专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US09275837B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09275837B2
公开(公告)日：2016-03-01
申请号：US12951380
申请日：2010-11-22
申请人： Yohei Yamazawa , Naoki Matsumoto , Masahide Iwasaki , Naohiko Okunishi
发明人： Yohei Yamazawa , Naoki Matsumoto , Masahide Iwasaki , Naohiko Okunishi
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32522 , H05H1/46
摘要： A parallel resonance frequency can be adjusted in order to stably and securely block different high frequency noises flowing into a line such as a power feed line or a signal line from electric members including a high frequency electrode within a processing chamber. A filter 102(1) coaxially accommodates a coil 104(1) within a cylindrical outer conductor 110, and a ring member 122 is coaxially installed between the coil 104(1) and the outer conductor 110. The ring-shaped member 122 may be a plate body of a circular ring shape on a plane orthogonal to an axial direction of the outer conductor 110 and made of a conductor such as cupper or aluminum and electrically connected with the outer conductor 110 while electrically insulated from the coil 104(1).
摘要翻译：可以调节并联谐振频率，以便稳定且可靠地阻止流入来自包括处理室内的高频电极的电气部件的馈电线或信号线的线路的不同高频噪声。过滤器102（1）在圆柱形外部导体110内同轴地容纳线圈104（1），并且环形构件122同轴地安装在线圈104（1）和外部导体110之间。环形构件122可以是在与外导体110的轴向正交的平面上并且由诸如铜或铝的导体制成并且与外导体110电连接并且与线圈104（1）电绝缘的平板体。

52. 发明授权

US08398815B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08398815B2
公开(公告)日：2013-03-19
申请号：US12271461
申请日：2008-11-14
申请人： Yohei Yamazawa , Naohiko Okunishi
发明人： Yohei Yamazawa , Naohiko Okunishi
IPC分类号： C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/32174 , H01J37/32724
摘要： A plasma processing apparatus includes a processing chamber, a first radio frequency power supply for outputting a first radio frequency power, the first radio frequency power supply being electrically connected to a first electrode arranged in the processing chamber, a heater power supply for supplying electric power to a heating element provided in the first electrode, first and second power supply lines for electrically interconnecting the heating element and the heater power supply, and a filter circuit provided in the first and second power supply lines for attenuating radio frequency noises coming from the heating element. The filter circuit includes a first and a second air-core coil respectively provided on the first and the second power supply line at an initial stage of the filter circuit when viewed from the heating element, the air-core coils being in a coaxial relationship with each other and having substantially the same winding length.
摘要翻译：等离子体处理装置包括处理室，用于输出第一射频功率的第一射频电源，与配置在处理室中的第一电极电连接的第一射频电源，供给电力的加热器电源提供给设置在第一电极中的加热元件，用于将加热元件和加热器电源电连接的第一和第二电源线，以及设置在第一和第二电源线中的用于衰减来自加热器的射频噪声的滤波器电路元件。滤波器电路包括在从加热元件观察时在滤波电路的初始阶段分别设置在第一和第二电源线上的第一和第二空心线圈，空芯线圈与彼此具有基本相同的卷绕长度。

53. 发明申请

US20120223060A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20120223060A1
公开(公告)日：2012-09-06
申请号：US13410487
申请日：2012-03-02
申请人： Yohei Yamazawa
发明人： Yohei Yamazawa
IPC分类号： B23K10/00
CPC分类号： H05H1/46 , H05H2001/4667 , H05H2001/4682
摘要： In an inductively coupled plasma processing apparatus, an RF antenna 54 provided on a dielectric window 52 is split into an inner coil 58, an intermediate coil 60, and an outer coil 62 in a radial direction. When traveling along each of the coils from a high frequency power supply 72 to a ground potential member via a RF power supply line 68, the RF antenna 54, and an earth line 70, a direction passing through the inner coil 58 and the outer coil 62 is a counterclockwise direction, whereas a direction passing through the intermediate coil 60 is a clockwise direction. Further, a variable intermediate capacitor 86 and a variable outer capacitor 88 are electrically connected in series with the intermediate coil 60 and the outer coil 62, respectively, between the first and second nodes NA and NB.
摘要翻译：在电感耦合等离子体处理装置中，设置在电介质窗口52上的RF天线54在径向上分成内线圈58，中间线圈60和外线圈62。当通过RF电源线68，RF天线54和接地线70沿着每个线圈从高频电源72到达地电位部件行进通过内线圈58和外线圈 62是逆时针方向，而通过中间线圈60的方向是顺时针方向。此外，可变中间电容器86和可变外部电容器88分别与第一和第二节点NA和NB之间的中间线圈60和外部线圈62串联电连接。

