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    • 54. 发明授权
    • System and method for ion implantation with improved productivity and uniformity
    • 用于离子注入的系统和方法,提高生产率和均匀性
    • US08278634B2
    • 2012-10-02
    • US12796215
    • 2010-06-08
    • Bo H. VanderbergSteven C. HaysAndy Ray
    • Bo H. VanderbergSteven C. HaysAndy Ray
    • H01J37/317
    • H01J37/317H01J37/147H01J37/244H01J37/3171H01J49/30H01J2237/006H01J2237/182H01J2237/24542
    • A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current.
    • 本文提供了将注入的气体(例如,氩,氙)引入到包括磁扫描器的束线区域中的方法。 注入的气体通过增强(例如,增加,减少)磁离子束的电荷中和(例如,扫描磁场不为零的区域处的离子束)来改善束流,从而减少由于零场导致的电流损耗 效果(ZFE)。 通过减小具有磁场的区域中的电流损耗,磁束电流增加(例如,在磁场不为零的区域中,束电流增加)在整个扫描中以均匀的方式提高整个束电流 路径,从而减少ZFE的影响。 换句话说,ZFE通过磁化束电流的增加有效地最小化而被去除。
    • 56. 发明申请
    • SYSTEM, METHOD AND APPARATUS FOR PLASMA ETCH HAVING INDEPENDENT CONTROL OF ION GENERATION AND DISSOCIATION OF PROCESS GAS
    • 具有离子发生和过程气体分离独立控制的等离子体蚀刻的系统,方法和装置
    • US20110212624A1
    • 2011-09-01
    • US12713523
    • 2010-02-26
    • Eric A. Hudson
    • Eric A. Hudson
    • H01L21/3065C23F1/08
    • H01L21/3065H01J37/32532H01J37/32541H01J37/32596H01J2237/182H01L21/31116H05H1/24
    • A method of etching a semiconductor wafer including injecting a source gas mixture into a process chamber including injecting the source gas mixture into a multiple hollow cathode cavities in a top electrode of the process chamber and generating a plasma in each one of the hollow cathode cavities. Generating the plasma in the hollow cathode cavities includes applying a first biasing signal to the hollow cathode cavities. The generated plasma or activated species is output from corresponding outlets of each of the hollow cathode cavities into a wafer processing region in the process chamber. The wafer processing region is located between the outlets of the hollow cathode cavities and a surface to be etched. An etchant gas mixture is injected into the wafer processing region. A plasma can also be supported and/or generated in the wafer processing region. The etchant gas mixture is injected through multiple injection ports in the top electrode such that the etchant gas mixture mixes with the plasma output from the outlets of the hollow cathode cavities. The etchant gas mixture is substantially prevented from flowing into the outlets of the hollow cathode cavities by the plasma flowing from the outlets of hollow cathode cavities. Mixing the etchant gas mixture and the output from the hollow cathode cavities generates a desired chemical species in the wafer processing region and the surface to be etched can be etched. A system for generating an etching species is also describer herein.
