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51. 发明授权

US06753124B2 Radiation-sensitive resin composition 有权
标题翻译：辐射敏感树脂组合物
公开(公告)号：US06753124B2
公开(公告)日：2004-06-22
申请号：US09874977
申请日：2001-06-07
申请人： Yukio Nishimura , Katsuji Douki , Toru Kajita , Tsutomu Shimokawa
发明人： Yukio Nishimura , Katsuji Douki , Toru Kajita , Tsutomu Shimokawa
IPC分类号： G03F7004
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： A radiation-sensitive resin composition used as a chemically amplified positive tone resist responsive to short wavelength active radiation such as KrF excimer laser and ArF excimer laser is disclosed. The resin composition comprises: (A) an acid-dissociable group-containing resin which is insoluble or scarcely soluble in alkali and becomes alkali soluble when the acid-dissociable group dissociates, the resin comprising a lactone cyclic structure of the following formula (1): wherein a is an integer from 1-3, b is an integer from 0-9, and R1 represents a monovalent organic group, and (B) a photoacid generator. The composition has high transmittance of radiation, exhibits high sensitivity, resolution, and pattern shape, and can produce semiconductors at a high yield without producing resolution defects during microfabrication.
摘要翻译：公开了一种用作响应于短波长有效辐射的化学放大正色调抗辐射的辐射敏感树脂组合物，例如KrF准分子激光器和ArF准分子激光器。该树脂组合物包含：（A）一种酸解离基团的树脂，其在酸解离基团解离时不溶或几乎不溶于碱并可溶于碱，该树脂包含下式（1）的内酯环状结构，：其中a是1-3的整数，b是0-9的整数，R 1表示一价有机基团，和（B）光酸产生剂。该组合物具有高透射率的辐射，显示出高灵敏度，分辨率和图案形状，并且可以以高产率制造半导体而不会在微细加工过程中产生分辨率缺陷。

52. 发明授权

US06677419B1 Preparation of copolymers 失效
标题翻译：共聚物的制备
公开(公告)号：US06677419B1
公开(公告)日：2004-01-13
申请号：US10293740
申请日：2002-11-13
申请人： Phillip J. Brock , Eiichi Kobayashi , Isao Nishimura , Yukio Nishimura , Thomas I. Wallow , Masafumi Yamamoto
发明人： Phillip J. Brock , Eiichi Kobayashi , Isao Nishimura , Yukio Nishimura , Thomas I. Wallow , Masafumi Yamamoto
IPC分类号： C08F1000
CPC分类号： C08F232/08 , C08F220/06 , C08F220/18 , C08F220/28
摘要： A scaleable and high-yielding method of preparing copolymers that is useful as a component of a radiation sensitive resin composition is provided. The method includes the step of reacting at least one monomer A which is an unsaturated alicyclic monomer and forms a polymer main chain by dissociation of the unsaturated bond, and at least one unsaturated monomer B, which also forms a polymer chain by dissociation of an unsaturated bond, wherein less than two electron-withdrawing groups are directly appended to said unsaturation, and where said monomer B is other than the unsaturated alicyclic monomer and forms a polymer main chain, in the presence of a free radical initiator. The reacting step is carried out in a stoichiometric excess of monomer A as compared to monomer B. By carrying out the reacting step in an excess of monomer A as compared to monomer B, the resultant copolymer will have a greater molar concentration of monomer A than is obtainable using other methods.
摘要翻译：提供了可用作辐射敏感性树脂组合物的组分的共聚物的可扩展和高产率的方法。所述方法包括使至少一种不饱和脂环族单体的单体A与不饱和键解离形成聚合物主链的至少一种不饱和单体B，其通过不饱和键解离形成聚合物链键，其中少于两个吸电子基团直接连接到所述不饱和基团上，并且其中所述单体B不同于不饱和脂环族单体并形成聚合物主链，在自由基引发剂存在下。与单体B相比，反应步骤在化学计量过量的单体A中进行。通过与单体B相比，通过进行过量单体A的反应步骤，所得共聚物将具有比单体A更大的摩尔浓度可以使用其他方法获得。

