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51. 发明申请

US20120008229A1 Magnetic core plasmon antenna with improved coupling efficiency 有权
标题翻译：具有改善耦合效率的磁芯等离子体天线
公开(公告)号：US20120008229A1
公开(公告)日：2012-01-12
申请号：US12803874
申请日：2010-07-08
申请人： Yuchen Zhou , Tobias Maletzky , Xuhui Jin , Zhigang Bai , Kenichi Takano , Erhard Schreck
发明人： Yuchen Zhou , Tobias Maletzky , Xuhui Jin , Zhigang Bai , Kenichi Takano , Erhard Schreck
IPC分类号： G11B5/02 , G11B5/127
CPC分类号： G11B5/314 , B82Y20/00 , G02B6/1226 , G11B5/3163 , G11B5/6088 , G11B2005/0021
摘要： A TAMR (Thermal Assisted Magnetic Recording) write head uses the energy of optical-laser generated plasmons in a magnetic core plasmon antenna to locally heat a magnetic recording medium and reduce its coercivity and magnetic anisotropy. To enable the TAMR head to operate most effectively, the maximum gradient and value of the magnetic recording field should be at a point of the magnetic medium that is as close as possible to the point being heated. In addition, the coupling between the optical mode and the plasmon mode should be efficient so that maximum energy is transmitted to the medium. The present invention achieves both these objects by surrounding the magnetic core of a plasmon antenna by a variable thickness plasmon generating layer, whose thinnest and shortest portion is at the ABS end of the TAMR head and whose thickest and longest portion efficiently couples to the optical mode of a waveguide to produce a plasmon.
摘要翻译： TAMR（热辅助磁记录）写头使用磁芯等离子体天线中的激光产生的等离子体激元的能量来局部加热磁记录介质并降低其矫顽力和磁各向异性。为了使TAMR头能够最有效地运行，磁记录场的最大梯度和值应当在尽可能接近被加热点的磁介质的一个点处。另外，光模式和等离子体激元模式之间的耦合应该是有效的，从而将最大能量传输到介质。本发明通过可变厚度等离子体发生层围绕等离子体激元天线的磁芯来实现这两个目的，其最薄和最短部分在TAMR头的ABS端，并且其最厚和最长部分有效地耦合到光学模式的波导产生等离子体激元。

52. 发明申请

US20060196039A1 Novel abutted exchange bias design for sensor stabilization 失效
标题翻译：传感器稳定的新型对接交换偏置设计
公开(公告)号：US20060196039A1
公开(公告)日：2006-09-07
申请号：US11074244
申请日：2005-03-04
申请人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
发明人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048
摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.
摘要翻译：用于偏置磁读头内的MR传感器中的自由层的硬偏置（HB）结构包括具有大的负磁致伸缩（λS S S S S）值的主偏置层。研磨后装置中的压缩应力引起强的面内各向异性，其有效地提供纵向偏压以稳定传感器。主偏置层形成在两个FM层之间，并且至少一个AFM层设置在上FM层上方或下FM层的下方。另外，可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。与传统的邻接结交换偏置设计相比，本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度，并显着降低旁瓣发生。此外，由于主偏置层用作侧屏蔽，所以实现了具有相似轨道宽度的较小MRWu。

53. 发明授权

US07275304B2 Method of forming a hard bias structure in a magnetic head 失效
标题翻译：在磁头中形成硬偏置结构的方法
公开(公告)号：US07275304B2
公开(公告)日：2007-10-02
申请号：US11074244
申请日：2005-03-04
申请人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
发明人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048
摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.
摘要翻译：用于偏置磁读头内的MR传感器中的自由层的硬偏置（HB）结构包括具有大的负磁致伸缩（λS S S S S）值的主偏置层。研磨后装置中的压缩应力引起强的面内各向异性，其有效地提供纵向偏压以稳定传感器。主偏置层形成在两个FM层之间，并且至少一个AFM层设置在上FM层上方或下FM层的下方。另外，可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。与传统的邻接结交换偏置设计相比，本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度，并显着降低旁瓣发生。此外，由于主偏置层用作侧屏蔽，所以实现了具有相似轨道宽度的较小MRWu。

54. 发明申请

US20060198059A1 Novel abutted exchange bias design for sensor stabilization 失效
公开(公告)号：US20060198059A1
公开(公告)日：2006-09-07
申请号：US11074270
申请日：2005-03-04
申请人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
发明人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/3932
摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.

