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51. 发明申请

US20090135875A1 SEMICONDUCTOR LASER AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体激光器及其制造方法
公开(公告)号：US20090135875A1
公开(公告)日：2009-05-28
申请号：US12065991
申请日：2007-07-09
申请人： Daisuke Ueda , Masaaki Yuri , Yoshiaki Hasegawa , Kenichi Matsuda
发明人： Daisuke Ueda , Masaaki Yuri , Yoshiaki Hasegawa , Kenichi Matsuda
IPC分类号： H01S5/20 , H01L21/02 , H01L31/14
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/162 , H01S5/2009 , H01S5/2201 , H01S5/305 , H01S5/3063 , H01S5/3404
摘要： A semiconductor laser (101) includes a first cladding layer (103), an active layer (105) and a second cladding layer (108). A window region (115) including fluorine, that is, an impurity element with higher electronegativity than nitrogen, is formed in the vicinity of a front end face (113) and a rear end face (114) of a laser resonator. The window region (115) is formed by exposing the front end face (113) and the rear end face (114) to carbon fluoride (CF4) plasma. The effective band gap of a portion of the active layer (105) disposed in the window region (115) is larger than the effective band gap of another portion of the active layer, and hence, it functions as an end face window structure for suppressing COD.
摘要翻译：半导体激光器（101）包括第一包层（103），有源层（105）和第二覆层（108）。在激光谐振器的前端面（113）和后端面（114）附近形成有包含氟（即，具有比氮更高的电负性的杂质元素）的窗口区域（115）。窗口区域115通过将前端面113和后端面114暴露于氟化碳（CF4）等离子体而形成。布置在窗口区域（115）中的有源层（105）的一部分的有效带隙大于有源层的另一部分的有效带隙，因此，其用作用于抑制 COD。

52. 发明授权

US07407421B2 Light source, optical pickup, and electronic apparatus 有权
标题翻译：光源，光学拾取器和电子设备
公开(公告)号：US07407421B2
公开(公告)日：2008-08-05
申请号：US10993812
申请日：2004-11-19
申请人： Isao Kidoguchi , Yasuo Kitaoka , Hiroyoshi Yajima , Keiji Ito , Akihiko Ishibashi , Yoshiaki Hasegawa , Kiminori Mizuuchi
发明人： Isao Kidoguchi , Yasuo Kitaoka , Hiroyoshi Yajima , Keiji Ito , Akihiko Ishibashi , Yoshiaki Hasegawa , Kiminori Mizuuchi
IPC分类号： H01J9/00 , H01L29/04
CPC分类号： H01S5/02204 , H01S5/02212 , H01S5/02296
摘要： A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device.
摘要翻译：本发明的光源包括：具有发光面并从发光面的一部分发光的半导体发光器件; 容器，其具有用于传输光的透光窗并容纳半导体发光器件; 以及用于吸收含有至少一种碳和硅的材料的吸气部分。吸气部位于容器内，位于半导体发光元件的发光面以外的区域。

53. 发明授权

US07160748B2 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device 有权
标题翻译：氮化物半导体的制造方法，氮化物半导体器件的制造方法以及氮化物半导体器件
公开(公告)号：US07160748B2
公开(公告)日：2007-01-09
申请号：US11063533
申请日：2005-02-24
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/0265 , H01L33/32 , H01S5/22 , H01S5/3063 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.
摘要翻译：本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

