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51. 发明授权

US07635655B2 Method for replacing a nitrous oxide based oxidation process with a nitric oxide based oxidation process for substrate processing 失效
标题翻译：用氧化亚氮氧化法替代一氧化二氮的氧化工艺用于衬底加工的方法
公开(公告)号：US07635655B2
公开(公告)日：2009-12-22
申请号：US11278054
申请日：2006-03-30
申请人： Anthony Dip
发明人： Anthony Dip
IPC分类号： H01L21/31
CPC分类号： H01L21/3143 , H01L21/0223 , H01L21/02233 , H01L21/02249 , H01L21/02255 , H01L21/28202 , H01L21/3144 , H01L21/31658 , H01L21/31662
摘要： A method for performing an oxidation process on a plurality of substrates in a batch processing system. According to one embodiment, the method includes selecting a N2O-based oxidation process for the substrates including a first process gas containing N2O that thermally decomposes in a process chamber of the batch processing system to N2, O2, and NO byproducts, and generating a replacement NO-based oxidation process for the substrates including a second process gas containing N2, O2, and NO with molar concentrations that mimic that of the N2, O2, and NO byproducts in the N2O-based oxidation process. According to another embodiment of the invention, the NO-based oxidation process contains NO, O2, and an inert gas.
摘要翻译：一种在批处理系统中对多个基板进行氧化处理的方法。根据一个实施方案，该方法包括选择用于基材的基于N2O的氧化方法，其包括含有在分批处理系统的处理室中热分解为N 2，O 2和NO副产物的N 2 O的第一工艺气体，用于底物的基于NO的氧化方法，包括含有N 2，O 2和NO的第二工艺气体，其摩尔浓度模拟N 2 O基氧化过程中的N 2，O 2和NO副产物的摩尔浓度。根据本发明的另一个实施方案，NO基氧化法含有NO，O 2和惰性气体。

52. 发明授权

US07615461B2 Method for forming shallow trench isolation of semiconductor device 失效
标题翻译：半导体器件浅沟槽隔离的形成方法
公开(公告)号：US07615461B2
公开(公告)日：2009-11-10
申请号：US11944748
申请日：2007-11-26
申请人： Seung Bum Kim , Jong Kuk Kim
发明人： Seung Bum Kim , Jong Kuk Kim
IPC分类号： H01L21/30
CPC分类号： H01L21/76224 , H01L21/02233 , H01L21/02252 , H01L21/3065 , H01L21/31654
摘要： A method for forming a shallow trench isolation (STI) of a semiconductor device comprises forming a nitride film pattern over a semiconductor substrate having a defined lower structure, etching a predetermined thickness of the semiconductor substrate using the nitride film pattern as a mask to form a trench having a vertical sidewall in a portion of the substrate predetermined to be a device isolation region, performing a plasma treatment process on the sidewall of the trench to form a plasma oxide film, forming an oxide film over the resulting structure to fill the trench, and performing a planarization process over the resulting structure.
摘要翻译：用于形成半导体器件的浅沟槽隔离（STI）的方法包括在具有限定的下部结构的半导体衬底上形成氮化物膜图案，使用氮化物膜图案作为掩模蚀刻半导体衬底的预定厚度以形成沟槽，其在预定为器件隔离区的衬底的一部分中具有垂直侧壁，对沟槽的侧壁进行等离子体处理处理以形成等离子体氧化物膜，在所得结构上形成氧化膜以填充沟槽，并对结果进行平坦化处理。

