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51. 发明授权

US07230845B1 Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices 有权
标题翻译：具有硬偏磁场的磁性装置和使用磁性装置的磁存储装置
公开(公告)号：US07230845B1
公开(公告)日：2007-06-12
申请号：US11192811
申请日：2005-07-29
申请人： Lien-Chang Wang , Yiming Huai
发明人： Lien-Chang Wang , Yiming Huai
IPC分类号： G11C11/15
CPC分类号： G11C11/15
摘要： A method and system for providing a magnetic memory device are disclosed. The method and system include providing a magnetic element that includes a data storage layer having at least one easy axis in at least a first direction. The method and system also include providing a hard bias structure surrounding a portion of the magnetic element. The hard bias structure is also configured to provide at least one hard bias field essentially parallel to the at least the first direction or essentially perpendicular to the at least the first direction.
摘要翻译：公开了一种用于提供磁存储器件的方法和系统。该方法和系统包括提供包括在至少第一方向上具有至少一个易轴的数据存储层的磁性元件。该方法和系统还包括提供围绕磁性元件的一部分的硬偏置结构。硬偏置结构还被配置为提供基本上平行于至少第一方向或基本上垂直于至少第一方向的至少一个硬偏置场。

52. 发明申请

US20070074317A1 Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements 有权
标题翻译：使用磁性元件使用铁磁体和磁存储器的自旋转换开关磁性元件
公开(公告)号：US20070074317A1
公开(公告)日：2007-03-29
申请号：US11210452
申请日：2005-08-23
申请人： Mahendra Pakala , Eugene Chen , Yiming Huai
发明人： Mahendra Pakala , Eugene Chen , Yiming Huai
IPC分类号： H01L29/74
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L43/10
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The free layer is ferrimagnetic and includes at least one of a conductive ferrite, a garnet, a ferrimagnetic alloy excluding a rare earth, a heavy rare-earth-transition metal alloy, a half-metallic ferrimagnetic, and a bilayer. The bilayer includes a rare earth-transition metal alloy layer and a spin current enhancement layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括提供钉扎层，提供间隔层，并提供自由层。自由层是亚铁磁性的，并且包括导电铁氧体，石榴石，除稀土之外的亚铁磁合金，重稀土 - 过渡金属合金，半金属亚铁磁性和双层中的至少一种。双层包括稀土 - 过渡金属合金层和自旋电流增强层。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

53. 发明授权

US07110287B2 Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer 有权
标题翻译：利用自旋转移提供磁性元件的热辅助切换的方法和系统
公开(公告)号：US07110287B2
公开(公告)日：2006-09-19
申请号：US10778735
申请日：2004-02-13
申请人： Yiming Huai , Mahendra Pakala
发明人： Yiming Huai , Mahendra Pakala
IPC分类号： G11C11/14 , G11C11/15
CPC分类号： H01L43/08 , G11C11/16 , G11C11/1675
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, spacer, free, and heat assisted switching layers. The spacer layer resides between the pinned and free layers. The free layer resides between the spacer and heat assisted switching layers. The heat assisted switching layer improves thermal stability of the free layer when the free layer is not being switched, preferably via an exchange coupling. The free layer is switched using spin transfer when a write current is passed through the magnetic element. The write current preferably provides heat that reduces the heat assisted switching layer's stabilization of the free layer. In another aspect, the magnetic element also includes second free, a second spacer, and second pinned layers. The heat assisted switching layer resides between the two free layers, which are magnetostatically coupled.
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括钉扎，间隔件，自由和热辅助开关层。间隔层位于固定层和自由层之间。自由层位于间隔件和热辅助切换层之间。当自由层未被切换时，优选通过交换耦合，热辅助切换层改善了自由层的热稳定性。当写入电流通过磁性元件时，使用自旋转移来切换自由层。写入电流优选地提供热量，其减少热辅助切换层的自由层的稳定性。在另一方面，磁性元件还包括第二自由，第二间隔物和第二钉扎层。热辅助切换层位于两个自由层之间，这两个自由层是静磁耦合的。

