会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 51. 发明授权
    • Clutch assembly for hybrid analog-to-digital converter
    • 用于混合模拟数字转换器的离合器组件
    • US3860102A
    • 1975-01-14
    • US34782073
    • 1973-04-04
    • IDEAL AEROSMITH INC
    • HOSEMANN JOHN HENRY
    • H03M1/00F16D13/38
    • H03M1/26
    • An analog-to-digital converter or encoder utilizes a combination of a standard photoelectric encoder and improved slow-friction long-lasting brush-type encoder which together with the necessary code conversion circuitry will produce an absolute unambiguous decimal digital readout and a visual display of the readout all contained in a single compact housing which can be mounted in direct association to the object being measured. The encoder circuit has an internal clutch arrangement whereby the encoder systems can be selectively disconnected from the input to allow the encoder to remain at zero or some other reference point while the relative positions of the encoder and the object whose position is being measured are changed.
    • 模数转换器或编码器采用标准光电编码器和改进的慢摩擦持久电刷式编码器的组合,连同必要的代码转换电路将产生绝对明确的十进制数字读数和视觉显示 所有这些读数都包含在一个紧凑的外壳中,可以直接关联到正被测量的物体。 编码器电路具有内部离合器装置,由此编码器系统可以选择性地从输入端断开,以允许编码器保持在零或某个其他参考点,同时改变编码器和正在测量其位置的物体的相对位置。
    • 53. 发明授权
    • Electrically programmable read only memory array
    • 电可编程只读存储阵列
    • US3744036A
    • 1973-07-03
    • US3744036D
    • 1971-05-24
    • INTEL CORP
    • FROHMAN BENTCHKOWSKY D
    • G11C16/04G11C11/40
    • G11C16/0433
    • An electrically programmable semiconductor read only memory array which utilizes a floating gate metal-oxide-semiconductor (MOS) device as a storage element is described. The floating gate of the device (storage element) may be negatively charged by avalanche injection. A field effect transistor is coupled in series with the storage element to form a single memory cell. A plurality of cells comprise an array. The gate of the field effect transistor is coupled to an X-line of the memory array and one of the other terminals of this transistor, in one embodiment, is coupled to a Y-line of the array. The array is electrically programmed by application of information to the X and Y lines of the array.
    • 描述了利用浮栅金属氧化物半导体(MOS)器件作为存储元件的电可编程半导体只读存储器阵列。 装置(存储元件)的浮动栅极可能被雪崩注入带负电。 场效应晶体管与存储元件串联耦合以形成单个存储单元。 多个单元包括阵列。 场效应晶体管的栅极耦合到存储器阵列的X线,并且在一个实施例中,该晶体管的另一个端子中的一个耦合到阵列的Y线。 阵列通过将信息应用于阵列的X和Y线进行电气编程。