： Benjamin Schmiege , Nitin K. Ingle , Srinivas D. Nemani , Jeffrey W. Anthis , Xikun Wang , Jie Liu , David Benjaminson
IPC分类号： C23F1/12 , C23F4/00 , C30B33/12
CPC分类号： C23F1/12 , C23F4/00 , C30B33/12 , H01J37/32009 , H01J2237/334
摘要： Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.
摘要翻译：提供了用于蚀刻包含过渡金属的膜的方法，其有助于最小化在多晶材料的晶界处的较高蚀刻速率。某些方法涉及多晶材料的非晶化，其它方法涉及等离子体处理，而另一些方法涉及在蚀刻工艺中使用小剂量的卤化物转移剂。

57. 发明授权

US09238870B2 Plasma etch for chromium alloys 有权
标题翻译：铬合金等离子体蚀刻
公开(公告)号：US09238870B2
公开(公告)日：2016-01-19
申请号：US12577335
申请日：2009-10-12
申请人： Abbas Ali
发明人： Abbas Ali
IPC分类号： C23F4/00 , G03F1/80 , H01L21/3213 , H01L49/02
CPC分类号： C23F4/00 , G03F1/80 , H01L21/32136 , H01L21/32137 , H01L28/24
摘要： A reactive ion etching (RIE) process comprising a chlorine source gas and an oxygen source gas with an atomic ratio of chlorine to oxygen in the plasma of at least 6 to 1 is used to etch chromium alloy films such as SiCr, SiCrC, SiCrO, SiCrCO, SiCrCN, SiCrON, SiCrCON, CrO, CrN, CrON, and NiCr for example. Additionally, a fluorine source may be added to the etch chemistry.
摘要翻译：使用包含氯源气体和等离子体中氯与氧的原子比至少为6比1的氧源气体的反应离子蚀刻（RIE）工艺来蚀刻铬合金膜，例如SiCr，SiCrC，SiCrO， SiCrCO，SiCrCN，SiCrON，SiCrCON，CrO，CrN，CrON和NiCr。另外，可以向蚀刻化学品中加入氟源。

58. 发明申请

US20150371824A1 METHOD OF MULTIPLE ZONE SYMMETRIC GAS INJECTION FOR INDUCTIVELY COUPLED PLASMA 有权
标题翻译：用于感应耦合等离子体的多区域对称气体注入方法
公开(公告)号：US20150371824A1
公开(公告)日：2015-12-24
申请号：US14310969
申请日：2014-06-20
申请人： Applied Materials, Inc.
发明人： Steven LANE , Yang YANG , Kartik RAMASWAMY , Lawrence WONG
IPC分类号： H01J37/32 , C23F4/00 , C23C16/513
CPC分类号： H01J37/3211 , H01J37/32165 , H01J37/3244 , H01J2237/332 , H01J2237/334
摘要： Implementations described herein inject feedstock gases into multiple zones of an inductively coupled plasma processing reactor with minimal or no effect on process skew. In one embodiment, an integrated gas and coil assembly is provided that includes an upper surface and a lower surface, a first RF field applicator coil bounded at the upper surface and the lower surface, a second RF field applicator coil circumscribed by the first RF field applicator coil and bounded at the upper surface and the lower surface and an RF shield disposed between the first and second RF field generator wherein the RF shield extends from the lower surface and past the upper surface. The RF shield may have at least one gas channel disposed therethrough.
摘要翻译：本文所述的实施方案将原料气体注入到电感耦合等离子体处理反应器的多个区域中，对工艺偏差具有最小或没有影响。在一个实施例中，提供集成的气体和线圈组件，其包括上表面和下表面，在上表面和下表面界定的第一RF场施加器线圈，由第一RF场限定的第二RF场施加器线圈施加器线圈并且在上表面和下表面处限定，并且RF屏蔽设置在第一和第二RF场发生器之间，其中RF屏蔽件从下表面延伸并且经过上表面。 RF屏蔽件可以具有穿过其中布置的至少一个气体通道。