53. 发明授权

US06403288B1 Resist pattern formation method 有权
标题翻译：抗蚀图案形成方法
公开(公告)号：US06403288B1
公开(公告)日：2002-06-11
申请号：US09520345
申请日：2000-03-07
申请人： Yukio Nishimura , Toshiyuki Kai , Eiichi Kobayashi , Takeo Shioya
发明人： Yukio Nishimura , Toshiyuki Kai , Eiichi Kobayashi , Takeo Shioya
IPC分类号： G03F7039
CPC分类号： G03F7/30 , G03F7/0045 , Y10S430/115
摘要： A method of forming a resist pattern from a chemically amplified positive radiation sensitive resin composition. The film thickness of an unexposed portion of a resist film formed from the chemically amplified positive radiation sensitive resin composition after wet development is 100 to 400 Å smaller than that before wet development. Alternatively, a resist film formed from the chemically amplified positive radiation sensitive resin composition is wet developed at both a temperature and a time enough to ensure that the film thickness of an unexposed portion of the resist film after wet development is 100 to 400 Å smaller than that before wet development. A resist film which is formed from a chemically amplified positive radiation sensitive resin composition and experiences a 100 to 400 Å reduction in the film thickness of an unexposed portion by wet development is useful as a resist film for forming a resist pattern.
摘要翻译：从化学放大正射线敏感性树脂组合物形成抗蚀剂图案的方法。湿法显影后由化学放大的正性辐射敏感性树脂组合物形成的抗蚀剂膜的未曝光部分的膜厚比以前小100至400埃湿发展。或者，由化学放大的正性辐射敏感性树脂组合物形成的抗蚀剂膜在足以确保湿显影后抗蚀剂膜的未曝光部分的膜厚度比100至400小的温度和时间都被湿成型在湿显影之前的抗蚀剂膜是由化学放大的正性辐射敏感性树脂组合物形成的抗蚀剂膜，通过湿显影而经历100〜400的未曝光部分的膜厚度的降低作为形成抗蚀剂图案的抗蚀剂膜是有用的。

54. 发明授权

US09261789B2 Liquid immersion lithography upper-layer film-forming composition and photoresist pattern-forming method 有权
标题翻译：液浸光刻上层成膜组合物和光致抗蚀剂图案形成方法
公开(公告)号：US09261789B2
公开(公告)日：2016-02-16
申请号：US13110855
申请日：2011-05-18
申请人： Takahiro Hayama , Kazunori Kusabiraki , Yukio Nishimura , Ken Maruyama , Kiyoshi Tanaka
发明人： Takahiro Hayama , Kazunori Kusabiraki , Yukio Nishimura , Ken Maruyama , Kiyoshi Tanaka
IPC分类号： G03F7/11 , G03F7/20 , C08F220/24 , C08F220/30 , C08F220/18 , G03F7/004 , G03F7/039 , C08F228/02
CPC分类号： G03F7/11 , C08F220/18 , C08F220/24 , C08F220/30 , C08F228/02 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A liquid immersion lithography upper-layer film-forming composition includes (A) a polymer that includes a structural unit (I) shown by the following formula (1), and (S) a solvent. R1 in the formula (1) represents a hydrogen atom, a methyl group, or a trifluoromethyl group. The polymer (A) preferably further includes a structural unit (II) that includes a sulfo group. The polymer (A) preferably further includes a structural unit (III) shown by the following formula (3). R2 in the formula (3) represents a hydrogen atom, a methyl group, or a trifluoromethyl group. R3 represents a linear or branched monovalent hydrocarbon group having 1 to 12 carbon atoms or a monovalent alicyclic group having 3 to 20 carbon atoms, provided that at least one hydrogen atom of the hydrocarbon group or the alicyclic group is substituted with a fluorine atom.
摘要翻译：液浸光刻上层成膜组合物包含（A）包含下式（1）所示的结构单元（I）的聚合物和（S）溶剂。式（1）中的R 1表示氢原子，甲基或三氟甲基。聚合物（A）优选还包括包含磺基的结构单元（II）。聚合物（A）优选还包含由下式（3）表示的结构单元（III）。式（3）中的R 2表示氢原子，甲基或三氟甲基。 R 3表示碳原子数1〜12的直链或支链一价烃基或碳原子数3〜20的一价脂环式基，其中烃基或脂环族基中的至少一个氢原子被氟原子取代。

