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    • 51. 发明申请
    • HEAT INSULATING TRANSMISSION LINE, VACUUM INSULATING CHAMBER, WIRELESS COMMUNICATION SYSTEM
    • 绝热传输线,真空绝缘室,无线通信系统
    • US20130265122A1
    • 2013-10-10
    • US13911299
    • 2013-06-06
    • Kabushiki Kaisha Toshiba
    • Tamio KAWAGUCHIHiroyuki KayanoNoritsugu ShiokawaKohei Nakayama
    • H01P5/00
    • H01P5/024H01P1/042H01P1/08H01P1/30H01P3/12H01P5/00
    • A heat insulating transmission line includes a first waveguide with a first aperture end, a second waveguide with a second aperture end, and a reflector. The second waveguide is arranged coaxially with the first waveguide. The second aperture end faces the first aperture end through an air gap. The reflector is provided outside the air gap, and controls radiation power from the air gap. In addition, the reflector is substantially parallel to a portion of a virtual plane connecting an inner wall of the first aperture end of the first waveguide and an inner wall of the second aperture end of the second waveguide. When a mean frequency of a signal transmitting through the heat insulating transmission line is expressed as λ, a distance between the virtual surface and the reflector is not less than N×λ/2−0.05λ and not more than N×λ/2+0.2λ (N is a positive integer).
    • 绝热传输线包括具有第一开口端的第一波导,具有第二孔端的第二波导和反射器。 第二波导与第一波导同轴配置。 第二孔径端通过气隙面向第一孔径端。 反射器设置在气隙外部,并控制来自气隙的辐射功率。 此外,反射器基本上平行于连接第一波导的第一孔径的内壁和第二波导的第二孔端的内壁的虚拟平面的一部分。 当通过绝热传输线传输的信号的平均频率表示为λ时,虚拟表面和反射器之间的距离不小于N×λ/2-0.05λ且不大于N×λ/ 2 + 0.2λ(N是正整数)。
    • 55. 发明授权
    • R.F. Sputtering apparatus including multi-network power supply
    • R.F. 溅射装置包括多网络电源
    • US4284490A
    • 1981-08-18
    • US66917
    • 1979-08-21
    • Harold J. Weber
    • Harold J. Weber
    • H01J37/34H01P5/00H03H7/38C23C15/00
    • H01J37/32174H01J37/3277H01J37/34H01J37/3408H01J37/3444H01P5/00H03H7/383
    • Apparatus for radio frequency sputtering in the megahertz range, primarily higher than about six megahertz, in which the target and anode electrodes are at a low input impedance reactively such that the transfer of power to the target for practical sputtering is normally difficult. The useful plasma which provides the sputtering action has an effective high impedance which obtains between the electrodes during the sputtering process, this high impedance being shunted by a capacitive reactance made up of parasitic paths and similar capacitive components.A string of at least three resonant networks is arranged between the high frequency r.f. source and the sputtering electrodes and these networks transform impedance and voltage from one end of the string at the source to different values and conditions at the other end of the string where they are tied to the electrodes in order to achieve a maximum of overall power transfer efficiency.The invention provides for tuning of the networks, matching of the impedances and variations of circuitry to achieve the desired ends for different types of sputtering target configurations.
    • 用于射频溅射的装置,其主要高于约6兆赫兹,其中目标和阳极电极处于低输入阻抗,反应性地使得对于实际溅射的电力传递通常是困难的。 提供溅射作用的有用等离子体具有在溅射过程期间在电极之间获得的有效的高阻抗,该高阻抗由由寄生路径和类似的电容性部件组成的电容性电抗分流。 至少有三个谐振网络串被布置在高频率r.f之间。 源极和溅射电极,并且这些网络将来自源极的串的一端的阻抗和电压从弦线的另一端转换到不同的值和条件,其中它们被连接到电极,以便实现最大的整体功率传递 效率。 本发明提供了网络的调谐,阻抗的匹配和电路的变化以实现不同类型的溅射靶构造的期望的端点。