59. 发明授权

US09155209B2 Flex-rigid printed wiring board and manufacturing method thereof 有权
标题翻译：柔性刚性印刷线路板及其制造方法
公开(公告)号：US09155209B2
公开(公告)日：2015-10-06
申请号：US13459628
申请日：2012-04-30
申请人： Akihiro Sato , Masahiro Sasaki , Tadahiro Ohmi , Akihiro Morimoto
发明人： Akihiro Sato , Masahiro Sasaki , Tadahiro Ohmi , Akihiro Morimoto
IPC分类号： H05K3/06 , H05K3/46 , C23F1/02 , C23F1/18 , C23F4/04 , C23F4/00 , H05K3/24
CPC分类号： H05K3/4691 , C23F1/02 , C23F1/18 , C23F4/00 , C23F4/04 , H05K3/064 , H05K3/243 , H05K3/4652 , H05K2201/09736 , H05K2203/0369 , Y10T29/49117 , Y10T29/49155 , Y10T29/49165 , Y10T156/10
摘要： A flex-rigid printed wiring board is provided which can retain flexibility of a flexible portion while increasing durability of the flexible portion against folding, and can ensure conduction in a rigid portion, and a method of manufacturing the printed wiring board. The flex-rigid printed wiring board includes a conductor layer provided on at least one face of a base film, one region of the wiring board containing the base film being a rigid region, an another region containing the base film being a flexible region. The average thickness “tf” of the conductor layer on the base film formed in the flexible region and the average thickness “tR” of the conductor layer on the base film formed in the rigid region satisfy the relationship of tf
摘要翻译：提供柔性刚性印刷线路板，其可以保持柔性部分的柔性，同时增加柔性部分的折叠的耐久性，并且可以确保刚性部分中的导电性，以及制造印刷线路板的方法。柔性刚性印刷电路板包括设置在基膜的至少一个面上的导体层，所述布线基板的一个区域包含基膜为刚性区域，另一区域包含基膜为柔性区域。形成在柔性区域的基底膜上的导体层的平均厚度“tf”和形成在刚性区域中的基底膜上的导体层的平均厚度“tR”满足tf

60. 发明授权

US09153453B2 Technique for etching monolayer and multilayer materials 有权
标题翻译：蚀刻单层和多层材料的技术
公开(公告)号：US09153453B2
公开(公告)日：2015-10-06
申请号：US13371124
申请日：2012-02-10
申请人： Nathalie C. D. Bouet , Raymond P. Conley , Ralu Divan , Albert Macrander
发明人： Nathalie C. D. Bouet , Raymond P. Conley , Ralu Divan , Albert Macrander
IPC分类号： H01L23/58 , H01L21/3065 , G21K1/06 , H01L21/3213 , C23F4/00 , B82Y10/00
CPC分类号： H01L21/3065 , B82Y10/00 , C23F4/00 , G21K1/062 , G21K2201/067 , H01L21/32137
摘要： A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF3, Cl2, and O2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.
摘要翻译：公开了通过使用具有氟基化学的RIE技术通过蚀刻单层和多层进行切片的方法。在一个实施方案中，该方法单独使用反应离子蚀刻（RIE）或与使用氟基化学的电感耦合等离子体（ICP）组合使用，并且使用足够的功率提供高离子能量以增加蚀刻速率并获得更深的各向异性蚀刻。在第二实施例中，提供了使用RIE与ICP结合使用氟基和氯基化学物质并使用RF功率和ICP功率的WSI2 / Si多层的切片的方法。根据第二实施例，通过三种气体的比例实现高水平的垂直各向异性; 即CHF3，Cl2和O2与RF和ICP。另外，结合第二实施例，可以在有助于各向异性轮廓生成的多层的表面上形成钝化层。

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