54. 发明申请

US20060192237A1 Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements 有权
标题翻译：使用自旋转移的具有弹道磁阻的磁性元件和使用这种磁性元件的MRAM器件
公开(公告)号：US20060192237A1
公开(公告)日：2006-08-31
申请号：US11413744
申请日：2006-04-28
申请人： Yiming Huai
发明人： Yiming Huai
IPC分类号： H01L29/94 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01F41/305 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/12
摘要： A method and system for providing a magnetic element is disclosed. The method and system include providing a pinned layer, a magnetic current confined layer, and a free layer. The pinned layer is ferromagnetic and has a first pinned layer magnetization. The magnetic current confined layer has at least one channel in an insulating matrix and resides between the pinned layer and the free layer. The channel(s) are ferromagnetic, conductive, and extend through the insulating matrix between the free layer and the pinned layer. The size(s) of the channel(s) are sufficiently small that charge carriers can give rise to ballistic magnetoresistance in the magnetic current confined layer. The free layer is ferromagnetic and has a free layer magnetization. Preferably, the method and system also include providing a second pinned layer and a nonmagnetic spacer layer between the second pinned layer and the free layer. In this aspect, the magnetic element is configured to allow the free layer magnetization to be switched using spin transfer.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括提供钉扎层，磁电流限制层和自由层。钉扎层是铁磁性的并且具有第一钉扎层磁化。磁电流限制层在绝缘基体中具有至少一个通道，并且位于被钉扎层和自由层之间。通道是铁磁性的，导电的，并且延伸穿过自由层和被钉扎层之间的绝缘基体。通道的尺寸足够小，使得载流子可以在磁电流限制层中产生弹道磁阻。自由层是铁磁性的并且具有自由层磁化。优选地，该方法和系统还包括在第二被钉扎层和自由层之间提供第二钉扎层和非磁性间隔层。在这方面，磁性元件被配置为允许使用自旋转移来切换自由层的磁化。

55. 发明授权

US06992359B2 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization 有权
公开(公告)号：US06992359B2
公开(公告)日：2006-01-31
申请号：US10789334
申请日：2004-02-26
申请人： Paul P. Nguyen , Yiming Huai
发明人： Paul P. Nguyen , Yiming Huai
IPC分类号： H01L43/00
CPC分类号： H01F41/302 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , G11C11/1675 , H01F10/30 , H01F10/3236 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/26 , Y10T428/261 , Y10T428/265
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-of-plane demagnetization energy.

56. 发明授权

US06989972B1 Magnetoresistive sensor with overlapping leads having distributed current 有权
标题翻译：具有重叠引线的磁阻传感器具有分布电流
公开(公告)号：US06989972B1
公开(公告)日：2006-01-24
申请号：US10261119
申请日：2002-09-30
申请人： Kroum Stoev , Mathew Gibbons , Francis Liu , Bogdan M. Simion , Aparna C. Vadde , Jing Zhang , Yiming Huai , Marcos M. Lederman
发明人： Kroum Stoev , Mathew Gibbons , Francis Liu , Bogdan M. Simion , Aparna C. Vadde , Jing Zhang , Yiming Huai , Marcos M. Lederman
IPC分类号： G11B5/39
CPC分类号： G11B5/3932
摘要： Magnetoresistive (MR) sensors have leads that overlap a MR structure and distribute current to the MR structure so that the current is not concentrated in small portions of the leads. An electrically resistive capping layer can be formed between the leads and the MR structure to distribute the current. The leads can include resistive layers and conductive layers, the resistive layers having a thickness-to-resistivity ratio that is greater than that of each of the conductive layers. The resistive layers may protect the conductive layers during MR structure etching, so that the leads have broad layers of electrically conductive material for connection to MR structures. The broad leads conduct heat better than the read gap material that they replace, further reducing the temperature at the connection between the leads and the MR structure.
摘要翻译：磁阻（MR）传感器具有与MR结构重叠并且将电流分配到MR结构的引线，使得电流不集中在引线的小部分中。可以在引线和MR结构之间形成电阻覆盖层以分布电流。引线可以包括电阻层和导电层，电阻层的厚度 - 电阻率比大于每个导电层的厚度 - 电阻率比。电阻层可以在MR结构蚀刻期间保护导电层，使得引线具有用于连接到MR结构的宽的导电材料层。宽引线比它们所替代的读取间隙材料更好地传导热量，进一步降低引线与MR结构之间的连接处的温度。

57. 发明申请

US20050201023A1 Magnetic element utilizing spin transfer and an MRAM device using the magnetic element 有权
标题翻译：利用自旋转移的磁性元件和使用该磁性元件的MRAM器件
公开(公告)号：US20050201023A1
公开(公告)日：2005-09-15
申请号：US11114946
申请日：2005-04-25
申请人： Yiming Huai , Paul Nguyen
发明人： Yiming Huai , Paul Nguyen
IPC分类号： G11C11/15 , G11C11/16 , H01F10/32 , H01F41/30 , H01L21/8246 , H01L27/105 , H01L43/08 , G11B5/33
CPC分类号： H01F10/3263 , B82Y25/00 , B82Y40/00 , H01F41/302
摘要： A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction, due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供能够使用自旋传递效应写入的磁性元件同时产生高输出信号的磁性元件和使用该磁性元件的磁性存储器的方法和系统。磁性元件包括第一铁磁性钉扎层，非磁性间隔层，铁磁性自由层，绝缘阻挡层和第二铁磁性钉扎层。钉扎层具有沿第一方向固定的磁化。非磁性间隔层是导电的并且在第一被钉扎层和自由层之间。阻挡层位于自由层和第二被钉扎层之间，并且是具有允许电子隧穿穿过阻挡层的厚度的绝缘体。第二被钉扎层具有沿第二方向固定的磁化。磁性元件构造成允许自由层的磁化改变方向，这是由于当写入电流通过磁性元件时的自旋转移。