    • 一种蚀刻半导体晶片的方法,包括将源气体混合物注入到处理室中,包括将源气体混合物注入到处理室的顶部电极中的多个空心阴极腔中,并在每个空心阴极腔中产生等离子体。 在中空阴极腔中产生等离子体包括将第一偏置信号施加到中空阴极腔。 产生的等离子体或活化物质从每个空心阴极腔的相应出口输出到处理室中的晶片处理区域。 晶片处理区域位于中空阴极腔的出口和待蚀刻的表面之间。 将蚀刻气体混合物注入晶片处理区域。 等离子体也可以在晶片处理区域中被支持和/或产生。 蚀刻剂气体混合物通过顶部电极中的多个注入口注入,使得蚀刻剂气体混合物与来自空心阴极腔的出口的等离子体输出混合。 通过等离子体从空心阴极腔的出口流出,基本上防止了蚀刻剂气体混合物流入空心阴极腔的出口。 将蚀刻剂气体混合物和来自空心阴极腔的输出混合在晶片加工区域中产生所需的化学物质,并且可以蚀刻待蚀刻的表面。 本文还描述了用于产生蚀刻物质的系统。
    • 57. 发明申请
    • VACUUM PROCESSING CHAMBERS INCORPORATING A MOVEABLE FLOW EQUALIZER
    • 真空加工罐配有可移动流量均衡器
    • US20110031214A1
    • 2011-02-10
    • US12537179
    • 2009-08-06
    • Jisoo KimThorsten B. Lill
    • Jisoo KimThorsten B. Lill
    • C23F1/00C23F1/08
    • H01L21/68785C23C16/4412H01J37/185H01J37/3244H01J37/32449H01J2237/182H01J2237/2001H01L21/6719
    • A method and apparatus for vacuum processing of a workpiece, the apparatus including a flow equalizer disposed in a vacuum processing chamber between a workpiece support pedestal and a pump port located in a wall of the vacuum processing chamber. In an embodiment, the flow equalizer has a first annular surface concentric about the workpiece support pedestal to provide conductance symmetry about the workpiece support even when the pump port is asymmetrically positioned within the vacuum processing chamber. In an embodiment, the flow equalizer has a second annular surface facing a lower surface of the workpiece support pedestal to restrict conductance as the flow equalizer is moved is response to a chamber pressure control signal. In an embodiment, the apparatus for vacuum processing of a workpiece includes tandem vacuum processing chambers sharing a vacuum pump with each tandem chamber including a flow equalizer to reduce cross-talk between the tandem chambers.
    • 一种用于真空处理工件的方法和装置,该装置包括设置在工件支撑基座和位于真空处理室的壁中的泵口之间的真空处理室中的流量均衡器。 在一个实施例中,流量均衡器具有围绕工件支撑基座同心的第一环形表面,以便即使当泵口不对称地位于真空处理室内时也能够提供关于工件支撑件的电导对称性。 在一个实施例中,流量均衡器具有面向工件支撑基座的下表面的第二环形表面,以在流量均衡器移动时限制电导响应于腔室压力控制信号。 在一个实施例中,用于真空处理工件的装置包括串联真空处理室,其共享真空泵,每个串联室包括流量均衡器以减少串联室之间的串扰。
    • 59. 发明申请
    • Vapor-Barrier Vacuum Isolation System
    • 气体隔离真空隔离系统
    • US20100122901A1
    • 2010-05-20
    • US12470689
    • 2009-05-22
    • Leonard M. WeinsteinKaren M. Taminger
    • Leonard M. WeinsteinKaren M. Taminger
    • C23C14/34
    • H01J37/16H01J37/18H01J2237/002H01J2237/006H01J2237/182H01J2237/188H01J2237/2002
    • A system includes a collimated beam source within a vacuum chamber, a condensable barrier gas, cooling material, a pump, and isolation chambers cooled by the cooling material to condense the barrier gas. Pressure levels of each isolation chamber are substantially greater than in the vacuum chamber. Coaxially-aligned orifices connect a working chamber, the isolation chambers, and the vacuum chamber. The pump evacuates uncondensed barrier gas. The barrier gas blocks entry of atmospheric vapor from the working chamber into the isolation chambers, and undergoes supersonic flow expansion upon entering each isolation chamber. A method includes connecting the isolation chambers to the vacuum chamber, directing vapor to a boundary with the working chamber, and supersonically expanding the vapor as it enters the isolation chambers via the orifices. The vapor condenses in each isolation chamber using the cooling material, and uncondensed vapor is pumped out of the isolation chambers via the pump.
    • 系统包括在真空室内的准直光束源,可冷凝阻挡气体,冷却材料,泵以及由冷却材料冷却以隔离阻挡气体的隔离室。 每个隔离室的压力水平基本上大于真空室中的压力水平。 同轴对齐的孔连接工作室,隔离室和真空室。 泵排出未凝结的阻挡气体。 阻挡气体阻止大气蒸气从工作室进入隔离室,并且在进入每个隔离室时经历超音速流动膨胀。 一种方法包括将隔离室连接到真空室,将蒸汽引导到与工作室的边界,以及当蒸气通过孔口进入隔离室时使其蒸气膨胀。 蒸汽在每个隔离室中使用冷却材料冷凝,未冷凝的蒸汽通过泵从隔离室泵出。