专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US08145984B2 Reading memory cells using multiple thresholds 有权
标题翻译：使用多个阈值读取存储单元
公开(公告)号：US08145984B2
公开(公告)日：2012-03-27
申请号：US13114049
申请日：2011-05-24
申请人： Naftali Sommer , Ofir Shalvi , Dotan Sokolov
发明人： Naftali Sommer , Ofir Shalvi , Dotan Sokolov
IPC分类号： G06F11/10 , G06F11/30
CPC分类号： G06F11/1068 , G11C8/20 , G11C11/56 , G11C11/5642 , G11C27/005
摘要： A method for operating a memory (28) includes storing data, which is encoded with an Error Correction Code (ECC), in analog memory cells (32) of the memory by writing respective analog input values selected from a set of nominal values to the analog memory cells. The stored data is read by performing multiple read operations that compare analog output values of the analog memory cells to different, respective read thresholds so as to produce multiple comparison results for each of the analog memory cells. At least two of the read thresholds are positioned between a pair of the nominal values that are adjacent to one another in the set of the nominal values. Soft metrics are computed responsively to the multiple comparison results. The ECC is decoded using the soft metrics, so as to extract the data stored in the analog memory cells.
摘要翻译：一种用于操作存储器（28）的方法包括：通过将从一组标称值中选择的相应模拟输入值写入到存储器的模拟存储器单元（32）中来存储用错误校正码（ECC）编码的数据，模拟存储单元。通过执行将模拟存储器单元的模拟输出值与不同的相应读取阈值进行比较的多个读取操作来读取存储的数据，以便为每个模拟存储器单元产生多个比较结果。读取阈值中的至少两个位于在标称值的集合中彼此相邻的一对标称值之间。响应于多个比较结果计算软度量。使用软指标对ECC进行解码，以便提取存储在模拟存储单元中的数据。

52. 发明申请

US20120044762A1 REJUVENATION OF ANALOG MEMORY CELLS 有权
标题翻译：注射模拟记忆细胞
公开(公告)号：US20120044762A1
公开(公告)日：2012-02-23
申请号：US13284913
申请日：2011-10-30
申请人： Barak Rotbard , Naftali Sommer , Shai Winter , Ofir Shalvi , Dotan Sokolov , Or Ordentlich , Micha Anholt
发明人： Barak Rotbard , Naftali Sommer , Shai Winter , Ofir Shalvi , Dotan Sokolov , Or Ordentlich , Micha Anholt
IPC分类号： G11C16/04
CPC分类号： G11C27/005 , G11C11/56 , G11C11/5621 , G11C13/00 , G11C13/0033 , G11C13/0035 , G11C16/0483 , G11C16/3418 , G11C16/3431 , G11C16/349 , G11C29/00 , G11C29/52 , G11C2029/0409 , G11C2029/5002
摘要： A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells.
摘要翻译：一种存储器中的数据存储方法，包括使用相应的物理介质制造的多个模拟存储器单元，包括识别其物理介质在给定的存储质量水平下随时间劣化的一组存储器单元。使组中存储单元的物理介质满足给定存储质量水平的复原过程被应用于所识别的组。数据存储在复原的存储单元组中。

53. 发明授权

US08060806B2 Estimation of non-linear distortion in memory devices 有权
标题翻译：存储器件非线性失真的估计
公开(公告)号：US08060806B2
公开(公告)日：2011-11-15
申请号：US11995813
申请日：2007-08-27
申请人： Ofir Shalvi , Naftali Sommer , Eyal Gurgi , Oren Golov , Dotan Sokolov
发明人： Ofir Shalvi , Naftali Sommer , Eyal Gurgi , Oren Golov , Dotan Sokolov
IPC分类号： G11C29/00
CPC分类号： G11C11/5621 , G11C16/3418 , G11C27/005
摘要： A method for operating a memory (24) includes storing data in analog memory cells (32) of the memory by writing respective analog values to the analog memory cells. A set of the analog memory cells is identified, including an interfered cell having a distortion that is statistically correlated with the respective analog values of the analog memory cells in the set. A mapping is determined between combinations of possible analog values of the analog memory cells in the set and statistical characteristics of composite distortion levels present in the interfered memory cell. The mapping is applied so as to compensate for the distortion in the interfered memory cell.
摘要翻译：一种用于操作存储器（24）的方法包括通过将相应的模拟值写入模拟存储器单元来将数据存储在存储器的模拟存储器单元（32）中。识别一组模拟存储器单元，包括具有与组中的模拟存储器单元的相应模拟值统计相关的失真的干扰单元。在存在于受干扰存储器单元中的复合失真级的集合和统计特性中的模拟存储器单元的可能模拟值的组合之间确定映射。应用映射以补偿受干扰的存储单元中的失真。