55. 发明申请

US20120159265A1 STORAGE APPARATUS AND CONTROL METHOD FOR STORAGE APPARATUS 有权
标题翻译：存储设备的存储设备和控制方法
公开(公告)号：US20120159265A1
公开(公告)日：2012-06-21
申请号：US13279491
申请日：2011-10-24
申请人： Satoru NISHITA , Yukio Nishimura
发明人： Satoru NISHITA , Yukio Nishimura
IPC分类号： G06F11/14
CPC分类号： G06F11/1443 , G06F11/10 , G06F11/2089 , H04L1/18
摘要： A first controller stores externally input data to a memory of the first controller, reads data stored in the memory of the first controller and transmits the data to a second controller through a first controller bridge, detects a failure at the first controller bridge in transmission of the data. The second controller receives the data through a second controller bridge, writes the received data into a memory of the second controller, and determines whether the failure is caused by the first controller if a failure occurs in the memory controller and the second controller bridge. If a failure is detected in the first controller and the second controller and the failure is caused by the first controller, the first controller transmits the data causing the failure during transmission through the first controller bridge and the second controller receives the data through the second controller bridge.
摘要翻译：第一控制器将外部输入数据存储到第一控制器的存储器中，读取存储在第一控制器的存储器中的数据，并通过第一控制器桥将数据发送到第二控制器，在第一控制器桥传输期间检测故障数据。第二控制器通过第二控制器桥接器接收数据，将接收到的数据写入第二控制器的存储器，并且如果在存储器控制器和第二控制器桥中发生故障，则确定是否由第一控制器引起故障。如果在第一控制器和第二控制器中检测到故障，并且由第一控制器引起故障，则第一控制器在通过第一控制器桥传输期间发送导致故障的数据，并且第二控制器通过第二控制器接收数据桥。

56. 发明申请

US20120065291A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND 有权
标题翻译：辐射敏感性树脂组合物，聚合物和化合物
公开(公告)号：US20120065291A1
公开(公告)日：2012-03-15
申请号：US13272523
申请日：2011-10-13
申请人： Nobuji Matsumura , Yukio Nishimura , Akimasa Soyano , Ryuichi Serizawa , Noboru Otsuka , Hiroshi Tomioka
发明人： Nobuji Matsumura , Yukio Nishimura , Akimasa Soyano , Ryuichi Serizawa , Noboru Otsuka , Hiroshi Tomioka
IPC分类号： C08F24/00 , C07C69/75 , C08F20/06 , C08F28/02 , C08L27/12 , C08F14/18
CPC分类号： G03F7/0045 , C08F220/36 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/2041 , C08F2220/382 , C08F2220/283
摘要： A radiation-sensitive resin composition includes a first polymer including a repeating unit represented by a following formula (I). X+ is an onium cation. X+ in the formula (I) is preferably an onium cation represented by a following formula (1-1), an onium cation represented by a following formula (1-2) or a combination thereof.
摘要翻译：辐射敏感性树脂组合物包括含有由下式（I）表示的重复单元的第一聚合物。 X +是阳离子。式（I）中的X +优选为由下式（1-1）表示的鎓阳离子，由下式（1-2）表示的鎓阳离子或其组合。