54. 发明授权

US07005680B2 Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members 失效
标题翻译：半导体发光器件包括具有多个间隔开的导电部件的分割电极
公开(公告)号：US07005680B2
公开(公告)日：2006-02-28
申请号：US10681443
申请日：2003-10-07
申请人： Nobuyuki Otsuka , Yoshiaki Hasegawa , Gaku Sugahara , Yasutoshi Kawaguchi
发明人： Nobuyuki Otsuka , Yoshiaki Hasegawa , Gaku Sugahara , Yasutoshi Kawaguchi
IPC分类号： H01L33/00
CPC分类号： H01S5/0425 , H01L27/15 , H01S5/0422 , H01S5/0625 , H01S5/0658
摘要： The semiconductor light-emitting device of the present invention includes a first semiconductor layer of a first conductivity type formed substantially in a uniform thickness on a substrate and a second semiconductor layer of a second conductivity type formed substantially in a uniform thickness on the first semiconductor layer. The device further includes an active layer, formed substantially in a uniform thickness between the first semiconductor layer and the second semiconductor layer, for generating emission light. The device also comprises a first electrode for supplying a drive current to the first semiconductor layer and a second electrode for supplying a drive current to the second semiconductor layer. The device is adapted that the first or second electrode is a divided electrode comprising a plurality of conductive members spaced apart from each other.
摘要翻译：本发明的半导体发光器件包括在基板上基本上形成为均匀厚度的第一导电类型的第一半导体层和在第一半导体层上形成为基本上均匀厚度的第二导电类型的第二半导体层。该器件还包括在第一半导体层和第二半导体层之间基本上以均匀厚度形成的有源层，用于产生发射光。该器件还包括用于向第一半导体层提供驱动电流的第一电极和用于向第二半导体层提供驱动电流的第二电极。该装置适于使第一或第二电极是包括彼此间隔开的多个导电构件的分割电极。

55. 发明授权

US06940100B2 Group III-V nitride semiconductor light-emitting device which allows for efficient injection of electrons into an active layer 有权
标题翻译： III-V族氮化物半导体发光器件，其允许有效地将电子注入有源层
公开(公告)号：US06940100B2
公开(公告)日：2005-09-06
申请号：US10335924
申请日：2003-01-03
申请人： Ayumu Tsujimura , Yoshiaki Hasegawa , Akihiko Ishibashi , Isao Kidoguchi , Yuzaburo Ban , Masakatsu Suzuki
发明人： Ayumu Tsujimura , Yoshiaki Hasegawa , Akihiko Ishibashi , Isao Kidoguchi , Yuzaburo Ban , Masakatsu Suzuki
IPC分类号： H01L33/06 , H01L33/32 , H01S5/02 , H01S5/223 , H01S5/32 , H01S5/343 , H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/0213 , H01S5/2231 , H01S5/3201 , H01S5/34333 , H01S5/34346
摘要： A semiconductor light-emitting device of Group III-V compound semiconductors includes a quantum well layer, which is formed over a substrate and includes a barrier layer and a well layer that are alternately stacked one upon the other. The band gap of the well layer is narrower than that of the barrier layer. The well layer contains indium and nitrogen, while the barrier layer contains aluminum and nitrogen. In this structure, a tensile strain is induced in the barrier layer, and therefore, a compressive strain induced in the quantum well layer can be reduced. As a result, a critical thickness, at which pits are created, can be increased.
摘要翻译： III-V族化合物半导体的半导体发光元件包括量子阱层，该量子阱层形成在衬底上并且包括彼此交替堆叠的势垒层和阱层。阱层的带隙比阻挡层的带隙窄。阱层包含铟和氮，而阻挡层含有铝和氮。在该结构中，在阻挡层中产生拉伸应变，因此能够降低在量子阱层中产生的压缩应变。因此，可以增加产生凹坑的临界厚度。

56. 发明授权

US06434591B1 Thread control system and method in a computer system 有权
标题翻译：线程控制系统和计算机系统中的方法
公开(公告)号：US06434591B1
公开(公告)日：2002-08-13
申请号：US09334949
申请日：1999-06-17
申请人： Takeshi Watakabe , Yoshiaki Hasegawa
发明人： Takeshi Watakabe , Yoshiaki Hasegawa
IPC分类号： G06F900
CPC分类号： G06F9/4843 , G06F11/3409 , G06F2201/81 , G06F2201/86 , G06F2201/88
摘要： The executing threads in CPU 100˜103 are checked at random intervals in a specified range by interrupt execution modules 109˜112, the results of the checks are stored in executing thread memory areas 113˜116 and values of counters 117-120 that are corresponding to the executing threads are incremented. If the values of the counters 117˜120 exceed specified values, applicable threads are judged to be operating abnormally and priorities of the applicable threads are lowered so as to prevent the abnormal operations of the threads.
摘要翻译：通过中断执行模块109〜112以指定范围的随机间隔检查CPU100〜103中的执行线程，将检查结果存储在执行线程存储器区域113〜116和对应的计数器117-120的值执行线程增加。如果计数器117〜120的值超过规定值，则认为适用螺纹异常运转，降低适用螺纹的优先级，以防止螺纹的异常运转。

