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    • 54. 发明授权
    • Shower head structure
    • 淋浴头结构
    • US06622945B1
    • 2003-09-23
    • US10374204
    • 2003-02-27
    • James WuLen Gen Yan
    • James WuLen Gen Yan
    • A62C3100
    • B05B1/1654
    • A shower head structure, comprising a body, a front housing, a push button, a water guide member, a flow switch disk, a first water outlet panel, a second water outlet panel, and a third water outlet panel. Thus, the user can operate the push button by his one hand only, so as to switch and adjust the water flow, thereby facilitating the user switching and adjusting the water flow of the shower head. In addition, the user can press the push button to switch and adjust the water flow through the first water outlet panel, the second water outlet panel and the third water outlet panel, thereby enhancing the versatility of the shower head.
    • 一种淋浴头结构,包括主体,前壳体,按钮,导水构件,流量开关盘,第一出水口面板,第二出水口面板和第三出水口面板。 因此,用户只能用一只手来操作按钮,以便切换和调节水流,从而便于用户切换和调节淋浴头的水流。 此外,用户可以按压按钮来切换和调节通过第一出水口面板,第二出水口面板和第三出水口面板的水流,从而增强淋浴喷头的通用性。
    • 56. 发明授权
    • Capacitor structure for a dynamic random access memory cell
    • 动态随机存取存储单元的电容结构
    • US6027969A
    • 2000-02-22
    • US090497
    • 1998-06-04
    • Kuo Ching HuangJames Wu
    • Kuo Ching HuangJames Wu
    • H01L21/8242H01L27/108
    • H01L27/10852H01L27/10817
    • A method for increasing the surface area, and thus the capacitance of a DRAM, stacked capacitor structure, has been developed. A storage node electrode, incorporating branches of polysilicon, is created via use of multiple polysilicon and insulator depositions, as well as via the use of dry anisotropic, and wet isotropic, etching procedures. The use of polysilicon spacers, created on the sides of silicon oxide mesas, adds a vertical component to the polysilicon branches. Removal of a portion of insulator layer from between polysilicon branches, results in exposure of the increased storage node electrode surface area. Unetched portions of the insulator layers, between polysilicon branches, supply structural support for the storage node electrode, comprised of polysilicon branches.
    • 已经开发了用于增加DRAM层叠电容器结构的表面积以及因此增加电容的方法。 通过使用多个多晶硅和绝缘体沉积,以及通过使用干各向异性和湿各向同性的蚀刻工艺,创建了包含多晶硅分支的存储节点电极。 在硅氧化物台面的侧面产生的多晶硅间隔物的使用增加了多晶硅分支的垂直分量。 从多晶硅分支之间去除绝缘体层的一部分导致增加的存储节点电极表面积的暴露。 在多晶硅分支之间的绝缘体层的未蚀刻部分为存储节点电极提供由多晶硅分支组成的结构支撑。