54. 发明申请

US20120073756A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20120073756A1
公开(公告)日：2012-03-29
申请号：US13246049
申请日：2011-09-27
申请人： Yohei Yamazawa
发明人： Yohei Yamazawa
IPC分类号： C23F1/08 , C23C16/505
CPC分类号： H01J37/321 , H01J37/3211
摘要： There is provided an inductively coupled plasma etching apparatus capable of suppressing a wavelength effect within a RF antenna and performing a plasma process uniformly in both a circumferential and a radial direction. In the plasma etching apparatus, a RF antenna 54 is provided on a dielectric window 52 to generate inductively coupled plasma. The RF antenna 54 includes an inner coil 58, an intermediate coil 60 and an outer coil 62 in the radial direction. The inner coil 58 includes a single inner coil segment 59 or more than one inner coil segments 59 connected in series. The intermediate coil 60 includes two intermediate coil segments 61(1) and 61(2) separated in a circumferential direction and electrically connected with each other in parallel. The outer coil 62 includes three outer coil segments 63(1), 63(2) and 63(3) separated in a circumferential direction and electrically connected with each other in parallel.
摘要翻译：提供了一种电感耦合等离子体蚀刻装置，其能够抑制RF天线内的波长效应，并且在周向和径向均匀地执行等离子体处理。在等离子体蚀刻装置中，在电介质窗口52上设置RF天线54，以产生电感耦合等离子体。 RF天线54包括径向的内线圈58，中间线圈60和外线圈62。内部线圈58包括单个内部线圈段59或多个串联连接的内部线圈段59。中间线圈60包括沿圆周方向分离并且彼此并联电连接的两个中间线圈段61（1）和61（2）。外侧线圈62包括在圆周方向上分离并且并联电连接的三个外部线圈段63（1），63（2）和63（3）。

55. 发明授权

US07655110B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07655110B2
公开(公告)日：2010-02-02
申请号：US11691700
申请日：2007-03-27
申请人： Yohei Yamazawa
发明人： Yohei Yamazawa
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/3266 , H01J37/32082 , H01J37/32935
摘要： In the present invention, a probe which detects a time varying magnetic flux density in a direction around a center axis of a processing space is provided in a process vessel of a plasma processing apparatus. The probe detects an induced electromotive force generated in a coil as the time varying magnetic flux density, and a computer calculates an amount of radio-frequency current in the process vessel from the induced electromotive force, based on a predetermined calculation principle.
摘要翻译：在本发明中，在等离子体处理装置的处理容器中设置有检测处理空间的中心轴方向的时变磁通密度的探针。探针将线圈中产生的感应电动势检测为时变磁通密度，计算机根据预定的计算原理从感应电动势计算处理容器内的射频电流量。

56. 发明授权

US06448094B2 Method of detecting etching depth 有权
标题翻译：检测蚀刻深度的方法
公开(公告)号：US06448094B2
公开(公告)日：2002-09-10
申请号：US09769307
申请日：2001-01-26
申请人： Yohei Yamazawa , Yoshihito Ookawa
发明人： Yohei Yamazawa , Yoshihito Ookawa
IPC分类号： H01L2100
CPC分类号： H01L22/26
摘要： A method of detecting an etching depth of a target object includes the steps of irradiating an etching layer of the target object that is being etched in an etching section with light having a plurality of components differing from each other in a wavelength, detecting a plurality of interference light components differing from each other in the wavelength and having an intensity periodically changed by the light components reflected from an upper surface of the etching layer and a surface of the etching section, applying a frequency analysis to these interference light components so as to obtain the frequency of each of these interference wave forms in which the intensity forms the amplitude, calculating an etching rate corresponding to each interference wave form by using the frequency of the interference wave form, and obtaining an etching depth from the etching rate.
摘要翻译：一种检测目标物体的蚀刻深度的方法包括以下步骤：在具有波长的多个成分彼此不同的光的光的照射部分中照射被蚀刻的目标物体的蚀刻层，检测多个干涉光分量在波长上彼此不同，并且具有由从蚀刻层的上表面和蚀刻部分的表面反射的光分量周期性地改变的强度，对这些干涉光分量施加频率分析，以获得通过使用干涉波形的频率计算与每个干涉波形成对应的蚀刻速率，并且从蚀刻速率获得蚀刻深度，这些干涉波形成中的每一个的频率成为强度形成振幅。

57. 发明授权

US09218943B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US09218943B2
公开(公告)日：2015-12-22
申请号：US13246139
申请日：2011-09-27
申请人： Yohei Yamazawa
发明人： Yohei Yamazawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/321 , H01J37/3211 , H01J37/32174
摘要： There is provided an inductively coupled plasma processing apparatus capable of reducing a RF power loss within a high frequency power supply unit (particularly, a matching unit) and capable of enhancing a plasma generation efficiency. In this inductively coupled plasma processing apparatus, a multiple number of closed-loop secondary circuits 96, 98 independent from each other are formed between a coaxial antenna group 54 and a transformer 68. Further, by varying electrostatic capacitances of variable capacitors 64 and 66, secondary currents I2A and I2B flowing through an inner antenna 58 and an outer antenna 60, respectively, of the coaxial antenna group 54 are independently controlled. Accordingly, it is possible to readily control a plasma density distribution on a semiconductor wafer W in a diametrical direction.
摘要翻译：提供了一种电感耦合等离子体处理装置，其能够降低高频电源单元（特别是匹配单元）内的RF功率损耗，并且能够提高等离子体产生效率。在该电感耦合等离子体处理装置中，在同轴天线组54和变压器68之间形成多个彼此独立的闭环次级电路96,98。此外，通过改变可变电容器64和66的静电电容，独立地控制分别流过同轴天线组54的内部天线58和外部天线60的二次电流I2A和I2B。因此，可以容易地控制半导体晶片W沿直径方向的等离子体密度分布。