54. 发明授权

US08050086B2 Distortion estimation and cancellation in memory devices 有权
标题翻译：内存设备中的失真估计和取消
公开(公告)号：US08050086B2
公开(公告)日：2011-11-01
申请号：US11995801
申请日：2007-05-10
申请人： Ofir Shalvi , Naftali Sommer , Eyal Gurgi , Ariel Maislos
发明人： Ofir Shalvi , Naftali Sommer , Eyal Gurgi , Ariel Maislos
IPC分类号： G11C11/34 , G11C16/04 , G11C16/06
CPC分类号： G06F11/1068 , G06F11/1016 , G11C16/26
摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.
摘要翻译：用于操作存储器（28）的方法包括将存储器的一组模拟存储器单元（32）中的数据存储为相应的第一电压电平。在存储数据之后，从相应的模拟存储器单元读取第二电压电平。第二电压电平受到交叉耦合干扰的影响，导致第二电压电平与相应的第一电压电平不同。通过处理第二电压电平来估计量化模拟存储器单元之间的交叉耦合干扰的交叉耦合系数。使用估计的交叉耦合系数，从读取的第二电压电平重建存储在模拟存储器单元组中的数据。

55. 发明授权

US08000135B1 Estimation of memory cell read thresholds by sampling inside programming level distribution intervals 有权
标题翻译：通过在编程级别分配间隔内采样来估计存储单元读取阈值
公开(公告)号：US08000135B1
公开(公告)日：2011-08-16
申请号：US12558528
申请日：2009-09-13
申请人： Uri Perlmutter , Shai Winter , Eyal Gurgi , Oren Golov , Micha Anholt
发明人： Uri Perlmutter , Shai Winter , Eyal Gurgi , Oren Golov , Micha Anholt
IPC分类号： G11C16/04
CPC分类号： G11C11/5642 , G11C16/26 , G11C27/005 , G11C2211/5634
摘要： A method for data storage includes storing data in a group of analog memory cells by writing into the memory cells in the group respective storage values, which program each of the analog memory cells to a respective programming state selected from a predefined set of programming states. The programming states include at least first and second programming states, which are applied respectively to first and second subsets of the memory cells, whereby the storage values held in the memory cells in the first and second subsets are distributed in accordance with respective first and second distributions. Respective first and second medians of the first and second distributions are estimated, and a read threshold is calculated based on the first and second medians. The data is retrieved from the analog memory cells in the group by reading the storage values using the calculated read threshold.
摘要翻译：一种用于数据存储的方法包括：通过将组各自的存储值中的每个模拟存储器单元编程为从预定的一组编程状态中选择的各自的编程状态，将数据写入一组模拟存储器单元。编程状态包括至少第一和第二编程状态，其分别应用于存储器单元的第一和第二子集，由此保持在第一和第二子集中的存储单元中的存储值根据相应的第一和第二分布。估计第一和第二分布的相应的第一和第二中值，并且基于第一和第二中心计算读取阈值。通过使用计算的读取阈值读取存储值，从组中的模拟存储器单元检索数据。

