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51. 发明申请

US20100079918A1 Method of manufacturing magnetoresistive element, magnetoresistive element, magnetic head assembly and magnetic recording apparatus 有权
标题翻译：制造磁阻元件，磁阻元件，磁头组件和磁记录装置的方法
公开(公告)号：US20100079918A1
公开(公告)日：2010-04-01
申请号：US12585623
申请日：2009-09-18
申请人： Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
发明人： Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
IPC分类号： G11B5/33 , C23C8/10
CPC分类号： C23C8/36 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/398 , G11B5/3983 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/08
摘要： A method of manufacturing a magnetoresistive element includes forming a metal layer on a first ferromagnetic layer, oxidizing the metal layer to form an oxide layer in which unoxidized metal is remained and a magnetic conduction column penetrating the oxide layer in a thickness direction and including at least a part of constituent elements of the first ferromagnetic layer, annealing a resultant structure at a higher temperature than a temperature at which the oxide layer is formed to convert at least a part of a periphery of the magnetic conduction column into a magnetic oxide including a part of constituent elements of the oxide layer and at least a part of constituent elements of the magnetic conduction column, and forming a second ferromagnetic layer.
摘要翻译：一种制造磁阻元件的方法包括在第一铁磁层上形成金属层，氧化金属层以形成其中保留非氧化金属的氧化物层和在厚度方向上贯穿氧化物层的磁导柱，并且至少包括第一铁磁层的构成元件的一部分，在比形成氧化物层的温度更高的温度下对所得结构进行退火，以将至少一部分导磁柱的周边转化成包括部分的磁性氧化物的氧化物层的构成元素和磁导柱的构成元素的至少一部分，并形成第二铁磁层。

52. 发明授权

US08031443B2 Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and method for manufacturing a magneto-resistance effect element 有权
标题翻译：磁阻效应元件，磁头，磁记录/再现装置及制造磁阻效应元件的方法
公开(公告)号：US08031443B2
公开(公告)日：2011-10-04
申请号：US12071589
申请日：2008-02-22
申请人： Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
发明人： Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B2005/3996
摘要： A magneto-resistance effect element, including: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.
摘要翻译：一种磁电阻效应元件，包括：第一磁化层，其一个方向上的磁化基本固定; 磁化根据外部磁场旋转的第二磁化层; 中间层，其包含绝缘部分和磁性金属部分，并且设置在第一磁性层和第二磁性层之间; 以及一对电极，其在垂直于由第一磁性层，中间层和第二磁性层制成的多层膜的膜表面的方向上流动电流; 其中中间层的磁性金属部分含有非铁磁性金属。

53. 发明申请

US20080080098A1 Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory 审中-公开
标题翻译：磁阻效应元件，磁头，磁记录/再现装置和磁存储器
公开(公告)号：US20080080098A1
公开(公告)日：2008-04-03
申请号：US11892890
申请日：2007-08-28
申请人： Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
发明人： Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F41/305 , H01L43/08
摘要： A magneto-resistance effect element includes: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.
摘要翻译：磁阻效应元件包括：第一磁化层，其一个方向基本上固定磁化; 磁化根据外部磁场旋转的第二磁化层; 中间层，其包含绝缘部分和磁性金属部分，并且设置在第一磁性层和第二磁性层之间; 以及一对电极，其在垂直于由第一磁性层，中间层和第二磁性层制成的多层膜的膜表面的方向上流动电流; 其中中间层的磁性金属部分含有非铁磁性金属。

54. 发明授权

US08331062B2 Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory 有权
标题翻译：磁阻效应元件，磁头，磁记录/再现装置和磁存储器
公开(公告)号：US08331062B2
公开(公告)日：2012-12-11
申请号：US13291743
申请日：2011-11-08
申请人： Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
发明人： Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
IPC分类号： G11B5/39 , H01L29/82 , H01L23/12
CPC分类号： G11B5/398 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F41/305 , H01L43/08
摘要： A magneto-resistance effect element includes: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.
摘要翻译：磁阻效应元件包括：第一磁化层，其一个方向基本上固定磁化; 第二磁化层，其磁化根据外部磁场旋转; 中间层，其包含绝缘部分和磁性金属部分，并且设置在第一磁性层和第二磁性层之间; 以及一对电极，其在垂直于由第一磁性层，中间层和第二磁性层制成的多层膜的膜表面的方向上流动电流; 其中中间层的磁性金属部分含有非铁磁性金属。

