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51. 发明授权

US09142226B2 Thin film with tuned grain size 有权
标题翻译：调整晶粒尺寸的薄膜
公开(公告)号：US09142226B2
公开(公告)日：2015-09-22
申请号：US13539026
申请日：2012-06-29
申请人： Venkateswara Rao Inturi , Wei Tian , Huaqing Yin , Michael C. Kautzky , Mark Thomas Kief , Meng Zhu , Eliot Lewis Cuthbert Estrine
发明人： Venkateswara Rao Inturi , Wei Tian , Huaqing Yin , Michael C. Kautzky , Mark Thomas Kief , Meng Zhu , Eliot Lewis Cuthbert Estrine
IPC分类号： G11B5/127 , H01L43/12 , G11B5/31 , H01F10/16 , H01F41/18
CPC分类号： G11B5/1278 , G11B5/3103 , G11B5/3163 , H01F10/16 , H01F41/18
摘要： An apparatus and associated method provides a magnetic writing element that may have at least a write pole tuned to a predetermined first grain size with a cryogenic substrate temperature. A magnetic shield can be formed with a predetermined second grain size that is tuned with the cryogenic substrate temperature.
摘要翻译：一种装置和相关方法提供一种磁性写入元件，该磁性写入元件至少可以用低温衬底温度调整到预定的第一晶粒尺寸的写入极。磁屏蔽可以以与低温衬底温度调节的预定的第二粒度形成。

52. 发明授权

US08922956B2 Tunneling magneto-resistive sensors with buffer layers 有权
标题翻译：隧道磁阻传感器与缓冲层
公开(公告)号：US08922956B2
公开(公告)日：2014-12-30
申请号：US13152860
申请日：2011-06-03
申请人： Bin Lu , Qing He , Mark Covington , Yunhao Xu , Wei Tian
发明人： Bin Lu , Qing He , Mark Covington , Yunhao Xu , Wei Tian
IPC分类号： G11B5/39 , G01R33/09
CPC分类号： H01L43/08 , G01R33/098 , G11B5/3909 , G11B2005/3996 , H01L43/02
摘要： In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy.In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.
摘要翻译：在某些实施例中，隧道磁阻（TMR）传感器包括位于种子层和覆盖层之间的传感器堆叠。种子层包括包含非磁性镍合金的第一缓冲层。在某些实施例中，传感器堆叠包括顶部和底部屏蔽以及邻近底部屏蔽定位的种子层。种子层具有包括镍合金的第一缓冲层。

53. 发明申请

US20140004387A1 THIN FILM WITH TUNED GRAIN SIZE 有权
标题翻译：薄膜与调整谷物尺寸
公开(公告)号：US20140004387A1
公开(公告)日：2014-01-02
申请号：US13539026
申请日：2012-06-29
申请人： Venkateswara Rao Inturi , Wei Tian , Huaqing Yin , Michael C. Kautzky , Mark Thomas Kief , Meng Zhu , Eliot Lewis Cuthbert Estrine
发明人： Venkateswara Rao Inturi , Wei Tian , Huaqing Yin , Michael C. Kautzky , Mark Thomas Kief , Meng Zhu , Eliot Lewis Cuthbert Estrine
IPC分类号： G11B5/65 , B05D5/12
CPC分类号： G11B5/1278 , G11B5/3103 , G11B5/3163 , H01F10/16 , H01F41/18
摘要： An apparatus and associated method provides a magnetic writing element that may have at least a write pole tuned to a predetermined first grain size with a cryogenic substrate temperature. A magnetic shield can be formed with a predetermined second grain size that is tuned with the cryogenic substrate temperature.
摘要翻译：一种装置和相关方法提供一种磁性写入元件，该磁性写入元件至少可以用低温衬底温度调整到预定的第一晶粒尺寸的写入极。磁屏蔽可以以与低温衬底温度调节的预定的第二粒度形成。

54. 发明授权

US08553369B2 Magnetic element with improved stability and including at least one antiferromagnetic tab 有权
标题翻译：具有改进的稳定性并且包括至少一个反铁磁性片的磁性元件
公开(公告)号：US08553369B2
公开(公告)日：2013-10-08
申请号：US12956752
申请日：2010-11-30
申请人： Dion Song , Mark William Covington , Qing He , Dimitar Velikov Dimitrov , Wei Tian , Wonjoon Jung , Sunita Bhardwaj Gangopadhyay
发明人： Dion Song , Mark William Covington , Qing He , Dimitar Velikov Dimitrov , Wei Tian , Wonjoon Jung , Sunita Bhardwaj Gangopadhyay
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B2005/3996
摘要： A magnetic element capable of detecting changes in magnetic states, such as for use as a read sensor in a data transducing head or as a solid-state non-volatile memory element. In accordance with various embodiments, the magnetic element includes a magnetically responsive stack or lamination with a first areal extent. The stack includes a spacer layer positioned between first and second ferromagnetic free layers. At least one antiferromagnetic (AFM) tab is connected to the first free layer on a surface thereof opposite the spacer layer, the AFM tab having a second areal extent that is less than the first areal extent.
摘要翻译：能够检测磁状态变化的磁性元件，例如用作数据转换头中的读取传感器或作为固态非易失性存储元件。根据各种实施例，磁性元件包括具有第一面积范围的磁响应叠层或叠层。堆叠包括位于第一和第二铁磁自由层之间的间隔层。至少一个反铁磁（AFM）接头连接到与隔离层相对的表面上的第一自由层，AFM接头具有小于第一面积范围的第二面积范围。

