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    • 51. 发明申请
    • PLASMA TORCH, PLASMA TORCH NOZZLE, AND PLASMA-WORKING MACHINE
    • 等离子喷枪,等离子喷枪喷嘴和等离子工作机
    • US20100155373A1
    • 2010-06-24
    • US12600616
    • 2008-06-27
    • Yoshihiro YamaguchiKazuhiro Kuraoka
    • Yoshihiro YamaguchiKazuhiro Kuraoka
    • B23K10/00
    • H05H1/34H05H2001/3426H05H2001/3457
    • A plasma torch includes a torch main unit and a nozzle. The torch main unit has a nozzle seat member on which the nozzle is mounted. The nozzle is arranged to move toward or away from the nozzle seat member in a direction substantially parallel to a center axis of the nozzle when the nozzle is mounted on or removed from the nozzle seat member. The nozzle has an electroconductive surface facing the nozzle seat member. The torch main unit has an elastic electric contact portion contacting with the electroconductive surface of the nozzle to form an electroconductive path for a pilot arc to the nozzle. The electroconductive surface of the nozzle presses the electric contact portion in the direction substantially parallel to the center axis when the nozzle is moved toward the nozzle seat member to mount the nozzle on the nozzle seat member.
    • 等离子体焰炬包括火炬主单元和喷嘴。 割炬主体具有安装喷嘴的喷嘴座构件。 喷嘴被布置成当喷嘴安装在喷嘴座构件上或从喷嘴座构件移除时沿大致平行于喷嘴的中心轴线的方向朝向或远离喷嘴座构件移动。 喷嘴具有面向喷嘴座构件的导电表面。 手电筒主体具有与喷嘴的导电表面接触的弹性电接触部分,以形成用于引导电弧到喷嘴的导电路径。 当喷嘴朝向喷嘴座构件移动以将喷嘴安装在喷嘴座构件上时,喷嘴的导电表面在基本上平行于中心轴线的方向上按压电接触部分。
    • 52. 发明授权
    • Imaging device, imaging method and imaging program
    • 成像设备,成像方法和成像程序
    • US07711190B2
    • 2010-05-04
    • US11365671
    • 2006-03-02
    • Yoshihiro Yamaguchi
    • Yoshihiro Yamaguchi
    • G06K9/00
    • G06K9/00281G03B7/08G03B17/00H04N5/232H04N5/23219
    • The present invention provides an imaging device comprising an imaging unit for photographing an image, a face extracting unit for extracting a face region including a person's face part from said image, a rating calculation unit for calculating a rating from said extracted face region, a threshold setting unit for accepting setting of a threshold for said rating, and a photograph indicating unit for indicating re-photograph based on comparison of said rating and said threshold. According to the imaging device of the present invention, re-photograph is indicated based on comparison of the rating and the threshold. A user can easily obtain a satisfactory image by repeating photograph until the rating obtained from the face region reaches the threshold.
    • 本发明提供了一种成像装置,其特征在于,具备拍摄图像的摄像部件,从所述图像中提取包含人脸部的面部区域的脸部提取部,从所述提取的面部区域计算出评价值的评价计算部, 用于接受所述评级的阈值的设置的设置单元,以及基于所述评级和所述阈值的比较来指示重新拍摄的照片指示单元。 根据本发明的成像装置,基于评级和阈值的比较来指示重新拍摄。 用户可以通过重复照片容易地获得令人满意的图像,直到从脸部区域获得的评分达到阈值。
    • 53. 发明授权
    • Cutting machine
    • 切割机
    • US07674998B2
    • 2010-03-09
    • US11597286
    • 2005-05-26
    • Satoshi OhnishiYoshihiro Yamaguchi
    • Satoshi OhnishiYoshihiro Yamaguchi
    • B23K9/00
    • B23K26/38B23K7/00B23K9/013B23K9/325B23K10/00B23K26/0876B23K26/142B23K37/0229B23K37/0461B23K2101/18Y10T83/05Y10T83/7693
    • To enable the amount of air capable of bringing smoke to the vicinity of a discharge opening of a gas discharge chamber to be sent into the gas discharge chamber. A cutting machine has gas discharge chambers arranged side by side by partitioning the inside of a table, blower openings each provided on one end side of a gas discharge chamber, gas discharge openings each provided on the other side of the gas discharge chamber, and fans for sending air, while moving to the outside of the table, to at least one gas discharge chamber from the blower opening of the gas discharge chamber and arranged in the direction of the movement. The fans are arranged at intervals such that two or more fans face the blower opening of one gas discharge chamber, and the two or more fans can simultaneously send air to the one gas discharge chamber.
