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51. 发明申请

US20110141268A1 SEMICONDUCTOR DEVICE AND METHOD OF VISUAL INSPECTION AND APPARATUS FOR VISUAL INSPECTION 失效
标题翻译：半导体器件及视觉检测方法及视觉检查装置
公开(公告)号：US20110141268A1
公开(公告)日：2011-06-16
申请号：US13030717
申请日：2011-02-18
申请人： Hokuto KUMAGAI
发明人： Hokuto KUMAGAI
IPC分类号： H04N7/18 , G01N21/88
CPC分类号： G01N21/9501 , G01N21/9505 , G01N2021/8887 , H01L23/544 , H01L23/562 , H01L23/585 , H01L2223/5442 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having the structure, which is adopted for the highly precise visual inspection with a lower cost, is achieved. A semiconductor device is a semiconductor device having a region for forming an electric circuit, and includes seal rings provided in an interconnect layer and surrounding the region for forming an electric circuit, and a dummy metal via provided in the interconnect layer and located outside of the seal rings. In a cross section perpendicular to an elongating direction of the seal ring, the width of the dummy metal via is smaller than the width of the seal ring.
摘要翻译：实现了具有以低成本高精度目视检查所采用的结构的半导体器件。半导体器件是具有用于形成电路的区域的半导体器件，并且包括设置在互连层中并围绕用于形成电路的区域的密封环，以及设置在互连层中并位于互连层外侧的虚设金属通孔密封环。在垂直于密封环的伸长方向的截面中，虚拟金属通孔的宽度小于密封环的宽度。

52. 发明申请

US20110069313A1 METHOD FOR INSPECTING DEFECTS AND DEFECT INSPECTING APPARATUS 有权
标题翻译：检查缺陷和缺陷检查装置的方法
公开(公告)号：US20110069313A1
公开(公告)日：2011-03-24
申请号：US12993389
申请日：2009-05-22
申请人： Kazufumi Sakai , Kazuhiro Nonaka
发明人： Kazufumi Sakai , Kazuhiro Nonaka
IPC分类号： G01N21/956
CPC分类号： G01N21/9505 , G01N21/94 , G01N21/9501 , G01N29/2418 , G01N2021/4792 , G01N2021/8848 , G01N2021/8896 , G06T7/001 , G06T2207/30148 , H01L22/12
摘要： Light from a light source device (4) is polarized through a polarizer (5) and is caused to impinge obliquely on an object (W) to be inspected. The resulting scattered light (SB) is received by a CCD imaging device (7) having an element (9) for separating scattered light disposed in a dark field. Component light intensities are worked out for an obtained P-polarized component image and an obtained S-polarized component image and a polarization direction is determined as a ratio of them. The component light intensities and the polarization directions are determined from images obtained by imaging of the light scattering entities in a state where stress is applied to the object to be inspected and in a state where stress is not applied thereto. The component light intensities and the polarization directions are compared with predetermined threshold values. As a result, defects in the inspection object, such as internal deposits or cavity defects, foreign matter or scratches on the surface or cracks in the surface layer can be detected with high precision and the defects can be classified by identifying the type of the defect.
摘要翻译：来自光源装置（4）的光通过偏振器（5）偏振，并被倾斜地撞击在被检查物体（W）上。得到的散射光（SB）由CCD成像装置（7）接收，CCD成像装置（7）具有用于分离设置在暗场中的散射光的元件（9）。对于获得的P偏振分量图像计算分量光强度，并且将所获得的S偏振分量图像和偏振方向确定为它们的比率。分量光强度和偏振方向由通过在对被检测物体施加应力的状态下和在不施加应力的状态下对光散射体进行成像而获得的图像确定。将分量光强度和偏振方向与预定阈值进行比较。结果，可以高精度地检测检查对象中的缺陷，例如内部沉积物或空腔缺陷，表面上的异物或划痕或表面层的裂纹，并且可以通过识别缺陷的类型来分类缺陷。

