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51. 发明申请

US20080089825A1 Nitride phosphor and production process thereof, and light emitting device 有权
标题翻译：氮化物荧光体及其制造方法以及发光装置
公开(公告)号：US20080089825A1
公开(公告)日：2008-04-17
申请号：US11905725
申请日：2007-10-03
申请人： Hiroto Tamaki , Masatoshi Kameshima , Suguru Takashima
发明人： Hiroto Tamaki , Masatoshi Kameshima , Suguru Takashima
IPC分类号： C01F17/00
CPC分类号： H01L33/502 , C01B21/0602 , C01B21/0821 , C01P2002/52 , C01P2002/84 , C01P2004/03 , C01P2004/61 , C04B35/44 , C04B35/584 , C04B35/597 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3286 , C04B2235/3852 , C04B2235/3873 , C04B2235/3895 , C04B2235/764 , C09K11/0883 , C09K11/77 , C09K11/7702 , C09K11/7703 , C09K11/7728 , C09K11/773 , C09K11/7731 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45169 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48464 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/01019 , H01L2924/01021 , H01L2924/01037 , H01L2924/01055 , H01L2924/01066 , H01L2924/01067 , H01L2924/01068 , H01L2924/01322 , H01L2924/12041 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/00012
摘要： To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula LXMYN((2/3)X+(4/3)Y):R or LXMYOZN((2/3)X+(4/3)Y·(2/3)Z):R (wherein L is at least one or more selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge, and R is at least one or more selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu.); contains the another elements.
摘要翻译：为了提供含有比较多的红色成分并具有高发光效率，高亮度和进一步高耐久性的荧光体，氮化物荧光体由通式L X M Y >（N 2）（（2/3）X +（4/3）Y）：R或L X X Y O /SUB>N_{((2/3)X+(4/3)Y.(2/3)Z)}:R（其中L是选自II族元素中的至少一种或多种，包括的Mg，Ca，Sr，Ba和Zn中的至少一种，M是选自C，Si和Ge中Si必需的IV族元素中的至少一种，R是选自稀土元素中的至少一种以上其中Eu在Y，La，Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er和Lu中是必需的。包含另一个元素。

52. 发明申请

US20080076658A1 Aluminum nitride sintered body 审中-公开
标题翻译：氮化铝烧结体
公开(公告)号：US20080076658A1
公开(公告)日：2008-03-27
申请号：US11527323
申请日：2006-09-26
申请人： Yukihiro Kanechika , Masanobu Azuma
发明人： Yukihiro Kanechika , Masanobu Azuma
IPC分类号： C04B35/581
CPC分类号： C04B35/6261 , C04B35/581 , C04B2235/3208 , C04B2235/3213 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3865 , C04B2235/3895 , C04B2235/445 , C04B2235/446 , C04B2235/5409 , C04B2235/5436 , C04B2235/652 , C04B2235/6587 , C04B2235/662 , C04B2235/9615 , C04B2235/9623 , C04B2235/9653
摘要： [Object] It is an object of the present invention to provide an aluminum nitride sintered body having resistance to plasma gas and high thermal conduction and having excellent optical properties.[Solution means] The aluminum nitride sintered body of the present invention is characterized in that the proportion of positrons which are annihilated within a period of 180 ps (picoseconds) in the aluminum nitride crystal, as determined in the defect analysis using a positron annihilation method, is not less than 90%, and the sintered body preferably has a thermal conductivity of not less than 200 W/mK.
摘要翻译：本发明的目的是提供一种具有耐等离子体气体和高导热性并具有优异光学特性的氮化铝烧结体。 [解决方案]本发明的氮化铝烧结体的特征在于，在使用正电子湮灭法的缺陷分析中确定的在氮化铝晶体中在180ps（皮秒）期间内消除的正电子的比例不小于90％，并且烧结体优选具有不小于200W / mK的热导率。