55. 发明申请

US20130100892A1 EVOLVED UNIVERSAL MOBILE TELECOMMUNICATION RADIO ACCESS NETWORK SYSTEM AND TASK TRACKING METHOD THEREOF 有权
标题翻译：演进通用移动电信无线接入网络系统及其任务追踪方法
公开(公告)号：US20130100892A1
公开(公告)日：2013-04-25
申请号：US13807585
申请日：2010-12-21
申请人： Wei Tian
发明人： Wei Tian
IPC分类号： H04W40/00
CPC分类号： H04W40/00 , H04W24/00 , H04W28/18 , H04W48/08 , H04W74/00
摘要： The disclosure claims an Evolved Universal Mobile Telecommunication System (UMTS) Radio Access Network (E-UTRAN) system and a task tracking method thereof. The method comprises the steps of: creating a message, which carries the parameters of multiple tasks for tracking a same user; sending the message to an Evolved NodeB (eNodeB), which is used for the eNodeB to create multiple tasks to track the user according to the parameters. The disclosure also claims an E-UTRAN system, which comprises: a creation module, configured to create a message which carries the parameters of multiple tasks for tracking a same user; a sending module, configured to send the message to the eNodeB; an eNodeB, configured to establish multiple tasks to track the user according to the parameters. The disclosure can guarantee that multiple tasks track one appointed user synchronously.
摘要翻译：本发明要求演进的通用移动电信系统（UMTS）无线电接入网络（E-UTRAN）系统及其任务跟踪方法。该方法包括以下步骤：创建一个消息，该消息携带用于跟踪同一用户的多个任务的参数; 将消息发送到演进节点B（eNodeB），其用于eNodeB，以根据参数创建多个任务来跟踪用户。本公开还要求一种E-UTRAN系统，其包括：创建模块，被配置为创建携带用于跟踪相同用户的多个任务的参数的消息; 发送模块，被配置为将所述消息发送到所述eNodeB; eNodeB，被配置为根据参数建立多个任务来跟踪用户。本公开可以保证多个任务同步跟踪一个指定的用户。

56. 发明授权

US08367464B2 Nano-dimensional non-volatile memory cells 有权
标题翻译：纳米级非易失性存储单元
公开(公告)号：US08367464B2
公开(公告)日：2013-02-05
申请号：US13209809
申请日：2011-08-15
申请人： Venugopalan Vaithyanathan , Wei Tian , Insik Jin
发明人： Venugopalan Vaithyanathan , Wei Tian , Insik Jin
IPC分类号： H01L21/00
CPC分类号： H01L45/1233 , H01L27/2463 , H01L27/2472 , H01L45/085 , H01L45/141 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1641 , H01L45/1675
摘要： A non-volatile memory cell that includes a first electrode; a second electrode; and an electrical contact region that electrically connects the first electrode and the second electrode, the electrical contact region has a end portion and a continuous side portion, and together, the end portion and the continuous side portion form an open cavity, wherein the memory cell has a high resistance state and a low resistance state that can be switched by applying a voltage across the first electrode and the second electrode.
摘要翻译：一种包括第一电极的非易失性存储单元; 第二电极; 以及电接触区域，其电连接所述第一电极和所述第二电极，所述电接触区域具有端部和连续侧部，并且所述端部和所述连续侧部一起形成开放空腔，其中所述存储单元具有可以通过在第一电极和第二电极两端施加电压来切换的高电阻状态和低电阻状态。