53. 发明申请

US20110013013A1 WAFER INSPECTION APPARATUS 有权
标题翻译：防水检查装置
公开(公告)号：US20110013013A1
公开(公告)日：2011-01-20
申请号：US12837279
申请日：2010-07-15
申请人： Yeu Yong LEE , Jung-Jae IM
发明人： Yeu Yong LEE , Jung-Jae IM
IPC分类号： H04N7/18
CPC分类号： G01N21/9505
摘要： A wafer inspection apparatus that performs surface inspection and internal inspection of solar cells using a single apparatus. The wafer inspection apparatus includes a loading unit configured to allow a cassette to be lifted up or lowered by an elevator. A surface inspection unit includes a plurality of stages, thus performing surface inspection of each wafer using a first vision module. A wafer transfer unit has a rotatably installed center portion and has both ends provided with adsorption parts. An internal inspection unit is configured such that a conveyor is installed to allow the wafer to be transferred, thus performing internal inspection of the transferred wafer through a second vision module. An unloading unit enables wafers having completed the internal inspection to be sequentially loaded onto the unloading unit. A control unit controls a series of wafer inspection procedures.
摘要翻译：使用单个装置进行太阳能电池的表面检查和内部检查的晶片检查装置。晶片检查装置包括装载单元，其构造成允许通过电梯将盒子升高或降低。表面检查单元包括多个阶段，因此使用第一视觉模块执行每个晶片的表面检查。晶片传送单元具有可旋转地安装的中心部分，并且两端设置有吸附部分。内部检查单元被构造成使得输送机被安装以允许晶片被转移，从而通过第二视觉模块执行转移的晶片的内部检查。卸载单元使得已经完成内部检查的晶片被顺序地装载到卸载单元上。控制单元控制一系列晶圆检查程序。

54. 发明申请

US20100181483A1 Through-substrate optical imaging device and method 有权
标题翻译：透光成像装置及方法
公开(公告)号：US20100181483A1
公开(公告)日：2010-07-22
申请号：US12588504
申请日：2009-10-16
申请人： Taufiq Habib , Alex F. Schreiner , Jon Marson
发明人： Taufiq Habib , Alex F. Schreiner , Jon Marson
IPC分类号： G01N21/88 , G01N21/01
CPC分类号： G01N21/9501 , G01N21/9505
摘要： A through-substrate optical imaging device for through-imaging of translucent work objects, includes a radiation source outputting radiation that will be transmissive through the work object and an imaging system configured for capturing inspection information from the radiation source through the work object. The radiation source is configured such that the radiation impinges on the surface of the work object under various angles of incidence. A method for through-substrate optical imaging of a translucent work object includes irradiating the translucent work object by radiation from a radiation source; capturing inspection information from the radiation source through the translucent work object, the inspection information being captured by an imaging system; and irradiating the translucent work object. The translucent work object is irradiated by radiation which impinges on the surface of the translucent work object under one of various angles of incidence and orientations.
摘要翻译：一种用于半透明工件的透射成像的贯穿基板光学成像装置，包括：输出将通过工作对象透射的辐射的辐射源;以及被配置为从所述辐射源通过所述工作对象捕获检查信息的成像系统。辐射源被配置成使得辐射以不同的入射角射入工作物体的表面上。半透明工件的透光基板光学成像方法包括通过来自辐射源的辐射照射半透明工件; 从辐射源通过半透明工作对象捕获检查信息，所述检查信息由成像系统捕获; 并照射半透明工件。半透明加工对象被辐射照射在各种入射角度和取向角之下的半透明加工对象的表面上。

55. 发明申请

US20100165095A1 DEFECT INSPECTION DEVICE AND DEFECT INSPECTION METHOD FOR SILICON WAFER 有权
标题翻译：缺陷检查装置和硅片的缺陷检查方法
公开(公告)号：US20100165095A1
公开(公告)日：2010-07-01
申请号：US12451703
申请日：2008-12-09
申请人： Manabu Nakamura
发明人： Manabu Nakamura
IPC分类号： H04N7/18 , G06K9/00
CPC分类号： H01L22/20 , G01N21/3563 , G01N21/8903 , G01N21/9501 , G01N21/9505 , G01N21/958 , G01N2021/8887 , H01L21/67288 , H01L22/12
摘要： A defect inspection device for a silicon wafer comprises: an infrared light illumination which illuminates the silicon wafer with a light power that has been adjusted in accordance with a specific resistance value of the silicon wafer; and an imaging unit constituted by a line sensor array that is sensitive to infrared light, which captures the silicon wafer.
摘要翻译：一种用于硅晶片的缺陷检查装置包括：利用已经根据硅晶片的比电阻值调节的光功率照射硅晶片的红外光照明; 以及由捕获硅晶片的对红外光敏感的线传感器阵列构成的成像单元。