55. 发明申请

US20120182647A1 MAGNETORESISTIVE ELEMENT 有权
标题翻译：磁电元件
公开(公告)号：US20120182647A1
公开(公告)日：2012-07-19
申请号：US13360856
申请日：2012-01-30
申请人： Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
发明人： Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
IPC分类号： G11B5/39 , C23C8/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01L43/08 , Y10T428/1107
摘要： According to one embodiment, a magnetoresistive element includes a first ferromagnetic layer a magnetization direction of which is pinned, a second ferromagnetic layer a magnetization direction of which is changed depending on an external magnetic field, an intermediate layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and including an insulating layer and a magnetic conductive column, an alloy layer formed between the magnetic conductive column in the intermediate layer and the second ferromagnetic layer and including at least one of FeCoAl and FeCoAlCu, and a pair of electrodes configured to supply a current perpendicularly to a film plane of a stacked film including the first ferromagnetic layer, the intermediate layer, the alloy layer and the second ferromagnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括其磁化方向被钉扎的第一铁磁层，其磁化方向根据外部磁场而改变的第二铁磁层，布置在第一铁磁层和第二铁磁层之间的中间层第二铁磁层，并且包括绝缘层和导电柱，在中间层中的导电柱和第二铁磁层之间形成并且包括FeCoAl和FeCoAlCu中的至少一种的合金层，以及一对电极，垂直于包括第一铁磁层，中间层，合金层和第二铁磁层的层叠膜的膜平面的电流。

56. 发明申请

US20070230069A1 Magnetoresistive element, magnetic head, and magnetic reproducing apparatus 审中-公开
标题翻译：磁阻元件，磁头和磁再现装置
公开(公告)号：US20070230069A1
公开(公告)日：2007-10-04
申请号：US11727404
申请日：2007-03-26
申请人： Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
发明人： Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B2005/3996 , H01L43/10
摘要： A magnetoresistive element has a magnetization pinned layer including a magnetic film a magnetization direction of which is substantially pinned in one direction, a magnetization free layer including a magnetic film a magnetization direction of which is varied depending on an external magnetic field, a composite spacer layer interposed between the magnetization pinned layer and the magnetization free layer, and including an insulating portion and a magnetic metal portion, and a pair of electrodes configured to supply a sense current in a direction perpendicular to planes of the magnetization pinned layer, the composite spacer layer and the magnetization free layer, in which the magnetic film included in the magnetization pinned layer and being in contact with the composite spacer layer has a bcc structure.
摘要翻译：磁阻元件具有磁化被钉扎层，该磁化被钉扎层包括磁化膜，其磁化方向基本上被固定在一个方向上，磁化自由层包括磁化膜，其磁化方向根据外部磁场而变化，复合间隔层插入在磁化固定层和磁化自由层之间，并且包括绝缘部分和磁性金属部分，以及一对电极，被配置为在与磁化被钉扎层的平面垂直的方向上提供感测电流，复合间隔层和磁化自由层，其中包括在磁化被钉扎层中并与复合间隔层接触的磁性膜具有bcc结构。