53. 发明申请

US20080076657A1 Conductive Silicon Nitride Materials and Method for Producing the Same 失效
标题翻译：导电氮化硅材料及其制造方法
公开(公告)号：US20080076657A1
公开(公告)日：2008-03-27
申请号：US11664072
申请日：2005-09-27
申请人： Katsutoshi Komeya , Junichi Tatami , Takeshi Meguro , Tomofumi Katashima , Toru Wakihara
发明人： Katsutoshi Komeya , Junichi Tatami , Takeshi Meguro , Tomofumi Katashima , Toru Wakihara
IPC分类号： C04B35/50
CPC分类号： C04B35/593 , B82Y30/00 , C04B35/5935 , C04B35/638 , C04B2235/3206 , C04B2235/3217 , C04B2235/3225 , C04B2235/3232 , C04B2235/3244 , C04B2235/3258 , C04B2235/3826 , C04B2235/3865 , C04B2235/3869 , C04B2235/3878 , C04B2235/3886 , C04B2235/3895 , C04B2235/526 , C04B2235/5264 , C04B2235/5288 , C04B2235/5445 , C04B2235/604 , C04B2235/658 , C04B2235/661 , C04B2235/766 , C04B2235/77 , C04B2235/80 , C04B2235/85 , C04B2235/96 , C04B2235/963 , C04B2235/9669 , F16C33/32
摘要： To provide a sintered silicon nitride with conductivity and densification, an oxide of titanium group elements, such as titanium oxide, hafnium oxide, zirconium oxide and the like, aluminum oxide and/or aluminum nitride is added as needed to silicon nitride-oxidant of rare-earth elements-aluminum oxide system or silicon nitride-oxide of rare-earth elements-magnesia system, and then specified quantity of carbon nonotube (CNT) is added to the above mixture. CNT generates silicon carbide after the reaction with contiguous or proximal silicon nitride and the like depending on the sintering duration at high temperature. Since silicon carbide is generated along with nanotubes, the silicon carbide functions as conductor with excellent heat resistance, corrosion resistance and the like.
摘要翻译：为了提供具有导电性和致密化性的烧结氮化硅，根据需要，将氧化钛，氧化铪，氧化锆等钛族元素的氧化物，氧化铝和/或氮化铝添加到稀有氮化硅 - 碱土元素 - 氧化铝体系或稀土元素 - 氧化镁体系的氮氧化硅 - 氧化物，然后向上述混合物中加入规定量的碳非管（CNT）。根据高温下的烧结持续时间，CNT与邻接或近似氮化硅等反应后产生碳化硅。由于碳化硅与纳米管一起产生，所以碳化硅作为导体具有优异的耐热性，耐腐蚀性等。

54. 发明申请

US20080032108A1 Barrier film and laminated material, container for wrapping and image display medium using the saw, and manufacturing method for barrier film 审中-公开
公开(公告)号：US20080032108A1
公开(公告)日：2008-02-07
申请号：US11710082
申请日：2007-02-23
申请人： Minoru Komada
发明人： Minoru Komada
IPC分类号： B32B7/00
CPC分类号： C23C14/0036 , B32B9/045 , B32B27/281 , B32B27/286 , B32B27/288 , B32B27/302 , B32B27/304 , B32B27/306 , B32B27/308 , B32B27/32 , B32B27/322 , B32B27/325 , B32B27/34 , B32B27/36 , B32B27/365 , B32B27/38 , B32B2255/20 , B32B2255/26 , B32B2307/202 , B32B2307/306 , B32B2307/31 , B32B2307/412 , B32B2307/514 , B32B2307/546 , B32B2307/558 , B32B2307/712 , B32B2307/714 , B32B2307/72 , B32B2307/7244 , B32B2307/7246 , B32B2307/732 , B32B2307/75 , B32B2439/46 , B32B2439/60 , B32B2439/70 , B32B2439/80 , B32B2457/202 , B32B2553/00 , B65D31/02 , C04B35/565 , C04B35/584 , C04B2235/3856 , C04B2235/3895 , C08J7/045 , C08J7/06 , C08J2367/02 , C23C8/36 , C23C12/02 , C23C14/0676 , C23C14/10 , C23C14/3407 , C23C28/00
摘要： An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the present invention, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, wherein the barrier layer is a silicon oxide film having an atomic ratio in a range of Si:O:C=100:140 to 170:20 to 40, peak position of infrared-ray absorption due to Si—O—Si stretching vibration between 1060 to 1090 cm−1, a film density in a range of 2.6 to 2.8 g/cm3, and a distance between: grains of 30 nm or shorter. Still more, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, has a composition wherein the barrier layer is a silicon oxi-nitride film, and the silicon oxi-nitride film has an atomic ratio in a range of Si:O:N:C=100:60 to 90:60 to 90:20 to 40, a maximum peak of infrared-ray absorption due to Si—O stretching vibration and Si—N stretching vibration is in a range of 820 to 930 cm−1, a film density is in a range of 2.9 to 3.2 g/cm3, and a distance between grains is 30 nm or shorter.