56. 发明申请

US20100136715A1 Screening of Silicon Wafers Used in Photovoltaics 有权
标题翻译：用于光伏的硅晶片的筛选
公开(公告)号：US20100136715A1
公开(公告)日：2010-06-03
申请号：US11722981
申请日：2006-07-28
申请人： Bhushan L. Sopori , Peter Sheldon
发明人： Bhushan L. Sopori , Peter Sheldon
IPC分类号： H01L31/18 , G01N3/60 , H01L21/66
CPC分类号： G01N21/9505 , G01N21/9503 , H01L31/18
摘要： A method for screening silicon-based wafers used in the photovoltaic industry is provided herewith.
摘要翻译：本文提供了一种用于光伏工业中使用的硅基晶片筛选方法。

57. 发明申请

US20100061621A1 Method and device for generating digital still pictures of wafer-shaped elements during a production process 有权
标题翻译：用于在生产过程中产生晶片状元件的数字静止图像的方法和装置
公开(公告)号：US20100061621A1
公开(公告)日：2010-03-11
申请号：US12557050
申请日：2009-09-10
申请人： Michael Stelzl
发明人： Michael Stelzl
IPC分类号： G06K9/00
CPC分类号： G01N21/9501 , G01N21/9505 , G01N2021/845 , G01N2021/8896
摘要： A method and device generate digital still pictures of wafer-shaped elements, such as wafers or solar cells, which are transported in series on a conveyor belt during a production process. The device has a camera taking pictures of the wafer-shaped elements in sections step-by-step, in particular continuously taking digital pictures line-by-line (linear scanning) transverse to the transport direction, and then sampling the recorded image data. The device also includes a hardware-based image data processing unit, e.g. FPGA, for detecting edges of the wafer-shaped elements that indicate a beginning or an end of each of the wafer-shaped elements. The edge detection is for controlling the generation of the digital still pictures for visual inspection to find defective areas of the elements.
摘要翻译：一种方法和装置产生在制造过程中串联输送到传送带上的晶片状元件（例如晶片或太阳能电池）的数字静态照片。该装置具有相机以分段方式截取晶片状元件的照片，特别是与输送方向垂直地逐行（线性扫描）连续拍摄数字图像，然后对记录的图像数据进行采样。该设备还包括基于硬件的图像数据处理单元，例如， FPGA，用于检测指示每个晶片形元件的开始或结束的晶片形元件的边缘。边缘检测用于控制用于目视检查的数字静态图像的生成，以发现元件的缺陷区域。

58. 发明申请

US20080239315A1 APPARATUS AND METHOD FOR DETERMINING STRESS IN SOLAR CELLS 失效
标题翻译：用于确定太阳能电池中应力的装置和方法
公开(公告)号：US20080239315A1
公开(公告)日：2008-10-02
申请号：US11695058
申请日：2007-04-02
申请人： PETER G. BORDEN
发明人： PETER G. BORDEN
IPC分类号： G01J4/00
CPC分类号： G01N21/9505 , G01L5/0047 , G01N21/23 , G01N21/9503
摘要： A method and system as described herein provides for detecting certain anomalies in a wafer. According to one aspect, these anomalies relate to defects or stress that can lead to wafer breakage before, during or after further wafer processing. According to other aspects, the method includes passing polarized light through a wafer and analyzing the transmitted light for any changes in polarization. According to additional aspects, the method includes analyzing the entire wafer in one image capturing operation. According to still further aspects, the light passed through the wafer is below the bandgap for a material such as silicon that comprises the wafer, so that substantially all light will be transmitted through rather than absorbed or reflected by the material. According to still further aspects, the detection operation can be rapid and automatic, so that it can be easily included in an overall processing sequence. According to yet additional aspects, the detection includes analyzing different portions of the wafer differently, for example using different contrast ratios for edge and center portions of the wafer respectively.
摘要翻译：本文所述的方法和系统提供用于检测晶片中的某些异常。根据一个方面，这些异常涉及在另外的晶片处理之前，期间或之后可能导致晶片断裂的缺陷或应力。根据其它方面，该方法包括使偏振光通过晶片并且分析透射光以实现极化的任何改变。根据另外的方面，该方法包括在一个图像捕获操作中分析整个晶片。根据另外的方面，通过晶片的光低于包括晶片的诸如硅的材料的带隙，使得基本上所有的光将被透射而不是被材料吸收或反射。根据另外的方面，检测操作可以快速和自动，从而可以容易地将其包括在整个处理顺序中。根据另外的方面，检测包括分别不同地分析晶片的不同部分，例如分别对晶片的边缘和中心部分使用不同的对比度比。