57. 发明授权

US08437376B2 Nitride semiconductor light-emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08437376B2
公开(公告)日：2013-05-07
申请号：US13294682
申请日：2011-11-11
申请人： Shinji Yoshida , Kenji Orita , Yoshiaki Hasegawa , Atsunori Mochida
发明人： Shinji Yoshida , Kenji Orita , Yoshiaki Hasegawa , Atsunori Mochida
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , H01S5/0281 , H01S5/0283
摘要： A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 μm−1 or less.
摘要翻译：氮化物半导体器件包括由III族氮化物半导体制成并具有发光小面的多层半导体结构，以及形成为覆盖多层半导体结构的发光面的第一涂膜。第一涂膜是由含有铝的氮化物制成的结晶膜。结晶膜由一组单畴构成，单畴由一组晶体构成，晶粒取向面具有相同的倾斜角度和相同的旋转角度。单位面积域之间的边界长度为7mum-1以下。

58. 发明申请

US20130024034A1 ELECTRICAL QUANTITY ADJUSTING APPARATUS, ELECTRICAL QUANTITY ADJUSTING METHOD, ELECTRICAL QUANTITY ADJUSTING PROGRAM AND POWER SUPPLY SYSTEM 有权
标题翻译：电量调整装置，电量调整方法，电量调整程序和电源系统
公开(公告)号：US20130024034A1
公开(公告)日：2013-01-24
申请号：US13552023
申请日：2012-07-18
申请人： Yutaka IINO , Kyosuke Katayama , Yoshiaki Hasegawa
发明人： Yutaka IINO , Kyosuke Katayama , Yoshiaki Hasegawa
IPC分类号： G06F1/26
CPC分类号： H02J3/383 , H02J3/386 , Y02E10/563 , Y02E10/763
摘要： According to one embodiment, an electrical quantity adjusting apparatus connected to an electrical facility includes a memory unit that stores a target level which is a target electrical quantity, a presenting level deciding unit that decides a presenting level to an exterior, the presenting level being an electrical quantity relating to the electrical facility and corresponding to at least a part at the target level, a presenting level output unit that outputs the presenting level decided by the presenting level deciding unit to the exterior via a communication network, a presenting level receiving unit that receives a presenting level from the exterior via the communication network, and an adjusting unit that adjusts the electrical quantity relating to the electrical facility based on the target level, the presenting level decided by the presenting level deciding unit, and the presenting level received by the presenting level receiving unit.
摘要翻译：根据一个实施例，连接到电气设施的电量调节装置包括存储作为目标电量的目标电平的存储单元，将外部电平决定呈现电平的呈现电平决定单元，呈现电平为与电气设施相关的电量对应于目标电平的至少一部分;呈现电平输出单元，其经由通信网络将呈现电平决定单元决定的呈现电平输出到外部，呈现电平接收单元，经由通信网络从外部接收呈现级别，以及调整单元，其基于目标级别调整与电气设施相关的电量，由呈现级别决定单元确定的呈现级别和由所述呈现级别接收的呈现级别呈现级别接收单元。