55. 发明授权

US07283337B2 Abutted exchange bias design for sensor stabilization 失效
标题翻译：传感器稳定的基准交换偏置设计
公开(公告)号：US07283337B2
公开(公告)日：2007-10-16
申请号：US11074270
申请日：2005-03-04
申请人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
发明人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
IPC分类号： G11B5/127
CPC分类号： G11B5/3932
摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.
摘要翻译：用于偏置磁读头内的MR传感器中的自由层的硬偏置（HB）结构包括具有大的负磁致伸缩（λS S S S S）值的主偏置层。研磨后装置中的压缩应力引起强的面内各向异性，其有效地提供纵向偏压以稳定传感器。主偏置层形成在两个FM层之间，并且至少一个AFM层设置在上FM层上方或下FM层的下方。另外，可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。与传统的邻接结交换偏置设计相比，本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度，并显着降低旁瓣发生。此外，由于主偏置层用作侧屏蔽，所以实现了具有相似轨道宽度的较小MRWu。

56. 发明申请

US20120155232A1 Directional waveguide coupler for ABS reflected light 有权
公开(公告)号：US20120155232A1
公开(公告)日：2012-06-21
申请号：US12928678
申请日：2010-12-16
申请人： Erhard Schreck , Tobias Maletzky , Xuhui Jin , Yuchun Zhou , Kenichi Takano , Joe Smyth
发明人： Erhard Schreck , Tobias Maletzky , Xuhui Jin , Yuchun Zhou , Kenichi Takano , Joe Smyth
IPC分类号： G11B11/00
CPC分类号： G11B5/314 , B82Y20/00 , G02B6/1226 , G02B6/125 , G02B6/2821 , G11B5/3189 , G11B2005/001 , G11B2005/0021
摘要： A waveguide structure for a TAMR head is disclosed wherein at least one detection waveguide is formed parallel to a main waveguide and located a gap distance therefrom. A light source transmits light into the main waveguide and towards an ABS/medium interface. A plasmon generator converts light from the waveguide into plasmon waves that are directed onto a magnetic medium. Back reflected light is captured by the main waveguide, partially diverted into a detection waveguide, and transmitted to a photo detector that measures light intensity (IB) which correlates closely to the plasmon wave intensity at the ABS/medium interface. A controller linked to the photo detector is employed to calculate IB as a function of ABS/medium spacing in a non-write condition and this relationship can be used to control and maintain a constant plasmon wave intensity at the ABS during a series of TAMR write processes with a plurality of media.

57. 发明申请

US20110279920A1 Main pole design for thermally assisted magnetic recording 有权
标题翻译：用于热辅助磁记录的主极设计
公开(公告)号：US20110279920A1
公开(公告)日：2011-11-17
申请号：US12800194
申请日：2010-05-11
申请人： Kenichi Takano , Joe Smyth , Erhard Schreck
发明人： Kenichi Takano , Joe Smyth , Erhard Schreck
IPC分类号： G11B5/10
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/314 , G11B2005/0021
摘要： Improved spatial resolution during TAMR has been achieved by shaping the write pole to have a lower surface that slopes away from the surface of the recording medium, starting at, or near, the pole's leading edge. The approach may be used for simple or compound (stitched) poles.
摘要翻译：通过使写入极通过成形使具有从磁极的前缘开始或接近磁极的边缘的表面离开记录介质的表面的下表面来实现TAMR期间的改进的空间分辨率。该方法可用于简单或复合（缝合）极。