53. 发明申请

US20090042379A1 Method for Fabricating Semiconductor Device Capable of Adjusting the Thickness of Gate Oxide Layer 有权
标题翻译：制造能够调节栅氧化层厚度的半导体器件的方法
公开(公告)号：US20090042379A1
公开(公告)日：2009-02-12
申请号：US12187370
申请日：2008-08-06
申请人： Tai Chiang Chen , Xin Wang
发明人： Tai Chiang Chen , Xin Wang
IPC分类号： H01L21/3205 , H01L21/469
CPC分类号： H01L21/31662 , H01L21/02233 , H01L21/28035 , H01L21/28167 , H01L21/31658 , H01L29/51 , Y10S438/981
摘要： The present invention provides a method for fabricating semiconductor device, which is capable of adjusting a gate oxide layer thickness, including: providing a semiconductor substrate; growing a first oxide layer on a surface of the semiconductor substrate; patterning the first oxide layer to expose the first oxide layer corresponding to a gate to be formed; removing the exposed first oxide layer; immersing the substrate into deionized water to grow a second oxide layer; forming a polysilicon layer on the surfaces of the first oxide layer and the second oxide layer; and etching the polysilicon layer to form a gate. The method for fabricating semiconductor device according to the present invention, which is capable of adjusting the thickness of gate oxide layer, can control the thickness of gate oxide layer precisely to satisfy the requirement for different threshold voltages.
摘要翻译：本发明提供一种能够调整栅极氧化层厚度的半导体器件的制造方法，包括：提供半导体衬底; 在半导体衬底的表面上生长第一氧化物层; 图案化第一氧化物层以暴露与要形成的栅极对应的第一氧化物层; 去除暴露的第一氧化物层; 将基底浸入去离子水中以生长第二氧化物层; 在所述第一氧化物层和所述第二氧化物层的表面上形成多晶硅层; 并蚀刻多晶硅层以形成栅极。根据本发明的半导体器件的制造方法，其能够调整栅氧化层的厚度，能够精确地控制栅氧化层的厚度，以满足不同阈值电压的要求。

54. 发明申请

US20080164560A1 Planar Oxidation Method for Producing a Localised Buried Insulator 有权
标题翻译：用于生产局部埋藏绝缘子的平面氧化方法
公开(公告)号：US20080164560A1
公开(公告)日：2008-07-10
申请号：US11883706
申请日：2006-02-02
申请人： Guilhem Almuneau , Antonio Munoz-Yague , Thierry Camps , Chantal Fontaine , Veronique Bardinal-Delagnes
发明人： Guilhem Almuneau , Antonio Munoz-Yague , Thierry Camps , Chantal Fontaine , Veronique Bardinal-Delagnes
IPC分类号： H01L29/00 , H01L21/76
CPC分类号： H01L21/02255 , H01L21/02178 , H01L21/02233 , H01L21/31662 , H01L21/31666
摘要： The invention relates to a method of producing a semiconductor device, comprising the following steps consisting in: forming first, second and third semiconductor layers (1, 2, 3), whereby the first and second layers (1, 3) contain a smaller concentration of oxidisable species than the second layer (2); forming a mask (4) on the third layer (3); and oxidising the second layer (2) with the diffusion of oxidising species through the third layer (3).
摘要翻译：本发明涉及一种制造半导体器件的方法，包括以下步骤：形成第一，第二和第三半导体层（1,2,3），由此第一和第二层（1,3）含有较小的浓度的可氧化物质比第二层（2）; 在所述第三层（3）上形成掩模（4）; 以及氧化物质通过第三层（3）的扩散来氧化第二层（2）。

55. 发明申请

US20070134415A1 Oxidation Treatment Apparatus and Method 审中-公开
标题翻译：氧化处理装置及方法
公开(公告)号：US20070134415A1
公开(公告)日：2007-06-14
申请号：US11563980
申请日：2006-11-28
申请人： Ki-Hyun Hwang , U-In Chung , Yu-Gyun Shin , Jae-Young Ahn , Jin-Gyun Kim
发明人： Ki-Hyun Hwang , U-In Chung , Yu-Gyun Shin , Jae-Young Ahn , Jin-Gyun Kim
IPC分类号： C23C16/00 , B05D3/04 , B05D7/00 , B05D1/02
CPC分类号： H01L21/02233 , H01L21/31654
摘要： An oxidation treatment apparatus for oxidizing a surface of a substrate includes a process chamber for performing a process, a boat supporting the substrate and disposed in the process chamber during the process and a first ozone supply unit supplying ozone to the process chamber. The first ozone supply unit includes an ozone generator disposed at an exterior of the process chamber and an ozone spray nozzle disposed in the process chamber to spray the ozone supplied from the ozone generator into the process chamber.
摘要翻译：用于氧化基板表面的氧化处理装置包括处理过程的处理室，支撑基板的船，并且在处理过程中设置在处理室中，以及向处理室供应臭氧的第一臭氧供给单元。第一臭氧供应单元包括设置在处理室外部的臭氧发生器和设置在处理室中的臭氧喷嘴，以将从臭氧发生器供应的臭氧喷射到处理室中。