57. 发明申请

US20080239590A1 Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and method for manufacturing a magneto-resistance effect element 有权
标题翻译：磁阻效应元件，磁头，磁记录/再现装置及制造磁阻效应元件的方法
公开(公告)号：US20080239590A1
公开(公告)日：2008-10-02
申请号：US12071589
申请日：2008-02-22
申请人： Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
发明人： Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
IPC分类号： G11B5/33
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B2005/3996
摘要： A magneto-resistance effect element, including: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.
摘要翻译：一种磁电阻效应元件，包括：第一磁化层，其一个方向上的磁化基本固定; 磁化根据外部磁场旋转的第二磁化层; 中间层，其包含绝缘部分和磁性金属部分，并且设置在第一磁性层和第二磁性层之间; 以及一对电极，其在垂直于由第一磁性层，中间层和第二磁性层制成的多层膜的膜表面的方向上流动电流; 其中中间层的磁性金属部分含有非铁磁性金属。

58. 发明授权

US5750273A Soft magnetic thin film and thin film magnetic element using the same 失效
标题翻译：软磁薄膜和薄膜磁性元件使用相同
公开(公告)号：US5750273A
公开(公告)日：1998-05-12
申请号：US623529
申请日：1996-03-29
申请人： Tetsuo Inoue , Hiroshi Tomita , Tetsuhiko Mizoguchi , Hiromi Fuke
发明人： Tetsuo Inoue , Hiroshi Tomita , Tetsuhiko Mizoguchi , Hiromi Fuke
IPC分类号： H01F10/14 , G11B5/31 , H01F10/12 , H01F10/13 , H01F10/16 , H01F10/187 , H01F17/00 , H01F17/04 , H01F41/18 , H01F41/20 , G11B5/66
CPC分类号： H01F10/131 , H01F10/187 , H01F17/04 , G11B5/3113 , Y10S428/90 , Y10T428/12931 , Y10T428/12979
摘要： A thin film magnetic element is disclosed which uses a soft magnetic thin film having a composition represented by the general formula: T.sub.100-x-y M.sub.x (AO.sub.v).sub.y (wherein T stands for at least one element selected from the group consisting of Fe and Co, M for at least one element selected from the group consisting of Zr, Hf, Nb, and Y, and A for at least one element selected from the group consisting of Si, Ge, Sn, B, P, and C, and x, y, and v respectively satisfy the expressions, 5.ltoreq.x.ltoreq.20 at. %, 8.ltoreq.y.ltoreq.25 at. %, and 0.ltoreq.v.ltoreq.2), consisting of a homogeneous amorphous phase, and having resistivity of not less than 1000 .mu..OMEGA..multidot.cm. Further, a thin film magnetic element is disclosed which uses a soft magnetic thin film of a microstructure having a composition substantially represented by the general formula, T.sub.100-x-z M.sub.x (AO.sub.v).sub.z (1.ltoreq.z.+-.10 at. %) and consisting of a microcrystalline phase and a first amorphous phase and a second amorphous phase disposed around the phases mentioned above.
摘要翻译：公开了一种薄膜磁性元件，其使用具有由以下通式表示的组成的软磁性薄膜：T100-x-yMx（AOv）y（其中T表示选自Fe和Co中的至少一种元素，选自由Zr，Hf，Nb和Y组成的组中的至少一种元素的M，以及选自Si，Ge，Sn，B，P和C中的至少一种元素的A和x ，y和v分别满足以下表达式：5≤x≤20原子％，8≤y≤25原子％，0≤v≤2），由均匀非晶相，电阻率不小于1000μmOMEGA xcm。此外，公开了一种薄膜磁性元件，其使用具有基本上由通式T100-x-zMx（AOv）z（1≤z+/- 10at。％）组成的组成的微结构的软磁薄膜，），并且由微晶相和第一非晶相以及设置在上述相周围的第二非晶相组成。

