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    • 53. 发明授权
    • Magnetic recording medium
    • 磁记录介质
    • US06468628B2
    • 2002-10-22
    • US09759332
    • 2001-01-16
    • Masanori SueokaAkimitsu TsukudaNobuaki Ito
    • Masanori SueokaAkimitsu TsukudaNobuaki Ito
    • G11B5733
    • G11B5/7315G11B5/64G11B5/70G11B5/7325G11B5/733G11B5/735Y10T428/24355Y10T428/24975Y10T428/31725
    • Disclosed is a magnetic recording medium having a magnetic layer directly formed on at least one surface of a base film that comprises, as the essential ingredient, an aromatic polyamide, in which the number of protrusions having a height of at least 10 nm on the surface of the magnetic layer, Na(10) (/mm2), the number of protrusions having a height of at least 50 nm thereon, Na(50) (/mm2), and the number of protrusions having a height of at least 10 nm on the surface of the base film coated with the magnetic layer, Na(10)′ (/mm2), all satisfy the following formulae: 2×104≦Na(10)≦2×107, 0≦Na(50)≦5×104, −0.9≦(Na(10)−Na(10)′)/Na(10)′≦0. The medium has, as the non-magnetic substrate (base film), a highly-tough, aromatic polyamide film, and the surface profile of its magnetic layer and that of its base film are specifically controlled.
    • 公开了一种磁记录介质,其具有直接形成在基膜的至少一个表面上的磁性层,所述磁性层包含作为必要成分的芳族聚酰胺,其中表面上具有至少10nm的高度的突起的数量 的磁性层的Na(10)(/ mm 2),其上具有至少50nm的高度的突起的数量为Na(50)(/ mm 2),并且具有至少10nm的高度的突起的数量 在涂覆有磁性层的基膜的表面上,Na(10)'(/ mm2)都满足下列公式:介质作为非磁性基材(基膜)具有高韧性,芳香性 聚酰胺薄膜及其磁性层的表面轮廓及其底膜的表面轮廓是特别受控制的。
    • 57. 发明授权
    • Method and apparatus for storing data using spin-polarized electrons
    • 使用自旋极化电子存储数据的方法和装置
    • US06304481B1
    • 2001-10-16
    • US09612221
    • 2000-07-07
    • Thomas D. Hurt
    • Thomas D. Hurt
    • G11C1300
    • G11B23/281G11B5/00G11B5/64G11B5/65G11B5/653G11B5/656G11B9/10G11B11/11G11B11/115G11B13/045G11B19/04G11B20/1883G11C11/02G11C11/23H01J3/02H01J2203/0296
    • A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, the electron having a wavelength “characteristic” of unpaired electrons in the data storage layer which cause the magnetic moment of the material, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at a second wavelength at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.
    • 一种数据存储装置,包括基板,基板上的数据存储层和自旋极化电子源。 数据存储层包括固定数量的磁性材料的原子层,为数据存储层提供垂直于数据存储层表面的磁各向异性。 在数据存储层中创建数据磁场。 数据磁场在对应于第一数据值的第一方向或对应于第二数据值的第二方向上被极化。 通过提供具有电子磁场的自旋极化电子,数据存储在数据存储层中,该电子磁场具有与第一和第二数据值中的一个数据值相对应的极化方向,电子具有不成对电子的波长“特性” 数据存储层,其引起材料的磁矩,并将自旋极化电子引导到数据磁场,以将电子磁场的极化方向赋予数据磁场。 通过在数据磁场处引导第二波长的自旋极化电子并通过数据磁场检测自旋极化电子的偏转或吸引,从数据存储层读取数据。 或者,通过将自旋极化电子指向数据磁场,从数据存储层读取数据,使得磁介质产生二次电子,然后检测二次电子的某些特性。
    • 60. 发明授权
    • High density magnetic recording medium utilizing selective growth of
ferromagnetic material
    • 利用铁磁材料的选择性生长的高密度磁记录介质
    • US6146755A
    • 2000-11-14
    • US172657
    • 1998-10-15
    • Supratik GuhaArunava Gupta
    • Supratik GuhaArunava Gupta
    • G11B5/62G11B5/64G11B5/73G11B5/84G11B5/85G11B5/855G11B5/66
    • G11B5/732G11B5/62G11B5/64G11B5/65G11B5/7325G11B5/8404G11B5/85G11B5/855Y10S428/90Y10T428/26Y10T428/265
    • A storage device and a method of forming a storage device, includes depositing a metal layer on a substrate, and oxidizing the metal layer to form an oxide with a rutile structure on which a ferromagnetic material is selectively grown. The substrate may be substantially formed of either SiO.sub.2, Si.sub.3 N.sub.4, or a compound of SiO.sub.2 and Si.sub.3 N.sub.4. In another method, a method of forming a magnetic device, includes one of seeding a surface with one of Ti, Sn, and Ru islands having nanometer dimensions, and by exposing nanometer scale areas of the one of Ti, Sn, and Ru on a substrate, and coating the one of Ti, Sn, and Ru, with a ferromagnetic material. The surface may be substantially formed of either SiO.sub.2, Si.sub.3 N.sub.4, or a compound of SiO.sub.2 and Si.sub.3 N.sub.4. Similarly, the substrate may be substantially formed of either SiO.sub.2, Si.sub.3 N.sub.4, or a compound of SiO.sub.2 and Si.sub.3 N.sub.4.
    • 存储装置和形成存储装置的方法包括在基板上沉积金属层,并且氧化金属层以形成金红石结构的氧化物,铁氧体材料选择性地生长在该金红石结构上。 衬底可以基本上由SiO 2,Si 3 N 4或SiO 2和Si 3 N 4的化合物形成。 在另一种方法中,形成磁性器件的方法包括以下步骤中的一种:用具有纳米尺寸的Ti,Sn和Ru岛之一的表面接种表面,并且通过将Ti,Sn和Ru中的一种的纳米尺度区域暴露在 基板,并用铁磁材料涂覆Ti,Sn和Ru中的一种。 该表面可以基本上由SiO 2,Si 3 N 4或SiO 2和Si 3 N 4的化合物形成。 类似地,衬底可以基本上由SiO 2,Si 3 N 4或SiO 2和Si 3 N 4的化合物形成。