57. 发明授权

US08124314B2 Radiation-sensitive composition 有权
标题翻译：辐射敏感组合物
公开(公告)号：US08124314B2
公开(公告)日：2012-02-28
申请号：US12752151
申请日：2010-04-01
申请人： Yukio Nishimura , Hiromu Miyata
发明人： Yukio Nishimura , Hiromu Miyata
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/0392 , Y10S430/108 , Y10S430/111
摘要： A radiation-sensitive composition includes (A) a first polymer which becomes alkali-soluble by the action of an acid and does not contain a fluorine atom, (B) a second polymer having a repeating unit (b1) shown by the following formula (1) and a fluorine-containing repeating unit (b2), and (C) a radiation-sensitive acid generator, the content of the second polymer (B) in the composition being 0.1 to 20 parts by mass relative to 100 parts by mass of the first polymer (A). wherein R1 represents a monovalent organic group, and R8 represents a linear or branched alkyl group having 1 to 12 carbon atoms. The composition can form a resist film capable of suppressing defects inherent to liquid immersion lithography such as watermark defects and bubble defects.
摘要翻译：辐射敏感性组合物包含（A）通过酸的作用而变成碱溶性的不含氟原子的第一聚合物，（B）具有下式所示的重复单元（b1）的第二聚合物（b1） 1）和含氟重复单元（b2）和（C）辐射敏感性酸产生剂，组合物中第二聚合物（B）的含量相对于100质量份为0.1质量份第一聚合物（A）。其中R1表示一价有机基团，R8表示碳原子数为1〜12的直链或支链烷基。该组合物可以形成能够抑制液浸光刻固有的缺陷的抗蚀剂膜，例如水印缺陷和气泡缺陷。

58. 发明申请

US20100203452A1 RADIATION-SENSITIVE COMPOSITION 审中-公开
标题翻译：辐射敏感组合物
公开(公告)号：US20100203452A1
公开(公告)日：2010-08-12
申请号：US12732220
申请日：2010-03-26
申请人： Yukio Nishimura , Hiromu Miyata
发明人： Yukio Nishimura , Hiromu Miyata
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/2041
摘要： A radiation-sensitive composition includes a polymer (A) which includes a repeating unit (1) shown by the following formula (1) and a repeating unit (2) shown by the following formula (2), and a radiation-sensitive acid generator (B). wherein R1 is a methyl group, R2 is a linear or branched alkyl group having 1 to 12 carbon atoms, and R3 is a linear or branched alkyl group having 1 to 4 carbon atoms, and n is an integer from 1 to 5. The composition is useful as a chemically-amplified resist having excellent resolution performance and exhibiting low LWR, low PEB temperature dependency, excellent pattern collapse resistance, and low defect-incurring properties.
摘要翻译：辐射敏感性组合物包括聚合物（A），其包含由下式（1）表示的重复单元（1）和由下式（2）表示的重复单元（2），和辐射敏感性酸发生剂（B）。其中R1为甲基，R2为碳原子数1〜12的直链或支链烷基，R3为碳原子数1〜4的直链或支链烷基，n为1〜5的整数。可用作具有优异的分辨率性能并且具有低LWR，低PEB温度依赖性，优异的图案抗塌陷性和低缺陷引发性能的化学增幅抗蚀剂。