56. 发明授权

US07208380B2 Interface improvement by stress application during oxide growth through use of backside films 有权
标题翻译：通过使用背面薄膜在氧化物生长期间的应力应用的界面改善
公开(公告)号：US07208380B2
公开(公告)日：2007-04-24
申请号：US11083912
申请日：2005-03-18
申请人： Anand T. Krishnan , Srinivasan Chakravarthi , Haowen Bu
发明人： Anand T. Krishnan , Srinivasan Chakravarthi , Haowen Bu
IPC分类号： H01L21/336
CPC分类号： H01L29/7842 , H01L21/0217 , H01L21/02211 , H01L21/02233 , H01L21/02255 , H01L21/02274 , H01L21/28211 , H01L21/31662 , H01L21/3185 , H01L21/823462 , H01L21/823857 , H01L29/7833
摘要： The present invention provides, in one aspect, a method of fabricating a gate oxide layer on a microelectronics substrate. This embodiment comprises forming a stress inducing pattern on a backside of a microelectronics wafer and growing a gate oxide layer on a front side of the microelectronics wafer in the presence of a tensile stress caused by the stress inducing pattern.
摘要翻译：本发明在一个方面提供了一种在微电子衬底上制造栅氧化层的方法。该实施例包括在微电子晶片的背面上形成应力诱导图案，并且在由应力诱导图案引起的拉伸应力的存在下，在微电子晶片的正面上生长栅极氧化物层。

57. 发明授权

US07001851B2 Steam oxidation method 失效
标题翻译：蒸汽氧化法
公开(公告)号：US07001851B2
公开(公告)日：2006-02-21
申请号：US10871900
申请日：2004-06-18
申请人： Yoshiyuki Tanaka , Hironobu Narui , Yoshinori Yamauchi , Yuichi Kuromizu , Yoshiaki Watanabe
发明人： Yoshiyuki Tanaka , Hironobu Narui , Yoshinori Yamauchi , Yuichi Kuromizu , Yoshiaki Watanabe
IPC分类号： H01I21/31 , H01L21/469
CPC分类号： H01L21/02178 , C23C8/02 , C23C8/16 , H01L21/02233 , H01L21/02255 , H01L21/31666
摘要： This invention provides a steam oxidation method of a matter to be oxidized with proper controllability and reproducibility. It is provided a steam oxidation method, where a semiconductor substrate (a matter to be oxidized) is housed in a steam oxidation reactor and is subjected to: a first step of supplying N2 gas to the reactor housing the semiconductor substrate and substituting the inside of the reactor with N2 gas; a second step of stopping supply of the N2 gas and supplying a steam-accompanied N2 gas, in which the N2 gas is accompanied with steam, to the reactor; a third step of increasing a temperature of the semiconductor substrate to 450° C. (a steam oxidation temperature) while supplying the steam-accompanied N2 gas; and a fourth step of holding the semiconductor substrate for a predetermined time at 450° C.
摘要翻译：本发明提供了一种具有适当可控性和再现性的待氧化物质的蒸汽氧化方法。提供一种蒸汽氧化法，其中将半导体衬底（待氧化的物质）容纳在蒸汽氧化反应器中，并经受：向反应器壳体供应N 2气体的第一步骤半导体衬底并用N 2气体代替反应器内部; 第二步骤是停止供应N 2气体并供应伴随着N 2气体的蒸气伴随的N 2气体，其中伴随着N 2气体用蒸汽，到反应器; 在提供伴随蒸汽的N 2气体的同时，将半导体衬底的温度升高至450℃（蒸汽氧化温度）的第三步骤; 以及在450℃下将半导体衬底保持预定时间的第四步骤。