56. 发明授权

US07925936B1 Memory device with non-uniform programming levels 有权
标题翻译：具有不均匀编程级别的存储器件
公开(公告)号：US07925936B1
公开(公告)日：2011-04-12
申请号：US12171797
申请日：2008-07-11
申请人： Naftali Sommer
发明人： Naftali Sommer
IPC分类号： G06F11/00 , G11C29/00
CPC分类号： G11C11/5628 , G06F11/1048
摘要： A method for storing data in a memory, which includes a plurality of analog memory cells, includes defining programming levels that represent respective combinations of at least first and second bits and are represented by respective nominal storage values. The data is stored by mapping the data to storage values selected from among the nominal storage values and writing the storage values to the memory cells. A condition is defined over two or more bit-specific error rates applicable respectively to at least the first and second bits. The bit-specific error rates include a first bit-specific error rate computed over the data stored by the first bits and a second bit-specific error rate computed, separately from the first bit-specific error rate, over the data stored by the second bits. The nominal storage values are set based on the bit-specific error rates so as to meet the condition.
摘要翻译：一种用于将数据存储在包括多个模拟存储器单元的存储器中的方法，包括定义表示至少第一和第二位的相应组合的编程级别，并且由相应的标称存储值表示。通过将数据映射到从标称存储值中选择的存储值并将存储值写入存储器单元来存储数据。条件被定义在分别适用于至少第一和第二位的两个或多个比特特定的错误率。比特特定的错误率包括在由第一比特存储的数据上计算的第一特定比特率错误率和与第一比特特定错误率分开计算的第二比特特定错误率超过由第二比特存储的数据位。标称存储值根据位特定的错误率进行设置，以满足条件。

57. 发明授权

US07924613B1 Data storage in analog memory cells with protection against programming interruption 有权
标题翻译：数据存储在模拟存储单元中，防止编程中断
公开(公告)号：US07924613B1
公开(公告)日：2011-04-12
申请号：US12497707
申请日：2009-07-06
申请人： Naftali Sommer , Shai Winter , Ofir Shalvi
发明人： Naftali Sommer , Shai Winter , Ofir Shalvi
IPC分类号： G11C11/34
CPC分类号： G11C11/5628 , G11C11/5642 , G11C2211/5621
摘要： A method for data storage includes storing first data in analog memory cells using a first programming operation, which writes to the memory cells respective analog values representing respective bit values of the first data. Second data is stored in the analog memory cells in addition to the first data using a second programming operation, which modifies the respective analog values of the memory cells so as to represent bit value combinations of the first and second data. The first and second programming operations are defined such that, at all times during the second programming operation, the analog value of each memory cell remains unambiguously indicative of the respective bit value of the first data stored in that memory cell.
摘要翻译：一种用于数据存储的方法包括：使用第一编程操作将第一数据存储在模拟存储器单元中，该第一编程操作向存储器单元写入表示第一数据的相应位值的相应模拟值。第二数据除了使用第二编程操作的第一数据之外存储在模拟存储器单元中，第二编程操作修改存储器单元的相应模拟值，以便表示第一和第二数据的位值组合。第一和第二编程操作被定义为使得在第二编程操作期间的任何时刻，每个存储器单元的模拟值保持明确地指示存储在该存储器单元中的第一数据的相应位值。

58. 发明申请

US20100220510A1 Optimized Selection of Memory Chips in Multi-Chips Memory Devices 有权
标题翻译：多片存储器件内存芯片的优化选择
公开(公告)号：US20100220510A1
公开(公告)日：2010-09-02
申请号：US12680901
申请日：2008-11-04
申请人： Ofir Shalvi
发明人： Ofir Shalvi
IPC分类号： G11C5/06 , G11C7/00 , G11C5/02 , G11C5/14
CPC分类号： G11C8/12 , H01L25/0655 , H01L2924/0002 , H01L2924/1434 , H01L2924/00
摘要： A method includes accepting a definition of a type of multi-unit memory device (28) including a set of memory units (24), each having a respective nominal storage capacity, the definition specifying a target memory size of the memory device such that a sum of nominal storage capacities of the memory units in the set is equal to the target memory size. A plurality of the memory units is accepted. The memory units have respective actual storage capacities, at least some of which differ from the respective nominal storage capacity. Multi-unit memory devices including respective sets of the memory units are assembled, such that at least one of the sets includes at least a first memory unit having a first actual capacity that is less than the respective nominal capacity and at least a second memory unit having a second actual capacity that is greater than the nominal capacity.
摘要翻译：一种方法包括接受包括一组存储器单元（24）的多单元存储器设备（28）的类型的定义，每个存储器单元具有相应的标称存储容量，所述定义指定存储器件的目标存储器大小，使得集合中存储单元的标称存储容量的总和等于目标存储器大小。接受多个存储单元。存储单元具有各自的实际存储容量，其中至少一些与相应的标称存储容量不同。包括各组存储器单元的多单元存储器件被组装，使得至少一个组包括至少第一存储器单元，其具有小于相应标称容量的第一实际容量和至少第二存储器单元具有大于标称容量的第二实际容量。