    • 使能够将气体排出到排气室的排气口附近的空气量送入气体排出室。 切割机具有通过分隔桌子内侧并排布置的排气室,设置在排气室的一端侧的鼓风机开口,设置在气体排出室的另一侧的气体排出口,以及风扇 用于在从桌子的外部移动到从气体排出室的鼓风机开口至少一个排气室的同时沿着运动方向布置的空气。 风扇间隔布置,使得两个或更多个风扇面对一个气体放电室的鼓风机开口,并且两个或更多个风扇可以同时向一个气体放电室发送空气。
    • 57. 发明申请
    • Plasma cutter, and plasma cutter power supply system
    • 等离子切割机和等离子切割机供电系统
    • US20080093347A1
    • 2008-04-24
    • US11907838
    • 2007-10-18
    • Yoshihiro YamaguchiTakahiro Iriyama
    • Yoshihiro YamaguchiTakahiro Iriyama
    • H05H1/36B23K9/10H05H1/26
    • H05H1/36
    • In a main circuit 11 of the plasma cutter power supply device 6, a plurality of DC power units 14-1, . . . 14-n of low capacity are connected in parallel on their DC output sides, and are connected to a plasma torch 20. Each power unit 14-1, . . . 14-n can operate asynchronously and independently from each other. The power supply control device 6 controls the number of power units to be operated, and the intensity of output electrical current at which each of them is to be operated, according to the cutting conditions (the nature of the material to be cut, its thickness, and the cutting speed) and according to the number of power units which can be operated. If some of the power units are faulty, the power supply control device 6 controls the cutting conditions which can be accepted, according to the number of normal power units.
    • 在等离子切割器电源装置6的主电路11中,多个直流电力单元14-1, 。 。 14 -n的低容量在其直流输出侧并联连接,并连接到等离子体焰炬20。 每个电源单元14-1,。 。 。 14 -n可以彼此异步和独立地操作。 电源控制装置6根据切割条件(待切割材料的性质,其厚度等)来控制要操作的功率单元的数量和要各自操作的输出电流的强度 ,切割速度)以及可以操作的动力单元的数量。 如果一些动力单元有故障,则电源控制装置6根据正常功率单元的数量来控制可以接受的切割条件。
    • 59. 发明授权
    • Pressed-contact type semiconductor device
    • 压接式半导体器件
    • US07301178B2
    • 2007-11-27
    • US11212602
    • 2005-08-29
    • Yoshihiro YamaguchiKenji Oota
    • Yoshihiro YamaguchiKenji Oota
    • H01L29/74
    • H01L29/0661H01L24/72H01L29/0615H01L29/0657H01L29/32H01L29/74H01L2924/0102H01L2924/1301H01L2924/00
    • A P++-type first diffusion layer is formed by diffusing P-type impurities on a front side of an N−-type semiconductor substrate, and an N-type fourth diffusion layer which is shallower than the first diffusion layer is formed by diffusing N-type impurities on the front side, and a P-type second diffusion layer is locally formed in a ring-shape so as to be exposed on the lateral side by diffusing P-type impurities on the back side, and P-type impurities are diffused on the back side of the substrate and a P+-type third diffusion layer is locally formed so as to be distributed inward from the second diffusion layer and not to be exposed to the lateral side, and the P-type second diffusion layer and the P+-type third diffusion layer are formed in the two-stage structure, thereby various characteristics can be improved.
    • AP ++类型的第一扩散层是通过在N +型半导体衬底的正面扩散P型杂质形成的,N型第四扩散层 通过在前侧扩散N型杂质而形成比第一扩散层浅的层,并且P型第二扩散层局部形成为环状,以便通过扩散P而暴露在侧面 型杂质,P型杂质扩散到基板的背面,局部地形成P +型第三扩散层,以从第二层向内分布 扩散层并且不暴露于侧面,并且P型第二扩散层和P + +型第三扩散层形成在两级结构中,因此可以有各种特性 改进。