59. 发明申请

US20080153186A1 Evaluation Method for Crystal Defect in Silicon Single Crystal Wafer 有权
标题翻译：硅单晶硅晶体缺陷评估方法
公开(公告)号：US20080153186A1
公开(公告)日：2008-06-26
申请号：US11883184
申请日：2006-01-23
申请人： Hisayuki Saito , Yutaka Kitagawara
发明人： Hisayuki Saito , Yutaka Kitagawara
IPC分类号： H01L21/66
CPC分类号： G01N21/47 , G01N21/896 , G01N21/9501 , G01N21/9505 , G01N2021/4707 , G01N2021/4735 , G01N2021/8477 , G01N2021/8965 , H01L22/24
摘要： The present invention provides an evaluation method for a crystal defect in a silicon single crystal wafer based on an infrared laser scattering tomograph method, wherein at least, the silicon single crystal wafer is irradiated with a laser beam, and light that enters the silicon single crystal wafer is scattered by a crystal defect, and the scattered light is detected to evaluate a Direct Surface Oxide Defect (DSOD) and a void defect smaller than the DSOD in the silicon single crystal wafer. As a result, the evaluation method for a crystal defect in a silicon single crystal wafer that can simply and precisely evaluate, e.g., a small DSOD, which can be conventionally evaluated based on a Cu deposition method alone, without requiring a wasteful cost.
摘要翻译：本发明提供一种基于红外激光散射断层摄影法的硅单晶晶片的晶体缺陷的评价方法，其中，至少使用激光束照射硅单晶晶片，并且进入硅单晶的光晶片被晶体缺陷散射，并且检测散射光以评估直接表面氧化物缺陷（DSOD）和小于硅单晶晶片中的DSOD的空隙缺陷。结果，可以简单而精确地评估例如小型DSOD的硅单晶晶片中的晶体缺陷的评估方法，其可以单独地基于Cu沉积方法进行常规评估，而不需要浪费的成本。

60. 发明申请

US20080020497A1 METHOD FOR EVALUATING QUALITY OF SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE 有权
标题翻译：用于评价半导体基板的质量的方法和制造半导体基板的方法
公开(公告)号：US20080020497A1
公开(公告)日：2008-01-24
申请号：US11753795
申请日：2007-05-25
申请人： Morimasa Miyazaki
发明人： Morimasa Miyazaki
IPC分类号： H01L21/66
CPC分类号： G01N21/9505 , G01N21/9501 , H01L22/12
摘要： Methods for evaluating a quality of a semiconductor substrate. In one aspect, etching a surface of the semiconductor substrate by dry-etching, detecting bright points on the surface of the etched surface with a foreign matter inspection device, and evaluating the quality of the semiconductor substrate based on the number and/or distribution pattern of the detected bright points are included. In another aspect, etching a surface of the semiconductor substrate by dry-etching, detecting bright points on the surface of the etched surface with a foreign matter inspection device, and evaluating the quality of the semiconductor substrate are included, and the evaluated quality is a type of metal contaminant contained in the substrate, and the type of metal contaminant is identified by conducting elemental analysis of the detected bright points.
摘要翻译：用于评估半导体衬底的质量的方法。在一个方面，通过干法蚀刻来蚀刻半导体衬底的表面，用异物检查装置检测蚀刻表面的亮点，并且基于数量和/或分布图案来评估半导体衬底的质量包含检测到的亮点。在另一方面，通过干蚀刻蚀刻半导体衬底的表面，用异物检查装置检测蚀刻表面的亮点，并评估半导体衬底的质量，并且评估质量为通过对检测到的亮点进行元素分析来鉴定金属污染物的种类和金属污染物的种类。

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