59. 发明授权

US5522946A Amorphous magnetic thin film and plane magnetic element using same 失效
标题翻译：非晶磁性薄膜和使用其的平面磁性元件
公开(公告)号：US5522946A
公开(公告)日：1996-06-04
申请号：US266757
申请日：1994-06-28
申请人： Hiroshi Tomita , Tetsuo Inoue , Hiromi Fuke , Toshiro Sato , Tetsuhiko Mizoguchi
发明人： Hiroshi Tomita , Tetsuo Inoue , Hiromi Fuke , Toshiro Sato , Tetsuhiko Mizoguchi
IPC分类号： C22C45/00 , H01F10/12 , H01F10/13 , H01F10/16 , H01F19/00 , H01F30/10 , H01F1/153
CPC分类号： H01F10/131 , H01F10/132 , H01F30/10
摘要： An amorphous magnetic thin film possesses as at least part of a thin film forming area a microstructure composed of a first amorphous phase containing at least either of iron and cobalt and bearing magnetism and a second amorphous phase disposed round the first amorphous phase and containing boron and at least one element selected from among the elements of the 4B Group in the Periodic Table of Elements and exhibits uniaxial magnetic anisotropy in the plane of film. The amorphous magnetic thin film possesses soft magnetism concurrently satisfying high saturation magnetization and high resistivity and, at the same time, easily acquires high frequency permeability by applying magnetic field in the hard axis of magnetization. Use of these amorphous magnetic thin films for plane magnetic elements permits the plane magnetic elements to be miniaturized and to be endowed with exalted performance. The amorphous magnetic thin film possesses a composition substantially represented by the formula:(Fe.sub.1-x Co.sub.x).sub.1-y (B.sub.1-z X.sub.z).sub.y(wherein X stands for at least one element selected from among the 4B Group elements and x, y, and z stand for numerals satisfying the expressions, 0
摘要翻译：无定形磁性薄膜至少具有薄膜形成区域的至少一部分，该微结构由包含铁和钴中的至少一种和承载磁性的第一非晶相组成，而第二非晶相设置在第一非晶相周围并含有硼和选自元素周期表4B族的元素中的至少一种元素，并且在膜的平面中显示单轴磁各向异性。非晶磁性薄膜具有同时满足高饱和磁化强度和高电阻率的软磁性，同时通过在硬磁化轴上施加磁场容易地获得高频磁导率。这些非晶磁性薄膜用于平面磁性元件允许平面磁性元件小型化并赋予高级性能。非晶磁性薄膜具有基本上由式（Fe1-xCox）1-y（B1-zXz）y表示的组成（其中X表示选自4B族元素中的至少一种元素，x，y和 z表示满足表达式0

60. 发明授权

US5387551A Method of manufacturing flat inductance element 失效
标题翻译：扁平电感元件制造方法
公开(公告)号：US5387551A
公开(公告)日：1995-02-07
申请号：US26027
申请日：1993-03-04
申请人： Tetsuhiko Mizoguchi , Atsuhito Sawabe , Hiromi Fuke , Toshiro Sato
发明人： Tetsuhiko Mizoguchi , Atsuhito Sawabe , Hiromi Fuke , Toshiro Sato
IPC分类号： H01F41/02 , H01F41/04 , H01L21/265
CPC分类号： H01F41/046 , H01F41/02 , H01F2017/0086 , Y10S148/012
摘要： A method of manufacturing a planar inductance element, including the steps of forming a thermal oxide film, a magnetic film, a first insulating interlayer, a planar coil, and a second insulating interlayer on a first semiconductor substrate, forming an insulating film and a magnetic film on a second semiconductor substrate, and adhering the first and the second semiconductor substrates such that the coil side of the first semiconductor substrate faces the magnetic film side of the second semiconductor substrate. According to this method, a stress generated by stacking thin films can be reduced compared with that of a conventional inductance element. Therefore, a high-frequency loss can be reduced, and a quality coefficient Q can be increased.
摘要翻译：一种制造平面电感元件的方法，包括在第一半导体衬底上形成热氧化膜，磁膜，第一绝缘中间层，平面线圈和第二绝缘中间层的步骤，形成绝缘膜和磁在第二半导体衬底上形成薄膜，并且使第一和第二半导体衬底粘合，使得第一半导体衬底的线圈侧面向第二半导体衬底的磁性膜侧。根据该方法，与传统的电感元件相比，可以减少堆叠薄膜产生的应力。因此，可以降低高频损失，并且可以提高质量系数Q。

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