58. 发明申请

US20120247679A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20120247679A1
公开(公告)日：2012-10-04
申请号：US13434922
申请日：2012-03-30
申请人： Yohei Yamazawa
发明人： Yohei Yamazawa
IPC分类号： B05C9/00 , H01L21/3065
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/3244 , H01J37/32715
摘要： In an inductively coupled plasma processing apparatus, it is possible to control a plasma density distribution while suppressing a wavelength effect within a RF antenna. Provided at a ceiling of a chamber 10 or above a dielectric window 52 is a circular ring-shaped RF antenna 54 for generating inductively coupled plasma within the chamber 10. This RF antenna 54 includes two coil segments 84(1) and 84(2) each having a semicircular arc shape. The coil segments 84(1) and 84(2) are electrically connected to each other in parallel with respect to a high frequency power supply unit 62. On the dielectric window 52, a circular ring-shaped floating coil 60 having a variable capacitor 58 coupled to the RF antenna 54 by an electromagnetic induction is provided. The variable capacitor 58 is varied in a certain range by a capacitance varying unit 82 under the control of a main controller 80.
摘要翻译：在电感耦合等离子体处理装置中，可以抑制RF天线内的波长效应，同时控制等离子体密度分布。在介质窗52的室10的顶部设置有用于在室10内产生电感耦合等离子体的圆形环形RF天线54.该RF天线54包括两个线圈段84（1）和84（2）每个都具有半圆弧形。线圈段84（1）和84（2）相对于高频电源单元62并联地电连接。在电介质窗口52上，具有可变电容器58的圆形环形浮动线圈提供了通过电磁感应耦合到RF天线54。可变电容器58在主控制器80的控制下由电容变化单元82在一定范围内变化。

59. 发明申请

US20110126765A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20110126765A1
公开(公告)日：2011-06-02
申请号：US12951380
申请日：2010-11-22
申请人： Yohei Yamazawa , Naoki Matsumoto , Masahide Iwasaki , Naohiko Okunishi
发明人： Yohei Yamazawa , Naoki Matsumoto , Masahide Iwasaki , Naohiko Okunishi
IPC分类号： C23C16/513
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32522 , H05H1/46
摘要： A parallel resonance frequency can be adjusted in order to stably and securely block different high frequency noises flowing into a line such as a power feed line or a signal line from electric members including a high frequency electrode within a processing chamber. A filter 102(1) coaxially accommodates a coil 104(1) within a cylindrical outer conductor 110, and a ring member 122 is coaxially installed between the coil 104(1) and the outer conductor 110. The ring-shaped member 122 may be a plate body of a circular ring shape on a plane orthogonal to an axial direction of the outer conductor 110 and made of a conductor such as cupper or aluminum and electrically connected with the outer conductor 110 while electrically insulated from the coil 104(1).
摘要翻译：可以调节并联谐振频率，以便稳定且可靠地阻止流入来自包括处理室内的高频电极的电气部件的馈电线或信号线的线路的不同高频噪声。过滤器102（1）在圆柱形外导体110内同轴地容纳线圈104（1），并且环形构件122同轴地安装在线圈104（1）和外导体110之间。环形构件122可以是在与外导体110的轴向正交的平面上并且由诸如铜或铝的导体制成并且与外导体110电连接并且与线圈104（1）电绝缘的平板体。

60. 发明申请

US20100252198A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20100252198A1
公开(公告)日：2010-10-07
申请号：US12816440
申请日：2010-06-16
申请人： Yohei Yamazawa , Noriaki Imai
发明人： Yohei Yamazawa , Noriaki Imai
IPC分类号： H01L21/465
CPC分类号： H01J37/32321 , H01J37/32091 , H01J37/32183 , H01L21/3065
摘要： In a plasma processing apparatus in which a radio-frequency power from a radio-frequency power source is supplied to an electrode disposed in a process vessel, to thereby generate, in the process vessel, plasma with which a substrate is processed, a chemical component emitting member which is caused to emit a chemical component necessary for processing the substrate into the process vessel by entrance of ions in the plasma generated in the process vessel is provided in the process vessel in an exposed state, and an impedance varying circuit varying impedance on the chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source is connected to the chemical component emitting member.
摘要翻译：在等离子体处理装置中，将来自射频电源的射频功率供给到设置在处理容器中的电极，从而在处理容器中产生加工有基板的等离子体，化学成分通过在处理容器中产生的等离子体中的离子的入射将基板发射到处理容器中所需的化学成分被发射到处理容器中，并且阻抗变化电路在将处理容器中产生的等离子体的化学成分发射部分侧与射频电源的频率连接到化学成分发射部件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式