58. 发明申请

US20050184839A1 Spin transfer magnetic element having low saturation magnetization free layers 有权
标题翻译：具有低饱和磁化自由层的自旋转移磁性元件
公开(公告)号：US20050184839A1
公开(公告)日：2005-08-25
申请号：US10783416
申请日：2004-02-19
申请人： Paul Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
发明人： Paul Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
IPC分类号： G11C11/15 , G11C11/16 , H01F10/16 , H01F10/32 , H01F41/30 , H01H9/00 , H01L43/10
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/16 , H01F10/3263 , H01F10/3272 , H01F41/303
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二被钉扎层。或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

59. 发明授权

US06934129B1 Magnetoresistive sensor with overlapping lead layers including alpha tantalum and conductive layers 失效
标题翻译：具有重叠引线层的磁阻传感器，包括α钽和导电层
公开(公告)号：US06934129B1
公开(公告)日：2005-08-23
申请号：US10260896
申请日：2002-09-30
申请人： Jinqiu Zhang , Jing Zhang , Yiming Huai , Lifan Chen
发明人： Jinqiu Zhang , Jing Zhang , Yiming Huai , Lifan Chen
IPC分类号： G11B5/39
CPC分类号： G11B5/3932
摘要： Magnetoresistive (MR) sensors are disclosed that have leads that overlap a MR structure and distribute current to and from the MR structure so that the current is not concentrated in small portions of the leads, alleviating the problems mentioned above. For example, the leads can be formed of a body-centered cubic (bcc) form of tantalum, combined with gold or other highly conductive materials. For the situation in which a thicker bcc tantalum layer covers a highly conductive gold layer, the tantalum layer protects the gold layer during MR structure etching, so that the leads can have broad layers of electrically conductive material for connection to MR structures. The broad leads also conduct heat better than the read gap material that they replace, further reducing the temperature at the connection between the leads and the MR structure.
摘要翻译：公开了磁阻（MR）传感器，其具有与MR结构重叠的引线并且将电流分配到MR结构和从MR结构分配电流，使得电流不集中在引线的小部分中，减轻了上述问题。例如，引线可以由体心立方（bcc）形式的钽形成，与金或其它高导电材料组合。对于较厚的bcc钽层覆盖高导电金层的情况，钽层在MR结构蚀刻期间保护金层，使得引线可以具有用于连接到MR结构的宽层导电材料。宽引线还比它们所替代的读取间隙材料更好地传导热量，进一步降低引线与MR结构之间的连接处的温度。

60. 发明授权

US06920063B2 Magnetic element utilizing spin transfer and an MRAM device using the magnetic element 有权
标题翻译：利用自旋转移的磁性元件和使用该磁性元件的MRAM器件
公开(公告)号：US06920063B2
公开(公告)日：2005-07-19
申请号：US10741188
申请日：2003-12-18
申请人： Yiming Huai , Paul P. Nguyen
发明人： Yiming Huai , Paul P. Nguyen
IPC分类号： G11C11/15 , G11C11/16 , H01F10/32 , H01F41/30 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/14
CPC分类号： H01F10/3263 , B82Y25/00 , B82Y40/00 , H01F41/302
摘要： A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供能够使用自旋传递效应写入的磁性元件同时产生高输出信号的磁性元件和使用该磁性元件的磁性存储器的方法和系统。磁性元件包括第一铁磁性钉扎层，非磁性间隔层，铁磁性自由层，绝缘阻挡层和第二铁磁性钉扎层。钉扎层具有沿第一方向固定的磁化。非磁性间隔层是导电的并且在第一被钉扎层和自由层之间。阻挡层位于自由层和第二被钉扎层之间，并且是具有允许电子隧穿穿过阻挡层的厚度的绝缘体。第二被钉扎层具有沿第二方向固定的磁化。磁性元件配置成当写入电流通过磁性元件时，由于自旋转移使自由层的磁化改变方向。

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