59. 发明申请

US20070269734A1 Uper Layer Film Forming Composition for Liquid Immersion and Method of Forming Photoresist Pattern 有权
标题翻译：用于液体浸渍的Uper层成膜组合物和形成光刻胶图案的方法
公开(公告)号：US20070269734A1
公开(公告)日：2007-11-22
申请号：US10586187
申请日：2005-01-14
申请人： Toru Kimura , Yukio Nishimura , Tomohiro Utaka , Hiroaki Nemoto , Atsushi Nakamura , Takashi Chiba , Hiroki Nakagawa
发明人： Toru Kimura , Yukio Nishimura , Tomohiro Utaka , Hiroaki Nemoto , Atsushi Nakamura , Takashi Chiba , Hiroki Nakagawa
IPC分类号： G03F7/20 , G03F7/11 , H01L21/027
CPC分类号： G03F7/2041 , C08F214/182 , C08F214/186 , C08F216/10 , C08F220/18 , C08F220/24 , G03F7/11 , C08F220/06 , C08F2222/1013
摘要： An immersion upper layer film composition is provided which exhibits sufficient transparency for the exposure wavelength 248 nm(KrF) and 193 nm(ArF), can form a protective film on the photoresist film without being intermixed with the photoresist film, is not eluted into water used during immersion exposure to maintain a stable film, and can be easily dissolved in an alkaline developer. The composition applied to coat on the photoresist film when using an immersion exposure device which is irradiated through water provided between a lens and the photoresist film, the composition comprises a resin forming a water-stable film during irradiation and being dissolved in a subsequent developer, and a solvent containing a monovalent alcohol having 6 or less carbon atoms, and the resin contains a resin component having an alcoholic hydroxyl group on the side chain containing a fluoroalkyl group on at least the carbon atom of α-position.
摘要翻译：提供了对于曝光波长248nm（KrF）和193nm（ArF）显示足够的透明度的浸没上层膜组合物，可以在光致抗蚀剂膜上形成保护膜而不与光致抗蚀剂膜混合，不会被洗脱到水中在浸渍曝光期间使用以保持稳定的膜，并且可以容易地溶解在碱性显影剂中。当使用通过设置在透镜和光致抗蚀剂膜之间的水照射的浸没曝光装置时，该组合物涂覆在光致抗蚀剂膜上，该组合物包含在照射期间形成水稳定膜并溶解在随后的显影剂中的树脂，和含有6个以下碳原子的一元醇的溶剂，该树脂含有至少在α-位的碳原子上在侧链上含有氟烷基的具有醇羟基的树脂成分。

60. 发明授权

US07217492B2 Onium salt compound and radiation-sensitive resin composition 有权
标题翻译： ium盐化合物和辐射敏感性树脂组合物
公开(公告)号：US07217492B2
公开(公告)日：2007-05-15
申请号：US10743809
申请日：2003-12-24
申请人： Eiji Yoneda , Yong Wang , Yukio Nishimura
发明人： Eiji Yoneda , Yong Wang , Yukio Nishimura
IPC分类号： G03F7/038 , G03F7/039 , C07C303/00 , C07C307/00 , C07C315/00
CPC分类号： C07D317/72 , C07C317/14 , C07C381/12 , C07C2601/14 , C07C2602/42 , C07D319/08 , C07D333/46 , G03F7/0045 , G03F7/0392 , G03F7/0757 , Y10S430/115 , Y10S430/122
摘要： An onium salt compound having a cation moiety of the following formula (1) is disclosed. wherein A represents I or S, m is 1 or 2, n is 0 or 1, x is 1–10, and Ar1 and Ar2 are (substituted) aromatic hydrocarbon group, and P represents —O—SO2R, —O—S(O)R, or —SO2R, wherein R represents a hydrogen atom, a (substituted) alkyl group, or a (substituted) alicyclic hydrocarbon group. The onium salt compound is suitable as a photoacid generator for photoresists of a positive-tone radiation-sensitive resin composition. The positive-tone radiation-sensitive resin composition containing this compound is useful as a chemically-amplified photoresist exhibiting high resolution at high sensitivity, responsive to various radiations, and having outstanding storage stability.
摘要翻译：公开了具有下式（1）的阳离子部分的鎓盐化合物。其中A表示I或S，m为1或2，n为0或1，x为1-10，Ar 1和Ar 2为（取代的）芳族烃基，P为-O-SO 2，（O）R或-SO 2 R，其中R表示氢原子，（取代的）烷基或（取代的）脂环族烃基。鎓盐化合物适合作为正色散辐射敏感性树脂组合物的光致抗蚀剂的光致酸发生剂。含有该化合物的正色散辐射敏感性树脂组合物可用作高灵敏度的高分辨率的化学扩增光致抗蚀剂，对各种辐射有响应，并且具有优异的储存稳定性。

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