58. 发明申请

US20050059259A1 Interfacial oxidation process for high-k gate dielectric process integration 有权
标题翻译：用于高k栅介质工艺集成的界面氧化工艺
公开(公告)号：US20050059259A1
公开(公告)日：2005-03-17
申请号：US10662875
申请日：2003-09-16
申请人： David O'Meara , Cory Wajda , Tsuyoshi Takahashi , Alessandro Callegari , Kristen Scheer , Sufi Zafar , Paul Jamison
发明人： David O'Meara , Cory Wajda , Tsuyoshi Takahashi , Alessandro Callegari , Kristen Scheer , Sufi Zafar , Paul Jamison
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/31 , H01L21/469
CPC分类号： H01L21/28185 , H01L21/02181 , H01L21/02233 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/02304 , H01L21/28194 , H01L21/28202 , H01L21/3143 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31658 , H01L21/31662 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a high-k layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.
摘要翻译：提供了一种用于通过使用扩散过滤层来形成具有界面氧化物层的微观结构以控制与形成高k层的微结构相关联的衬底的氧化性能的方法。扩散过滤层控制表面的氧化。可以在氧化过程中形成界面氧化物层，该氧化过程在沉积高k层到扩散过滤层上之后或在沉积高k层到扩散过滤层上之后进行。

59. 发明申请

US20040266214A1 Annealing furnace, manufacturing apparatus, annealing method and manufacturing method of electronic device 失效
标题翻译：退火炉，制造装置，退火方法和电子装置的制造方法
公开(公告)号：US20040266214A1
公开(公告)日：2004-12-30
申请号：US10661564
申请日：2003-09-15
发明人： Kyoichi Suguro , Takayuki Ito , Takaharu Itani
IPC分类号： H01L021/31 , H01L021/44 , H01L021/469
CPC分类号： H01L21/28185 , H01L21/02046 , H01L21/02233 , H01L21/02247 , H01L21/28202 , H01L21/28211 , H01L21/28238 , H01L21/3144 , H01L21/32 , H01L21/67115 , H01L21/67155 , H01L21/823462 , H01L29/513 , H01L29/518
摘要： An annealing furnace, includes a processing chamber configured to store a substrate; a susceptor located in the processing chamber so as to load the substrate and having an auxiliary heater for heating the substrate at 650null C. or less, the susceptor having a surface being made of quartz; a gas supply system configured to supply a gas required for a thermal processing on the substrate in parallel to a surface of the substrate; a transparent window located on an upper part of the processing chamber facing the susceptor; and a main heater configured to irradiate a pulsed light on the surface of the substrate to heat the substrate from the transparent window, the pulsed light having a pulse duration of approximately 0.1 ms to 200 ms and having a plurality of emission wavelengths.
摘要翻译：一种退火炉，包括：配置成存储基板的处理室; 位于所述处理室中的基座，以便加载所述基板并具有用于在650℃以下加热所述基板的辅助加热器，所述基座具有由石英制成的表面; 气体供给系统，被配置为平行于所述基板的表面在所述基板上供给热处理所需的气体; 位于处理室的与感受器相对的上部的透明窗口; 以及主加热器，其被配置为在所述基板的表面上照射脉冲光以从所述透明窗加热所述基板，所述脉冲光具有约0.1ms至200ms的脉冲持续时间并且具有多个发射波长。

60. 发明申请

US20040082198A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20040082198A1
公开(公告)日：2004-04-29
申请号：US10659748
申请日：2003-09-11
发明人： Manabu Nakamura , Hiroyuki Nansei , Kentaro Sera , Masahiko Higashi , Yukihiro Utsuno , Hideo Takagi , Tatsuya Kajita
IPC分类号： H01L021/31
CPC分类号： H01L21/02233 , H01J37/32192 , H01L21/02247 , H01L21/02252 , H01L21/3144 , H01L21/31654 , H01L21/823857 , H01L21/823892 , H01L27/105 , H01L27/1052 , H01L27/115 , H01L27/11568 , H01L27/11573
摘要： A chemical oxide film formed on a semiconductor substrate is formed by wet cleaning using a strongly acidic solution so that the adhesion of impurities to the chemical oxide film can be reduced between a wet cleaning process and an insulation film forming process. This makes it possible to prevent insulation degradation of a gate insulation film when the gate insulation film embracing the chemical oxide film is formed in the insulation film forming process in which low-temperature processing is conducted.
摘要翻译：通过使用强酸性溶液的湿式清洗形成在半导体衬底上形成的化学氧化物膜，使得在湿式清洗工艺和绝缘膜形成工艺之间可以减少杂质与化学氧化物膜的粘附。这使得当在进行低温处理的绝缘膜形成工艺中形成包含化学氧化物膜的栅极绝缘膜时，可以防止栅极绝缘膜的绝缘劣化。

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