55. 发明申请

US20070223174A1 ELECTROSTATIC CHUCK AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：静电切割及其制造方法
公开(公告)号：US20070223174A1
公开(公告)日：2007-09-27
申请号：US11681335
申请日：2007-03-02
申请人： Yutaka MORI , Kazuhiro Nobori
发明人： Yutaka MORI , Kazuhiro Nobori
IPC分类号： H01L21/683
CPC分类号： C04B35/581 , C04B2235/3222 , C04B2235/3232 , C04B2235/3895 , C04B2235/6565 , C04B2235/78 , C04B2235/85 , H01L21/6833
摘要： An electrostatic chuck includes: a base body formed of an aluminum nitride sintered body containing samarium; and an electrode embedded in the base body and containing molybdenum, wherein a portion of the base body from the electrode to a base body surface is formed into a dielectric layer, and the base body surface is formed into a substrate mounting surface on which a processing target is sucked and mounted, and a content of samarium-aluminum oxide phases in the base body in a vicinity of the electrode is set at 2.5% or less in terms of an area ratio.
摘要翻译：静电卡盘包括：由包含钐的氮化铝烧结体形成的基体; 以及嵌入在基体中并含有钼的电极，其中，从电极到基体表面的基体的一部分形成为电介质层，并且基体表面形成为基板安装面，其上具有加工吸收并安装靶，并且在电极附近的基体中的钐 - 氧化铝相的含量以面积比计为2.5％以下。

56. 发明授权

US07273568B2 Phosphor and production method of the same, method of shifting emission wavelength of phosphor, and light source and LED 有权
标题翻译：荧光体及其制造方法相同，磷光体的发射波长，光源和LED的移动方法
公开(公告)号：US07273568B2
公开(公告)日：2007-09-25
申请号：US10922085
申请日：2004-08-20
申请人： Akira Nagatomi , Masahiro Gotoh , Kenji Sakane , Shuji Yamashita
发明人： Akira Nagatomi , Masahiro Gotoh , Kenji Sakane , Shuji Yamashita
IPC分类号： C09K11/59 , H01L33/00
CPC分类号： C04B35/597 , C04B2235/3208 , C04B2235/3224 , C04B2235/3852 , C04B2235/3865 , C04B2235/3869 , C04B2235/3873 , C04B2235/3895 , C04B2235/5436 , C09K11/7734
摘要： A phosphor including a main production phase of a phosphor expressed by a composition formula of MmAaBbOoNn:Zz (where an element M is one or more bivalent elements, an element A is one or more trivalent elements, an element B is one or more tetravalent elements, O is oxygen, N is nitrogen, an element Z is an activator, n=2/3m+a+4/3b−2/3o, m/(a+b)≧1/2, (o+n)/(a+b)>4/3, wherein m=a=b=1 and o and n is not 0). A phosphor including 24 wt % to 30 wt % of Ca (calcium), 17 wt % to 21 wt % of Al (aluminum), 18 wt % to 22 wt % of Si (silicon), 1 wt % to 15 wt % of oxygen, 15 wt % to 33 wt % of nitrogen and 0.01 wt % to 10 wt % of Eu (europium), wherein an emission maximum in an emission spectrum is in a range of 600 nm to 660 nm; and wherein color chromaticity x of light emission is in a range of 0.5 to 0.7, and color chromaticity y of the light emission is in a range of 0.3 to 0.5.
摘要翻译：一种荧光体，其特征在于，具有由MmAaBbOoNn：Zz的组成式表示的荧光体的主要生成相（元素M为1个以上的2价元素，元素A为1个以上的3价元素，元素B为1个以上的四价元素，O是氧，N是氮，元素Z是活化剂，n = 2 / 3m + a + 4 / 3b-2 / 3o，m /（a + b）> = 1/2，（o + n） /（a + b）> 4/3，其中m = a = b = 1，o和n不为0）。包含24重量％至30重量％的Ca（钙），17重量％至21重量％的Al（铝），18重量％至22重量％的Si（硅），1重量％至15重量％氧，15重量％至33重量％的氮和0.01重量％至10重量％的Eu（铕），其中发射光谱中的发射最大值在600nm至660nm的范围内; 并且其中发光的色度x在0.5至0.7的范围内，并且发光的色度y在0.3至0.5的范围内。