59. 发明申请

US20110176568A1 NITRIDE SEMICONDUCTOR LASER DIODE 审中-公开
标题翻译：氮化物半导体激光二极管
公开(公告)号：US20110176568A1
公开(公告)日：2011-07-21
申请号：US12948152
申请日：2010-11-17
申请人： Tomoya Satoh , Tatsuya Nakamori , Takahiro Okaguchi , Toru Takayama , Yoshiaki Hasegawa
发明人： Tomoya Satoh , Tatsuya Nakamori , Takahiro Okaguchi , Toru Takayama , Yoshiaki Hasegawa
IPC分类号： H01S5/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0655 , H01S5/2022 , H01S5/22
摘要： A nitride semiconductor laser diode includes a second conductive cladding layer formed on an active layer, and including a ridge portion having a raised cross-sectional shape, and flat portions located on both sides of the ridge portion; a light-absorbing layer formed on each of the flat portions, and having an optical absorption coefficient larger than the second conductive cladding layer. The light-absorbing layer includes a first region provided at a side of a light-emitting facet, and having a distance Di1 from a line-symmetric axis in a longitudinal direction of the ridge portion to a side surface of the light-absorbing layer; and a second region provided at a side opposite to the light-emitting facet, and having a distance Di2 from the line-symmetric axis to the side surface of the light-absorbing layer. A relationship between the Di1 and the Di2 is represented by Di1
摘要翻译：氮化物半导体激光二极管包括形成在有源层上的第二导电覆层，包括具有凸起截面形状的脊部和位于脊部两侧的平坦部分; 形成在每个平坦部分上并且具有大于第二导电包覆层的光吸收系数的光吸收层。光吸收层包括设置在发光小面一侧的第一区域，并且在脊部的纵向方向上与线吸收层的侧表面之间具有距线对称轴的距离Di1; 以及第二区域，设置在与所述发光小面相对的一侧，并且具有距离所述线对称轴线与所述光吸收层的侧表面的距离Di2。 Di1和Di2之间的关系由Di1

60. 发明授权

US07366508B2 Radio access point testing method and testing apparatus 有权
标题翻译：无线接入点测试方法和测试仪器
公开(公告)号：US07366508B2
公开(公告)日：2008-04-29
申请号：US10910583
申请日：2004-08-04
申请人： Yoshiaki Hasegawa , Shinya Oota , Yoshihiro Kanomata , Arata Nakagoshi
发明人： Yoshiaki Hasegawa , Shinya Oota , Yoshihiro Kanomata , Arata Nakagoshi
IPC分类号： H04Q7/20
CPC分类号： H04W24/06 , H04W24/00
摘要： The normality verification and radio characteristics test of a radio communication system are executed. RF-SWs (radio-frequency coaxial switches) change-over the paths of signals which are transmitted to and received from an access terminal function portion included in an access point. RF-SWs connect the access terminal function portion 122 with a desired one of radio analog portions. A test function controller controls the changeover operations of the RF-SWs in accordance with information designated by a maintenance apparatus (OMC). An access point controller controls in accordance with received test soil information, one or more of (1) an antenna failure test in which a voltage surface wave ratio is evaluated on the basis of the transmission power of the access terminal function portion, (2) a receiver failure test in which, after a packet error rate has been adjusted, a reception sensitivity is evaluated based on the transmission power of the access terminal function portion, and (3) a transmitter failure test in which transmission power from any of the radio analog portions is evaluated based on the reception power value of the access terminal function portion.
摘要翻译：执行无线电通信系统的正常验证和无线电特性测试。 RF-SW（射频同轴交换机）转换发送到包括在接入点中的接入终端功能部分并从其接收的信号的路径。 RF-SW将接入终端功能部分122与期望的无线电模拟部分连接。测试功能控制器根据由维护设备（OMC）指定的信息来控制RF-SW的切换操作。接入点控制器根据所接收的测试土壤信息来控制（1）基于接入终端功能部分的发射功率来评估电压面波比的天线故障测试中的一个或多个，（2）接收机故障测试，其中在分组错误率被调整之后，基于接入终端功能部分的发送功率来评估接收灵敏度，以及（3）发射机故障测试，其中来自任何无线电的发射功率基于接入终端功能部分的接收功率值来评估模拟部分。

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