58. 发明申请

US20110216447A1 Process of octagonal pole for microwave assisted magnetic recording (MAMR) writer 有权
标题翻译：微波辅助磁记录（MAMR）作者八角极的过程
公开(公告)号：US20110216447A1
公开(公告)日：2011-09-08
申请号：US12660819
申请日：2010-03-03
申请人： Min Li , Cherng-Chyi Han , Kenichi Takano , Joe Smyth
发明人： Min Li , Cherng-Chyi Han , Kenichi Takano , Joe Smyth
IPC分类号： G11B5/33 , G03F7/20
CPC分类号： G11B5/314 , G11B5/1278 , G11B2005/0024
摘要： A microwave assisted magnetic recording writer is disclosed with an octagonal write pole having a top portion including a trailing edge that is self aligned to a spin transfer oscillator (STO). Leading and trailing edges are connected by two sidewalls each having three sections. A first section on each side is coplanar with the STO sidewalls and is connected to a sloped second section at a first corner. Each second section is connected to a third section at a second corner where the distance between second corners is greater than the distance between first corners. A method of forming the writer begins with a trapezoidal shaped write pole in an insulation layer. Two ion beam etch (IBE) steps are used to shape top and middle portions of the write pole and narrow the pole width to
摘要翻译：公开了一种具有八角写磁极的微波辅助磁记录装置，其具有包括与自旋转移振荡器（STO）自对准的后沿的顶部。前缘和后缘由具有三个部分的两个侧壁连接。每侧的第一部分与STO侧壁共面，并且在第一角处连接到倾斜的第二部分。每个第二部分连接到第二角处的第三部分，其中第二角之间的距离大于第一角之间的距离。一种形成写入器的方法从绝缘层中的梯形写入极开始。使用两个离子束蚀刻（IBE）步骤来形成写入极的顶部和中间部分，并且将极宽度窄化到<50nm而不破裂。最后，在STO上形成一个后挡板。

59. 发明授权

US08416649B2 Main pole design for thermally assisted magnetic recording 有权
标题翻译：用于热辅助磁记录的主极设计
公开(公告)号：US08416649B2
公开(公告)日：2013-04-09
申请号：US12800194
申请日：2010-05-11
申请人： Kenichi Takano , Joe Smyth , Erhard Schreck
发明人： Kenichi Takano , Joe Smyth , Erhard Schreck
IPC分类号： G11B11/00
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/314 , G11B2005/0021
摘要： Improved spatial resolution during TAMR has been achieved by shaping the write pole to have a lower surface that slopes away from the surface of the recording medium, starting at, or near, the pole's leading edge. The approach may be used for simple or compound (stitched) poles.
摘要翻译：通过使写入极通过成形使具有从磁极的前缘开始或接近磁极的边缘的表面离开记录介质的表面的下表面来实现TAMR期间的改进的空间分辨率。该方法可用于简单或复合（缝合）极。

60. 发明授权

US08305711B2 Process of octagonal pole for microwave assisted magnetic recording (MAMR) writer 有权
标题翻译：微波辅助磁记录（MAMR）作者八角极的过程
公开(公告)号：US08305711B2
公开(公告)日：2012-11-06
申请号：US12660819
申请日：2010-03-03
申请人： Min Li , Cherng-Chyi Han , Kenichi Takano , Joe Smyth
发明人： Min Li , Cherng-Chyi Han , Kenichi Takano , Joe Smyth
IPC分类号： G11B5/187 , G11B5/127 , G11B5/02
CPC分类号： G11B5/314 , G11B5/1278 , G11B2005/0024
摘要： A microwave assisted magnetic recording writer is disclosed with an octagonal write pole having a top portion including a trailing edge that is self aligned to a spin transfer oscillator (STO). Leading and trailing edges are connected by two sidewalls each having three sections. A first section on each side is coplanar with the STO sidewalls and is connected to a sloped second section at a first corner. Each second section is connected to a third section at a second corner where the distance between second corners is greater than the distance between first corners. A method of forming the writer begins with a trapezoidal shaped write pole in an insulation layer. Two ion beam etch (IBE) steps are used to shape top and middle portions of the write pole and narrow the pole width to
摘要翻译：公开了一种具有八角写磁极的微波辅助磁记录装置，其具有包括与自旋转移振荡器（STO）自对准的后沿的顶部。前缘和后缘由具有三个部分的两个侧壁连接。每侧的第一部分与STO侧壁共面，并且在第一角处连接到倾斜的第二部分。每个第二部分连接到第二角处的第三部分，其中第二角之间的距离大于第一角之间的距离。一种形成写入器的方法从绝缘层中的梯形写入极开始。使用两个离子束蚀刻（IBE）步骤来形成写入极的顶部和中间部分，并将极宽度窄化到<50nm而不会破裂。最后，在STO上形成一个后挡板。

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