57. 发明申请

US20070129232A1 Ceramic body containing alumina and boron carbide 失效
标题翻译：含有氧化铝和碳化硼的陶瓷体
公开(公告)号：US20070129232A1
公开(公告)日：2007-06-07
申请号：US11649079
申请日：2007-01-03
申请人： Russell Yeckley , Shanghua Wu
发明人： Russell Yeckley , Shanghua Wu
IPC分类号： C04B35/563 , C04B35/10
CPC分类号： C04B35/117 , B82Y30/00 , C04B35/6303 , C04B35/64 , C04B35/645 , C04B35/803 , C04B2235/3206 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3241 , C04B2235/3244 , C04B2235/3246 , C04B2235/3284 , C04B2235/3804 , C04B2235/3813 , C04B2235/3821 , C04B2235/3843 , C04B2235/3856 , C04B2235/3886 , C04B2235/3895 , C04B2235/40 , C04B2235/401 , C04B2235/402 , C04B2235/422 , C04B2235/424 , C04B2235/524 , C04B2235/5244 , C04B2235/5276 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/5463 , C04B2235/549 , C04B2235/656 , C04B2235/661 , C04B2235/77 , C04B2235/78 , C04B2235/786 , C04B2235/80 , C04B2235/96 , Y10T82/10 , Y10T82/141 , Y10T407/27
摘要： A ceramic body that includes between about 15 volume percent and about 35 volume percent of a boron carbide irregular-shaped phase, and at least about 50 volume percent alumina, and the ceramic body has a fracture toughness (KIC, 18.5 Kg Load E&C) greater than or equal to about 4.5 MPa·m0.5.
摘要翻译：一种陶瓷体，其包含约15体积％至约35体积％的碳化硼不规则形状相和至少约50体积％的氧化铝，并且所述陶瓷体具有断裂韧性（K >，18.5Kg负载E＆C）大于或等于约4.5MPa.m <0.5。

58. 发明申请

US20070114705A1 Process for making a ceramic body containing alumina and boron carbide 失效
标题翻译：制造含有氧化铝和碳化硼的陶瓷体的方法
公开(公告)号：US20070114705A1
公开(公告)日：2007-05-24
申请号：US11648984
申请日：2007-01-03
申请人： Russell Yeckley , Shanghua Wu
发明人： Russell Yeckley , Shanghua Wu
IPC分类号： C04B35/563
CPC分类号： C04B35/117 , B82Y30/00 , C04B35/6303 , C04B35/64 , C04B35/645 , C04B35/803 , C04B2235/3206 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3241 , C04B2235/3244 , C04B2235/3246 , C04B2235/3284 , C04B2235/3804 , C04B2235/3813 , C04B2235/3821 , C04B2235/3843 , C04B2235/3856 , C04B2235/3886 , C04B2235/3895 , C04B2235/40 , C04B2235/401 , C04B2235/402 , C04B2235/422 , C04B2235/424 , C04B2235/524 , C04B2235/5244 , C04B2235/5276 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/5463 , C04B2235/549 , C04B2235/656 , C04B2235/661 , C04B2235/77 , C04B2235/78 , C04B2235/786 , C04B2235/80 , C04B2235/96 , Y10T82/10 , Y10T82/141 , Y10T407/27
摘要： A process for making a ceramic body that includes the following steps: providing a starting powder mixture, the starting powder mixture comprises between about 15 volume percent and about 35 volume percent boron carbide powder and at least about 50 volume percent alumina powder and no more than about 5 volume percent of a sintering aid; and consolidating the powder mixture at a temperature equal to between about 1400 degrees Centigrade and 1850 degrees Centigrade to achieve a ceramic with a density equal to greater than 99 percent of theoretical density.
摘要翻译：一种制造陶瓷体的方法，包括以下步骤：提供起始粉末混合物，起始粉末混合物包含约15体积％至约35体积％的碳化硼粉末和至少约50体积％的氧化铝粉末，不超过约5体积％的烧结助剂; 并将该混合物在约1400摄氏度和1850摄氏度之间的温度下固化，以达到密度等于理论密度的99％以上的陶瓷。