57. 发明授权

US08227783B2 Non-volatile resistive sense memory with praseodymium calcium manganese oxide 有权
标题翻译：具有镨钙锰氧化物的非易失性电阻检测记忆体
公开(公告)号：US08227783B2
公开(公告)日：2012-07-24
申请号：US12501533
申请日：2009-07-13
申请人： Andreas Roelofs , Markus Siegert , Venugopalan Vaithyanathan , Wei Tian , Yongchul Ahn , Muralikrishnan Balakrishnan , Olle Heinonen
发明人： Andreas Roelofs , Markus Siegert , Venugopalan Vaithyanathan , Wei Tian , Yongchul Ahn , Muralikrishnan Balakrishnan , Olle Heinonen
IPC分类号： H01L29/02
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/51 , G11C2213/56 , G11C2213/77 , G11C2213/79 , H01L27/101 , H01L27/2436 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/147 , H01L45/1608
摘要： A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.
摘要翻译：电阻式感测存储单元包括一层结晶的镨钙锰氧化物和一层无定形的镨钙锰氧化物，其设置在形成电阻式感测存储堆的结晶镨钙锰氧化物层上。第一和第二电极由电阻式感测存储器堆分隔开。电阻式感测存储单元还可以包括从无定形镨钙锰氧化物层的层分离结晶镨钙锰氧化物层的氧扩散阻挡层。方法包括沉积形成电阻式感测存储器叠层的结晶镨钙锰氧化物层上的无定形镨钙锰氧化物。

58. 发明申请

US20120153400A1 TUNNELING TRANSISTORS 有权
标题翻译：隧道晶体管
公开(公告)号：US20120153400A1
公开(公告)日：2012-06-21
申请号：US12971393
申请日：2010-12-17
申请人： Insik Jin , Wei Tian , Venugopalan Vaithyanathan , Cedric Bedoya , Markus Siegert
发明人： Insik Jin , Wei Tian , Venugopalan Vaithyanathan , Cedric Bedoya , Markus Siegert
IPC分类号： H01L27/11 , H01L29/78
CPC分类号： H01L27/115 , B82Y10/00 , H01L29/66977
摘要： A transistor including a source; a drain; a gate region, the gate region including a gate; an island; and a gate oxide, wherein the gate oxide is positioned between the gate and the island; and the gate and island are coactively coupled to each other; and a source barrier and a drain barrier, wherein the source barrier separates the source from the gate region and the drain barrier separates the drain from the gate region.
摘要翻译：一种晶体管，包括一个源极; 排水栅极区域，所述栅极区域包括栅极; 一个岛屿; 和栅极氧化物，其中所述栅极氧化物位于所述栅极和岛之间; 门和岛彼此共同耦合; 源极屏障和漏极阻挡层，其中源极栅极将源极与栅极区域隔离，并且漏极栅极将漏极与栅极区域分离。

59. 发明申请

US20120149183A1 SCHOTTKY DIODE SWITCH AND MEMORY UNITS CONTAINING THE SAME 有权
标题翻译：肖特基二极管开关和包含该开关的记忆单元
公开(公告)号：US20120149183A1
公开(公告)日：2012-06-14
申请号：US13400364
申请日：2012-02-20
申请人： Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
发明人： Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
IPC分类号： H01L21/329
CPC分类号： H01L27/0814 , G11C11/161 , G11C11/1659 , G11C13/0002 , H01L21/84 , H01L27/0688 , H01L27/101 , H01L27/1021 , H01L27/11507 , H01L27/1203 , H01L27/224 , H01L27/2409 , H01L29/66143 , H01L29/66212 , H01L29/872 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/14 , H01L45/143 , H01L45/146 , H01L45/147
摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.
摘要翻译：一种开关元件，包括第一半导体层，所述第一半导体层具有第一部分和第二部分; 第二半导体层，所述第二半导体层具有第一部分和第二部分; 设置在所述第一半导体层和所述第二半导体层之间的绝缘层; 与所述第一半导体层的所述第一部分接触的第一金属接触形成第一结，并与所述第二半导体层的所述第一部分接触形成第二结; 第二金属触点与第一半导体层的第二部分接触形成第三结，并与第二半导体层的第二部分接触形成第四结，其中第一结和第四结是肖特基接触，第二结和第三结是欧姆接触。

60. 发明申请

US20120145489A1 MACHINE-ROOM-LESS ELEVATOR SYSTEM AND METHOD THEREOF 审中-公开
标题翻译：无机房电梯系统及其方法
公开(公告)号：US20120145489A1
公开(公告)日：2012-06-14
申请号：US13378148
申请日：2010-06-16
申请人： Wei Tian , Ashur William Kanon
发明人： Wei Tian , Ashur William Kanon
IPC分类号： B66B11/00
CPC分类号： B66B19/005 , B66B11/0045
摘要： The present general inventive concept provides an elevator system and method that provides minimal vibration during use thereof, simplified installation and maintenance, and a machine to power the system supported by a machine-support structure mounted between counterweight guide rails.
摘要翻译：本发明的总体构思提供了一种电梯系统和方法，其在使用期间提供最小的振动，简化的安装和维护，以及为安装在配重导轨之间的机器支撑结构支撑的系统供电的机器。

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