59. 发明申请

US20100195390A1 MEMORY DEVICE WITH NEGATIVE THRESHOLDS 有权
标题翻译：带有负面影响的记忆装置
公开(公告)号：US20100195390A1
公开(公告)日：2010-08-05
申请号：US12758044
申请日：2010-04-12
申请人： Ofir Shalvi
发明人： Ofir Shalvi
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/26
摘要： A method for data storage in a memory that includes a plurality of analog memory cells includes storing data in the memory by writing first storage values to the cells. One or more read reference levels are defined for reading the cells, such that at least one of the read reference levels is negative. After storing the data, second storage values are read from the cells using the read reference levels, so as to reconstruct the stored data. In another disclosed method, data is stored in the memory by mapping the data to first storage values selected from a set of the nominal storage values, and writing the first storage values to the cells. The set of nominal storage values is defined such that at least one of the nominal storage values is negative.
摘要翻译：一种用于在包括多个模拟存储器单元的存储器中的数据存储的方法包括通过向单元写入第一存储值来将数据存储在存储器中。定义一个或多个读取参考电平以读取单元，使得至少一个读取参考电平为负。在存储数据之后，使用读取的参考电平从单元读取第二存储值，以重建存储的数据。在另一公开的方法中，通过将数据映射到从一组标称存储值中选择的第一存储值，并将第一存储值写入单元，将数据存储在存储器中。定义标称存储值的集合，使得标称存储值中的至少一个为负。

60. 发明申请

US20100115376A1 AUTOMATIC DEFECT MANAGEMENT IN MEMORY DEVICES 有权
标题翻译：内存设备中的自动缺陷管理
公开(公告)号：US20100115376A1
公开(公告)日：2010-05-06
申请号：US11995812
申请日：2007-12-03
申请人： Ofir Shalvi , Dotan Sokolov
发明人： Ofir Shalvi , Dotan Sokolov
IPC分类号： H03M13/05 , G06F11/10
CPC分类号： G06F11/1068
摘要： A method for storing data in a memory (28) that includes analog memory cells (32) includes identifying one or more defective memory cells in a group of the analog memory cells. An Error Correction Code (ECC) is selected responsively to a characteristic of the identified defective memory cells. The data is encoded using the selected ECC and the encoded data is stored in the group of the analog memory cells. In an alternative method, an identification of one or more defective memory cells among the analog memory cells is generated. Analog values are read from the analog memory cells in which the encoded data were stored, including at least one of the defective memory cells. The analog values are processed using an ECC decoding process responsively to the identification of the at least one of the defective memory cells, so as to reconstruct the data.
摘要翻译：一种用于将数据存储在包括模拟存储单元（32）的存储器（28）中的方法包括识别一组模拟存储器单元中的一个或多个有缺陷的存储器单元。响应于所识别的有缺陷的存储器单元的特性来选择纠错码（ECC）。使用所选择的ECC对数据进行编码，并将编码的数据存储在模拟存储器单元的组中。在替代方法中，产生模拟存储器单元中的一个或多个有缺陷的存储单元的识别。从其中存储编码数据的模拟存储器单元中读取模拟值，包括至少一个有缺陷的存储器单元。使用ECC解码处理来响应于至少一个缺陷存储器单元的识别来处理模拟值，以便重建数据。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式