59. 发明申请

US20070031703A1 Barrier film and laminated material, container for wrapping and image display medium using the saw, and manufacturing method for barrier film 审中-公开
标题翻译：阻隔膜和层压材料，用于包装的容器和使用锯的图像显示介质以及阻挡膜的制造方法
公开(公告)号：US20070031703A1
公开(公告)日：2007-02-08
申请号：US11496202
申请日：2006-07-31
申请人： Minoru Komada , Yoshihiro Kishimoto
发明人： Minoru Komada , Yoshihiro Kishimoto
IPC分类号： B32B18/00 , C23C14/00
CPC分类号： C23C14/10 , C04B35/565 , C04B35/584 , C04B2235/3856 , C04B2235/3895 , C23C8/36 , C23C12/02 , C23C28/00 , C23C28/04
摘要： An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the present invention, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, wherein the barrier layer is a silicon oxide film having an atomic ratio in a range of Si:O:C=100:140 to 170:20 to 40, peak position of infrared-ray absorption due to Si-O-Si stretching vibration between 1060 to 1090 cm−1, a film density in a range of 2.6 to 2.8 g/cm3, and a distance between: grains of 30 nm or shorter. Still more, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, has a composition wherein the barrier layer is a silicon oxi-nitride film, and the silicon oxi-nitride film has an atomic ratio in a range of Si:O:N:C=100:60 to 90:60 to 90:20 to 40, a maximum peak of infrared-ray absorption due to Si—O stretching vibration and Si—N stretching vibration is in a range of 820 to 930 cm−1, a film density is in a range of 2.9 to 3.2 g/cm3, and a distance between grains is 30 nm or shorter.
摘要翻译：本发明的目的是提供一种具有极高的阻隔性和更好的透明度的阻挡膜及其制造方法，以及叠层材料，用于包装的容器和使用阻挡膜的图像显示介质。根据本发明，提供了一种在基材膜的至少一个表面上设置有阻挡层的阻挡膜，其中阻挡层是原子比在Si：O：C = 100：140〜170：20〜40，由于Si-O-Si伸缩振动在1060〜1090cm -1之间的红外线吸收的峰值位置，膜密度在2.6〜 2.8g / cm 3，晶粒间距离为30nm以下。另外，提供了在基板薄膜的至少一个表面上设置有阻挡层的阻挡膜，具有其中阻挡层为硅氧化氮膜的组成，硅氧化氮膜具有原子比在Si：O:N:C = 100:60至90:60至90:20至40的范围内，由于Si-O伸缩振动和Si-N伸缩振动导致的红外线吸收的最大峰值为范围为820〜930cm -1，膜密度为2.9〜3.2g / cm 3，范围为30nm以下。

60. 发明申请

US20070018567A1 Oxynitride phosphor and light-emitting instrument 审中-公开
标题翻译：氧氮化物荧光粉和发光仪器
公开(公告)号：US20070018567A1
公开(公告)日：2007-01-25
申请号：US10561264
申请日：2004-08-18
申请人： Naoto Hirosaki
发明人： Naoto Hirosaki
IPC分类号： C09K11/08 , C09K11/66
CPC分类号： C04B35/597 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3865 , C04B2235/3869 , C04B2235/3873 , C04B2235/3878 , C04B2235/3895 , C04B2235/5445 , C04B2235/761 , C04B2235/80 , C04B2235/9646 , C09K11/7774 , H01L33/502 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： The invention has for its object the provision of an oxynitride fluorescent material has higher emission luminance than conventional rare earth element-activated sialon fluorescent materials. To this end, an oxynitride fluorescent material is designed in such a way as to contain as the primary constituent a JEM phase represented by a general formula MA1(Si6−zAlz)N10−zOz wherein M is one or two or more elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. For instance, this fluorescent material has a fluorescent spectrum maximum emission wavelength of 420 nm to 500 nm inclusive and an excitation spectrum maximum emission excitation wavelength of 250 nm to 400 nm inclusive.
摘要翻译：本发明的目的是提供氮氧化物荧光材料具有比常规稀土元素激活的赛隆荧光材料更高的发光亮度。为此，氮氧化物荧光材料被设计成以包含作为主要成分的由通式MA1（Si 6-z Al z z）表示的JEM相的方式其中M是选自La，Ce，Pr，Nd，Sm，Eu，Gd中的一种或两种以上的元素，Tb，Dy，Ho，Er，Tm，Yb和Lu。例如，该荧光体的荧光光谱最大发射波长为420nm〜500nm，激发光谱最大发射激发波长为250nm〜400nm。

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